公开(公告)号：US09601693B1

公开(公告)日：2017-03-21

申请号：US14935317

申请日：2015-11-06

Applicant: Lam Research Corporation

Inventor： Jon Henri ,  Dennis M. Hausmann ,  Seshasayee Varadarajan ,  Bhadri N. Varadarajan

IPC: H01L21/8234 ,  H01L21/8244 ,  H01L45/00

CPC classification number: H01L45/16 ,  H01L45/06 ,  H01L45/065 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1293 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144

Abstract: Methods of depositing silicon nitride encapsulation layers by atomic layer deposition over memory devices including chalcogenide material are provided herein. Methods include using iodine-containing silicon precursors and depositing thermally using ammonia or hydrazine as a second reactant, or iodine-containing silicon precursors and depositing using a nitrogen-based or hydrogen-based plasma.

公开(公告)号：US09385318B1

公开(公告)日：2016-07-05

申请号：US14811205

申请日：2015-07-28

Applicant: Lam Research Corporation

Inventor： Jon Henri

IPC: H01L21/31 ,  H01L45/00

CPC classification number: H01L45/1616 ,  C23C16/26 ,  C23C16/345 ,  H01L45/06 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/141 ,  H01L45/144 ,  H01L45/1675

Abstract: Various embodiments herein relate to methods and apparatus for depositing a bilayer barrier layer on a substrate. The bilayer barrier layer may include a first sub-layer designed to protect underlying halide-sensitive layers from damaging halide-containing chemistry, as well as a second sub-layer designed to protect underlying materials from damage due to oxidation. In a number of embodiments the first sub-layer is layer having a high carbon content, and the second layer is silicon nitride. The silicon nitride second sub-layer may be deposited with halide-containing chemistry that would otherwise damage halide-sensitive materials, if not for the presence of the first sub-layer. The resulting bilayer barrier layer provides high quality protection for underlying materials.

Abstract translation: 本文中的各种实施例涉及用于在衬底上沉积双层阻挡层的方法和装置。 双层阻挡层可以包括设计成保护下面的卤化物敏感层免受含卤化物化学物质损害的第一子层，以及设计成保护下层材料免受氧化损伤的第二子层。 在多个实施例中，第一子层是具有高碳含量的层，第二层是氮化硅。 氮化硅第二子层可以沉积含卤化物的化学物质，否则会损害卤化物敏感材料，如果不是第一子层的存在。 所得的双层阻挡层为下层材料提供高质量的保护。

公开(公告)号：US20210358753A1

公开(公告)日：2021-11-18

申请号：US17389301

申请日：2021-07-29

Applicant: Lam Research Corporation

Inventor： Nagraj Shankar ,  Kapu Sirish Reddy ,  Jon Henri ,  Pengyi Zhang ,  Elham Mohimi ,  Bhavin Jariwala ,  Arpan Pravin Mahorowala

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/02 ,  C23C16/455 ,  C23C16/40 ,  H01L21/027 ,  H01L21/306 ,  H01L21/308 ,  H01L21/3105

Abstract: Methods, systems, and computer programs are presented for selective deposition of etch-stop layers for enhanced patterning during semiconductor manufacturing. One method includes an operation for adding a photo-resist material (M2) on top of a base material (M1) of a substrate, M2 defining a pattern for etching M1 in areas where M2 is not present above M1. The method further includes operations for conformally capping the substrate with an oxide material (M3) after adding M2, and for gap tilling the substrate with filling material M4 after the conformally capping. Further, a stop-etch material (M5) is selectively grown on exposed surfaces of M3 and not on surfaces of M4 after the gap filling. Additionally, the method includes operations for removing M4 from the substrate after selectively growing M5, and for etching the substrate after removing M4 to transfer the pattern into M1. M5 adds etching protection to enable deeper etching into M1.

公开(公告)号：US11107683B2

公开(公告)日：2021-08-31

申请号：US16835112

申请日：2020-03-30

Applicant: Lam Research Corporation

Inventor： David Charles Smith ,  Jon Henri ,  Dennis M. Hausmann ,  Paul C. Lemaire

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/3105 ,  C23C16/04 ,  C23C16/24 ,  C23C16/32 ,  C23C16/36 ,  C23C16/52 ,  H01J37/32

Abstract: Methods and apparatuses for selectively growing metal-containing hard masks are provided herein. Methods include providing a substrate having a pattern of spaced apart features, each feature having a top horizontal surface, filling spaces between the spaced apart features with carbon-containing material to form a planar surface having the top horizontal surfaces of the features and carbon-containing material, selectively depositing a metal-containing hard mask on the top horizontal surfaces of the features relative to the carbon-containing material, and selectively removing the carbon-containing material relative to the metal-containing hard mask and features.

公开(公告)号：US11075127B2

公开(公告)日：2021-07-27

申请号：US16503270

申请日：2019-07-03

Applicant: Lam Research Corporation

Inventor： Seshasayee Varadarajan ,  Aaron R. Fellis ,  Andrew John McKerrow ,  James Samuel Sims ,  Ramesh Chandrasekharan ,  Jon Henri

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/677 ,  H01L21/02 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/505 ,  C23C16/54 ,  C23C16/50 ,  C23C16/52

Abstract: Disclosed are methods of and apparatuses and systems for depositing a film in a multi-station deposition apparatus. The methods may include: (a) providing a substrate to a first station of the apparatus, (b) adjusting the temperature of the substrate to a first temperature, (c) depositing a first portion of the material on the substrate while the substrate is at the first temperature in the first station, (d) transferring the substrate to the second station, (e) adjusting the temperature of the substrate to a second temperature, and (f) depositing a second portion of the material on the substrate while the substrate is at the second temperature, such that the first portion and the second portion exhibit different values of a property of the material. The apparatuses and systems may include a multi-station deposition apparatus and a controller having control logic for performing one or more of (a)-(f).

公开(公告)号：US10804099B2

公开(公告)日：2020-10-13

申请号：US15847744

申请日：2017-12-19

Applicant: Lam Research Corporation

Inventor： Jon Henri ,  Dennis M. Hausmann ,  Bart J. van Schravendijk ,  Shane Tang ,  Karl F. Leeser

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/52 ,  C23C16/50 ,  C23C16/04

Abstract: Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing inhibitor may be performed with a plasma, and methods are suitable for selective inhibition in thermal or plasma enhanced atomic layer deposition of silicon-containing films.

公开(公告)号：US20180047645A1

公开(公告)日：2018-02-15

申请号：US15232708

申请日：2016-08-09

Applicant: Lam Research Corporation

Inventor： Seshasayee Varadarajan ,  Aaron R. Fellis ,  Andrew John McKerrow ,  James Samuel Sims ,  Ramesh Chandrasekharan ,  Jon Henri

IPC: H01L21/66 ,  H01L21/02 ,  C23C16/52 ,  C23C16/50 ,  C23C16/455

CPC classification number: H01L22/20 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  C23C16/54 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/67207 ,  H01L21/67248 ,  H01L21/67745

Abstract: Disclosed are methods of and apparatuses and systems for depositing a film in a multi-station deposition apparatus. The methods may include: (a) providing a substrate to a first station of the apparatus, (b) adjusting the temperature of the substrate to a first temperature, (c) depositing a first portion of the material on the substrate while the substrate is at the first temperature in the first station, (d) transferring the substrate to the second station, (e) adjusting the temperature of the substrate to a second temperature, and (f) depositing a second portion of the material on the substrate while the substrate is at the second temperature, such that the first portion and the second portion exhibit different values of a property of the material. The apparatuses and systems may include a multi-station deposition apparatus and a controller having control logic for performing one or more of (a)-(f).

公开(公告)号：US09875891B2

公开(公告)日：2018-01-23

申请号：US15399637

申请日：2017-01-05

Applicant: Lam Research Corporation

Inventor： Jon Henri ,  Dennis M. Hausmann ,  Bart J. van Schravendijk ,  Shane Tang ,  Karl F. Leeser

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/50 ,  C23C16/52

CPC classification number: H01L21/0228 ,  C23C16/04 ,  C23C16/045 ,  C23C16/45534 ,  C23C16/45542 ,  C23C16/45544 ,  C23C16/50 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02312 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02595 ,  H01L21/0262

Abstract: Methods of selectively inhibiting deposition of silicon-containing films deposited by atomic layer deposition are provided. Selective inhibition involves exposure of an adsorbed layer of a silicon-containing precursor to a hydrogen-containing inhibitor, and in some instances, prior to exposure of the adsorbed layer to a second reactant. Exposure to a hydrogen-containing inhibitor may be performed with a plasma, and methods are suitable for selective inhibition in thermal or plasma enhanced atomic layer deposition of silicon-containing films.

公开(公告)号：US20170092856A1

公开(公告)日：2017-03-30

申请号：US14935317

申请日：2015-11-06

Applicant: LAM RESEARCH CORPORATION

Inventor： Jon Henri ,  Dennis M. Hausmann ,  Seshasayee Varadarajan ,  Bhadri N. Varadarajan

IPC: H01L45/00

CPC classification number: H01L45/16 ,  H01L45/06 ,  H01L45/065 ,  H01L45/12 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/1293 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144

Abstract: Methods of depositing silicon nitride encapsulation layers by atomic layer deposition over memory devices including chalcogenide material are provided herein. Methods include using iodine-containing silicon precursors and depositing thermally using ammonia or hydrazine as a second reactant, or iodine-containing silicon precursors and depositing using a nitrogen-based or hydrogen-based plasma.

公开(公告)号：US09502238B2

公开(公告)日：2016-11-22

申请号：US14678736

申请日：2015-04-03

Applicant: Lam Research Corporation

Inventor： Michal Danek ,  Jon Henri ,  Shane Tang

IPC: H01L21/311 ,  H01L21/02 ,  C23C16/455 ,  C23C16/505 ,  H01J37/32 ,  C23C16/52 ,  H01L21/67

CPC classification number: H01L21/0228 ,  C23C16/45527 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32082 ,  H01J37/32091 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/0234 ,  H01L21/67069 ,  H01L21/67201 ,  H01L21/67207

Abstract: Methods for depositing conformal films using a halogen-containing etchant during atomic layer deposition are provided. Methods involve exposing a substrate to a halogen-containing etchant such as nitrogen trifluoride between exposing the substrate to a first precursor and exposing the substrate to a second plasma-activated reactant. Examples of conformal films that may be deposited include silicon-containing films and metal-containing films. Related apparatuses are also provided.

Abstract translation: 提供了在原子层沉积期间使用含卤素蚀刻剂沉积保形膜的方法。 方法包括在将衬底暴露于第一前体之前将衬底暴露于含卤素蚀刻剂如三氟化氮，并将衬底暴露于第二等离子体活化反应物。 可以沉积的保形膜的实例包括含硅膜和含金属膜。 还提供了相关装置。