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    DISPLAY DEVICE
    24.
    发明申请
    DISPLAY DEVICE 有权
    显示设备

    公开(公告)号：US20150339980A1

    公开(公告)日：2015-11-26

    申请号：US14819594

    申请日：2015-08-06

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Hajime KIMURA ,  Atsushi UMEZAKI ,  Yasunori YOSHIDA ,  Hideaki SHISHIDO ,  Takuya KIMISHIMA ,  Yasuyuki ARAI

    IPC: G09G3/32 ,  G09G3/00 ,  G09G3/20

    CPC classification number: G09G3/3233 ,  G09G3/006 ,  G09G3/20 ,  G09G3/2022 ,  G09G3/3225 ,  G09G2300/0809 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2310/0272 ,  G09G2310/0275 ,  G09G2320/0233 ,  G09G2320/0295 ,  G09G2320/046 ,  G09G2320/048 ,  G09G2330/022 ,  G09G2340/145

    Abstract: In a display element such as an organic EL element, deterioration progresses due to light emission, and emission luminance is lowered even if the same voltage is applied to the display element. Therefore, use over time causes variations in luminance of each pixel, thereby a so-called “image burn-in” phenomenon occurs. Given this factor, the invention provides a display device which can reduce the difference in deterioration of a display element in each pixel and suppress variations in light emission of a display element in a pixel. It is prevented that only a specific pixel has a long accumulated lighting time. For that purpose, a gray scale of a display pattern is changed to prevent the difference in deterioration of display element in pixels from increasing. Alternatively, a specific display pattern is prevented from being fixedly displayed in a specific region. Further alternatively, a pixel lagging behind in deterioration is deteriorated so that the accumulated lighting time of pixels is equal to each other.

    Abstract translation: 在诸如有机EL元件的显示元件中，由于发光而劣化进行，并且即使对显示元件施加相同的电压，发光亮度也降低。 因此，随着时间的推移导致每个像素的亮度变化，从而发生所谓的“图像老化”现象。 鉴于这个因素，本发明提供一种能够减少每个像素中的显示元件的劣化差异并抑制像素中的显示元件的发光变化的显示装置。 防止只有特定像素具有长的累积点亮时间。 为此，改变显示图案的灰度级以防止显示元件在像素中的劣化的差异增加。 或者，防止特定显示图案被固定地显示在特定区域中。 此外，劣化后退的像素劣化，使得像素的累积点亮时间相等。

    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
    25.
    发明申请
    SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20130130447A1

    公开(公告)日：2013-05-23

    申请号：US13748916

    申请日：2013-01-24

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Yasuyuki ARAI

    IPC: H01L29/66

    CPC classification number: H01L29/66068 ,  H01L21/76254 ,  H01L29/0696 ,  H01L29/0882 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7809 ,  H01L29/7824

    Abstract: At least part of a semiconductor layer or a semiconductor substrate includes a semiconductor region having a large energy gap. The semiconductor region having a large energy gap is preferably formed from silicon carbide and is provided in a position at least overlapping with a gate electrode provided with an insulating layer between the semiconductor region and the gate electrode. By making a structure in which the semiconductor region is included in a channel formation region, a dielectric breakdown voltage is improved.

    Abstract translation: 半导体层或半导体衬底的至少一部分包括具有大能隙的半导体区域。 具有大能隙的半导体区域优选由碳化硅形成，并且设置在与半导体区域和栅电极之间设置有绝缘层的栅电极至少重叠的位置。 通过形成半导体区域包括在沟道形成区域中的结构，提高了介电击穿电压。

    DISPLAY DEVICE
    26.
    发明申请
    DISPLAY DEVICE 审中-公开

    公开(公告)号：US20190355303A1

    公开(公告)日：2019-11-21

    申请号：US16434670

    申请日：2019-06-07

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Shunpei YAMAZAKI ,  Hajime KIMURA ,  Atsushi UMEZAKI ,  Yasunori YOSHIDA ,  Hideaki SHISHIDO ,  Takuya KIMISHIMA ,  Yasuyuki ARAI

    IPC: G09G3/3233 ,  G09G3/20 ,  G09G3/00 ,  G09G3/3225

    Abstract: In a display element such as an organic EL element, deterioration progresses due to light emission, and emission luminance is lowered even if the same voltage is applied to the display element. Therefore, use over time causes variations in luminance of each pixel, thereby a so-called “image burn-in” phenomenon occurs. Given this factor, the invention provides a display device which can reduce the difference in deterioration of a display element in each pixel and suppress variations in light emission of a display element in a pixel. It is prevented that only a specific pixel has a long accumulated lighting time. For that purpose, a gray scale of a display pattern is changed to prevent the difference in deterioration of display element in pixels from increasing. Alternatively, a specific display pattern is prevented from being fixedly displayed in a specific region. Further alternatively, a pixel lagging behind in deterioration is deteriorated so that the accumulated lighting time of pixels is equal to each other.

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    29.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20170033129A1

    公开(公告)日：2017-02-02

    申请号：US15292544

    申请日：2016-10-13

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Masahiko HAYAKAWA ,  Yuta MORIYA ,  Junya GOTO ,  Yasuyuki ARAI

    IPC: H01L27/12

    CPC classification number: H01L27/1225 ,  G02F1/1339 ,  G02F1/13454 ,  G02F2001/13606 ,  G02F2001/136231 ,  G09G3/3648 ,  G09G2300/04 ,  H01L27/127 ,  H01L2224/05572 ,  H01L2924/00014 ,  H01L2224/05552

    Abstract: The number of photolithography steps used for manufacturing a transistor is reduced to less than the conventional one and a highly reliable semiconductor device is provided. The present invention relates to a semiconductor device including a circuit including a transistor having an oxide semiconductor layer over a first substrate and a second substrate fixed to the first substrate with a sealant. A closed space surrounded by the sealant, the first substrate, and the second substrate is in a reduced pressure state or filled with dry air. The sealant surrounds at least the transistor and has a closed pattern shape. Further, the circuit is a driver circuit including a transistor having an oxide semiconductor layer.

    Abstract translation: 用于制造晶体管的光刻步骤的数量减少到比常规光刻步骤的数量少，并且提供了高度可靠的半导体器件。 本发明涉及一种包括电路的半导体器件，该电路包括在第一衬底上具有氧化物半导体层的晶体管，以及用密封剂固定到第一衬底的第二衬底。 由密封剂，第一基材和第二基材包围的封闭空间处于减压状态或填充有干燥空气。 密封剂至少围绕晶体管并且具有封闭的图案形状。 此外，电路是包括具有氧化物半导体层的晶体管的驱动器电路。

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