公开(公告)号：US20180237343A1

公开(公告)日：2018-08-23

申请号：US15956898

申请日：2018-04-19

Applicant: NGK INSULATORS, LTD.

Inventor： Kei SATO ,  Takahiro MAEDA ,  Morimichi WATANABE ,  Tsutomu NANATAKI

IPC: C04B35/115 ,  C01F7/30 ,  C30B1/12

CPC classification number: C04B35/115 ,  C01F7/021 ,  C01F7/023 ,  C01F7/30 ,  C01P2004/20 ,  C01P2004/54 ,  C01P2004/61 ,  C04B35/10 ,  C04B35/622 ,  C04B35/632 ,  C04B35/6342 ,  C04B35/638 ,  C04B35/645 ,  C04B2235/3206 ,  C04B2235/5292 ,  C04B2235/5296 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6025 ,  C04B2235/6567 ,  C04B2235/787 ,  C30B1/04 ,  C30B1/12 ,  C30B28/02 ,  C30B29/20

Abstract: A method for producing an oriented sintered body according to the present invention includes the steps of: (a) preparing a multilayer body, the multilayer body including a layer including a fine raw-material powder and a layer including a plate-like raw-material powder which are alternately stacked each other, particles of the plate-like raw-material powder being arranged such that surfaces of the particles of the plate-like raw-material powder extend along a surface of the layer including a fine raw-material powder; and (b) sintering the multilayer body.

公开(公告)号：US20180179665A1

公开(公告)日：2018-06-28

申请号：US15902294

申请日：2018-02-22

Applicant: NGK INSULATORS, LTD.

Inventor： Morimichi WATANABE ,  Kei SATO ,  Kiyoshi MATSUSHIMA ,  Tsutomu NANATAKI

IPC: C30B29/20 ,  H01L33/00 ,  H01L21/02 ,  H01L21/683 ,  C30B25/18 ,  C30B19/02 ,  C01F7/02

CPC classification number: C30B29/20 ,  C01F7/02 ,  C01P2002/54 ,  C04B35/111 ,  C04B35/6342 ,  C04B35/638 ,  C04B35/645 ,  C04B2235/3206 ,  C04B2235/5292 ,  C04B2235/6025 ,  C04B2235/6567 ,  C04B2235/6586 ,  C04B2235/72 ,  C04B2235/727 ,  C04B2235/728 ,  C04B2235/786 ,  C04B2235/787 ,  C30B1/12 ,  C30B19/02 ,  C30B19/12 ,  C30B25/18 ,  C30B25/183 ,  C30B28/02 ,  C30B29/406 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/6835 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32 ,  H01L2221/68345 ,  H01L2221/6835

Abstract: An oriented alumina substrate for epitaxial growth according to an embodiment of the present invention includes crystalline grains constituting a surface thereof, the crystalline grains having a tilt angle of 1° or more and 3° or less and an average sintered grain size of 20 μm or more.

公开(公告)号：US20220029022A1

公开(公告)日：2022-01-27

申请号：US17450706

申请日：2021-10-13

Applicant: NGK INSULATORS, LTD.

Inventor： Morimichi WATANABE ,  Hiroshi FUKUI

IPC: H01L29/786 ,  H01L29/04

Abstract: Provided is a semiconductor film having a corundum-type crystal structure composed of α-Ga2O3 or an α-Ga2O3 solid solution, and an X-ray rocking curve full width at half maximum of a (104) plane on at least one surface of the semiconductor film is 500 arcsec or less.

公开(公告)号：US20210404090A1

公开(公告)日：2021-12-30

申请号：US17467979

申请日：2021-09-07

Applicant: NGK INSULATORS, LTD.

Inventor： Morimichi WATANABE ,  Jun YOSHIKAWA

IPC: C30B29/40 ,  H01L21/02 ,  C30B25/18

Abstract: Provided is a base substrate including an orientation layer used for crystal growth of a nitride or oxide of a Group 13 element. A front surface of the orientation layer on a side used for crystal growth is composed of a material having a corundum-type crystal structure having an a-axis length and/or c-axis length larger than that of sapphire. The orientation layer contains a solid solution containing two or more selected from the group consisting of α-Al2O3, α-Cr2O3, α-Fe2O3, α-Ti2O3, α-V2O3, and α-Rh2O3.

公开(公告)号：US20210404089A1

公开(公告)日：2021-12-30

申请号：US17467895

申请日：2021-09-07

Applicant: NGK INSULATORS, LTD.

Inventor： Morimichi WATANABE ,  Jun YOSHIKAWA

IPC: C30B29/40 ,  H01L21/02 ,  C30B25/18

Abstract: Provided is a base substrate including an orientation layer used for crystal growth of a nitride or oxide of a Group 13 element, in which a front surface on a side used for the crystal growth of the orientation layer is composed of a material having a corundum-type crystal structure having an a-axis length and/or c-axis length larger than that of sapphire, the orientation layer contains a material selected from the group consisting of α-Cr2O3, α-Fe2O3, α-Ti2O3, α-V2O3, and α-Rh2O3, or a solid solution containing two or more selected from the group consisting of α-Al2O3, α-Cr2O3, α-Fe2O3, α-Ti2O3, α-V2O3, and α-Rh2O3, and a half width of an X-ray rocking curve of a (104) plane of the corundum-type crystal structure is 500 arcsec. or less.

公开(公告)号：US20210355602A1

公开(公告)日：2021-11-18

申请号：US17443828

申请日：2021-07-28

Applicant: NGK INSULATORS, LTD.

Inventor： Hiroshi FUKUI ,  Morimichi WATANABE ,  Jun YOSHIKAWA

IPC: C30B25/18 ,  C30B29/40 ,  C30B29/16 ,  C30B29/60

Abstract: Provided is a ground substrate includes an orientation layer used for crystal growth of a nitride or oxide of a Group 13 element. The front surface of the orientation layer on the side used for the crystal growth is composed of a material having a corundum-type crystal structure having an a-axis length and/or c-axis length larger than that of sapphire. A plurality of pores are present in the orientation layer.

公开(公告)号：US20210301422A1

公开(公告)日：2021-09-30

申请号：US17303967

申请日：2021-06-11

Applicant: NGK INSULATORS, LTD.

Inventor： Risa MIYAKAZE ,  Kiyoshi MATSUSHIMA ,  Jun YOSHIKAWA ,  Morimichi WATANABE

IPC: C30B29/36 ,  C30B23/02

Abstract: A SiC composite substrate includes a SiC single crystal layer and at least one biaxially oriented SiC layer. The at least one biaxially oriented SiC layer is disposed on the SiC single crystal. In the biaxially oriented SiC layer, the SiC is oriented in both a c-axis direction and an a-axis direction. The biaxially oriented SiC layer has pores and has a density of defect reaching the surface of 1.0×101/cm2 or less.

公开(公告)号：US20180244579A1

公开(公告)日：2018-08-30

申请号：US15903146

申请日：2018-02-23

Applicant: NGK INSULATORS, LTD.

Inventor： Morimichi WATANABE ,  Kiyoshi MATSUSHIMA ,  Kei SATO ,  Tsutomu NANATAKI

IPC: C04B35/115 ,  C04B35/645

Abstract: A method for producing a transparent alumina sintered body according to the present invention includes (a) a step of preparing an alumina raw material powder containing a plate-like alumina powder having an aspect ratio of 3 or more and a fine alumina powder having an average particle diameter smaller than that of the plate-like alumina powder so that, when a mixing ratio of the plate-like alumina powder to the fine alumina powder in terms of mass ratio is assumed to be T:(100−T), T is 0.001 or more and less than 1, and so that a mass ratio R1 of F relative to A1 in the alumina raw material powder is less than 15 ppm; (b) a step of forming a raw material for forming containing the alumina raw material powder into a compact; and (c) a step of sintering the compact so as to obtain a transparent alumina sintered body.

公开(公告)号：US20170174524A1

公开(公告)日：2017-06-22

申请号：US15446539

申请日：2017-03-01

Applicant: NGK INSULATORS, LTD.

Inventor： Hiroshi FUKUI ,  Kei SATO ,  Morimichi WATANABE ,  Tsutomu NANATAKI

IPC: C01F7/02 ,  C30B33/00 ,  C30B1/10 ,  C30B29/20 ,  C01F7/30 ,  C30B1/02

CPC classification number: C01F7/021 ,  C01F7/30 ,  C01F7/441 ,  C01F7/442 ,  C01P2004/03 ,  C01P2004/22 ,  C01P2004/24 ,  C01P2004/54 ,  C01P2004/61 ,  C01P2004/62 ,  C01P2006/80 ,  C04B35/111 ,  C04B35/115 ,  C04B35/6261 ,  C04B35/62675 ,  C04B2235/3217 ,  C04B2235/445 ,  C04B2235/5292 ,  C04B2235/5296 ,  C04B2235/5436 ,  C04B2235/72 ,  C04B2235/787 ,  C30B1/026 ,  C30B1/10 ,  C30B29/20 ,  C30B33/00

Abstract: A plate-like alumina powder production method of the present invention comprises placing a transition alumina and a fluoride in a container such that the transition alumina and the fluoride do not come into contact with each other and then performing heat treatment to obtain a plate-like α-alumina powder. The transition alumina is preferably at least one selected from the group consisting of gibbsite, boehmite, and γ-alumina. It is preferable that the amount of the fluoride used is set such that the percentage ration of F in the fluoride to the transition alumina is 0.017% by mass or more. The container preferably has a volume such that a value obtained by dividing the mass of F in the fluoride by the volume of the container is 6.5×10−5 g/cm3 or more. The heat treatment is preferably performed at the temperature of 750 to 1,650° C.

公开(公告)号：US20170053801A1

公开(公告)日：2017-02-23

申请号：US15346831

申请日：2016-11-09

Applicant: NAGOYA INSTITUTE OF TECHNOLOGY ,  NGK INSULATORS, LTD.

Inventor： Masaki TANEMURA ,  Morimichi WATANABE ,  Jun YOSHIKAWA ,  Tsutomu NANATAKI

IPC: H01L21/02 ,  H01J37/32 ,  C23C14/58 ,  C23C14/22 ,  C23C14/08

CPC classification number: H01L21/02554 ,  C23C14/0021 ,  C23C14/086 ,  C23C14/22 ,  C23C14/325 ,  C23C14/5806 ,  H01J37/32055 ,  H01J2237/332 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02579 ,  H01L21/02614 ,  H01L21/02631

Abstract: There is provided a production method which enables stable formation of a p-type zinc oxide film and also is suitable for enlarging the area of the film. The method for producing a p-type zinc oxide film according to the present invention comprises the steps of: placing a target containing a zinc source and a substrate in a gas atmosphere containing a nitrogen source and an oxygen source and having a gas pressure of 0.1 Pa to 100 Pa, and exposing the target to arc discharge, thereby forming a precursor film containing zinc and oxygen on the substrate; and annealing the precursor film in an oxidizing atmosphere, thereby forming a p-type zinc oxide film.

Abstract translation: 提供了能够稳定地形成p型氧化锌膜的制造方法，并且也适合于扩大膜的面积。 根据本发明的p型氧化锌膜的制造方法包括以下步骤：将含有锌源和基板的靶放置在含有氮源和氧源的气体气氛中，气体压力为0.1 Pa至100Pa，并将靶暴露于电弧放电，从而在衬底上形成含有锌和氧的前体膜; 并在氧化气氛中退火前体膜，由此形成p型氧化锌膜。