公开(公告)号：US20020163010A1

公开(公告)日：2002-11-07

申请号：US09849172

申请日：2001-05-04

Applicant: Motorola, Inc.

Inventor： Ravindranath Droopad ,  Dirk C. Jordan ,  Zhiyi Yu

IPC: H01L031/0328

CPC classification number: C30B25/18 ,  H01L21/02197 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02529 ,  H01L21/0254 ,  H01L21/31691

Abstract: High quality epitaxial layers (26) of wide bandgap materials can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22). The accommodating buffer layer (24) is a layer of monocrystalline oxide or nitride spaced apart from the silicon wafer (22) by an amorphous interface layer of silicon oxide (28). The layer of wide bandgap material (26) can be used to form electronic devices such as high frequency devices or light emitting devices such as lasers and light emitting diodes.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以生长宽带隙材料的高质量外延层（26），覆盖单晶衬底（22），例如大硅晶片。 实现顺应性衬底的形成的一种方法包括首先在硅晶片（22）上生长容纳缓冲层（24）。 容纳缓冲层（24）是通过氧化硅（28）的非晶界面层与硅晶片（22）间隔开的单晶氧化物或氮化物层。 宽带隙材料层（26）可用于形成诸如高频器件的电子器件或诸如激光器和发光二极管的发光器件。

公开(公告)号：US20020153524A1

公开(公告)日：2002-10-24

申请号：US09838273

申请日：2001-04-19

Applicant: Motorola Inc.

Inventor： Zhiyi Yu ,  Ravindranath Droopad ,  William J. Ooms

IPC: H01L029/12 ,  H01L021/00 ,  H01L027/12 ,  H01L031/0392

CPC classification number: H01L21/02507 ,  C30B25/18 ,  H01L21/02197 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02521 ,  H01L21/31691

Abstract: A high quality semiconductor structure includes a monocrystalline substrate and a perovskite stack overlying the substrate. The perovskite stack may be formed of a first accommodating layer formed of a first perovskite oxide material having a first lattice constant. A second accommodating layer is formed on the first accommodating layer. The second accommodating layer is formed of a second perovskite oxide material having a second lattice constant which is different from the first lattice constant of the first accommodating layer. A monocrystalline material layer is formed overlying the second accommodating layer. A strain is effected at the interface between the perovskite stack and the substrate, at the interface between the perovskite stack and the monocrystalline material layer and/or at the interface between the first accommodating layer and the second accommodating layer. The strain reduces defects in the monocrystalline material layer and results in reduced Schottky leakage current.

Abstract translation: 高质量的半导体结构包括单晶衬底和覆盖衬底的钙钛矿堆叠。 钙钛矿堆叠可以由具有第一晶格常数的第一钙钛矿氧化物材料形成的第一容纳层形成。 在第一容纳层上形成第二容纳层。 第二容纳层由具有与第一容纳层的第一晶格常数不同的第二晶格常数的第二钙钛矿氧化物材料形成。 在第二容纳层上形成单晶材料层。 在钙钛矿堆和衬底之间的界面处，在钙钛矿堆和单晶材料层之间的界面处和/或在第一容纳层和第二容纳层之间的界面处进行应变。 该应变降低了单晶材料层的缺陷，并导致肖特基漏电流减小。

公开(公告)号：US20020000584A1

公开(公告)日：2002-01-03

申请号：US09755340

申请日：2001-01-05

Applicant: Motorola, Inc.

Inventor： Kurt W. Eisenbeiser ,  Ravindranath Droopad ,  Zhiyi Yu

IPC: H01L021/00 ,  H01L031/0328 ,  H01L029/76

CPC classification number: H01L21/02381 ,  C23C16/26 ,  C30B25/02 ,  C30B25/18 ,  C30B29/04 ,  H01L21/02378 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/31691 ,  H01L21/318 ,  H01L21/8221 ,  H01L21/8258 ,  H01L23/66 ,  H01L27/0605 ,  H01L2924/0002 ,  H01L2924/00

Abstract: High quality epitaxial layers of conductive monocrystalline materials can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer(24) on a silicon wafer (22). The accommodating buffer layer (24) is a layer of monocrystalline material spaced apart from the silicon wafer (22) by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline accommodating buffer layer (24).

Abstract translation: 通过形成用于生长单晶层的顺应性衬底，可以将导电单晶材料的高质量外延层生长在覆盖单晶衬底（22），例如大硅晶片上。 实现顺应性衬底的形成的一种方法包括首先在硅晶片（22）上生长容纳缓冲层（24）。 容纳缓冲层（24）是通过氧化硅的非晶界面层（28）与硅晶片（22）间隔开的单晶材料层。 非晶界面层（28）耗散应变并允许高质量单晶容纳缓冲层（24）的生长。

公开(公告)号：US20030034500A1

公开(公告)日：2003-02-20

申请号：US09929018

申请日：2001-08-15

Applicant: MOTOROLA, INC.

Inventor： Alexander A. Demkov ,  Zhiyi Yu ,  Jamal Ramdani

IPC: H01L029/74

CPC classification number: C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L29/267

Abstract: High quality epitaxial layers of monocrystalline materials (106) can be grown overlying monocrystalline substrates (102) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating Zintl buffer layer (104) on a silicon wafer. Any lattice mismatch between the monocrystalline layer (106) and the underlying silicon substrate (102) is absorbed by the Zintl interface layer (104).

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料（106）的高质量外延层生长成覆盖单晶衬底（102），例如大的硅晶片。 实现顺应性衬底的形成的一种方式包括首先在硅晶片上生长容纳的Zintl缓冲层（104）。 单晶层（106）和下层硅衬底（102）之间的任何晶格失配被Zintl界面层（104）吸收。

公开(公告)号：US20030022525A1

公开(公告)日：2003-01-30

申请号：US09905098

申请日：2001-07-16

Applicant: MOTOROLA, INC.

Inventor： Ravindranath Droopad ,  Zhiyi Yu ,  Corey Overgaard

IPC: H01L021/31 ,  H01L021/469

CPC classification number: C30B23/02 ,  C30B25/02 ,  C30B25/18 ,  C30B25/20 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8221 ,  H01L21/8258 ,  H01L27/0605 ,  H01L27/0688 ,  H01L2924/00011 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2224/80001

Abstract: High quality epitaxial layers of monocrystalline materials (26) can be grown overlying monocrystalline substrates such as large silicon wafers (22) by forming a compliant substrate for growing the monocrystalline layers (26). An accommodating buffer layer comprises a layer of monocrystalline oxide (24) spaced apart from a silicon wafer (22) by an amorphous interface layer of silicon oxide (28). The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The silicon substrate (22) is intentionally nullmis-cutnull off a major axis to provide a surface that facilitates two dimensional growth of the low-defect monocrystalline material layer (26).

Abstract translation: 通过形成用于生长单晶层（26）的柔性衬底，可以将单晶材料（26）的高质量外延层生长成覆盖在单晶衬底例如大硅晶片（22）上。 容纳缓冲层包括通过氧化硅（28）的非晶界面层与硅晶片（22）间隔开的单晶氧化物层（24）。 非晶界面层（28）耗散应变并允许高质量单晶氧化物容纳缓冲层的生长。 硅衬底（22）有意地从长轴上“误切”，以提供便于低缺陷单晶材料层（26）的二维生长的表面。

公开(公告)号：US20030022431A1

公开(公告)日：2003-01-30

申请号：US09911473

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Zhiyi Yu ,  Ravindranath Droopad ,  Corey Overgaard

IPC: H01L029/76 ,  H01L029/94 ,  H01L021/8249

CPC classification number: C30B23/02 ,  C30B23/002 ,  C30B29/22 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L22/26

Abstract: High quality epitaxial layers of monocrystalline oxide materials (24) are grown overlying monocrystalline substrates such as large silicon wafers (22) using RHEED information to control the stoichiometry of the growing film. The monocrystalline oxide layer (24) may be used to form a compliant substrate for monocrystalline growth of additional layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22) spaced apart from the silicon wafer (22) by an amorphous interface layer of silicon oxide (28). The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer (24).

Abstract translation: 使用RHEED信息生长单晶氧化物材料（24）的高质量外延层覆盖在单晶衬底例如大硅晶片（22）上以控制生长膜的化学计量。 单晶氧化物层（24）可以用于形成用于附加层的单晶生长的柔顺衬底。 实现顺应性衬底的形成的一种方法包括首先通过氧化硅（28）的非晶界面层在与硅晶片（22）间隔开的硅晶片（22）上生长容纳缓冲层（24）。 非晶界面层（28）耗散应变并允许高质量单晶氧化物容纳缓冲层（24）的生长。

公开(公告)号：US20030020089A1

公开(公告)日：2003-01-30

申请号：US09911507

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Zhiyi Yu ,  Ravindranath Droopad ,  Corey Overgaard

IPC: H01L031/111

CPC classification number: H01L22/26 ,  C30B23/002 ,  C30B23/02 ,  H01L21/02197 ,  H01L21/02356 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/31691 ,  H01L21/8221 ,  H01L21/8258 ,  H01L2924/00011 ,  H01L2224/80001

Abstract: High quality epitaxial layers of monocrystalline oxide materials (24) are grown overlying monocrystalline substrates such as large silicon wafers (22) using RHEED information to monitor the growth rate of the growing film. The monocrystalline oxide layer (24) may be used to form a compliant substrate for monocrystalline growth of additional layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22) spaced apart from the silicon wafer (22) by an amorphous interface layer of silicon oxide (28). The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer (24).

公开(公告)号：US20020167005A1

公开(公告)日：2002-11-14

申请号：US09853744

申请日：2001-05-11

Applicant: Motorola, Inc

Inventor： Zhiyi Yu ,  Ravindranath Droopad ,  Corey Overgaard

IPC: H01L029/12 ,  H01L021/84 ,  H01L031/0392

CPC classification number: C30B25/18 ,  C30B23/02 ,  C30B25/02 ,  C30B29/32 ,  H01L28/56

Abstract: The present invention provides semiconductor structures and methods for forming semiconductor structures which include monocrystalline oxide films exhibiting both high dielectric constants and low leakage current densities. In accordance with various aspects of the invention, a semiconductor structure includes a monocrystalline semiconductor substrate and one or more stoichiometrically graduated monocrystalline oxide layers. The stoichiometrically graduated monocrystalline oxide layer may include a perovskite material, such as an alkaline-earth metal titanate. Semiconductor devices fabricated in accordance with aspects of the present invention exhibit a high dielectric constant as well as a reduced leakage current density.

Abstract translation: 本发明提供用于形成半导体结构的半导体结构和方法，其包括表现出高介电常数和低漏电流密度的单晶氧化物膜。 根据本发明的各个方面，半导体结构包括单晶半导体衬底和一个或多个化学计量分级的单晶氧化物层。 化学计量分级的单晶氧化物层可以包括钙钛矿材料，例如碱土金属钛酸盐。 根据本发明的方面制造的半导体器件具有高介电常数以及降低的漏电流密度。

公开(公告)号：US20010023660A1

公开(公告)日：2001-09-27

申请号：US09871958

申请日：2001-06-04

Applicant: MOTOROLA, INC.

Inventor： Zhiyi Yu ,  Ravindranath Droopad ,  Corey Daniel Overgaard ,  Jamal Ramdani ,  Jay A. Curless ,  Jerald A. Hallmark ,  William J. Ooms ,  Jun Wang

IPC: C30B025/00 ,  C30B023/00 ,  C30B028/12 ,  C30B028/14

CPC classification number: C30B23/02 ,  C30B25/02 ,  C30B29/16 ,  C30B29/30

Abstract: A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, oxygen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface. The interface comprises an atomic layer of silicon, oxygen, and a metal in the form XSiO2, where X is a metal.