公开(公告)号：US09640630B2

公开(公告)日：2017-05-02

申请号：US14719762

申请日：2015-05-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Setsuo Nakajima ,  Yasuyuki Arai

IPC: G02F1/1345 ,  H01L29/51 ,  G02F1/1368 ,  H01L29/49 ,  H01L27/12 ,  H01L29/786 ,  G02F1/1362

CPC classification number: H01L29/511 ,  G02F1/1345 ,  G02F1/1368 ,  G02F2001/136231 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L27/1248 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/78669

Abstract: In a semiconductor device, a first interlayer insulating layer made of an inorganic material and formed on inverse stagger type TFTs, a second interlayer insulating layer made of an organic material and formed on the first interlayer insulating layer, and a pixel electrode formed in contact with the second interlayer insulating layer are disposed on a substrate, and an input terminal portion that is electrically connected to a wiring of another substrate is provided on an end portion of the substrate. The input terminal portion includes a first layer made of the same material as that of the gate electrode and a second layer made of the same material as that of the pixel electrode. With this structure, the number of photomasks used in the photolithography method can be reduced to 5.

公开(公告)号：US09397117B2

公开(公告)日：2016-07-19

申请号：US14702118

申请日：2015-05-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satohiro Okamoto ,  Yasuyuki Arai ,  Ikuko Kawamata ,  Atsushi Miyaguchi ,  Yoshitaka Moriya

IPC: G06F1/16 ,  H01L27/12

CPC classification number: H05K1/189 ,  G02F1/133305 ,  G02F1/13452 ,  G02F1/167 ,  G06F3/0412 ,  G06F2203/04102 ,  G09G3/2096 ,  G09G3/3208 ,  G09G3/36 ,  G09G3/3611 ,  G09G5/003 ,  G09G5/39 ,  G09G2300/0421 ,  G09G2300/0478 ,  H01L27/1218 ,  H01L27/1225 ,  H05K2201/10128

Abstract: The display device includes: a flexible display panel including a display portion in which scanning lines and signal lines cross each other; a supporting portion for supporting an end portion of the flexible display panel; a signal line driver circuit for outputting a signal to the signal line, which is provided for the supporting portion; and a scanning line driver circuit for outputting a signal to the scanning line, which is provided for a flexible surface of the display panel in a direction which is perpendicular or substantially perpendicular to the supporting portion.

公开(公告)号：US09343570B2

公开(公告)日：2016-05-17

申请号：US14510503

申请日：2014-10-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasuyuki Arai ,  Jun Koyama

IPC: H01L29/78 ,  H01L27/12 ,  H01L29/66 ,  G02F1/1333 ,  G02F1/1339 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/786 ,  G02F1/1345

CPC classification number: H01L29/78621 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/13394 ,  G02F1/134309 ,  G02F1/13454 ,  G02F1/136227 ,  G02F1/13624 ,  G02F1/136277 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/13396 ,  G02F2001/13398 ,  G02F2001/136245 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02208 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02667 ,  H01L21/0273 ,  H01L21/3065 ,  H01L21/3081 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1274 ,  H01L27/1288 ,  H01L29/167 ,  H01L29/66742 ,  H01L29/66757 ,  H01L29/7833 ,  H01L29/78672 ,  H01L29/78675 ,  Y10S438/919

Abstract: A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel unit is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an inter-layer insulation film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks.

公开(公告)号：US20150370144A1

公开(公告)日：2015-12-24

申请号：US14838676

申请日：2015-08-28

Applicant: Semiconductor Energy Laboratory Co., LTD.

Inventor： Shunpei Yamazaki ,  Yasuyuki Arai

IPC: G02F1/167 ,  G02F1/1368 ,  G02F1/1333 ,  H01L51/05 ,  H01L51/00

CPC classification number: G02F1/167 ,  G02B26/026 ,  G02F1/133305 ,  G02F1/1368 ,  G02F2001/1672 ,  G02F2001/1676 ,  G02F2001/1678 ,  G02F2201/123 ,  G09F9/372 ,  G09G3/344 ,  H01L51/0097 ,  H01L51/0545

Abstract: A constitution of the display device of the invention is shown in the following. The display device includes a pixel unit including TFTs of which the active layer contains an organic semiconductor material for forming channel portions in the opening portions in an insulating layer arranged to meet the gate electrodes. The pixel unit further includes a contrast media formed on the electrodes connected to the TFTs for changing the reflectivity upon the application of an electric field, or microcapsules containing electrically charged particles that change the reflectivity upon the application of an electric field. The pixel unit is sandwiched by plastic substrates, and barrier layers including an inorganic insulating material are provided between the plastic substrates and the pixel unit. The purpose of the present invention is to supply display devices which are excellent in productivity, light in weight and flexible.

Abstract translation: 以下示出本发明的显示装置的结构。 显示装置包括像素单元，其包括TFT，其中有源层包含有机半导体材料，用于在布置成与栅电极相遇的绝缘层中的开口部分中形成沟道部分。 像素单元还包括形成在连接到TFT上的电极上用于改变施加电场时的反射率的造影剂，或者包含在施加电场时改变反射率的带电粒子的微胶囊。 像素单元被塑料基板夹持，并且在塑料基板和像素单元之间设置包括无机绝缘材料的阻挡层。 本发明的目的是提供生产率优良，重量轻且柔软的显示装置。

公开(公告)号：US09196809B2

公开(公告)日：2015-11-24

申请号：US13793487

申请日：2013-03-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasuyuki Arai ,  Yasuo Nakamura ,  Yukie Suzuki ,  Yoshitaka Moriya

IPC: H01L33/00 ,  H01L33/62 ,  H01L51/52 ,  F21L4/00 ,  F21S6/00 ,  F21S8/00 ,  F21S8/04 ,  F21S8/08 ,  F21S8/10 ,  F21W131/103 ,  F21Y101/02 ,  F21Y105/00 ,  H01L51/50

CPC classification number: H01L51/504 ,  F21L4/005 ,  F21S6/00 ,  F21S8/033 ,  F21S8/04 ,  F21S8/08 ,  F21S41/14 ,  F21W2131/103 ,  F21Y2105/00 ,  F21Y2115/10 ,  F21Y2115/15 ,  H01L33/62 ,  H01L51/5036 ,  H01L51/52 ,  H01L51/5203 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/5225 ,  H01L2251/5361 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An object of the present invention is to reduce the thickness of a lighting device using an electroluminescent material. Another object of the present invention is to simplify the structure of a lighting device using an electroluminescent material to reduce cost. A light-emitting element having a stacked structure of a first electrode layer, an EL layer, and a second electrode layer is provided over a substrate having an opening in its center, and a first connecting portion and a second connecting portion for supplying electric power to the light-emitting element are provided in the center of the substrate (in the vicinity of the opening provided in the substrate).

Abstract translation: 本发明的目的是减少使用电致发光材料的照明装置的厚度。 本发明的另一个目的是简化使用电致发光材料的照明装置的结构，以降低成本。 具有第一电极层，EL层和第二电极层的堆叠结构的发光元件设置在其中心具有开口的基板上，第一连接部分和用于提供电力的第二连接部分 发光元件设置在基板的中心（设置在基板的开口附近）。

公开(公告)号：US09093655B2

公开(公告)日：2015-07-28

申请号：US13789727

申请日：2013-03-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasuyuki Arai

IPC: H01L29/04 ,  H01L31/036 ,  H01L33/00 ,  H01L51/50 ,  H01L27/12 ,  G09G3/32 ,  H01L27/32 ,  H01L29/786

CPC classification number: H01L27/3262 ,  G09G3/3208 ,  G09G3/3233 ,  G09G2300/0417 ,  G09G2300/0814 ,  G09G2300/0842 ,  G09G2310/0251 ,  G09G2320/0233 ,  H01L27/1285 ,  H01L27/1296 ,  H01L27/3244 ,  H01L27/3248 ,  H01L27/3276 ,  H01L29/78645 ,  H01L51/0097 ,  H01L51/50 ,  H01L51/5206 ,  H01L51/5221

Abstract: At least two TFTs which are connected with a light emitting element are provided, crystallinities of semiconductor regions composing active layers of the respective TFTs are made different from each other. As the semiconductor region, a region obtained by crystallizing an amorphous semiconductor film by laser annealing is applied. In order to change the crystallinity, a method of changing a scan direction of a continuous oscillating laser beam so that crystal growth directions are made different from each other is applied. Alternatively, a method of changing a channel length direction of TFT between the respective semiconductor regions without changing the scan direction of the continuous oscillating laser beam so that a crystal growth direction and a current flowing direction are different from each other is applied.

公开(公告)号：US09041875B2

公开(公告)日：2015-05-26

申请号：US14179787

申请日：2014-02-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Setsuo Nakajima ,  Yasuyuki Arai

IPC: G02F1/136 ,  G02F1/1368 ,  G02F1/1345 ,  H01L29/49 ,  H01L27/12 ,  G02F1/1362

CPC classification number: H01L29/511 ,  G02F1/1345 ,  G02F1/1368 ,  G02F2001/136231 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L27/1248 ,  H01L27/1288 ,  H01L29/4908 ,  H01L29/78669

Abstract: In a semiconductor device, a first interlayer insulating layer made of an inorganic material and formed on inverse stagger type TFTs, a second interlayer insulating layer made of an organic material and formed on the first interlayer insulating layer, and a pixel electrode formed in contact with the second interlayer insulating layer are disposed on a substrate, and an input terminal portion that is electrically connected to a wiring of another substrate is provided on an end portion of the substrate. The input terminal portion includes a first layer made of the same material as that of the gate electrode and a second layer made of the same material as that of the pixel electrode. With this structure, the number of photomasks used in the photolithography method can be reduced to 5.

Abstract translation: 在半导体装置中，由反无交错型TFT构成的无机材料形成的第一层间绝缘层，形成在第一层间绝缘层上的由有机材料构成的第二层间绝缘层和与第一层间绝缘层形成的像素电极 第二层间绝缘层设置在基板上，并且在基板的端部上设置与另一基板的布线电连接的输入端子部。 输入端子部分包括由与栅电极相同的材料制成的第一层和由与像素电极相同的材料制成的第二层。 利用这种结构，光刻方法中使用的光掩模的数量可以减少到5个。

公开(公告)号：US08772766B2

公开(公告)日：2014-07-08

申请号：US13867471

申请日：2013-04-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasuyuki Arai

IPC: H01L29/04

CPC classification number: H01L51/5237 ,  H01L27/3244 ,  H01L51/524 ,  H01L51/5259 ,  H01L51/5275 ,  H01L51/5281 ,  H01L2251/5315 ,  H05B33/04

Abstract: An organic EL display device of active matrix type wherein insulated-gate field effect transistors formed on a single-crystal semiconductor substrate are overlaid with an organic EL layer; characterized in that the single-crystal semiconductor substrate (413 in FIG. 4) is held in a vacant space (414) which is defined by a bed plate (401) and a cover plate (405) formed of an insulating material, and a packing material (404) for bonding the bed and cover plates; and that the vacant space (414) is filled with an inert gas and a drying agent, whereby the organic EL layer is prevented from oxidizing.

Abstract translation: 其中有源矩阵型的有机EL显示器件，其中形成在单晶半导体衬底上的绝缘栅场效应晶体管与有机EL层重叠; 其特征在于，单晶半导体衬底（图4中的413）保持在由隔板（401）和由绝缘材料形成的盖板（405）限定的空白空间（414）中，并且 包装材料（404），用于粘合床和盖板; 并且空置空间（414）填充有惰性气体和干燥剂，由此防止有机EL层氧化。

公开(公告)号：US20140175444A1

公开(公告)日：2014-06-26

申请号：US14193597

申请日：2014-02-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yasuyuki Arai ,  Jun Koyama

IPC: H01L27/12

CPC classification number: H01L27/1222 ,  G02F1/13454 ,  H01L23/552 ,  H01L23/60 ,  H01L24/83 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/14601 ,  H01L29/78621 ,  H01L29/78624 ,  H01L2924/00011 ,  H01L2924/01079 ,  H01L2924/07811 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2224/83851 ,  H01L2924/00

Abstract: A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, a GOLD structure or an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel portion is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an interlayer insulating film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks.

Abstract translation: 驱动电路的p沟道TFT具有单个漏极结构及其n沟道TFT，GOLD结构或LDD结构。 像素TFT具有LDD结构。 设置在像素部分中的像素电极通过在至少由无机绝缘材料形成的保护绝缘膜中钻孔并形成在像素TFT的栅电极之上的孔连接到像素TFT，并且在设置在像素TFT上的层间绝缘膜中 绝缘膜与其紧密接触。 这些处理步骤使用6到8张照片掩模。

公开(公告)号：US20140117364A1

公开(公告)日：2014-05-01

申请号：US14147799

申请日：2014-01-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hideomi Suzawa ,  Koji Ono ,  Yasuyuki Arai

IPC: H01L27/12

CPC classification number: H01L27/1222 ,  G02F1/13454 ,  H01L21/32136 ,  H01L27/1237 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1277 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78645 ,  H01L2029/7863

Abstract: By providing appropriate TFT structures arranged in various circuits of the semiconductor device in response to the functions required by the circuits, it is made possible to improve the operating performances and the reliability of a semiconductor device, reduce power consumption as well as realizing reduced manufacturing cost and increase in yield by lessening the number of processing steps. An LDD region of a TFT is formed to have a concentration gradient of an impurity element for controlling conductivity which becomes higher as the distance from a drain region decreases. In order to form such an LDD region having a concentration gradient of an impurity element, the present invention uses a method in which a gate electrode having a taper portion is provided to thereby dope an ionized impurity element for controlling conductivity accelerated in the electric field so that it penetrates through the gate electrode and a gate insulating film into a semiconductor layer.

Abstract translation: 通过根据电路所要求的功能，在半导体器件的各种电路中设置适当的TFT结构，可以提高半导体器件的工作性能和可靠性，降低功耗并降低制造成本 并通过减少处理步骤的数量来提高产量。 TFT的LDD区域形成为具有用于控制导电性的杂质元素的浓度梯度，该杂质元素随着与漏极区的距离减小而变高。 为了形成具有杂质元素的浓度梯度的这样的LDD区域，本发明使用了具有锥形部的栅电极的方法，从而掺杂电离杂质元素，以控制在电场中加速的电导率，从而 其穿过栅电极和栅绝缘膜进入半导体层。