ACTIVE BACKPLANE FOR THIN SILICON SOLAR CELLS
    26.
    发明申请
    ACTIVE BACKPLANE FOR THIN SILICON SOLAR CELLS 审中-公开
    薄硅太阳能电池的主动背板

    公开(公告)号:US20160013335A1

    公开(公告)日:2016-01-14

    申请号:US14615335

    申请日:2015-02-05

    Applicant: SOLEXEL, INC.

    CPC classification number: H01L31/022441 H01L31/0516 H01L31/1804 Y02E10/50

    Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, attaching a prepreg backplane to the interdigitated pattern of base electrodes and emitter electrodes, forming holes in the prepreg backplane which provide access to the first layer of electrically conductive metal, and depositing a second layer of electrically conductive metal on the backside surface of the prepreg backplane forming an electrical interconnect with the first layer of electrically conductive metal through the holes in the prepreg backplane.

    Abstract translation: 描述了提供太阳能电池基板加强和电互连的背接触太阳能电池的背板的制造方法和结构。 该方法包括在半导体衬底的背面上沉积基底电极和发射电极的交错图案,将预浸料底板附着到基底电极和发射电极的交错图案上,在预浸料底板上形成孔,其提供对第一层 的导电金属,并且在预浸料背板的背面上沉积第二导电金属层,通过预浸料背板中的孔与第一导电金属层形成电互连。

    SINGLE PASSIVATED CONTACTS FOR BACK CONTACT BACK JUNCTION SOLAR CELLS
    28.
    发明申请
    SINGLE PASSIVATED CONTACTS FOR BACK CONTACT BACK JUNCTION SOLAR CELLS 审中-公开
    单接触式接触器返回接头太阳能电池

    公开(公告)号:US20150236174A1

    公开(公告)日:2015-08-20

    申请号:US14576161

    申请日:2014-12-18

    Applicant: Solexel, Inc.

    CPC classification number: H01L31/022441 H01L31/02167 H01L31/0682 Y02E10/547

    Abstract: Passivated contact structures and fabrication methods for back contact back junction solar cells are provided. According to one example embodiment, a back contact back junction photovoltaic solar cell is described that has a semiconductor light absorbing layer having a front side and a backside having base regions and emitter regions. A passivating dielectric insulating layer is positioned on the base regions. A first level base and emitter metallization contacts the emitter regions and passivating dielectric insulating layer on the base regions. An electrically insulating backplane is positioned on the first level base and emitter metallization. A second level metallization contacts the first level base and emitter metallization through conductive vias in the electrically insulating backplane.

    Abstract translation: 提供了背接触太阳能电池的钝化接触结构和制造方法。 根据一个示例性实施例,描述了具有正面和背面具有基极区域和发射极区域的半导体光吸收层的背面接合光伏太阳能电池。 钝化介电绝缘层位于基极区上。 第一级基极和发射极金属化接触发射极区域并钝化基极区域上的介电绝缘层。 电绝缘背板位于第一级基底和发射极金属化上。 第二级金属化通过电绝缘背板中的导电通孔接触第一级基极和发射极金属化。

    DIELECTRIC-PASSIVATED METAL INSULATOR PHOTOVOLTAIC SOLAR CELLS
    30.
    发明申请
    DIELECTRIC-PASSIVATED METAL INSULATOR PHOTOVOLTAIC SOLAR CELLS 审中-公开
    电介质绝缘金属绝缘子光伏太阳能电池

    公开(公告)号:US20150129030A1

    公开(公告)日:2015-05-14

    申请号:US14538760

    申请日:2014-11-11

    Applicant: Solexel, Inc.

    Abstract: A photovoltaic solar cell is described that, according to one example embodiment, includes a semiconductor light absorbing layer and a dielectric stack on at least one of a front side of the light absorbing layer or a back side of the light absorbing layer. The dielectric stack includes a tunneling dielectric layer being sufficiently thin for charge carriers to tunnel across, and an overlaying dielectric layer being a different material than the overlaying dielectric. The solar cell also includes an electrically conductive contact physically contacting the overlaying dielectric. The electrically conductive contact and the overlaying dielectric together have either a work function suitable for selective collection of electrons that closely matches a conduction band of the light absorbing layer, or a work function suitable for selective collection of holes that closely matches a valence band of the light absorbing layer.

    Abstract translation: 描述了根据一个示例实施例的光伏太阳能电池,在光吸收层的前侧或光吸收层的背面中的至少一个上包括半导体光吸收层和电介质叠层。 电介质堆叠包括隧穿介质层,其电荷载流子足够薄以隧道穿过,覆盖介质层是与覆盖电介质不同的材料。 太阳能电池还包括物理接触覆盖电介质的导电接触。 导电触点和覆盖电介质一起具有适合于选择性收集与光吸收层的导带紧密匹配的电子的功函数,或适合于选择性收集与 光吸收层。

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