Method for fabricating a micromechanical component
    5.
    发明授权
    Method for fabricating a micromechanical component 有权
    微机械部件的制造方法

    公开(公告)号:US06268232B1

    公开(公告)日:2001-07-31

    申请号:US09302224

    申请日:1999-04-29

    IPC分类号: H01L2100

    摘要: A method for fabricating a micromechanical component, in particular a surface-micromechanical acceleration sensor, involves preparing a substrate and providing an insulation layer on the substrate, in which a patterned circuit trace layer is buried. A conductive layer, including a first region and a second region, is provided on the insulation layer, and a movable element is configured in the first region by forming a first plurality of trenches and by using an etching agent to remove at least one portion of the insulation layer from underneath the conductive layer. A contact element is formed and electrically connected to the circuit trace layer in the second region by configuring a second plurality of trenches, and the resultant movable element is encapsulated in the first region. The second plurality of trenches for forming the contact element in the second region is first formed after the encapsulation of the movable element formed in the first region.

    摘要翻译: 用于制造微机械部件,特别是表面微机械加速度传感器的方法涉及准备衬底并在衬底上提供绝缘层,其中掩埋有图案化的电路迹线层。 包括第一区域和第二区域的导电层设置在绝缘层上,并且可移动元件通过形成第一多个沟槽而被构造在第一区域中,并且通过使用蚀刻剂去除至少一部分 绝缘层从导电层下面。 通过构造第二多个沟槽,形成接触元件并在第二区域中电连接到电路迹线层,并且所得到的可移动元件被封装在第一区域中。 在第二区域中形成接触元件的第二多个沟槽首先在形成在第一区域中的可移动元件的封装之后形成。

    Acceleration sensor
    7.
    发明授权
    Acceleration sensor 有权
    加速度传感器

    公开(公告)号:US06055858A

    公开(公告)日:2000-05-02

    申请号:US362936

    申请日:1999-07-28

    摘要: An acceleration sensor is composed of a three-layer system. The acceleration sensor and conductor tracks are patterned out of the third layer. The conductor tracks are electrically isolated from other regions of the third layer by recesses and electrically insulated from a first layer by a second electrically insulating layer. In this manner, a simple electrical contacting is achieved, which is configured out of a three-layer system. One exemplary application of the acceleration sensor includes mounting the acceleration sensor on a vibrational system of an rpm (rate-of-rotation sensor). This simplifies the manufacturing of an rpm sensor, since the vibrational system and the acceleration sensor are configured out of a three-layer system, wherein the conductor tracks are run into the frame of the rpm sensor in which the vibrational system is suspended, so as to allow excursion.

    摘要翻译: 加速度传感器由三层系统组成。 将加速度传感器和导体轨迹从第三层图案化。 导体轨道通过凹部与第三层的其它区域电绝缘,并且通过第二电绝缘层与第一层电绝缘。 以这种方式,实现了由三层系统构成的简单的电接触。 加速度传感器的一个示例性应用包括将加速度传感器安装在rpm(转速传感器)的振动系统上。 这简化了rpm传感器的制造,因为振动系统和加速度传感器是由三层系统构成的,其中导体轨道运行到其中悬挂振动系统的转速传感器的框架中,以便 允许游览。

    Micromechanical sensor and method for the manufacture thereof
    10.
    发明授权
    Micromechanical sensor and method for the manufacture thereof 有权
    微机械传感器及其制造方法

    公开(公告)号:US06318175B1

    公开(公告)日:2001-11-20

    申请号:US09585141

    申请日:2000-06-01

    IPC分类号: G01P1500

    摘要: A micromechanical sensor includes a support of silicon substrate having an epitaxial layer of silicon applied on the silicon substrate. A part of the epitaxial layer is laid bare to form at least one micromechanical deflection part by an etching process. The bared deflection part is made of polycrystalline silicon which has grown in polycrystalline form during the epitaxial process over a silicon-oxide layer which has been removed by etching. In the support region and/or at the connection to the silicon substrate, the exposed deflection part passes into single crystal silicon. By large layer thicknesses, a large working capacity of the sensor is possible. The sensor structure provides enhanced mechanical stability, processability, and possibilities of shaping, and it can be integrated, in particular, in a bipolar process or mixed process (bipolar-CMOS, bipolar-CMOS-DMOS).

    摘要翻译: 微机械传感器包括具有施加在硅衬底上的硅的外延层的硅衬底的支撑体。 通过蚀刻工艺将外延层的一部分裸露以形成至少一个微机械偏转部分。 裸露的偏转部分由多晶硅制成,该多晶硅在外延生长过程中在已通过蚀刻去除的氧化硅层上形成多晶体。 在支撑区域和/或与硅衬底的连接处,暴露的偏转部分进入单晶硅。 通过大层厚度,传感器的大工作容量是可能的。 该传感器结构提供增强的机械稳定性,可加工性和成形的可能性,并且其可以特别集成在双极工艺或混合工艺(双极CMOS,双极CMOS-DMOS)中。