公开(公告)号：US10648102B2

公开(公告)日：2020-05-12

申请号：US15865391

申请日：2018-01-09

Applicant: SLT TECHNOLOGIES, INC.

Inventor： Wenkan Jiang ,  Dirk Ehrentraut ,  Mark P. D'Evelyn

IPC: C30B29/40 ,  C01B21/06 ,  H01L29/20 ,  H01L29/30 ,  C30B7/10

Abstract: Gallium-containing nitride crystals are disclosed, comprising: a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001) +c-plane and a (000-1) −c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen greater than about 5×1017 cm−3; an impurity concentration of oxygen between about 2×1017 cm−3 and about 1×1020 cm−3; an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and CI greater than about 1×1016 cm−3; a compensation ratio between about 1.0 and about 4.0; an absorbance per unit thickness of at least 0.01 cm−1 at wavenumbers of approximately 3175 cm−1, 3164 cm−1, and 3150 cm−1; and wherein, at wavenumbers between about 3200 cm−1 and about 3400 cm−1 and between about 3075 cm−1 and about 3125 cm−1, said gallium-containing nitride crystal is essentially free of infrared absorption peaks having an absorbance per unit thickness greater than 10% of the absorbance per unit thickness at 3175 cm−1.

公开(公告)号：US10604865B2

公开(公告)日：2020-03-31

申请号：US16019528

申请日：2018-06-26

Applicant: SLT Technologies, Inc

Inventor： Mark P. D'Evelyn ,  Dirk Ehrentraut ,  Derrick S. Kamber ,  Bradley C. Downey

IPC: C30B19/02 ,  C30B29/40 ,  C30B7/10 ,  C30B23/04 ,  C30B25/04

Abstract: Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules.

公开(公告)号：US10145026B2

公开(公告)日：2018-12-04

申请号：US13908836

申请日：2013-06-03

Applicant: SLT TECHNOLOGIES, INC.

Inventor： Mark P. D'Evelyn ,  Dirk Ehrentraut ,  Derrick S. Kamber ,  Bradley C. Downey

IPC: C30B29/40 ,  C30B7/10

Abstract: Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules.

公开(公告)号：US10094017B2

公开(公告)日：2018-10-09

申请号：US15011266

申请日：2016-01-29

Applicant: SLT TECHNOLOGIES, INC.

Inventor： Douglas W. Pocius ,  Derrick S. Kamber ,  Mark P. D'Evelyn ,  Jonathan D. Cook

IPC: C23C16/30 ,  C23C16/44 ,  C30B7/10 ,  C30B29/40 ,  C23C16/01 ,  C01B21/06

Abstract: A process of preparing polycrystalline group III nitride chunks comprising the steps of (a) placing a group III metal inside a source chamber; (b) flowing a halogen-containing gas over the group III metal to form a group III metal halide; (c) contacting the group III metal halide with a nitrogen-containing gas in a deposition chamber containing a foil, the foil comprising at least one of Mo, W, Ta, Pd, Pt, Ir, or Re; (d) forming a polycrystalline group III nitride layer on the foil within the deposition chamber; (e) removing the polycrystalline group III nitride layer from the foil; and (f) comminuting the polycrystalline group III nitride layer to form the polycrystalline group III nitride chunks, wherein the removing and the comminuting are performed in any order or simultaneously.

公开(公告)号：US20180282897A1

公开(公告)日：2018-10-04

申请号：US15474806

申请日：2017-03-30

Applicant: SLT TECHNOLOGIES, INC.

Inventor： Rajeev Tirumala Pakalapati ,  Mark P. D'Evelyn

IPC: C30B7/10 ,  C30B7/14 ,  C30B29/40

CPC classification number: C30B7/105 ,  C30B7/14 ,  C30B29/406

Abstract: An apparatus for processing material at elevated pressure, the apparatus comprising: (a) two or more radial restraint structures defining an interior region configured to receive a processing chamber, the radial restraint structures being configured to resist an outward radial force from the interior region; (b) upper and lower crown members being disposed axially on either end of the interior region and configured to resist an outward axial force from the interior region; (c) a first axial restraint structure coupling the upper crown member and the lower crown member to provide axial restraint of the upper crown member and the lower crown; and (d) a second axial restraint structure compressing the two or more radial restraint structures to provide an axial restraint of the two or more radial restraint structures.

公开(公告)号：US11898269B2

公开(公告)日：2024-02-13

申请号：US16868528

申请日：2020-05-06

Applicant: SLT Technologies, Inc

Inventor： Wenkan Jiang ,  Dirk Ehrentraut ,  Mark P. D'Evelyn

IPC: C30B29/40 ,  C01B21/06 ,  H01L29/20 ,  H01L29/30 ,  C30B7/10

CPC classification number: C30B29/406 ,  C01B21/0632 ,  C30B7/105 ,  H01L29/2003 ,  H01L29/30 ,  C01P2002/30 ,  C01P2002/74 ,  C01P2002/80 ,  C01P2006/80

Abstract: A gallium-containing nitride crystals are disclosed, comprising: a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001)+c-plane and a (000-1)−c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen greater than about 5×1017 cm−3, an impurity concentration of oxygen between about 2×1017 cm−3 and about 1×1020 cm−3, an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl greater than about 1×1016 cm−3, a compensation ratio between about 1.0 and about 4.0; an absorbance per unit thickness of at least 0.01 cm−1 at wavenumbers of approximately 3175 cm−1, 3164 cm−1, and 3150 cm−1, and wherein, at wavenumbers between about 3200 cm−1 and about 3400 cm−1 and between about 3075 cm−1 and about 3125 cm−1, said gallium-containing nitride crystal is essentially free of infrared absorption peaks having an absorbance per unit thickness greater than 10% of the absorbance per unit thickness at 3175 cm.

公开(公告)号：USRE49677E1

公开(公告)日：2023-10-03

申请号：US17013487

申请日：2020-09-04

Applicant: SLT Technologies, Inc

Inventor： Mark P. D'Evelyn ,  Michael Ragan Krames

IPC: C30B25/18 ,  H01L33/00 ,  C30B23/02 ,  C30B29/40 ,  H01L21/02 ,  H01L21/78 ,  H01L29/04 ,  H01L29/20 ,  H01L29/36 ,  H01L31/00 ,  H01L31/0304 ,  H01L31/18 ,  H01L33/32 ,  H01S5/30

CPC classification number: C30B25/18 ,  C30B23/025 ,  C30B29/406 ,  H01L21/0254 ,  H01L21/7813 ,  H01L29/04 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/36 ,  H01L31/00 ,  H01L31/03044 ,  H01L31/1856 ,  H01L31/1892 ,  H01L33/0075 ,  H01L33/0093 ,  H01L33/32 ,  H01S5/3013 ,  Y02E10/544

Abstract: Techniques for processing materials for manufacture of gallium-containing nitride substrates are disclosed. More specifically, techniques for fabricating and reusing large area substrates using a combination of processing techniques are disclosed. The methods can be applied to fabricating substrates of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others. Such substrates can be used for a variety of applications including optoelectronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photo detectors, integrated circuits, transistors, and others.

公开(公告)号：US11721549B2

公开(公告)日：2023-08-08

申请号：US17173169

申请日：2021-02-10

Applicant: SLT Technologies, Inc.

Inventor： Mark P. D'Evelyn ,  Wenkan Jiang ,  Drew W. Cardwell ,  Dirk Ehrentraut

IPC: H01L29/20 ,  H01L29/36 ,  H01L21/02

CPC classification number: H01L21/02647 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/02389 ,  H01L21/02642 ,  H01L29/2003 ,  H01L29/36

Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

公开(公告)号：US11705322B2

公开(公告)日：2023-07-18

申请号：US16882219

申请日：2020-05-22

Applicant: SLT Technologies, Inc

Inventor： Wenkan Jiang ,  Mark P. D'Evelyn ,  Derrick S. Kamber ,  Dirk Ehrentraut ,  Jonathan D. Cook ,  James Wenger

IPC: C30B7/10 ,  C30B7/00 ,  C30B29/40 ,  H01L29/20 ,  H01L21/02 ,  C30B33/10 ,  H01L29/778 ,  H01L33/32

CPC classification number: H01L21/02005 ,  C30B7/005 ,  C30B7/105 ,  C30B29/406 ,  C30B33/10 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L29/2003 ,  H01L29/7788 ,  H01L33/32

Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

公开(公告)号：US10174438B2

公开(公告)日：2019-01-08

申请号：US15474806

申请日：2017-03-30

Applicant: SLT TECHNOLOGIES, INC.

Inventor： Rajeev Tirumala Pakalapati ,  Mark P. D'Evelyn

IPC: C30B7/14 ,  C30B7/10 ,  C30B29/40

Abstract: An apparatus for processing material at elevated pressure, the apparatus comprising: (a) two or more radial restraint structures defining an interior region configured to receive a processing chamber, the radial restraint structures being configured to resist an outward radial force from the interior region; (b) upper and lower crown members being disposed axially on either end of the interior region and configured to resist an outward axial force from the interior region; (c) a first axial restraint structure coupling the upper crown member and the lower crown member to provide axial restraint of the upper crown member and the lower crown; and (d) a second axial restraint structure compressing the two or more radial restraint structures to provide an axial restraint of the two or more radial restraint structures.