公开(公告)号：US06995396B2

公开(公告)日：2006-02-07

申请号：US10279119

申请日：2002-10-24

申请人： Kunimasa Takahashi ,  Masao Uchida ,  Makoto Kitabatake ,  Toshiya Yokogawa ,  Osamu Kusumoto ,  Kenya Yamashita ,  Ryoko Miyanaga

发明人： Kunimasa Takahashi ,  Masao Uchida ,  Makoto Kitabatake ,  Toshiya Yokogawa ,  Osamu Kusumoto ,  Kenya Yamashita ,  Ryoko Miyanaga

IPC分类号： H01L31/0312 ,  H01L29/80 ,  H01L31/112 ,  H01L29/76 ,  H01L27/095

CPC分类号： H01L29/365 ,  C30B25/02 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02584 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/0445 ,  H01L29/0657 ,  H01L29/1608 ,  H01L29/66068

摘要： A SiC bulk substrate whose top face has been flattened is placed in a vertical thin film growth system to be annealed in an inert gas atmosphere. A material gas of Si is then supplied at a flow rate of 1 mL/min. at a substrate temperature of 1200° C. through 1600° C. Subsequently, the diluent gas is changed to a hydrogen gas at a temperature of 1600° C., and material gases of Si and carbon are supplied with nitrogen intermittently supplied, so as to deposit SiC thin films on the SiC bulk substrate. In a flat δ-doped multilayered structure thus formed, an average height of macro steps formed on the top face and on interfaces therein is 30 nm or less. When the resultant substrate is used, a semiconductor device with a high breakdown voltage and high mobility can be realized.

公开(公告)号：US06940127B2

公开(公告)日：2005-09-06

申请号：US10631086

申请日：2003-07-31

申请人： Toshiya Yokogawa ,  Kunimasa Takahashi ,  Masao Uchida ,  Makoto Kitabatake ,  Osamu Kusumoto

发明人： Toshiya Yokogawa ,  Kunimasa Takahashi ,  Masao Uchida ,  Makoto Kitabatake ,  Osamu Kusumoto

IPC分类号： H01L21/82 ,  H01L27/06 ,  H01L29/10 ,  H01L29/15 ,  H01L29/24 ,  H01L29/36 ,  H01L29/772 ,  H01L29/812 ,  H01L29/872 ,  H03D7/12 ,  H03F3/60 ,  H01L29/76

CPC分类号： H03F3/601 ,  H01L21/8213 ,  H01L27/0605 ,  H01L29/105 ,  H01L29/157 ,  H01L29/1608 ,  H01L29/365 ,  H01L29/7725 ,  H01L29/812 ,  H01L29/872 ,  H03D7/125 ,  H03F2200/294

摘要： Equipment for a communication system has a semiconductor device formed by integrating a Schottky diode, a MOSFET, a capacitor, and an inductor in a SiC substrate. The SiC substrate has a first multilayer portion and a second multilayer portion provided upwardly in this order. The first multilayer portion is composed of δ-doped layers each containing an n-type impurity (nitrogen) at a high concentration and undoped layers which are alternately stacked. The second multilayer portion is composed of δ-doped layers each containing a p-type impurity (aluminum) at a high concentration and undoped layers which are alternately stacked. Carriers in the δ-doped layers spread out extensively to the undoped layers. Because of a low impurity concentration in each of the undoped layers, scattering by impurity ions is reduced so that a low resistance and a high breakdown voltage are obtained.

摘要翻译： 用于通信系统的设备具有通过将肖特基二极管，MOSFET，电容器和电感器集成在SiC衬底中而形成的半导体器件。 SiC衬底具有依次向上设置的第一多层部分和第二多层部分。 第一多层部分由各自含有高浓度的n型杂质（氮）和交替层叠的未掺杂层的δ掺杂层组成。 第二多层部分由各自含有高浓度的p型杂质（铝）和交替层叠的未掺杂层的δ掺杂层组成。 δ掺杂层中的载体广泛扩展到未掺杂的层。 由于每个未掺杂的层中的杂质浓度低，所以杂质离子的散射被降低，从而获得低的电阻和高的击穿电压。

公开(公告)号：US06692327B1

公开(公告)日：2004-02-17

申请号：US09480415

申请日：2000-01-11

申请人： Masahiro Deguchi ,  Makoto Kitabatake ,  Kanji Imai ,  Tomohiro Sekiguchi ,  Hideo Kurokawa ,  Keisuke Koga ,  Tetsuya Shiratori ,  Toru Kawase

发明人： Masahiro Deguchi ,  Makoto Kitabatake ,  Kanji Imai ,  Tomohiro Sekiguchi ,  Hideo Kurokawa ,  Keisuke Koga ,  Tetsuya Shiratori ,  Toru Kawase

IPC分类号： H01J902

CPC分类号： H01J9/025 ,  H01J1/304 ,  H01J2201/30446

摘要： An electron emission element includes a substrate, a cathode electrode formed on the substrate, an anode electrode disposed so as to be opposed to the cathode electrode, an electron emission member disposed on the cathode electrode, a control electrode disposed between the cathode electrode and the anode electrode, and an insulating layer. The electron emission member includes a first member having a hole and a second member filling the hole, wherein the second member is more likely to emit electrons than the first member.

摘要翻译： 电子发射元件包括基板，形成在基板上的阴极电极，与阴极相对设置的阳极电极，设置在阴极电极上的电子发射部件，设置在阴极电极和阴极电极之间的控制电极， 阳极电极和绝缘层。 电子发射构件包括具有孔的第一构件和填充孔的第二构件，其中第二构件比第一构件更可能发射电子。

公开(公告)号：US06504176B2

公开(公告)日：2003-01-07

申请号：US09824922

申请日：2001-04-03

申请人： Makoto Kitabatake ,  Toshiya Yokogawa ,  Osamu Kusumoto ,  Masao Uchida ,  Kunimasa Takahashi

发明人： Makoto Kitabatake ,  Toshiya Yokogawa ,  Osamu Kusumoto ,  Masao Uchida ,  Kunimasa Takahashi

IPC分类号： H01L310317

CPC分类号： H01L29/0634 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/20 ,  H01L29/66068 ,  H01L29/66712 ,  H01L29/7802 ,  H01L29/7813

摘要： There are provided a field effect transistor with a high withstand voltage and low loss and a method of manufacturing the same. The field effect transistor includes an n-type substrate, an n-type semiconductor layer formed on the n-type substrate, a p-type semiconductor layer formed on the n-type semiconductor layer, a p-type region embedded in the n-type semiconductor layer, an n-type region embedded in the n-type semiconductor layer and the p-type semiconductor layer, an n-type source region disposed in the p-type semiconductor layer on its surface side, an insulating layer disposed on the p-type semiconductor layer, a gate electrode disposed on the insulating layer, a source electrode, and a drain electrode. The n-type semiconductor layer, the p-type semiconductor layer, and the p-type region are made of wide-gap semiconductors with a bandgap of at least 2 eV, respectively.

摘要翻译： 提供具有高耐受电压和低损耗的场效应晶体管及其制造方法。 场效应晶体管包括n型衬底，形成在n型衬底上的n型半导体层，形成在n型半导体层上的p型半导体层，嵌入在n型衬底中的p型区域， 埋入n型半导体层和p型半导体层的n型区域，在其表面侧配置在p型半导体层中的n型源极区域，设置在p型半导体层上的绝缘层 p型半导体层，设置在绝缘层上的栅电极，源电极和漏电极。 n型半导体层，p型半导体层和p型区域分别由具有至少2eV的带隙的宽间隙半导体制成。

公开(公告)号：US06350999B1

公开(公告)日：2002-02-26

申请号：US09449525

申请日：1999-11-29

申请人： Takeshi Uenoyama ,  Takao Tohda ,  Masahiro Deguchi ,  Makoto Kitabatake ,  Kentaro Setsune

发明人： Takeshi Uenoyama ,  Takao Tohda ,  Masahiro Deguchi ,  Makoto Kitabatake ,  Kentaro Setsune

IPC分类号： H01L310328

CPC分类号： H01J1/308

摘要： In an electron-emitting device, an electron supplying layer for supplying electrons is composed of an n-GaN layer. An electron transferring layer for moving electrons toward the surface is composed of non-doped (intrinsic) AlxGa1−xN (0≦x≦1) having a graded composition for the Al concentration x. A surface layer is composed of non-doped AlN having a negative electron affinity (NEA). The electron transferring layer composed of AlxGa1−xN has a band gap which is enlarged nearly continuously from the electron supplying layer to the surface layer and a negative electron affinity or a positive electron affinity close to zero. If such a voltage V as to render the surface electrode side positive is applied, the band of AlxGa1−xN is bent, whereby a current derived mainly from a diffused current flows from the electron supplying layer to the surface layer through the electron transferring layer. Thereby excellent electron emitting characteristic is obtained.

摘要翻译： 在电子发射器件中，用于提供电子的电子供应层由n-GaN层组成。 用于向表面移动电子的电子转移层由具有Al浓度x的梯度组成的非掺杂（本征）Al x Ga 1-x N（0 <= x <= 1）组成。 表面层由具有负电子亲和力（NEA）的非掺杂AlN组成。 由Al x Ga 1-x N组成的电子转移层具有从电子供给层到表面层几乎连续扩大的带隙，接近零的负电子亲和力或正电子亲和力。 如果施加使表面电极侧为正的电压V，则Al x Ga 1-x N的带被弯曲，主要由扩散电流导出的电流从电子供给层通过电子转移层流向表面层。 由此获得优异的电子发射特性。

公开(公告)号：US06273950B1

公开(公告)日：2001-08-14

申请号：US09753412

申请日：2001-01-02

申请人： Makoto Kitabatake

发明人： Makoto Kitabatake

IPC分类号： C30B2502

CPC分类号： H01L29/872 ,  C30B29/36 ,  C30B33/00 ,  H01L21/0445 ,  H01L21/0475 ,  H01L21/0485 ,  H01L21/0495 ,  H01L29/1608 ,  H01L29/267 ,  H01L29/45 ,  H01L29/47

摘要： A method for manufacturing a device of silicon carbide (SiC) and a single crystal thin film, which are wide band gap semiconductor materials and can be applied to semiconductor devices such as high power devices, high temperature devices, and environmentally resistant devices, is provided by heating a silicon carbide crystal in an oxygen atmosphere to form a silicon (di)oxide thin film on a silicon carbide crystal surface, and etching the silicon (di)oxide thin film formed on the silicon carbide crystal surface to prepare a clean SiC surface. The above SiC device comprises a clean surface having patterned steps and terraces, has a surface defect density of 108 cm−2 or less, or has at least a layered structure in which an n-type silicon carbide crystal is formed on an n-type Si substrate surface.

摘要翻译： 提供了一种制造宽带隙半导体材料的碳化硅（SiC）和单晶薄膜的器件的方法，可以应用于诸如大功率器件，高温器件和耐环境器件的半导体器件 通过在氧气氛中加热碳化硅晶体以在碳化硅晶体表面上形成硅（di）氧化物薄膜，并蚀刻形成在碳化硅晶体表面上的硅（di）氧化物薄膜，以制备清洁的SiC表面 。 上述SiC器件包括具有图案化台阶和台阶的清洁表面，其表面缺陷密度为108cm -2以下，或至少具有在n型上形成n型碳化硅晶体的层状结构 Si衬底表面。

公开(公告)号：US5814194A

公开(公告)日：1998-09-29

申请号：US542008

申请日：1995-10-12

申请人： Masahiro Deguchi ,  Akihisa Yoshida ,  Makoto Kitabatake ,  Takashi Hirao

发明人： Masahiro Deguchi ,  Akihisa Yoshida ,  Makoto Kitabatake ,  Takashi Hirao

IPC分类号： C30B33/00 ,  C30B33/12

CPC分类号： C30B33/00 ,  C30B29/04 ,  H01J2237/0812 ,  Y10T428/24355 ,  Y10T428/24479 ,  Y10T428/30

摘要： Cluster particles including a plurality of molecules or atoms are prepared by a gas cluster method, are accelerated, and are then irradiated onto a diamond in a low pressure atmosphere, so that the unevenness surfaces of the diamond are smoothed with no damages in the diamond. The cluster particles are prepared by the steps of forming, ionizing, mass-separating, and accelerating cluster particles. The cluster particles with a certain energy are irradiated onto the surface of the diamond. Irradiated cluster particles collide with the surface of the diamond, and then break apart into each molecule or atom while changing momentum (direction and speed) or energy. Thus, the surface of the diamond is efficiently smoothed and etched.

摘要翻译： 包含多个分子或原子的簇粒子通过气体簇法制备，被加速，然后在低压气氛中照射到金刚石上，使得金刚石的不平坦表面在金刚石中没有损坏的情况下被平滑化。 通过形成，离子化，质量分离和加速簇粒子的步骤制备簇粒子。 具有一定能量的簇粒子被照射到金刚石的表面上。 辐照的簇粒子与金刚石的表面碰撞，然后在改变动量（方向和速度）或能量的同时分解成每个分子或原子。 因此，金刚石的表面被有效地平滑和蚀刻。

公开(公告)号：US5605860A

公开(公告)日：1997-02-25

申请号：US374207

申请日：1995-01-18

申请人： Tetuo Kawasaki ,  Tetuhiro Koretika ,  Makoto Kitabatake ,  Takasi Hirao

发明人： Tetuo Kawasaki ,  Tetuhiro Koretika ,  Makoto Kitabatake ,  Takasi Hirao

IPC分类号： H01L21/20 ,  H01L43/06 ,  H01L43/08

CPC分类号： H01L43/08 ,  H01L21/02381 ,  H01L21/02466 ,  H01L21/02502 ,  H01L21/02549 ,  H01L21/02631 ,  H01L43/065 ,  Y10S438/974

摘要： A method of fabricating a semiconductor thin film is initiated with preparing a substrate having a surface consisting of a single crystal of Si. The surface has an oxide film. Then, the oxide film is removed. The dangling bonds of the Si atoms on the surface are terminated with hydrogen atoms. An initial layer is formed on the substrate of the single crystal of Si terminated with the hydrogen atoms, of at least one selected from the group consisting of Al, Ga, and In. A buffer layer containing at least In and Sb is formed on the initial layer. A semiconductor thin film containing at least In and Sb is formed on the buffer layer at a temperature higher than the temperature at which the buffer layer is started to be formed. There is also disclosed a method of fabricating a Hall-effect device. This method is initiated with forming a semiconductor thin film by making use of the above-described fabrication method. Then, electrodes are attached to the thin film.

摘要翻译： 通过制备具有由Si的单晶组成的表面的衬底来开始制造半导体薄膜的方法。 该表面具有氧化膜。 然后，除去氧化膜。 表面上的Si原子的悬挂键用氢原子终止。 在由Al，Ga和In组成的组中选出的至少一种的氢原子的单结晶的基板上形成初始层。 在初始层上形成至少含有In和Sb的缓冲层。 至少含有In和Sb的半导体薄膜在高于开始形成缓冲层的温度的温度下形成在缓冲层上。 还公开了一种制造霍尔效应器件的方法。 通过利用上述制造方法形成半导体薄膜来开始该方法。 然后，电极附着在薄膜上。

公开(公告)号：US07671409B2

公开(公告)日：2010-03-02

申请号：US11570269

申请日：2005-06-10

申请人： Makoto Kitabatake ,  Osamu Kusumoto ,  Masao Uchida ,  Kunimasa Takahashi ,  Kenya Yamashita ,  Koichi Hashimoto

发明人： Makoto Kitabatake ,  Osamu Kusumoto ,  Masao Uchida ,  Kunimasa Takahashi ,  Kenya Yamashita ,  Koichi Hashimoto

IPC分类号： H01L29/24

CPC分类号： H01L29/7828 ,  H01L29/0696 ,  H01L29/0847 ,  H01L29/105 ,  H01L29/1608 ,  H01L29/365

摘要： A field-effect transistor power device includes a source electrode, a drain electrode, a wide gap semiconductor including a channel region and a drift region, the channel region and the drift region forming a series current path between the source electrode and the drain electrode, a gate insulating film that covers the channel region, and a gate electrode formed on the gate insulating film. In the series current path which is electrically conducting when the field-effect transistor power device is in an ON state, any region other than the channel region has an ON resistance exhibiting a positive temperature dependence, and the channel region has an ON resistance exhibiting a negative temperature dependence. A ratio ΔRon/Ron(−30° C.) is 50% or less.

摘要翻译： 场效晶体管功率器件包括源电极，漏电极，包括沟道区和漂移区的宽间隙半导体，沟道区和漂移区在源电极和漏电极之间形成串联电流路径， 覆盖沟道区的栅极绝缘膜和形成在栅极绝缘膜上的栅电极。 在场效应晶体管功率器件处于导通状态时导通的串联电流路径中，通道区域以外的任何区域具有呈现正温度依赖性的导通电阻，并且沟道区域具有呈现出导通电阻 负温度依赖性。 比率＆Dgr; Ron / Ron（-30℃）为50％以下。

公开(公告)号：US20090309215A1

公开(公告)日：2009-12-17

申请号：US12373024

申请日：2007-09-13

申请人： Makoto Kitabatake

发明人： Makoto Kitabatake

IPC分类号： H01L23/34 ,  H01L21/00

CPC分类号： H01L23/3672 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13062 ,  H01L2924/13063 ,  H01L2924/13091 ,  H01L2924/15312 ,  H01L2924/19041 ,  H01L2924/19107 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor module (10) includes a heat sink (1), an electronic component (2), a semiconductor device (3), and a thermally-conductive sheet member (4). The thermally-conductive sheet member (4) covers a part of the semiconductor device (3) and has a lower part (4b) and a side part (4c). The lower part (4b) is in contact with a mounting face (11a) of the heat sink (1). The side part (4c) extends from the lower part (4b) and covers a first side surface (3c) of the semiconductor device (3). The electronic component (2) is disposed across the side part (4c) of the thermally-conductive sheet member (4) from the semiconductor device (3).

摘要翻译： 半导体模块（10）包括散热器（1），电子部件（2），半导体器件（3）和导热片部件（4）。 导热片部件（4）覆盖半导体器件（3）的一部分并且具有下部（4b）和侧部（4c）。 下部（4b）与散热片（1）的安装面（11a）接触。 侧部（4c）从下部（4b）延伸并覆盖半导体器件（3）的第一侧表面（3c）。 电子部件（2）从半导体器件（3）横跨导热片部件（4）的侧部（4c）。