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    LIGHT-EMITTING DIODE AND APPLICATION THEREFOR
    25.
    发明申请
    LIGHT-EMITTING DIODE AND APPLICATION THEREFOR 有权
    发光二极管及其应用

    公开(公告)号：US20150287762A1

    公开(公告)日：2015-10-08

    申请号：US14745271

    申请日：2015-06-19

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jong Hyeon Chae ,  Joon Sup Lee ,  Won Young Roh ,  Min Woo Kang ,  Jong Min Jang ,  Hyun A Kim ,  Daewoong Suh

    IPC: H01L27/15 ,  H01L33/14 ,  H01L33/40 ,  H01L33/44 ,  H01L33/24

    CPC classification number: H01L27/153 ,  H01L24/24 ,  H01L25/0753 ,  H01L33/08 ,  H01L33/20 ,  H01L33/38 ,  H01L33/405 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2924/12041 ,  H01L2924/00

    Abstract: A light-emitting diode is provided to include: a transparent substrate having a first surface, a second surface, and a side surface; a first conductive semiconductor layer positioned on the first surface of the transparent substrate; a second conductive semiconductor layer positioned on the first conductive semiconductor layer; an active layer positioned between the first conductive semiconductor layer and the second conductive semiconductor layer; a first pad electrically connected to the first conductive semiconductor layer; and a second pad electrically connected to the second conductive semiconductor layer, wherein the transparent substrate is configured to discharge light generated by the active layer through the second surface of the transparent substrate, and the light-emitting diode has a beam angle of at least 140 degrees or more. Accordingly, a light-emitting diode suitable for a backlight unit or a surface lighting apparatus can be provided.

    Abstract translation: 提供了一种发光二极管，其包括：具有第一表面，第二表面和侧表面的透明基板; 位于透明基板的第一表面上的第一导电半导体层; 位于所述第一导电半导体层上的第二导电半导体层; 位于所述第一导电半导体层和所述第二导电半导体层之间的有源层; 电连接到第一导电半导体层的第一焊盘; 以及电连接到所述第二导电半导体层的第二焊盘，其中所述透明基板被配置为通过所述透明基板的所述第二表面放电由所述有源层产生的光，并且所述发光二极管的光束角为至少140 度以上。 因此，可以提供适用于背光单元或表面照明装置的发光二极管。

    Light emitting diode
    28.
    发明授权
    Light emitting diode 有权

    公开(公告)号：US10998479B2

    公开(公告)日：2021-05-04

    申请号：US16158305

    申请日：2018-10-12

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Se Hee Oh ,  Hyun A Kim ,  Jong Kyu Kim ,  Hyoung Jin Lim

    IPC: H01L33/62 ,  H01L33/10 ,  H01L25/075 ,  H01L33/32 ,  H01L33/50 ,  F21S41/141 ,  H01L33/44 ,  H01L27/15 ,  H01L33/38 ,  H01L33/40 ,  H01L33/64 ,  H01L33/46 ,  H01L33/08 ,  H01L33/22

    Abstract: A light emitting diode includes a first light emitting cell and a second light emitting cell comprising an n-type semiconductor layer, and a p-type semiconductor layer, respectively; reflection structures contacting the p-type semiconductor layers; a first contact layer in ohmic contact with the n-type semiconductor layer of the first light emitting cell; a second contact layer in ohmic contact with the n-type semiconductor layer of the second light emitting cell and connected to the reflection structure on the first light emitting cell. An n-electrode pad is connected to the first contact layer; and a p-electrode pad is connected to the reflection structure on the second light emitting cell. The first light emitting cell and the second light emitting cell are isolated from each other, and their outer side surfaces are inclined steeper than the inner sides. Therefore, a forward voltage may be lowered and light output may be improved.

    Highly reliable light emitting diode
    29.
    发明授权
    Highly reliable light emitting diode 有权

    公开(公告)号：US10985304B2

    公开(公告)日：2021-04-20

    申请号：US16464679

    申请日：2017-10-11

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Se Hee Oh ,  Hyun A Kim ,  Joon Sup Lee ,  Min Woo Kang ,  Hyoung Jin Lim

    IPC: H01L33/64 ,  H01L27/15 ,  H01L33/10 ,  H01L33/20 ,  H01L33/40 ,  H01L33/62 ,  H01L33/36 ,  H01L33/02 ,  H01L33/60

    Abstract: A light emitting diode including a first semiconductor layer, a mesa disposed thereon and including a second semiconductor layer and an active layer, an ohmic reflection layer disposed on the mesa to form an ohmic contact with the second semiconductor layer, a lower insulation layer covering the mesa and the ohmic reflection layer and partially exposing the first semiconductor layer and the ohmic reflection layer, a first pad metal layer disposed on the lower insulation layer and electrically connected to the first semiconductor layer, a metal reflection layer disposed on the lower insulation layer and laterally spaced apart from the first pad metal layer, and an upper insulation layer covering the first pad metal layer and the metal reflection layer, and having a first opening exposing the first pad metal layer, in which at least a portion of the metal reflection layer covers a side surface of the mesa.

    Light emitting diode, method of fabricating the same and LED module having the same
    30.
    发明授权
    Light emitting diode, method of fabricating the same and LED module having the same 有权

    公开(公告)号：US10950755B2

    公开(公告)日：2021-03-16

    申请号：US17024167

    申请日：2020-09-17

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jong Hyeon Chae ,  Joon Sup Lee ,  Daewoong Suh ,  Won Young Roh ,  Min Woo Kang ,  Jong Min Jang ,  Se Hee Oh ,  Hyun A Kim

    IPC: H01L33/38 ,  H01L33/40 ,  H01L33/44

    Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.

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