公开(公告)号：US20160307776A1

公开(公告)日：2016-10-20

申请号：US15198131

申请日：2016-06-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Mitsuhiro ICHIJO ,  Tetsuhiro TANAKA ,  Seiji YASUMOTO ,  Shun MASHIRO ,  Yoshiaki OIKAWA ,  Kenichi OKAZAKI

IPC: H01L21/44 ,  H01L29/786 ,  H01L29/423 ,  C23C16/30 ,  H01L29/66 ,  H01L29/49 ,  H01L21/67 ,  C23C16/511 ,  H01L29/24 ,  H01L21/02

CPC classification number: H01L21/44 ,  C23C16/308 ,  C23C16/45578 ,  C23C16/511 ,  H01J37/32192 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/34 ,  H01L21/02274 ,  H01L21/0237 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02614 ,  H01L21/02631 ,  H01L21/67167 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

Abstract: It is an object to drive a semiconductor device at high speed or to improve the reliability of the semiconductor device. In a method for manufacturing the semiconductor device, in which a gate electrode is formed over a substrate with an insulating property, a gate insulating film is formed over the gate electrode, and an oxide semiconductor film is formed over the gate insulating film, the gate insulating film is formed by deposition treatment using high-density plasma. Accordingly, dangling bonds in the gate insulating film are reduced and the quality of the interface between the gate insulating film and the oxide semiconductor is improved.

公开(公告)号：US20160028034A1

公开(公告)日：2016-01-28

申请号：US14801331

申请日：2015-07-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji YASUMOTO ,  Masataka SATO ,  Masafumi NOMURA ,  Toshiyuki MIYAMOTO

IPC: H01L51/50 ,  H01L51/00 ,  H01L51/56

CPC classification number: H01L51/003 ,  H01L2251/5338

Abstract: A method for manufacturing a flexible semiconductor device is disclosed. The method includes: forming a separation layer of a metal over a substrate; treating the separation layer with plasma under an atmosphere containing nitrogen, oxygen, silicon, and hydrogen; forming a layer over the plasma-treated separation layer, the layer being capable of supplying hydrogen and nitrogen to the separation layer; forming a functional layer over the separation layer; performing heat treatment to promote the release of hydrogen and nitrogen from the layer; and separating the substrate at the separation layer. The method allows the formation of an extremely thin oxide layer over the separation layer, which facilitates the separation, reduces the probability that the oxide layer remains under the layer, and contributes to the increase in efficiency of a device included in the functional layer.

Abstract translation: 公开了一种用于制造柔性半导体器件的方法。 该方法包括：在衬底上形成金属的分离层; 在含有氮，氧，硅和氢的气氛下用等离子体处理分离层; 在等离子体处理的分离层上形成层，该层能够向分离层供应氢和氮; 在分离层上形成功能层; 进行热处理以促进从该层释放氢和氮; 并在分离层处分离衬底。 该方法允许在分离层上形成极薄的氧化物层，这便于分离，降低了氧化层保留在该层之下的可能性，并且有助于提高包括在功能层中的器件的效率。

公开(公告)号：US20240057378A1

公开(公告)日：2024-02-15

申请号：US18259287

申请日：2021-12-16

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Daiki NAKAMURA ,  Tomoya AOYAMA ,  Yasutaka NAKAZAWA ,  Rai SATO ,  Seiji YASUMOTO ,  Kiyofumi OGINO ,  Takashi SHIRAISHI

IPC: H10K59/12 ,  H10K59/35 ,  H10K59/38

CPC classification number: H10K59/1201 ,  H10K59/35 ,  H10K59/38 ,  H10K71/233

Abstract: A method for fabricating a display device that easily achieves higher resolution is provided. A display device having both high display quality and high resolution is provided. A first EL film is formed over a first pixel electrode and a second pixel electrode; a first sacrificial film is formed to cover the first EL film; the first sacrificial film and the first EL film are etched to expose the second pixel electrode and to form a first EL layer over the first pixel electrode and a first sacrificial layer over the first EL layer; and the first sacrificial layer is removed. The first EL film and the second EL film are etched by dry etching, and the first sacrificial layer is removed by wet etching.

公开(公告)号：US20210175447A1

公开(公告)日：2021-06-10

申请号：US17177457

申请日：2021-02-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masakatsu OHNO ,  Kayo KUMAKURA ,  Hiroyuki WATANABE ,  Seiji YASUMOTO ,  Satoru IDOJIRI ,  Hiroki ADACHI

IPC: H01L51/00 ,  H01L51/52 ,  H01L27/32 ,  H01L27/12 ,  H01L29/786

Abstract: The yield of a separation process is improved. The mass productivity of a display device which is formed through a separation process is improved. A layer is formed over a substrate with use of a material including a resin or a resin precursor. Next, a resin layer is formed by performing heat treatment on the layer. Next, a layer to be separated is formed over the resin layer. Then, the layer to be separated and the substrate are separated from each other. The heat treatment is performed in an atmosphere containing oxygen or while supplying a gas containing oxygen.

公开(公告)号：US20210167212A1

公开(公告)日：2021-06-03

申请号：US17262793

申请日：2019-07-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Kenichi OKAZAKI ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Yasutaka NAKAZAWA ,  Seiji YASUMOTO ,  Shunpei YAMAZAKI

IPC: H01L29/786

Abstract: A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. A semiconductor device with stable electrical characteristics is provided. A semiconductor device includes a first insulating layer, a second insulating layer, a semiconductor layer, and a first conductive layer. The semiconductor layer, the second insulating layer, and the first conductive layer are stacked in this order over the first insulating layer. The second insulating layer has a stacked-layer structure in which a first insulating film, a second insulating film, and a third insulating film are stacked in this order. The first insulating film, the second insulating film, and the third insulating film each contain an oxide. The first insulating film includes a portion in contact with the semiconductor layer. The semiconductor layer contains indium, gallium, and oxygen and includes a region with an indium content percentage higher than a gallium content percentage.

公开(公告)号：US20210026188A1

公开(公告)日：2021-01-28

申请号：US16319649

申请日：2017-05-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masakatsu OHNO ,  Seiji YASUMOTO ,  Naoto GOTO ,  Hiroki ADACHI

IPC: G02F1/1333 ,  G02F1/1362 ,  G02F1/1368

Abstract: A method for manufacturing a display device with low power consumption is provided.
A method for manufacturing a display device includes a step of forming a first layer over a substrate by using a material containing a resin or a resin precursor, a step of forming a first region and a second region thinner than the first region in the first layer, a step of forming a first resin layer including a first region and a second region thinner than the first region by performing first heat treatment on the first layer in a gas containing oxygen, a step of forming, over the first resin layer, a layer to be separated including a display element, and a step of separating the layer to be separated and the substrate from each other. A step of forming a conductive layer over the first resin layer in a position overlapping with the second region is included in the step of forming the layer to be separated. A step of exposing the conductive layer by removing the first resin layer is included after the step of separating the layer to be separated and the substrate from each other.

公开(公告)号：US20180190533A1

公开(公告)日：2018-07-05

申请号：US15909173

申请日：2018-03-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji YASUMOTO ,  Masataka SATO ,  Shingo EGUCHI ,  Kunihiko SUZUKI

IPC: H01L21/683

CPC classification number: H01L21/6836 ,  B32B38/10 ,  H01L21/67132 ,  H01L21/6835 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/50 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2221/68386 ,  Y10T156/1712

Abstract: To improve peelability, yield in a peeling step, and yield in manufacturing a flexible device. A peeling method is employed which includes a first step of forming a peeling layer containing tungsten over a support substrate; a second step of forming, over the peeling layer, a layer to be peeled formed of a stack including a first layer containing silicon oxynitride and a second layer containing silicon nitride in this order and forming an oxide layer containing tungsten oxide between the peeling layer and the layer to be peeled; a third step of forming a compound containing tungsten and nitrogen in the oxide layer by heat treatment; and a fourth step of peeling the peeling layer from the layer to be peeled at the oxide layer.

公开(公告)号：US20180085859A1

公开(公告)日：2018-03-29

申请号：US15707017

申请日：2017-09-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Seiji YASUMOTO ,  Naoto GOTO ,  Satoru IDOJIRI

IPC: B23K26/57 ,  H01L27/12 ,  H01L27/32 ,  G02F1/1362

CPC classification number: B23K26/57 ,  G02F1/136286 ,  G02F2001/13613 ,  G02F2201/44 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1266 ,  H01L27/3276 ,  H01L51/003 ,  H01L2227/326

Abstract: The yield of a manufacturing process of a semiconductor device is increased. The mass productivity of the semiconductor device is increased. The semiconductor device is manufactured by performing a step of performing plasma treatment on a first surface of a substrate; a step of forming a first layer over the first surface with the use of a material containing a resin or a resin precursor; a step of forming a resin layer by performing heat treatment on the first layer; and a step of separating the substrate and the resin layer from each other. In the plasma treatment, the first surface is exposed to an atmosphere containing one or more of hydrogen, oxygen, and water vapor.

公开(公告)号：US20180076401A1

公开(公告)日：2018-03-15

申请号：US15810249

申请日：2017-11-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya SAKUISHI ,  Yutaka UCHIDA ,  Hiroki ADACHI ,  Saki EGUCHI ,  Junpei YANAKA ,  Kayo KUMAKURA ,  Seiji YASUMOTO ,  Kohei YOKOYAMA ,  Akihiro CHIDA

IPC: H01L51/00 ,  B32B37/02 ,  B32B37/10 ,  B32B37/18

CPC classification number: H01L51/0097 ,  B32B7/02 ,  B32B7/06 ,  B32B7/12 ,  B32B15/08 ,  B32B15/18 ,  B32B15/20 ,  B32B17/00 ,  B32B17/06 ,  B32B27/20 ,  B32B27/286 ,  B32B27/30 ,  B32B27/325 ,  B32B27/34 ,  B32B27/36 ,  B32B27/365 ,  B32B37/02 ,  B32B37/10 ,  B32B37/1292 ,  B32B37/18 ,  B32B38/10 ,  B32B2250/05 ,  B32B2255/20 ,  B32B2260/021 ,  B32B2260/046 ,  B32B2264/102 ,  B32B2307/202 ,  B32B2307/40 ,  B32B2307/50 ,  B32B2307/536 ,  B32B2307/558 ,  B32B2310/0843 ,  B32B2315/08 ,  B32B2457/20 ,  H01L51/003 ,  H01L51/5253 ,  H01L2251/5338 ,  Y02E10/549 ,  Y02P70/521

Abstract: A flexible device is provided. The hardness of a bonding layer of the flexible device is set to be higher than Shore D of 70, or preferably higher than or equal to Shore D of 80. The coefficient of expansion of a flexible substrate of the flexible device is set to be less than 58 ppm/° C., or preferably less than or equal to 30 ppm/° C.

公开(公告)号：US20180040647A1

公开(公告)日：2018-02-08

申请号：US15666758

申请日：2017-08-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Seiji YASUMOTO ,  Yuka KOBAYASHI ,  Satoru IDOJIRI

IPC: H01L27/12 ,  H01L21/47 ,  H01L27/32 ,  H01L29/786 ,  H01L21/683 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L27/1266 ,  G02F1/133305 ,  G02F1/133553 ,  G02F1/133603 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2001/133354 ,  G02F2001/13613 ,  G02F2201/44 ,  H01L21/02118 ,  H01L21/02255 ,  H01L21/02282 ,  H01L21/47 ,  H01L21/6835 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/323 ,  H01L27/3232 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/7869 ,  H01L2221/6835 ,  H01L2221/68381 ,  H01L2227/323 ,  H01L2227/326

Abstract: To increase the yield of the separation process. To produce display devices formed through the separation process with higher mass productivity. A first layer is formed using a material including a resin or a resin precursor over a substrate. Then, first heat treatment is performed on the first layer, whereby a first resin layer including a residue of an oxydiphthalic acid is formed. Then, a layer to be separated is formed over the first resin layer. Then, the layer to be separated and the substrate are separated from each other. The first heat treatment is performed in an atmosphere containing oxygen.