摘要:
A process for the manufacture of a Coriolis rate-of-rotation sensor with oscillatory support masses spring-suspended on a substrate as well as driving means for the excitation of the planar oscillation of the oscillating masses and evaluation means for the determination of a Coriolis acceleration. Oscillating masses, driving means and integrated stops are structured in a common operation by means of plasma etching from a silicon-on-insulator (SOI) wafer.
摘要:
A method for manufacturing sensors from a multilayer plate with upper and lower monocrystalline silicon layers and an etching layer between them. The upper silicon layer is structured by the introduction of troughs therein extending down to the etching layer. Sensor structures, such as a bending beam that is used in an acceleration sensor, are created by etching the etching layer beneath a part of the silicon layer structured in this manner.
摘要:
A method for manufacturing micro-mechanical components in which a structure is produced on a silicon layer, which is to be undercut in a further step. The silicon is selectively anodized for this undercutting operation. Thus, the method enables the manufacturing of micro-mechanical components that can be integrated together with bipolar circuit elements.
摘要:
A rate-of-rotation sensor includes a three-layer system. The rate-of-rotation sensor and the conductor traces are patterned out of the third layer. The conductor traces are electrically insulated (isolated) by cutouts from other regions of the third layer and by a second electrically insulating layer from a first layer. Thus, a simple electrical contacting (configuration) is achieved that is patterned out of a three-layer system. Since the same etching process is used for the first and the third layer, an especially efficient manufacturing is possible.
摘要:
A method for fabricating a micromechanical component, in particular a surface-micromechanical acceleration sensor, involves preparing a substrate and providing an insulation layer on the substrate, in which a patterned circuit trace layer is buried. A conductive layer, including a first region and a second region, is provided on the insulation layer, and a movable element is configured in the first region by forming a first plurality of trenches and by using an etching agent to remove at least one portion of the insulation layer from underneath the conductive layer. A contact element is formed and electrically connected to the circuit trace layer in the second region by configuring a second plurality of trenches, and the resultant movable element is encapsulated in the first region. The second plurality of trenches for forming the contact element in the second region is first formed after the encapsulation of the movable element formed in the first region.
摘要:
A bonding pad structure, in particular for a micromechanical sensor, includes a substrate, an electrically insulating sacrificial layer provided on the substrate, a patterned conductor path layer buried in the sacrificial layer, a contact hole provided in the sacrificial layer, and a bonding pad base, composed of an electrically conductive material. The bonding pad base has a first region extending over the sacrificial layer, and a second layer in contact with the conductor path region and extending through the contact hole. A protective layer is provided at least temporarily on the sacrificial layer in a specific region beneath and around the bonding pad base to prevent underetching of the sacrificial layer beneath the bonding pad base during etching of the sacrificial layer in such a way that the substrate and/or the conductor path is exposed.
摘要:
An acceleration sensor is composed of a three-layer system. The acceleration sensor and conductor tracks are patterned out of the third layer. The conductor tracks are electrically isolated from other regions of the third layer by recesses and electrically insulated from a first layer by a second electrically insulating layer. In this manner, a simple electrical contacting is achieved, which is configured out of a three-layer system. One exemplary application of the acceleration sensor includes mounting the acceleration sensor on a vibrational system of an rpm (rate-of-rotation sensor). This simplifies the manufacturing of an rpm sensor, since the vibrational system and the acceleration sensor are configured out of a three-layer system, wherein the conductor tracks are run into the frame of the rpm sensor in which the vibrational system is suspended, so as to allow excursion.
摘要:
An acceleration sensor is composed of a three layer system. The acceleration sensor and conductor tracks are patterned out of the third layer. The conductor tracks are electrically isolated from other regions of the third layer by recesses and electrically insulated from a first layer by a second electrically insulating layer. In this manner, a simple electrical contacting is achieved, which is configured out of a three-layer system.
摘要:
An acceleration sensor is composed of a three-layer system. The acceleration sensor and conductor tracks are patterned out of the third layer. The conductor tracks are electrically isolated from other regions of the third layer by recesses and electrically insulated from a first layer by a second electrically insulating layer. In this manner, a simple electrical contacting is achieved, which is configured out of a three-layer system.
摘要:
A micromechanical sensor includes a support of silicon substrate having an epitaxial layer of silicon applied on the silicon substrate. A part of the epitaxial layer is laid bare to form at least one micromechanical deflection part by an etching process. The bared deflection part is made of polycrystalline silicon which has grown in polycrystalline form during the epitaxial process over a silicon-oxide layer which has been removed by etching. In the support region and/or at the connection to the silicon substrate, the exposed deflection part passes into single crystal silicon. By large layer thicknesses, a large working capacity of the sensor is possible. The sensor structure provides enhanced mechanical stability, processability, and possibilities of shaping, and it can be integrated, in particular, in a bipolar process or mixed process (bipolar-CMOS, bipolar-CMOS-DMOS).