公开(公告)号：US6136685A

公开(公告)日：2000-10-24

申请号：US868595

申请日：1997-06-03

Applicant: Pravin Narwankar ,  Laxman Murugesh ,  Turgut Sahin ,  Maciek Orczyk ,  Jianmin Qiao

Inventor： Pravin Narwankar ,  Laxman Murugesh ,  Turgut Sahin ,  Maciek Orczyk ,  Jianmin Qiao

IPC: H01L21/205 ,  C23C16/40 ,  C23C16/505 ,  C23C16/52 ,  H01L21/31 ,  H01L21/316 ,  H01L21/4763

CPC classification number: H01L21/02131 ,  C23C16/401 ,  C23C16/505 ,  C23C16/52 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31629

Abstract: An insulating film with a low dielectric constant is more quickly formed on a substrate by reducing the co-etch rate as the film is deposited. The process gas is formed into a plasma from silicon-containing and fluorine-containing gases. The plasma is biased with an RF field to enhance deposition of the film. Deposition and etching occur simultaneously. The relative rate of deposition to etching is increased in the latter portion of the deposition process by decreasing the bias RF power, which decreases the surface temperature of the substrate and decreases sputtering and etching activities. Processing time is reduced compared to processes with fixed RF power levels. Film stability, retention of water by the film, and corrosion of structures on the substrate are all improved. The film has a relatively uniform and low dielectric constant and may fill trenches with aspect ratios of at least 4:1 and gaps less than 0.5 .mu.m.

Abstract translation: 当薄膜沉积时，通过降低共蚀刻速率，在衬底上更迅速地形成具有低介电常数的绝缘膜。 工艺气体由含硅和含氟气体形成等离子体。 等离子体被RF场偏置以增强膜的沉积。 沉积和蚀刻同时发生。 通过降低偏压RF功率，沉积过程的后一部分，相对于蚀刻的相对速率增加，这降低了衬底的表面温度并降低了溅射和蚀刻活性。 与具有固定RF功率级别的处理相比，处理时间缩短。 薄膜的稳定性，薄膜的水分保持性以及基板上的结构的腐蚀都得到改善。 该膜具有相对均匀和低的介电常数，并且可以填充具有至少4:1的纵横比和小于0.5μm的间隙的沟槽。

公开(公告)号：US5937323A

公开(公告)日：1999-08-10

申请号：US868286

申请日：1997-06-03

Applicant: Maciek Orczyk ,  Laxman Murugesh ,  Pravin Narwankar

Inventor： Maciek Orczyk ,  Laxman Murugesh ,  Pravin Narwankar

IPC: H01L21/31 ,  C03C3/06 ,  C23C16/40 ,  C23C16/46 ,  H01L21/3105 ,  H01L21/316

CPC classification number: C23C16/463 ,  C03C3/06 ,  C23C16/401 ,  C23C16/46 ,  H01L21/02131 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/31625 ,  C03C2201/12 ,  C03C2203/46

Abstract: A sequence of process steps forms a fluorinated silicon glass (FSG) layer on a substrate. This layer is much less likely to form a haze or bubbles in the layer, and is less likely to desorb water vapor during subsequent processing steps than other FSG layers. An undoped silicon glass (USG) liner protects the substrate from corrosive attack. The USG liner and FSG layers are deposited on a relatively hot wafer surface and can fill trenches on the substrate as narrow as 0.8 .mu.m with an aspect ratio of up to 4.5:1.

Abstract translation: 一系列工艺步骤在衬底上形成氟化硅玻璃（FSG）层。 该层在层中不太可能形成雾状或气泡，并且在后续处理步骤中比其他FSG层更不可能解吸水蒸汽。 未掺杂的硅玻璃（USG）衬垫可保护基材免受腐蚀性侵袭。 USG衬垫和FSG层沉积在相对热的晶片表面上，并且可以将衬底上的沟槽填充到0.8μm的窄度，纵横比高达4.5:1。

公开(公告)号：US08662941B2

公开(公告)日：2014-03-04

申请号：US13454317

申请日：2012-04-24

Applicant: Pravin Narwankar ,  Victor Pushparaj ,  Dieter Haas

Inventor： Pravin Narwankar ,  Victor Pushparaj ,  Dieter Haas

IPC: H01R4/16

CPC classification number: C23C16/52 ,  C23C16/44

Abstract: Apparatus for supporting the wires in a hot wire chemical vapor deposition (HWCVD) system are provided herein. In some embodiments, a terminal connector for a hot wire chemical vapor deposition (HWCVD) system may include a base; a wire clamp moveably disposed with relation to the base along an axis; a reflector shield extending from the wire clamp in a first direction along the axis; and a tensioner coupled to the base and wire clamp to bias the wire clamp in a second direction opposite the first direction.

Abstract translation: 本文提供了用于在热线化学气相沉积（HWCVD）系统中支撑电线的装置。 在一些实施例中，用于热线化学气相沉积（HWCVD）系统的终端连接器可以包括基座; 线夹，其相对于所述基部沿着轴线可移动地设置; 沿着所述轴线沿着第一方向从所述线夹延伸的反射器护罩; 以及张紧器，其联接到所述基座和线夹，以在与所述第一方向相反的第二方向偏置所述线夹。

公开(公告)号：US08343279B2

公开(公告)日：2013-01-01

申请号：US11127753

申请日：2005-05-12

Applicant: Nyi Oo Myo ,  Kenric Choi ,  Shreyas Kher ,  Pravin Narwankar ,  Steve Poppe ,  Craig R. Metzner ,  Paul Deaten

Inventor： Nyi Oo Myo ,  Kenric Choi ,  Shreyas Kher ,  Pravin Narwankar ,  Steve Poppe ,  Craig R. Metzner ,  Paul Deaten

IPC: C23C16/00

CPC classification number: C23C16/4488 ,  C23C16/0272 ,  C23C16/40 ,  C23C16/401 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45544 ,  C23C16/45582 ,  C23C16/56 ,  Y02T50/67 ,  Y10T137/0357 ,  Y10T137/0396 ,  Y10T137/2087

Abstract: Embodiments of the invention provide apparatuses and methods for depositing materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD). In one embodiment, a chamber contains a substrate support with a receiving surface and a chamber lid containing an expanding channel formed within a thermally insulating material. The chamber further includes at least one conduit coupled to a gas inlet within the expanding channel and positioned to provide a gas flow through the expanding channel in a circular direction, such as a vortex, a helix, a spiral or derivatives thereof. The expanding channel may be formed directly within the chamber lid or formed within a funnel liner attached thereon. The chamber may contain a retaining ring, an upper process liner, a lower process liner or a slip valve liner. Liners usually have a polished surface finish and contain a thermally insulating material such as fused quartz or ceramic. In an alternative embodiment, a deposition system contains a catalytic water vapor generator connected to an ALD chamber.

Abstract translation: 本发明的实施例提供了在诸如原子层沉积（ALD）的气相沉积工艺期间在衬底上沉积材料的设备和方法。 在一个实施例中，腔室包含具有接收表面的衬底支撑件和包含形成在绝热材料内的扩张通道的腔室盖。 腔室还包括至少一个管道，其连接到膨胀通道内的气体入口并且定位成提供在圆形方向（例如涡流，螺旋，螺旋或其衍生物）上的气流通过膨胀通道。 膨胀通道可以直接形成在室盖内，或者形成在其内附着的漏斗衬套中。 腔室可以包含保持环，上加工衬套，下工艺衬垫或滑阀衬套。 衬里通常具有抛光表面光洁度并且包含绝热材料，例如熔融石英或陶瓷。 在替代实施例中，沉积系统包含连接到ALD室的催化水蒸汽发生器。

公开(公告)号：US20080044569A1

公开(公告)日：2008-02-21

申请号：US11925681

申请日：2007-10-26

Applicant: Nyi Myo ,  Kenric Cho ,  Shreyas Kher ,  Pravin Narwankar ,  Steve Poppe ,  Craig Metzner ,  Paul Deaten

Inventor： Nyi Myo ,  Kenric Cho ,  Shreyas Kher ,  Pravin Narwankar ,  Steve Poppe ,  Craig Metzner ,  Paul Deaten

IPC: C23C16/00

CPC classification number: C23C16/4488 ,  C23C16/0272 ,  C23C16/40 ,  C23C16/401 ,  C23C16/405 ,  C23C16/4412 ,  C23C16/45529 ,  C23C16/45531 ,  C23C16/45544 ,  C23C16/45582 ,  C23C16/56 ,  Y02T50/67 ,  Y10T137/0357 ,  Y10T137/0396 ,  Y10T137/2087

Abstract: Embodiments of the invention provide methods for depositing materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD). In one embodiment, a chamber contains a substrate support with a receiving surface and a chamber lid containing an expanding channel formed within a thermally insulating material. The chamber further includes at least one conduit coupled to a gas inlet within the expanding channel and positioned to provide a gas flow through the expanding channel in a circular direction, such as a vortex, a helix, a spiral, or derivatives thereof. The expanding channel may be formed directly within the chamber lid or formed within a funnel liner attached thereon. The chamber may contain a retaining ring, an upper process liner, a lower process liner or a slip valve liner. Liners usually have a polished surface finish and contain a thermally insulating material such as fused quartz or ceramic. In an alternative embodiment, a deposition system contains a catalytic water vapor generator connected to an ALD chamber.

Abstract translation: 本发明的实施例提供了在诸如原子层沉积（ALD）的气相沉积工艺期间在衬底上沉积材料的方法。 在一个实施例中，腔室包含具有接收表面的衬底支撑件和包含形成在绝热材料内的扩张通道的腔室盖。 腔室还包括至少一个管道，其连接到膨胀通道内的气体入口并且定位成提供在圆形方向（例如涡流，螺旋，螺旋或其衍生物）上的气体流过膨胀通道。 膨胀通道可以直接形成在室盖内，或者形成在其内附着的漏斗衬套中。 腔室可以包含保持环，上加工衬套，下工艺衬垫或滑阀衬套。 衬里通常具有抛光表面光洁度并且包含绝热材料，例如熔融石英或陶瓷。 在替代实施例中，沉积系统包含连接到ALD室的催化水蒸汽发生器。

公开(公告)号：US06677254B2

公开(公告)日：2004-01-13

申请号：US09911947

申请日：2001-07-23

Applicant: Pravin Narwankar ,  Mouloud Bakli ,  Ravi Rajagopalan ,  Randall S. Urdahl ,  Asher Sinensky ,  Shankarram Athreya

Inventor： Pravin Narwankar ,  Mouloud Bakli ,  Ravi Rajagopalan ,  Randall S. Urdahl ,  Asher Sinensky ,  Shankarram Athreya

IPC: H01L2131

CPC classification number: H01L28/40 ,  H01L21/3143 ,  H01L21/31604 ,  H01L28/56

Abstract: The formation of a barrier layer over a high k dielectric layer and deposition of a conducting layer over the barrier layer prevents intermigration between the species of the high k dielectric layer and the conducting layer and prevents oxygen scavenging of the high k dielectric layer. One example of a capacitor stack device provided includes a high k dielectric layer of Ta2O5, a barrier layer of TaON or TiON formed at least in part by a remote plasma process, and a top electrode of TiN. The processes may be conducted at about 300 to 700° C. and are thus useful for low thermal budget applications. Also provided are MIM capacitor constructions and methods in which an insulator layer is formed by remote plasma oxidation of a bottom electrode.

Abstract translation: 在高k电介质层上形成阻挡层并且在阻挡层上沉积导电层可防止高k电介质层与导电层之间的迁移，并防止高k介电层的氧清除。 提供的电容器堆叠装置的一个示例包括Ta 2 O 5的高k电介质层，至少部分由远程等离子体工艺形成的TaON或TiON的阻挡层和TiN的顶部电极。 该方法可以在约300-700℃下进行，因此可用于低热预算应用。 还提供了MIM电容器结构和其中通过底部电极的远程等离子体氧化形成绝缘体层的方法。

公开(公告)号：US06337289B1

公开(公告)日：2002-01-08

申请号：US09405554

申请日：1999-09-24

Applicant: Pravin Narwankar ,  Turgut Sahin

Inventor： Pravin Narwankar ,  Turgut Sahin

IPC: H01L21469

CPC classification number: H01L21/7687 ,  H01L28/40

Abstract: The present invention describes a method of processing a substrate. According to the present invention a dielectric layer is formed on the substrate. The dielectric layer is then exposed in a first chamber to activated nitrogen atoms formed in a second chamber to form a nitrogen passivated dielectric layer. A metal nitride film is then formed on the nitrogen passivated dielectric layer.

公开(公告)号：US06200911B1

公开(公告)日：2001-03-13

申请号：US09264990

申请日：1998-04-21

Applicant: Pravin Narwankar ,  Sameer Desai ,  Walter Zygmunt ,  Turgut Sahin ,  Laxman Murugesh

Inventor： Pravin Narwankar ,  Sameer Desai ,  Walter Zygmunt ,  Turgut Sahin ,  Laxman Murugesh

IPC: H01L2131

CPC classification number: C23C16/4411 ,  C23C16/045 ,  C23C16/4405 ,  C23C16/4412 ,  C23C16/46 ,  C23C16/507 ,  C23C16/52 ,  H01J37/321 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/76224

Abstract: A method and apparatus for modifying the profile of narrow, high-aspect-ratio gaps on a semiconductor substrate are used to fill the gaps in a void-free manner. Differential heating characteristics of a substrate in a high-density plasma chemical vapor deposition (HDP-CVD) system helps to prevent the gaps from being pinched off before they are filled. The power distribution between coils forming the plasma varies the angular dependence of the sputter etch component of the plasma, and thus may be used to modify the gap profile, independently or in conjunction with differential heating. A heat source may be applied to the backside of a substrate during the concurrent deposition/etch process to further enhance the profile modification characteristics of differential heating.

公开(公告)号：US5976993A

公开(公告)日：1999-11-02

申请号：US623445

申请日：1996-03-28

Applicant: K. V. Ravi ,  Kent Rossman ,  Turgut Sahin ,  Pravin Narwankar

Inventor： K. V. Ravi ,  Kent Rossman ,  Turgut Sahin ,  Pravin Narwankar

IPC: C23C16/40 ,  C23C16/517 ,  H01L21/316 ,  H01L21/02

CPC classification number: H01L21/02164 ,  C23C16/402 ,  C23C16/517 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31612

Abstract: A layer of reduced stress is formed on a substrate using an HDP-CVD system by delaying or interrupting the application of capacitively coupled RF energy. The layer is formed by introducing a process gas into the HDP system chamber and forming a plasma from the process gas by the application of RF power to an inductive coil. After a selected period, a second layer of the film is deposited by maintaining the inductively-coupled plasma and biasing the plasma toward the substrate to enhance the sputtering effect of the plasma. In a preferred embodiment, the deposited film is a silicon oxide film, and biasing is performed by application of capacitively coupled RF power from RF generators to a ceiling plate electrode and wafer support electrode.

Abstract translation: 通过延迟或中断电容耦合RF能量的应用，使用HDP-CVD系统在衬底上形成一层减小的应力。 通过将工艺气体引入HDP系统室并通过将RF功率施加到感应线圈从工艺气体形成等离子体而形成该层。 在选定的时间段之后，通过维持电感耦合等离子体并且将等离子体偏压到衬底来沉积膜的第二层，以增强等离子体的溅射效应。 在优选实施例中，沉积膜是氧化硅膜，并且通过将来自RF发生器的电容耦合的RF功率施加到顶板电极和晶片支撑电极来执行偏置。