WIRELESS POWER TRANSMISSION SYSTEM, AND METHOD OF CONTROLLING TRANSMISSION AND RECEPTION OF RESONANCE POWER
    22.
    发明申请
    WIRELESS POWER TRANSMISSION SYSTEM, AND METHOD OF CONTROLLING TRANSMISSION AND RECEPTION OF RESONANCE POWER 审中-公开
    无线电力传输系统及控制传输和接收谐振功能的方法

    公开(公告)号:US20160099579A1

    公开(公告)日:2016-04-07

    申请号:US14967521

    申请日:2015-12-14

    Abstract: A resonance power transmission system, and a method of controlling transmission and reception of a resonance power are provided. According to one embodiment, a method of controlling resonance power transmission in a resonance power transmitter may include: transmitting resonance power to a resonance power receiver, the resonance power having resonance frequencies which vary with respect to a plurality of time intervals; and receiving, from the resonance power receiver, information regarding the resonance frequency having the highest power transmission efficiency among the resonance frequencies used in the time intervals.

    Abstract translation: 提供谐振电力传输系统和控制谐振电力的发送和接收的方法。 根据一个实施例,一种控制谐振功率发射器中的谐振功率传输的方法可以包括:向谐振功率接收器发送谐振功率,谐振功率具有相对于多个时间间隔变化的谐振频率; 并且从所述谐振电力接收器接收关于在所述时间间隔中使用的谐振频率中具有最高功率传输效率的谐振频率的信息。

    SEMICONDUCTOR LIGHT EMITTING DEVICES
    23.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICES 有权
    半导体发光器件

    公开(公告)号:US20140209956A1

    公开(公告)日:2014-07-31

    申请号:US14152128

    申请日:2014-01-10

    CPC classification number: H01L33/382

    Abstract: In one example embodiment, a semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. The second conductivity-type semiconductor layer and the active layer having at least one contact hole exposing a region of the first conductivity-type semiconductor layer. The semiconductor light emitting device further includes at least one columnar structure disposed in the exposed region of the first conductivity-type semiconductor layer within the at least one contact hole. The semiconductor light emitting device further includes a first electrode disposed on the exposed region of the first conductivity-type semiconductor layer in which the at least one columnar structure is disposed, the first electrode being connected to the first conductivity-type semiconductor layer. The semiconductor light emitting device further includes a second electrode connected to the second conductivity-type semiconductor layer.

    Abstract translation: 在一个示例性实施例中,半导体发光器件包括包括第一导电类型半导体层,有源层和第二导电类型半导体层的发光结构。 所述第二导电型半导体层和所述有源层具有暴露所述第一导电型半导体层的区域的至少一个接触孔。 半导体发光器件还包括设置在至少一个接触孔内的第一导电类型半导体层的暴露区域中的至少一个柱状结构。 半导体发光器件还包括设置在其中设置有至少一个柱状结构的第一导电类型半导体层的暴露区域上的第一电极,第一电极连接到第一导电型半导体层。 半导体发光器件还包括连接到第二导电类型半导体层的第二电极。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    26.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号:US20170077353A1

    公开(公告)日:2017-03-16

    申请号:US15092695

    申请日:2016-04-07

    Abstract: A semiconductor light emitting device includes a semiconductor stack including a first conductive semiconductor layer including a first surface, a second conductive semiconductor layer including a second surface opposite to the first surface, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a through hole disposed through the semiconductor stack. The semiconductor light emitting device further includes a contact layer connected to the first conductive semiconductor layer, disposed in the through hole, and disposed through the semiconductor stack, a first electrode layer connected to the contact layer, and a second electrode layer disposed on the second surface, and including a pad forming portion on which the semiconductor stack is not disposed. The semiconductor light emitting device further includes an insulating layer disposed between the first electrode layer and the second electrode layer, and an electrode pad disposed on the pad forming portion.

    Abstract translation: 一种半导体发光器件包括:半导体堆叠,包括:第一导电半导体层,包括第一表面;第二导电半导体层,包括与第一表面相对的第二表面;有源层,设置在第一导电半导体层和第二导电半导体之间; 层和穿​​过半导体叠层的通孔。 半导体发光器件还包括连接到第一导电半导体层的接触层,设置在通孔中,并且穿过半导体堆叠布置,连接到接触层的第一电极层和设置在第二导电半导体层上的第二电极层 表面,并且包括不设置半导体叠层的焊盘形成部分。 半导体发光器件还包括设置在第一电极层和第二电极层之间的绝缘层和设置在焊盘形成部分上的电极焊盘。

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