摘要:
A method for making a semiconductor device is described. That method comprises forming a dummy dielectric layer that is at least about 10 angstroms thick on a substrate, and forming a sacrificial layer on the dummy dielectric layer. After removing the sacrificial layer and the dummy dielectric layer to generate a trench that is positioned between first and second spacers, a gate dielectric layer is formed on the substrate at the bottom of the trench, and a metal layer is formed on the gate dielectric layer.
摘要:
A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer on a substrate, and modifying a first portion of the high-k gate dielectric layer to ensure that it may be removed selectively to a second portion of the high-k gate dielectric layer.
摘要:
A nanotube transistor, such as a carbon nanotube transistor, may be formed with a top gate electrode and a spaced source and drain. Conduction along the transistor from source to drain is controlled by the gate electrode. Underlying the gate electrode are at least two nanotubes. In some embodiments, the substrate may act as a back gate.
摘要:
A semiconductor device comprising a semiconductor body having a top surface and a first and second laterally opposite sidewalls as formed on an insulating substrate is claimed. A gate dielectric is formed on the top surface of the semiconductor body and on the first and second laterally opposite sidewalls of the semiconductor body. A gate electrode is then formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the first and second laterally opposite sidewalls of the semiconductor body. The gate electrode comprises a metal film formed directly adjacent to the gate dielectric layer. A pair of source and drain regions are then formed in the semiconductor body on opposite sides of the gate electrode.
摘要:
In a metal gate replacement process, a stack of at least two polysilicon layers or other materials may be formed. Sidewall spacers may be formed on the stack. The stack may then be planarized. Next, the upper layer of the stack may be selectively removed. Then, the exposed portions of the sidewall spacers may be selectively removed. Finally, the lower portion of the stack may be removed to form a T-shaped trench which may be filled with the metal replacement.
摘要:
A wafer may be rotated while etching to displace bubbles that may form, for example, from a reaction between silicon and water. As a result, a hydrophobic layer, which would otherwise be created by the bubbles, cannot form, resulting in a more uniform etch rate in some embodiments.
摘要:
A method for etching a metal layer is described. That method comprises forming a metal layer on a substrate, then exposing part of the metal layer to a wet etch chemistry that comprises an active ingredient with a diameter that exceeds the thickness of the metal layer.
摘要:
A buffer layer and a high-k metal oxide dielectric may be formed over a smooth silicon substrate. The substrate smoothness may reduce column growth of the high-k metal oxide gate dielectric. The surface of the substrate may be saturated with hydroxyl terminations prior to deposition.
摘要:
A process capable of integrating both planar and non-planar transistors onto a bulk semiconductor substrate, wherein the channel of all transistors is definable over a continuous range of widths.
摘要:
A buffer layer and a high-k metal oxide dielectric may be formed over a smooth silicon substrate. The substrate smoothness may reduce column growth of the high-k metal oxide gate dielectric. The surface of the substrate may be saturated with hydroxyl terminations prior to deposition.