公开(公告)号：US08872330B2

公开(公告)日：2014-10-28

申请号：US12376425

申请日：2007-07-16

Applicant: Siegfried Herrmann ,  Berthold Hahn

Inventor： Siegfried Herrmann ,  Berthold Hahn

IPC: H01L23/367 ,  H01L33/64 ,  H01L33/00 ,  H01L33/62 ,  H01L27/15 ,  H01L33/38

CPC classification number: H01L33/0079 ,  H01L27/15 ,  H01L33/385 ,  H01L33/54 ,  H01L33/62 ,  H01L33/642 ,  H01L33/647 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A thin-film semiconductor component having a carrier layer and a layer stack which is arranged on the carrier layer, the layer stack containing a semiconductor material and being provided for emitting radiation, wherein a heat dissipating layer provided for cooling the semiconductor component is applied on the carrier layer. A component assembly is also disclosed.

Abstract translation: 一种具有载体层和层叠体的薄膜半导体部件，其布置在载体层上，所述层叠体包含半导体材料并被设置用于发射辐射，其中设置用于冷却半导体部件的散热层被施加到 载体层。 还公开了一种组件组件。

公开(公告)号：US08648357B2

公开(公告)日：2014-02-11

申请号：US12747459

申请日：2008-12-03

Applicant: Siegfried Herrmann

Inventor： Siegfried Herrmann

IPC: H01L27/15

CPC classification number: H01L27/15 ,  H01L25/0756 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A radiation-emitting device includes a first active semiconductor layer embodied for the emission of electromagnetic radiation and for direct contact with connection electrodes, and a second active semiconductor layer embodied for the emission of electromagnetic radiation and for direct contact with connection electrodes. The first active semiconductor layer and the second active semiconductor layer are arranged in a manner stacked one above another.

Abstract translation: 辐射发射器件包括实现用于发射电磁辐射并用于与连接电极直接接触的第一有源半导体层以及用于发射电磁辐射并用于与连接电极直接接触的第二有源半导体层。 第一有源半导体层和第二有源半导体层以彼此层叠的方式排列。

公开(公告)号：US20130274910A1

公开(公告)日：2013-10-17

申请号：US13565255

申请日：2012-08-02

Applicant: Willi Weingarten ,  Siegfried Herrmann

Inventor： Willi Weingarten ,  Siegfried Herrmann

IPC: G05B19/418

CPC classification number: G05B19/4183 ,  B21C37/06 ,  B21C51/00

Abstract: A method for controlling a production facility using high-resolution location tracking of workpieces includes determining the current position of the start of the workpiece and the end of the workpiece being currently transported through the facility using position sensors and interposed displacement sensors arranged at different positions of the production facility, and measuring a length of the workpiece from a combination of at least two position sensors and at least one interposed displacement sensor or of at least two displacement sensors and at least one interposed position sensor. The physically determined positions at the various position sensors are compared with a nominal position of the workpiece calculated from the obtained measurement data, and a message is displayed and/or a test is terminated and/or the production facility is stopped when the physically determined positions exceed deviation limit values.

Abstract translation: 用于使用工件的高分辨率位置跟踪来控制生产设备的方法包括：使用位置传感器确定当前工件起始位置和当前通过设施传送的工件的端部，以及布置在位置传感器 以及从至少两个位置传感器和至少一个插入位移传感器或至少两个位移传感器和至少一个插入位置传感器的组合测量工件的长度。 将各个位置传感器处的物理确定的位置与从获得的测量数据计算的工件的标称位置进行比较，并且当物理确定的位置显示和/或测试终止和/或停止生产设备 超过偏差极限值。

公开(公告)号：US08552459B2

公开(公告)日：2013-10-08

申请号：US13129018

申请日：2009-11-05

Applicant: Siegfried Herrmann ,  Sebastian Taeger

Inventor： Siegfried Herrmann ,  Sebastian Taeger

IPC: H01L33/00 ,  H01L29/08

CPC classification number: H01L33/44 ,  C08G61/02 ,  H01L24/24 ,  H01L24/82 ,  H01L33/62 ,  H01L2224/24051 ,  H01L2924/01327 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/00

Abstract: A radiation-emitting component includes a carrier, a semi-conductor chip arranged on the carrier, wherein the semi-conductor chip includes an active layer to generate electromagnetic radiation and a radiation exit surface, a first and a second contact structure for the electrical contacting of the semi-conductor chip, a first and a second contact layer, wherein the semi-conductor chip is electrically conductively connected to the first contact structure via the first contact layer and to the second contact structure via the second contact layer, a passivation layer arranged on the semi-conductor chip.

Abstract translation: 辐射发射部件包括载体，布置在载体上的半导体芯片，其中半导体芯片包括产生电磁辐射的有源层和辐射出射表面，用于电接触的第一和第二接触结构 所述半导体芯片具有第一和第二接触层，其中所述半导体芯片经由所述第一接触层和所述第二接触结构经由所述第二接触层导电地连接到所述第一接触结构，钝化层 布置在半导体芯片上。

公开(公告)号：US20130240918A1

公开(公告)日：2013-09-19

申请号：US13823726

申请日：2011-07-27

Applicant: Siegfried Herrmann ,  Helmut Fischer

Inventor： Siegfried Herrmann ,  Helmut Fischer

IPC: H01L33/62 ,  H01L33/48

CPC classification number: H01L33/62 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/48 ,  H01L33/486 ,  H01L33/647 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/01068 ,  H01L2933/0016 ,  H01S5/0217 ,  H01S5/02256 ,  H01L2924/00014

Abstract: The invention relates to an optoelectronic seminconductor component, comprising a substrate-free optoelectronic semiconductor chip (1), which has a first main surface (1a) on an upper face and a second main surface (1b) on a lower face, and a metal carrier (2), which is arranged on the lower face of the optoelectronic seminconductor chip (1), wherein the metal carrier (2) protrudes over the optoelectronic semiconductor chip (1) in at least one lateral direction (1) and the metal carrier (2) is deposited on the second main surface (1b) of the optoelectronic semiconductor chip (1) using a galvanic or electroless plating method.

Abstract translation: 本发明涉及一种光电半导体元件，它包括一个无衬底的光电半导体芯片（1），它在上表面上具有第一主表面（1a），在下表面上具有第二主表面（1b） 载体（2），其布置在光电半导体芯片（1）的下表面上，其中金属载体（2）在至少一个横向方向（1）上突出超过光电半导体芯片（1），并且金属载体 （2）使用电镀或无电镀方法沉积在光电半导体芯片（1）的第二主表面（1b）上。

公开(公告)号：US20120248492A1

公开(公告)日：2012-10-04

申请号：US13499622

申请日：2010-08-31

Applicant: Klaus Müller ,  Günter Spath ,  Siegfried Herrmann ,  Ewald Karl Michael Günther ,  Herbert Brunner

Inventor： Klaus Müller ,  Günter Spath ,  Siegfried Herrmann ,  Ewald Karl Michael Günther ,  Herbert Brunner

IPC: H01L33/62 ,  H01L33/52 ,  H01L31/18 ,  H01L31/0203

CPC classification number: H01L31/0224 ,  H01L25/0753 ,  H01L25/167 ,  H01L33/0079 ,  H01L33/486 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/4554

Abstract: The invention relates to an optoelectronic component, having —a carrier (1) comprising a first main surface (Ia), —at least one optoelectronic semiconductor chip (2) having no substrate, and —a contact metallization (3a, 3b), wherein —the carrier (1) is electrically insulating, —the at least one optoelectronic semiconductor chip (2) is fastened to the first main surface (Ia) of the carrier (1) by means of a bonding material (4), particularly a solder material, —the contact metallization (3a, 3b) covers at least one area of the first main surface (Ia) free of the optoelectronic semiconductor chip (2), and —the contact metallization (3a, 3b) is electrically conductively connected to the optoelectronic semiconductor chip (2).

Abstract translation: 本发明涉及一种具有载体（1）的光电子部件，载体（1）包括第一主表面（Ia）， - 至少一个不具有基板的光电子半导体芯片（2）和 - 接触金属化（3a，3b），其中 - 载体（1）是电绝缘的， - 至少一个光电子半导体芯片（2）通过接合材料（4）紧固到载体（1）的第一主表面（1a），特别是焊料 材料， - 接触金属化（3a，3b）覆盖不含光电子半导体芯片（2）的第一主表面（1a）的至少一个区域，并且接触金属化层（3a，3b）导电地连接到 光电半导体芯片（2）。

公开(公告)号：US20110089812A1

公开(公告)日：2011-04-21

申请号：US12922180

申请日：2009-06-17

Applicant: Siegfried Herrmann

Inventor： Siegfried Herrmann

IPC: H01J1/62 ,  H05K13/00

CPC classification number: H01L33/62 ,  H01L33/32 ,  H01L33/385 ,  H01L2924/0002 ,  Y10T29/49002 ,  H01L2924/00

Abstract: An electroluminescent device includes an inorganic luminescence diode chip having a radiation exit area, a plurality of contact webs provided to spread current and arranged on the radiation exit area, and a contact structure arranged outside the radiation exit area and electrically conductively connected to contact webs.

Abstract translation: 电致发光器件包括具有辐射出射区域的无机发光二极管芯片，设置用于扩散电流并布置在辐射出射区域上的多个接触腹板，以及布置在辐射出口区域外部并且电连接到接触腹板的接触结构。

公开(公告)号：US20100133564A1

公开(公告)日：2010-06-03

申请号：US11990099

申请日：2006-08-04

Applicant: Siegfried Herrmann ,  Berthold Hahn

Inventor： Siegfried Herrmann ,  Berthold Hahn

IPC: H01L33/00 ,  H01L21/20 ,  H01L29/02 ,  H01L21/30

CPC classification number: H01L21/6835 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L33/0079 ,  H01L2221/68363 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/12036 ,  H01L2924/181 ,  Y02P20/582 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012

Abstract: The invention relates to a method for producing semiconductor components, wherein a layer composite (6) containing a semiconductor material is formed on a growth substrate (1), a flexible carrier layer is applied to the layer composite (6), the flexible carrier layer is cured to form a self-supporting carrier layer (2), and the growth substrate (1) is stripped away. As an alternative, the carrier layer (2) may have a base layer (2b) and an adhesion layer (2a) adhering on the layer composite.

Abstract translation: 本发明涉及一种生产半导体元件的方法，其中在生长衬底（1）上形成含有半导体材料的复合层（6），将柔性载体层施加到复合层（6）上，柔性载体层 固化以形成自支撑载体层（2），剥离生长衬底（1）。 作为替代，载体层（2）可以具有粘附在层复合物上的基底层（2b）和粘附层（2a）。

公开(公告)号：US09076898B2

公开(公告)日：2015-07-07

申请号：US14002109

申请日：2012-01-23

Applicant: Siegfried Herrmann ,  Stefan Illek

Inventor： Siegfried Herrmann ,  Stefan Illek

IPC: H01L31/00 ,  H01L33/00 ,  H01L31/02 ,  H01L33/38 ,  H01L33/48 ,  H01L33/62 ,  H05K1/02 ,  H05K1/03 ,  H05K1/11 ,  H05K3/34 ,  H05K1/05

CPC classification number: H01L31/02002 ,  H01L31/02005 ,  H01L33/382 ,  H01L33/486 ,  H01L33/62 ,  H01L2924/0002 ,  H05K1/0203 ,  H05K1/0306 ,  H05K1/05 ,  H05K1/11 ,  H05K1/113 ,  H05K3/3436 ,  H05K2201/09781 ,  H05K2201/09845 ,  H05K2201/10106 ,  H05K2201/10121 ,  H01L2924/00

Abstract: A carrier (1) for an optoelectronic structure (2) is specified, wherein in places an electrically insulating passivation material (16) is arranged between an electrically conductive layer (14) of the carrier (1) and a carrier-side connecting means layer (15). Furthermore, an optoelectronic semiconductor chip comprising such a carrier and an optoelectronic structure (2) is specified, said structure being electrically conductively and mechanically connected to the carrier (1) by means of the carrier-side connecting means layer (15).

Abstract translation: 指定用于光电结构（2）的载体（1），其中在载体（1）的导电层（14）之间布置有电绝缘钝化材料（16）和载体侧连接装置层 （15）。 此外，规定了包括这种载体和光电结构（2）的光电子半导体芯片，所述结构通过载体侧连接装置层（15）导电地和机械地连接到载体（1）。

公开(公告)号：US08853732B2

公开(公告)日：2014-10-07

申请号：US13499622

申请日：2010-08-31

Applicant: Klaus Müller ,  Günter Spath ,  Siegfried Herrmann ,  Ewald Karl Michael Günther ,  Herbert Brunner

Inventor： Klaus Müller ,  Günter Spath ,  Siegfried Herrmann ,  Ewald Karl Michael Günther ,  Herbert Brunner

IPC: H01L33/62 ,  H01L31/0224

CPC classification number: H01L31/0224 ,  H01L25/0753 ,  H01L25/167 ,  H01L33/0079 ,  H01L33/486 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/4554

Abstract: The invention relates to an optoelectronic component, having —a carrier (1) comprising a first main surface (Ia), —at least one optoelectronic semiconductor chip (2) having no substrate, and —a contact metallization (3a, 3b), wherein —the carrier (1) is electrically insulating, —the at least one optoelectronic semiconductor chip (2) is fastened to the first main surface (Ia) of the carrier (1) by means of a bonding material (4), particularly a solder material, —the contact metallization (3a, 3b) covers at least one area of the first main surface (Ia) free of the optoelectronic semiconductor chip (2), and —the contact metallization (3a, 3b) is electrically conductively connected to the optoelectronic semiconductor chip (2).

Abstract translation: 本发明涉及一种具有载体（1）的光电子部件，载体（1）包括第一主表面（Ia）， - 至少一个不具有基板的光电子半导体芯片（2）和 - 接触金属化（3a，3b），其中 - 载体（1）是电绝缘的， - 至少一个光电子半导体芯片（2）通过接合材料（4）紧固到载体（1）的第一主表面（1a），特别是焊料 材料， - 接触金属化（3a，3b）覆盖不含光电子半导体芯片（2）的第一主表面（1a）的至少一个区域，并且接触金属化层（3a，3b）导电地连接到 光电半导体芯片（2）。