中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

39 records (took 0.027 seconds)

    Plasma processing devices having multi-port valve assemblies
    21.
    发明授权
    Plasma processing devices having multi-port valve assemblies 有权

    公开(公告)号：US12100575B2

    公开(公告)日：2024-09-24

    申请号：US16030489

    申请日：2018-07-09

    Applicant: Lam Research Corporation

    Inventor： Daniel A. Brown ,  Michael C. Kellogg ,  Leonard J. Sharpless ,  Allan K. Ronne ,  James E. Tappan

    IPC: H01J37/32

    CPC classification number: H01J37/32449 ,  H01J37/32513 ,  H01J37/32816 ,  H01J37/32834

    Abstract: A plasma processing device may include a plasma processing chamber, a plasma electrode assembly, a wafer stage, a plasma producing gas inlet, a plurality of vacuum ports, at least one vacuum pump, and a multi-port valve assembly. The multi-port valve assembly may comprise a movable seal plate positioned in the plasma processing chamber. The movable seal plate may comprise a transverse port sealing surface that is shaped and sized to completely overlap the plurality of vacuum ports in a closed state, to partially overlap the plurality of vacuum ports in a partially open state, and to avoid substantial overlap of the plurality of vacuum ports in an open state. The multi-port valve assembly may comprise a transverse actuator coupled to the movable seal plate and a sealing actuator coupled to the movable seal plate.

    RING STRUCTURES AND SYSTEMS FOR USE IN A PLASMA CHAMBER
    22.
    发明公开
    RING STRUCTURES AND SYSTEMS FOR USE IN A PLASMA CHAMBER 审中-公开

    公开(公告)号：US20240162015A1

    公开(公告)日：2024-05-16

    申请号：US18405997

    申请日：2024-01-05

    Applicant: Lam Research Corporation

    Inventor： Michael C. Kellogg ,  Adam Mace ,  Alexei Marakhtanov ,  John Holland ,  Zhigang Chen ,  Felix Kozakevich ,  Alexander Matyushkin

    IPC: H01J37/32

    CPC classification number: H01J37/32642

    Abstract: Systems and methods for securing an edge ring to a support ring are described. The edge ring is secured to the support ring via multiple fasteners that are inserted into a bottom surface of the edge ring. The securing of the edge ring to the support ring provides stability of the edge ring during processing of a substrate within a plasma chamber. In addition, the securing of the edge ring to the support ring secures the edge ring to the plasma chamber because the support ring is secured to an insulator ring, which is connected to an insulator wall of the plasma chamber. Moreover, the support ring and the edge ring are pulled down vertically using one or more clasp mechanisms during the processing of the substrate and are pushed up vertically using the clasp mechanisms to remove the edge ring and the support ring from the plasma chamber.

    Monolithic gas distribution manifold and various construction techniques and use cases therefor
    23.
    发明授权
    Monolithic gas distribution manifold and various construction techniques and use cases therefor 有权

    公开(公告)号：US10914003B2

    公开(公告)日：2021-02-09

    申请号：US16725173

    申请日：2019-12-23

    Applicant: Lam Research Corporation

    Inventor： Andrew C. Lee ,  Michael C. Kellogg ,  Christopher J. Pena ,  John Edward Daugherty

    IPC: C23C16/455 ,  C23C16/04 ,  C23C16/44 ,  B24B37/04

    Abstract: A gas delivery substrate for mounting gas supply components of a gas delivery system for a semiconductor processing apparatus is provided. The substrate may include a plurality of layers having major surfaces thereof bonded together forming a laminate with openings for receiving and mounting first, second, third and fourth gas supply components on an outer major surface. The substrate may include a first gas channel extending across an interior major surface that at least partially overlaps a second gas channel extending across a different interior major surface. The substrate may include a first gas conduit including the first gas channel connecting the first gas supply component to the second gas supply component, and a second gas conduit including the second channel connecting the third gas supply component to the fourth gas supply component. Also disclosed are various techniques for manufacturing gas delivery substrates.

    Silicon containing confinement ring for plasma processing apparatus and method of forming thereof
    27.
    发明授权
    Silicon containing confinement ring for plasma processing apparatus and method of forming thereof 有权
    用于等离子体处理装置的含硅限制环及其形成方法

    公开(公告)号：US09123661B2

    公开(公告)日：2015-09-01

    申请号：US13961277

    申请日：2013-08-07

    Applicant: Lam Research Corporation

    Inventor： Michael C. Kellogg

    IPC: H01L21/311 ,  H01J9/00 ,  B29C33/38 ,  H01L21/3205 ,  B29K83/00

    CPC classification number: H01L21/02274 ,  B29C33/38 ,  B29C33/3842 ,  B29K2083/00 ,  C23C16/01 ,  C23C16/24 ,  C23C16/50 ,  H01J9/00 ,  H01J37/32623 ,  H01J37/32642 ,  H01L21/28556 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/3205 ,  H01L21/67069

    Abstract: A method of forming a silicon containing confinement ring for a plasma processing apparatus useful for processing a semiconductor substrate comprises inserting silicon containing vanes into grooves formed in a grooved surface of an annular carbon template wherein the grooved surface of the annular carbon template includes an upwardly projecting step at an inner perimeter thereof wherein each groove extends from the inner perimeter to an outer perimeter of the grooved surface. The step of the grooved surface and a projection at an end of each silicon containing vane is surrounded with an annular carbon member wherein the annular carbon member covers an upper surface of each silicon containing vane in each respective groove. Silicon containing material is deposited on the annular carbon template, the annular carbon member, and exposed portions of each silicon containing vane thereby forming a silicon containing shell of a predetermined thickness. A portion of the silicon containing shell is removed and the annular carbon template and the annular carbon member are removed from the silicon containing shell leaving a silicon containing confinement ring wherein the silicon containing vanes are supported by the silicon containing shell of the silicon containing confinement ring.

    Abstract translation: 形成用于处理半导体衬底的等离子体处理装置的含硅限制环的方法包括将含硅叶片插入形成在环形碳模板的带槽表面中的槽中，其中环形碳模板的带槽表面包括向上突出的 在其内周边处，其中每个凹槽从凹槽表面的内周边延伸到外周边。 槽形表面的台阶和每个含硅叶片的端部处的突起被环形碳构件包围，其中环形碳构件覆盖每个相应槽中的每个含硅叶片的上表面。 含硅材料沉积在环形碳模板，环形碳构件和每个含硅叶片的暴露部分上，从而形成预定厚度的含硅壳。 除去含硅壳的一部分，并且从含硅壳中除去环状碳模板和环形碳构件，留下含硅的限制环，其中含硅的叶片由含硅限制环的含硅壳支撑 。

    Pressure controlled heat pipe temperature control plate
    28.
    发明授权
    Pressure controlled heat pipe temperature control plate 有权
    压力控制热管温控板

    公开(公告)号：US08975817B2

    公开(公告)日：2015-03-10

    申请号：US13653923

    申请日：2012-10-17

    Applicant: Lam Research Corporation

    Inventor： Michael C. Kellogg ,  Rajinder Dhindsa ,  Tom Stevenson

    IPC: H01J7/24 ,  H01J37/32

    CPC classification number: H01J37/32449

    Abstract: A showerhead electrode assembly for a plasma processing chamber, which includes a showerhead electrode; a heater plate secured to the showerhead electrode; at least one pressure controlled heat pipe secured to an upper surface of the heater plate, the at least one pressure controlled heat pipe having a heat transfer liquid contained therein, and a pressurized gas, which produces a variable internal pressure within the at least one pressure controlled heat pipe; a top plate secured to an upper surface of the at least one heat pipe; and wherein the variable internal pressure within the at least one pressure controlled heat pipe during heating of the showerhead electrode by the heater plate displaces the heat transfer liquid from a thermal path between the top plate and the heater plate, and when removing excess heat from the showerhead electrode returns the heat transfer liquid to the thermal path.

    Abstract translation: 一种用于等离子体处理室的喷头电极组件，其包括喷头电极; 固定在喷头电极上的加热板; 至少一个受压控制的热管固定到加热器板的上表面，所述至少一个压力控制的热管具有其中包含的传热液体，以及加压气体，其在所述至少一个压力内产生可变的内部压力 受控热管; 固定到所述至少一个热管的上表面的顶板; 并且其中，通过所述加热板加热所述喷头电极期间所述至少一个压力控制热管内的可变内部压力将所述传热液体从所述顶板和所述加热板之间的热路径移位，并且当从所述加热板 喷头电极将热传递液体返回到热路径。

    SILICON CONTAINING CONFINEMENT RING FOR PLASMA PROCESSING APPARATUS AND METHOD OF FORMING THEREOF
    29.
    发明申请
    SILICON CONTAINING CONFINEMENT RING FOR PLASMA PROCESSING APPARATUS AND METHOD OF FORMING THEREOF 有权
    用于等离子体处理装置的含硅化合物环及其形成方法

    公开(公告)号：US20150044873A1

    公开(公告)日：2015-02-12

    申请号：US13961277

    申请日：2013-08-07

    Applicant: Lam Research Corporation

    Inventor： Michael C. Kellogg

    IPC: H01L21/311 ,  H01J9/00 ,  H01L21/3205 ,  B29C33/38

    CPC classification number: H01L21/02274 ,  B29C33/38 ,  B29C33/3842 ,  B29K2083/00 ,  C23C16/01 ,  C23C16/24 ,  C23C16/50 ,  H01J9/00 ,  H01J37/32623 ,  H01J37/32642 ,  H01L21/28556 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/3205 ,  H01L21/67069

    Abstract: A method of forming a silicon containing confinement ring for a plasma processing apparatus useful for processing a semiconductor substrate comprises inserting silicon containing vanes into grooves formed in a grooved surface of an annular carbon template wherein the grooved surface of the annular carbon template includes an upwardly projecting step at an inner perimeter thereof wherein each groove extends from the inner perimeter to an outer perimeter of the grooved surface. The step of the grooved surface and a projection at an end of each silicon containing vane is surrounded with an annular carbon member wherein the annular carbon member covers an upper surface of each silicon containing vane in each respective groove. Silicon containing material is deposited on the annular carbon template, the annular carbon member, and exposed portions of each silicon containing vane thereby forming a silicon containing shell of a predetermined thickness. A portion of the silicon containing shell is removed and the annular carbon template and the annular carbon member are removed from the silicon containing shell leaving a silicon containing confinement ring wherein the silicon containing vanes are supported by the silicon containing shell of the silicon containing confinement ring.

    Abstract translation: 形成用于处理半导体衬底的等离子体处理装置的含硅限制环的方法包括将含硅叶片插入形成在环形碳模板的带槽表面中的槽中，其中环形碳模板的带槽表面包括向上突出的 在其内周边处，其中每个凹槽从凹槽表面的内周边延伸到外周边。 槽形表面的台阶和每个含硅叶片的端部处的突起被环形碳构件包围，其中环形碳构件覆盖每个相应槽中的每个含硅叶片的上表面。 含硅材料沉积在环形碳模板，环形碳构件和每个含硅叶片的暴露部分上，从而形成预定厚度的含硅壳。 除去含硅壳的一部分，并且从含硅壳中除去环状碳模板和环形碳构件，留下含硅的限制环，其中含硅的叶片由含硅限制环的含硅壳支撑 。

    EDGE RING ASSEMBLY FOR PLASMA ETCHING CHAMBERS
    30.
    发明申请
    EDGE RING ASSEMBLY FOR PLASMA ETCHING CHAMBERS 审中-公开
    等离子体消声器的边缘环组件

    公开(公告)号：US20140367047A1

    公开(公告)日：2014-12-18

    申请号：US14470507

    申请日：2014-08-27

    Applicant: Lam Research Corporation

    Inventor： Michael S. Kang ,  Michael C. Kellogg ,  Miguel A. Saldana ,  Travis R. Taylor

    IPC: H01J37/32

    CPC classification number: H01J37/32642 ,  H01J37/32091

    Abstract: An edge ring assembly used in a plasma etching chamber includes a dielectric coupling ring and a conductive edge ring. In one embodiment, the dielectric coupling ring has an annular projection extending axially upward from its inner periphery. The dielectric coupling ring is adapted to surround a substrate support in a plasma etching chamber. The conductive edge ring is adapted to surround the annular projection of the dielectric coupling ring. A substrate supported on the substrate support overhangs the substrate support and overlies the annular projection of the dielectric coupling ring and a portion of the conductive edge ring. In another embodiment, the dielectric coupling ring has a rectangular cross section. The dielectric coupling ring and the conductive edge ring are adapted to surround a substrate support in a plasma etching chamber. A substrate supported on the substrate support overhangs the substrate support and overlies a portion of the conductive edge ring.

    Abstract translation: 用于等离子体蚀刻室的边缘环组件包括电介质耦合环和导电边缘环。 在一个实施例中，电介质耦合环具有从其内周向轴向上延伸的环形突起。 电介质耦合环适于围绕等离子体蚀刻室中的衬底支撑件。 导电边缘环适于围绕电介质耦合环的环形突起。 支撑在基板支撑件上的基板突出到基板支撑件上并且覆盖在介质耦合环的环形突起和导电边缘环的一部分上。 在另一个实施例中，电介质耦合环具有矩形横截面。 电介质耦合环和导电边缘环适于围绕等离子体蚀刻室中的衬底支撑。 支撑在基板支撑件上的基板突出到基板支撑件上并且覆盖在导电边缘环的一部分上。

Patent Agency Ranking