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    Semiconductor integrated circuit switch matrix
    22.
    发明授权
    Semiconductor integrated circuit switch matrix 有权
    半导体集成电路开关矩阵

    公开(公告)号：US08551830B2

    公开(公告)日：2013-10-08

    申请号：US12110800

    申请日：2008-04-28

    申请人： Tadahiro Ohmi ,  Koji Kotani ,  Kazuyuki Maruo ,  Takahiro Yamaguchi

    发明人： Tadahiro Ohmi ,  Koji Kotani ,  Kazuyuki Maruo ,  Takahiro Yamaguchi

    IPC分类号： H01L21/336 ,  H01L21/8234

    CPC分类号： H01L27/12 ,  H01L21/8221 ,  H01L27/0688 ,  Y10S257/903

    摘要： There is provided a small-type semiconductor integrated circuit whose circuit area is small and whose wiring length is short. The semiconductor integrated circuit is constructed in a multi-layer structure and is provided with a first semiconductor layer, a first semiconductor layer transistor formed in the first semiconductor layer, a wiring layer which is deposited on the first semiconductor layer and in which metal wires are formed, a second semiconductor layer deposited on the wiring layer and a second semiconductor layer transistor formed in the second semiconductor layer. It is noted that insulation of a gate insulating film of the first semiconductor layer transistor is almost equal with that of a gate insulating film of the second semiconductor layer transistor and the gate insulating film of the second semiconductor layer transistor is formed by means of radical oxidation or radical nitridation.

    摘要翻译： 提供电路面积小，布线长度短的小型半导体集成电路。 半导体集成电路构造为多层结构，并且设置有第一半导体层，形成在第一半导体层中的第一半导体层晶体管，布置在第一半导体层上并且其中金属线为 形成，沉积在布线层上的第二半导体层和形成在第二半导体层中的第二半导体层晶体管。 注意，第一半导体层晶体管的栅极绝缘膜的绝缘几乎等于第二半导体层晶体管的栅极绝缘膜的绝缘，并且通过自由基氧化形成第二半导体层晶体管的栅极绝缘膜 或自由基氮化。

    METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
    24.
    发明申请
    METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 审中-公开
    制造半导体器件和半导体器件的方法

    公开(公告)号：US20130140700A1

    公开(公告)日：2013-06-06

    申请号：US13814950

    申请日：2011-08-04

    申请人： Tadahiro Ohmi

    发明人： Tadahiro Ohmi

    IPC分类号： H01L23/48 ,  H01L21/768

    CPC分类号： H01L23/481 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02274 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/76843 ,  H01L21/76898 ,  H01L25/0657 ,  H01L2224/16

    摘要： Provided is a method of manufacturing a TSV structure, which prevents a substrate from warping even if it is made thin. A method of manufacturing a semiconductor device comprises integrating semiconductor elements on a surface of a semiconductor substrate to form at least a part of a circuit, forming holes from the surface of the semiconductor substrate, forming an insulating film and a barrier film on an inner surface of each hole, forming a conductive metal on a surface of the barrier film to fill each hole, processing a back surface of the semiconductor substrate to reduce the thickness thereof to thereby protrude the conductive metal, and providing a SiCN film on the back surface of the semiconductor substrate.

    摘要翻译： 提供一种制造TSV结构的方法，即使其变薄，也可防止基板翘曲。 一种制造半导体器件的方法包括：在半导体衬底的表面上集成半导体元件以形成电路的至少一部分，从半导体衬底的表面形成空穴，在内表面上形成绝缘膜和阻挡膜 的每个孔，在阻挡膜的表面上形成导电金属以填充每个孔，处理半导体衬底的背面以减小其厚度，从而突出导电金属，并在导电金属的背面提供SiCN膜 半导体衬底。

    PHOTOELECTRIC CONVERSION MEMBER
    25.
    发明申请
    PHOTOELECTRIC CONVERSION MEMBER 审中-公开
    光电转换会员

    公开(公告)号：US20130118568A1

    公开(公告)日：2013-05-16

    申请号：US13812159

    申请日：2011-07-22

    申请人： Tadahiro Ohmi ,  Takurou Kumamoto

    发明人： Tadahiro Ohmi ,  Takurou Kumamoto

    IPC分类号： H01L31/024

    CPC分类号： H01L31/024 ,  H01L31/022483 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465 ,  H01L31/052 ,  H01L31/075 ,  H01L31/1868 ,  Y02E10/548 ,  Y02P70/521

    摘要： It is an object of this invention to provide a photoelectric conversion member including a heat dissipation mechanism which is more excellent in heat dissipation characteristics than conventional mechanisms. A photoelectric conversion member 1 of this invention includes a first electrode layer 20, a power generation laminate 22, and a second electrode layer 26 formed on the power generation laminate 22 through a nickel layer 24. A passivation layer 28 made of a material containing SiCN is formed on the second electrode layer 26. On the passivation layer 28, a heat dissipation structure 31 is provided.The heat dissipation structure 31 contains 40 to 750 parts by mass of an expanded graphite powder (E) per 100 parts by mass of at least one type of polymer (S).

    摘要翻译： 本发明的目的是提供一种光电转换元件，其包括散热特性比传统机构更优异的散热机构。 本发明的光电转换构件1包括通过镍层24形成在发电叠层22上的第一电极层20，发电层压板22和第二电极层26.由含有SiCN的材料制成的钝化层28 形成在第二电极层26上。在钝化层28上设置有散热结构31。 散热结构31每100质量份的至少一种聚合物（S）含有40〜750质量份的膨胀石墨粉末（E）。

    VAPORIZER
    26.
    发明申请
    VAPORIZER 有权
    蒸气器

    公开(公告)号：US20130084059A1

    公开(公告)日：2013-04-04

    申请号：US13563983

    申请日：2012-08-01

    申请人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Masaaki Nagase ,  Satoru Yamashita ,  Atsushi Hidaka ,  Ryousuke Dohi ,  Kouji Nishino ,  Nobukazu Ikeda ,  Keiji Hirao

    发明人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Masaaki Nagase ,  Satoru Yamashita ,  Atsushi Hidaka ,  Ryousuke Dohi ,  Kouji Nishino ,  Nobukazu Ikeda ,  Keiji Hirao

    IPC分类号： C23C14/00 ,  F22B1/28

    CPC分类号： C23C16/4483 ,  F22B1/284

    摘要： A vaporizer, capable of stabilizing the behavior of pressure inside the vaporizer, includes a chamber having an inlet and an outlet, a heating device that heats the inside of the chamber, a partition wall structure 13 that is provided inside the vaporizer and partitions the liquid material inside the chamber into a plurality of sections, and liquid distribution portions 20 that are provided at the lower portion of the partition wall structure 13 and that allow liquid distribution among the sections partitioned by the partition wall structure 13, and the partition wall structure includes a grid-like, honeycomb-shaped, mesh-like, or pipe-shaped partition wall.

    摘要翻译： 能够稳定蒸发器内的压力行为的蒸发器包括具有入口和出口的室，加热室内的加热装置，设置在蒸发器内部并分隔液体的分隔壁结构13 室内的材料分成多个部分，分隔部分20设置在分隔壁结构13的下部并且允许在由分隔壁结构13分隔的部分之间进行液体分配，以及分隔壁结构包括 网状，蜂窝状，网状或管状隔壁。

    METHOD OF PRODUCING SEMICONDUCTOR TRANSISTOR
    27.
    发明申请
    METHOD OF PRODUCING SEMICONDUCTOR TRANSISTOR 有权
    生产半导体晶体管的方法

    公开(公告)号：US20130052816A1

    公开(公告)日：2013-02-28

    申请号：US13582239

    申请日：2011-03-02

    申请人： Hiroshi Kambayashi ,  Akinobu Teramoto ,  Tadahiro Ohmi

    发明人： Hiroshi Kambayashi ,  Akinobu Teramoto ,  Tadahiro Ohmi

    IPC分类号： H01L21/28

    CPC分类号： H01L21/28575 ,  H01L21/28264 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/66522

    摘要： A method of producing a semiconductor transistor involving formation of an ohmic electrode on an active layer composed of a GaN-based semiconductor includes a process of forming a first layer 11 composed of tantalum nitride on an active layer 3 and a second layer 12 composed of Al layered on the first layer 11 and a process of forming ohmic electrodes 9s and 9d in ohmic contact with the active layer 3 by heat treating the first layer 11 and the second layer 12 at a temperature of from 520° C. to 600° C.

    摘要翻译： 涉及在由GaN基半导体构成的有源层上形成欧姆电极的半导体晶体管的制造方法包括在有源层3上形成由氮化钽构成的第一层11和由Al构成的第二层12的工序 层叠在第一层11上，并且通过在520℃至600℃的温度下热处理第一层11和第二层12，形成欧姆电极9s和9d与有源层3欧姆接触的工艺。

    Heat resisting vacuum insulating material and heating device
    28.
    发明授权
    Heat resisting vacuum insulating material and heating device 有权
    耐热真空绝热材料及加热装置

    公开(公告)号：US08299403B2

    公开(公告)日：2012-10-30

    申请号：US12298192

    申请日：2007-04-20

    申请人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Sadao Kobayashi ,  Yoshihide Wakayama ,  Kazutaka Uekado

    发明人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Sadao Kobayashi ,  Yoshihide Wakayama ,  Kazutaka Uekado

    IPC分类号： F23Q7/22

    CPC分类号： H01L21/67103 ,  C23C14/22 ,  C23C14/56 ,  C23C16/4412 ,  F01N13/08 ,  F01N13/146 ,  F16L53/38 ,  F16L58/00 ,  F16L59/065 ,  Y10T428/2933

    摘要： A heating device includes a heat resisting vacuum insulator (4) wound around the outer periphery of an electric heater (3) disposed along the outer wall of an exhaust pipe (1), wherein the electric heater (3) has a resistance heating element and a heat resisting electric insulator covering this resistance heating element, and the heat resisting vacuum insulator (4) includes a hollow platy covering material air-tightly sealed thereinside by a metal seat (5) having a heat resisting temperature of at least 100° C., and a fibrous or granular filling material (6) filled in the hollow portion of this covering material and having a heat resisting temperature of at least 100° C., the inside of the covering material being kept in a vacuum state.

    摘要翻译： 加热装置包括围绕沿着排气管（1）的外壁设置的电加热器（3）的外周缠绕的耐热真空绝缘体（4），其中电加热器（3）具有电阻加热元件， 覆盖该电阻加热元件的耐热电绝缘体，并且耐热真空绝热体（4）包括由耐热温度为至少100℃的金属座（5）气密地密封在其中的中空板状覆盖材料。 以及填充在该覆盖材料的中空部分中并具有至少100℃的耐热温度的纤维或颗粒填充材料（6），覆盖材料的内部保持在真空状态。

    CONTROL VALVE DEVICE
    30.
    发明申请
    CONTROL VALVE DEVICE 审中-公开
    控制阀装置

    公开(公告)号：US20120241023A1

    公开(公告)日：2012-09-27

    申请号：US13508448

    申请日：2010-10-29

    申请人： Nobukazu Ikeda ,  Michio Yamaji ,  Tsuyoshi Tanikawa ,  Hiroshi Kaneko ,  Yasushi Yagi ,  Yuji Ono ,  Tadahiro Ohmi ,  Yasuyuki Shirai

    发明人： Nobukazu Ikeda ,  Michio Yamaji ,  Tsuyoshi Tanikawa ,  Hiroshi Kaneko ,  Yasushi Yagi ,  Yuji Ono ,  Tadahiro Ohmi ,  Yasuyuki Shirai

    IPC分类号： F16K31/128 ,  F16K1/34

    CPC分类号： F16K31/126 ,  F16K1/34 ,  F16K25/005 ,  Y10T137/776

    摘要： A control valve device develops opening/closing accuracy of a valve assembly. The valve head 310a is configured to open and close a transfer path formed in the valve housing 305 by transmitting the power to the valve assembly 310 from the power transmission member according to a pressure ratio between working fluid supplied to the first space Us and the second space Ls, respectively. The valve head has a Vickers hardness larger than a Vickers hardness of a valve seat of the transfer path to be in contact with the valve head, and a hardness difference therebetween is set to be about 200 Hv to about 300 Hv.

    摘要翻译： 控制阀装置产生阀组件的开/关精度。 阀头310a被构造成通过根据供应到第一空间Us的工作流体与第二空间的第二压力之间的压力比将从动力传递构件传递到阀组件310的动力来打开和关闭形成在阀壳体305中的传送路径 空间Ls。 阀头的维氏硬度大于与阀头接触的传送路径的阀座的维氏硬度，并且其间的硬度差设定为约200Hv至约300Hv。