公开(公告)号：US20100011860A1

公开(公告)日：2010-01-21

申请号：US12459993

申请日：2009-07-09

Applicant: Michael Offenberg ,  Michael Baus

Inventor： Michael Offenberg ,  Michael Baus

IPC: G01P15/125 ,  G01P15/00 ,  H01L21/00

CPC classification number: G01P15/125 ,  G01P2015/0831

Abstract: A micromechanical sensor element includes: a substrate; a first seismic mass suspended from the substrate, which is deflectable from a first rest position by an acceleration acting perpendicularly to a main plane of extension; and a second seismic mass, which is deflectable from a second rest position by the acceleration. At least a partial overlap is provided between the first seismic mass and the second seismic mass perpendicular to the main plane of extension.

Abstract translation: 微机械传感器元件包括：基板; 从衬底悬挂的第一个地震质量块，其通过垂直于主平面延伸的加速度从第一静止位置偏转; 以及第二地震质量块，其可以通过加速度从第二静止位置偏转。 在第一抗震块与垂直于主延伸平面的第二震震块之间至少提供部分重叠。

公开(公告)号：US07273764B2

公开(公告)日：2007-09-25

申请号：US11028370

申请日：2005-01-03

Applicant: Frank Reichenbach ,  Stefan Pinter ,  Frank Henning ,  Hans Artmann ,  Helmut Baumann ,  Franz Laemer ,  Michael Offenberg ,  Georg Bischopink

Inventor： Frank Reichenbach ,  Stefan Pinter ,  Frank Henning ,  Hans Artmann ,  Helmut Baumann ,  Franz Laemer ,  Michael Offenberg ,  Georg Bischopink

IPC: H01L21/00

CPC classification number: B81C1/00293 ,  B81B2201/0228 ,  B81B2207/095 ,  B81C2201/0115 ,  B81C2203/0136 ,  B81C2203/0145

Abstract: The invention relates to a sensor with at least one silicon-based micromechanical structure, which is integrated with a sensor chamber of a foundation wafer, and with at least one covering that covers the foundation wafer in the region of the sensor chamber, and to a method for producing a sensor. It is provided that in the sensor of the invention, the covering (13) comprises a first layer (32) (deposition layer) that is permeable to an etching medium and the reaction products, and a hermetically sealing second layer (34) (sealing layer) located above it, and that in the method of the invention, at least the sensor chamber (28) present in the foundation wafer (11) after the establishment of the structure (26) is filled with an oxide (30), in particular CVD oxide or porous oxide; the sensor chamber (28) is covered by a first layer (32) (deposition layer), in particular of polysilicon, that is transparent to an etching medium and the reaction products or is retroactively made transparent; the oxide (30) in the sensor chamber (28) is removed through the deposition layer (32) with the etching medium; and next, a second layer (34) (sealing layer), in particular of metal or an insulator, is applied to the deposition layer (32) and hermetically seals off the sensor chamber (28).

Abstract translation: 本发明涉及具有至少一个硅基微机械结构的传感器，其与基础晶片的传感器室结合，并且在传感器室的区域中具有覆盖基础晶片的至少一个覆盖物，以及至少一个 传感器的制造方法 设置在本发明的传感器中，覆盖物（13）包括可蚀刻介质和反应产物的第一层（沉积层）和密封的第二层（34）（密封 层），并且在本发明的方法中，在建立结构（26）之后，至少存在于基础晶片（11）中的传感器室（28）填充有氧化物（30），其中 特定的CVD氧化物或多孔氧化物; 传感器室（28）由对蚀刻介质和反应产物透明的或者具有回溯性的透明的第一层（32）（沉积层）（特别是多晶硅）覆盖; 传感器室（28）中的氧化物（30）通过蚀刻介质通过沉积层（32）去除; 接下来，将特别是金属或绝缘体的第二层（34）（密封层）施加到沉积层（32）并气密地密封传感器室（28）。

公开(公告)号：US06214243B1

公开(公告)日：2001-04-10

申请号：US09051878

申请日：1998-10-20

Applicant: Horst Muenzel ,  Franz Laermer ,  Michael Offenberg ,  Andrea Schilp ,  Markus Lutz

Inventor： Horst Muenzel ,  Franz Laermer ,  Michael Offenberg ,  Andrea Schilp ,  Markus Lutz

IPC: B81B702

CPC classification number: G01C19/5747 ,  B81B3/0051 ,  B81B2201/0242 ,  B81B2203/058 ,  G01C19/5769

Abstract: A process for the manufacture of a Coriolis rate-of-rotation sensor with oscillatory support masses spring-suspended on a substrate as well as driving means for the excitation of the planar oscillation of the oscillating masses and evaluation means for the determination of a Coriolis acceleration. Oscillating masses, driving means and integrated stops are structured in a common operation by means of plasma etching from a silicon-on-insulator (SOI) wafer.

Abstract translation: 用于制造具有弹簧悬浮在基板上的振荡支撑质量的科里奥利旋转速度传感器的方法以及用于激发振荡块的平面振荡的驱动装置和用于确定科里奥利加速度的评估装置 。 通过从绝缘体上硅（SOI）晶片进行等离子体蚀刻，振荡质量，驱动装置和集成止动器通过共同的操作构成。

公开(公告)号：US6117701A

公开(公告)日：2000-09-12

申请号：US907601

申请日：1997-08-08

Applicant: Nicholas Buchan ,  Horst Muenzel ,  Franz Laermer ,  Michael Offenberg ,  Udo Bischof ,  Markus Lutz

Inventor： Nicholas Buchan ,  Horst Muenzel ,  Franz Laermer ,  Michael Offenberg ,  Udo Bischof ,  Markus Lutz

IPC: G01C19/56 ,  G01C19/5755 ,  G01C19/5769 ,  G01P15/08 ,  H01L29/84 ,  H01L41/08 ,  H01L21/00 ,  G01P15/00

CPC classification number: G01C19/5755 ,  G01C19/5769 ,  G01P15/0802 ,  G01P2015/0814

Abstract: A rate-of-rotation sensor includes a three-layer system. The rate-of-rotation sensor and the conductor traces are patterned out of the third layer. The conductor traces are electrically insulated (isolated) by cutouts from other regions of the third layer and by a second electrically insulating layer from a first layer. Thus, a simple electrical contacting (configuration) is achieved that is patterned out of a three-layer system. Since the same etching process is used for the first and the third layer, an especially efficient manufacturing is possible.

Abstract translation: 旋转速度传感器包括三层系统。 转速传感器和导体迹线从第三层图案化。 导体迹线通过从第三层的其它区域的切口和与第一层的第二电绝缘层的切口电绝缘（隔离）。 因此，实现了由三层系统构图的简单的电接触（构造）。 由于在第一和第三层使用相同的蚀刻工艺，所以可以进行特别有效的制造。

公开(公告)号：US6030850A

公开(公告)日：2000-02-29

申请号：US030414

申请日：1998-02-25

Applicant: Juergen Kurle ,  Karsten Funk ,  Franz Laermer ,  Michael Offenberg ,  Andrea Schilp

Inventor： Juergen Kurle ,  Karsten Funk ,  Franz Laermer ,  Michael Offenberg ,  Andrea Schilp

IPC: G01L1/18 ,  B81B3/00 ,  B81C1/00 ,  G01P15/08 ,  G01P15/125 ,  H01L29/84 ,  G01L1/00 ,  H01L21/461

CPC classification number: B81B7/007 ,  B81C1/0019 ,  G01P15/0802 ,  G01P15/125 ,  B81B2201/0235 ,  B81B2203/033 ,  B81C2201/0136 ,  B81C2203/0118 ,  G01P2015/0814

Abstract: In a sensor and a method for manufacturing a sensor, a movable element is patterned out of a silicon layer and is secured to a substrate. The conducting layer is subdivided into various regions, which are electrically insulated from one another. The electrical connection between the various regions of the silicon layer is established by a conducting layer, which is arranged between a first and a second insulating layer.

Abstract translation: 在传感器和制造传感器的方法中，可移动元件被图案化为硅层并固定到基底。 导电层被细分成彼此电绝缘的各个区域。 通过布置在第一和第二绝缘层之间的导电层来建立硅层的各个区域之间的电连接。

公开(公告)号：US5756901A

公开(公告)日：1998-05-26

申请号：US718603

申请日：1996-09-24

Applicant: Juergen Kurle ,  Karsten Funk ,  Franz Laermer ,  Michael Offenberg ,  Andrea Schilp

Inventor： Juergen Kurle ,  Karsten Funk ,  Franz Laermer ,  Michael Offenberg ,  Andrea Schilp

IPC: G01L1/18 ,  B81B3/00 ,  B81C1/00 ,  G01P15/08 ,  G01P15/125 ,  H01L29/84 ,  G01L1/00

CPC classification number: B81B7/007 ,  B81C1/0019 ,  G01P15/0802 ,  G01P15/125 ,  B81B2201/0235 ,  B81B2203/033 ,  B81C2201/0136 ,  B81C2203/0118 ,  G01P2015/0814

Abstract: In a sensor and a method for manufacturing a sensor, a movable element is patterned out of a silicon layer and is secured to a substrate. The conducting layer is subdivided into various regions, which are electrically insulated from one another. The electrical connection between the various regions of the silicon layer is established by a conducting layer, which is arranged between a first and a second insulating layer.

Abstract translation: 在传感器和制造传感器的方法中，可移动元件被图案化为硅层并固定到基底。 导电层被细分成彼此电绝缘的各个区域。 通过布置在第一和第二绝缘层之间的导电层来建立硅层的各个区域之间的电连接。

公开(公告)号：US5542558A

公开(公告)日：1996-08-06

申请号：US308245

申请日：1994-09-19

Applicant: Gerhard Benz ,  Jiri Marek ,  Martin Willmann ,  Frank Bantien ,  Horst Muenzel ,  Franz Laermer ,  Michael Offenberg ,  Andrea Schilp

Inventor： Gerhard Benz ,  Jiri Marek ,  Martin Willmann ,  Frank Bantien ,  Horst Muenzel ,  Franz Laermer ,  Michael Offenberg ,  Andrea Schilp

IPC: H01L29/84 ,  F16C11/06 ,  F16C23/04 ,  F16C33/10 ,  G01P15/08 ,  H01L21/3063 ,  H01L21/316 ,  H01L21/306

CPC classification number: G01P15/0802 ,  Y10S438/96

Abstract: A method for manufacturing micro-mechanical components in which a structure is produced on a silicon layer, which is to be undercut in a further step. The silicon is selectively anodized for this undercutting operation. Thus, the method enables the manufacturing of micro-mechanical components that can be integrated together with bipolar circuit elements.

Abstract translation: 一种制造微机械部件的方法，其中在另一步骤中将被切削的硅层上产生结构。 对于该底切操作，硅被选择性地阳极氧化。 因此，该方法能够制造可与双极电路元件集成在一起的微机械部件。

公开(公告)号：US06936902B2

公开(公告)日：2005-08-30

申请号：US10168584

申请日：2000-12-14

Applicant: Frank Reichenbach ,  Stefan Pinter ,  Frank Henning ,  Hans Artmann ,  Helmut Baumann ,  Franz Laemer ,  Michael Offenberg ,  Georg Bischopink

Inventor： Frank Reichenbach ,  Stefan Pinter ,  Frank Henning ,  Hans Artmann ,  Helmut Baumann ,  Franz Laemer ,  Michael Offenberg ,  Georg Bischopink

IPC: B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  H01L29/82

CPC classification number: B81C1/00293 ,  B81B2201/0228 ,  B81B2207/095 ,  B81C2201/0115 ,  B81C2203/0136 ,  B81C2203/0145

Abstract: A sensor has a foundation wafer having a sensor chamber, at least one silicon-based micromechanical structure integrated with the sensor chamber of the foundation wafer, at least one covering that covers the foundation wafer in a region of the sensor chamber, the covering including a first layer which is a deposition layer and is permeable to an etching medium and reaction products, and a hermetically sealing second layer which is a sealing layer and located above the first layer, the deposition layer which is the first layer being permeable in a region of the sensor chamber to the etching medium and a reaction product, the deposition layer for being permeable having structures selected from the group consisting of etching openings, porous regions, and both.

Abstract translation: 传感器具有基础晶片，其具有传感器室，与基础晶片的传感器室一体化的至少一个硅基微机械结构，在传感器室的区域中覆盖基础晶片的至少一个覆盖物，所述覆盖物包括： 第一层，其是沉积层并且可蚀刻介质和反应产物，以及作为密封层并位于第一层上方的密封第二层，作为第一层的沉积层在第一层的区域中是可渗透的 传感器室到蚀刻介质和反应产物，用于透过的沉积层具有选自蚀刻开口，多孔区域和两者的结构。

公开(公告)号：US06558559B1

公开(公告)日：2003-05-06

申请号：US09019011

申请日：1998-02-05

Applicant: Volker Becker ,  Franz Laermer ,  Michael Offenberg ,  Andrea Schilp

Inventor： Volker Becker ,  Franz Laermer ,  Michael Offenberg ,  Andrea Schilp

IPC: C23F100

CPC classification number: B81C1/00

Abstract: A method of sacrificial layer etching of micromechanical surface structures, in which a sacrificial layer is deposited on a heatable silicon substrate and is structured. A temperature difference between the substrate and the vapor phase of an etching medium is established in such a way that exposed metal contacts made of aluminum alloys are not attacked at the same time and are not subsequently exposed to any risk of corrosion.

Abstract translation: 一种牺牲层蚀刻微机械表面结构的方法，其中牺牲层沉积在可加热的硅衬底上并被构造。 蚀刻介质的衬底和气相之间的温度差异以这样的方式建立，使得由铝合金制成的暴露的金属触点不会同时受到冲击，并且不会随后暴露于任何腐蚀的风险。

公开(公告)号：US06368885B1

公开(公告)日：2002-04-09

申请号：US09641438

申请日：2000-08-17

Applicant: Michael Offenberg ,  Udo Bischof

Inventor： Michael Offenberg ,  Udo Bischof

IPC: G01R3126

CPC classification number: G01C19/5769 ,  B81C1/00801 ,  B81C2201/053 ,  G01P15/0802 ,  Y10S438/902 ,  Y10S438/928 ,  Y10S438/976

Abstract: A method for manufacturing a micromechanical component, in particular, a surface-micromechanical yaw sensor, includes the following steps: providing a substrate having a front side and a back side; forming a micromechanical pattern on the front side; applying a protective layer on the micromechanical pattern on the front side; forming a micromechanical pattern on the back side, a resting on the micromechanical pattern on the front side taking place at least temporarily; removing the protective layer on the front side; and optionally further processing the micromechanical pattern on the front side and/or the micromechanical pattern on the back side.

Abstract translation: 一种用于制造微机械部件，特别是表面微机械偏航传感器的方法包括以下步骤：提供具有前侧和后侧的基板; 在前侧形成微机械图案; 在前侧的微机械图案上施加保护层; 在后侧形成微机械图案，其至少暂时发生在正面上的微机械图案上; 去除前侧的保护层; 并且可选地进一步处理前侧上的微机械图案和/或后侧的微机械图案。