公开(公告)号：US08465719B2

公开(公告)日：2013-06-18

申请号：US12425247

申请日：2009-04-16

申请人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Sumio Sano ,  Fusao Fujita

发明人： Tadahiro Ohmi ,  Akinobu Teramoto ,  Sumio Sano ,  Fusao Fujita

IPC分类号： C01B31/36

CPC分类号： C23C16/325 ,  C23C16/01 ,  C23C16/56 ,  H01L23/49866 ,  H01L2924/0002 ,  H01L2924/3011 ,  H05K1/024 ,  H05K1/0306 ,  H05K3/0011 ,  H05K2203/1105 ,  H01L2924/00

摘要： A silicon carbide substrate has a high-frequency loss equal to or less than 2.0 dB/mm at 20 GHz is effective to mount and operate electronic components. The silicon carbide substrate is heated at 2000° C. or more to be reduced to the high-frequency loss equal to 2.0 dB/mm or less at 20 GHz. Moreover, manufacturing the silicon carbide substrate by CVD without flowing nitrogen into a heater enables the high-frequency loss to be reduced to 2.0 dB/mm or less.

摘要翻译： 在20GHz时，碳化硅衬底具有等于或小于2.0dB / mm的高频损耗有效地安装和操作电子元件。 将碳化硅衬底在2000℃或更高温度下加热至20GHz时降低至2.0dB / mm以下的高频损耗。 此外，通过CVD制造碳化硅衬底，而不将氮气流入加热器，能够将高频损耗降低到2.0dB / mm以下。

公开(公告)号：US20130140700A1

公开(公告)日：2013-06-06

申请号：US13814950

申请日：2011-08-04

申请人： Tadahiro Ohmi

发明人： Tadahiro Ohmi

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L23/481 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02274 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/76843 ,  H01L21/76898 ,  H01L25/0657 ,  H01L2224/16

摘要： Provided is a method of manufacturing a TSV structure, which prevents a substrate from warping even if it is made thin. A method of manufacturing a semiconductor device comprises integrating semiconductor elements on a surface of a semiconductor substrate to form at least a part of a circuit, forming holes from the surface of the semiconductor substrate, forming an insulating film and a barrier film on an inner surface of each hole, forming a conductive metal on a surface of the barrier film to fill each hole, processing a back surface of the semiconductor substrate to reduce the thickness thereof to thereby protrude the conductive metal, and providing a SiCN film on the back surface of the semiconductor substrate.

摘要翻译： 提供一种制造TSV结构的方法，即使其变薄，也可防止基板翘曲。 一种制造半导体器件的方法包括：在半导体衬底的表面上集成半导体元件以形成电路的至少一部分，从半导体衬底的表面形成空穴，在内表面上形成绝缘膜和阻挡膜 的每个孔，在阻挡膜的表面上形成导电金属以填充每个孔，处理半导体衬底的背面以减小其厚度，从而突出导电金属，并在导电金属的背面提供SiCN膜 半导体衬底。

公开(公告)号：US20130118568A1

公开(公告)日：2013-05-16

申请号：US13812159

申请日：2011-07-22

申请人： Tadahiro Ohmi ,  Takurou Kumamoto

发明人： Tadahiro Ohmi ,  Takurou Kumamoto

IPC分类号： H01L31/024

CPC分类号： H01L31/024 ,  H01L31/022483 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465 ,  H01L31/052 ,  H01L31/075 ,  H01L31/1868 ,  Y02E10/548 ,  Y02P70/521

摘要： It is an object of this invention to provide a photoelectric conversion member including a heat dissipation mechanism which is more excellent in heat dissipation characteristics than conventional mechanisms. A photoelectric conversion member 1 of this invention includes a first electrode layer 20, a power generation laminate 22, and a second electrode layer 26 formed on the power generation laminate 22 through a nickel layer 24. A passivation layer 28 made of a material containing SiCN is formed on the second electrode layer 26. On the passivation layer 28, a heat dissipation structure 31 is provided.The heat dissipation structure 31 contains 40 to 750 parts by mass of an expanded graphite powder (E) per 100 parts by mass of at least one type of polymer (S).

摘要翻译： 本发明的目的是提供一种光电转换元件，其包括散热特性比传统机构更优异的散热机构。 本发明的光电转换构件1包括通过镍层24形成在发电叠层22上的第一电极层20，发电层压板22和第二电极层26.由含有SiCN的材料制成的钝化层28 形成在第二电极层26上。在钝化层28上设置有散热结构31。 散热结构31每100质量份的至少一种聚合物（S）含有40〜750质量份的膨胀石墨粉末（E）。

公开(公告)号：US20130084059A1

公开(公告)日：2013-04-04

申请号：US13563983

申请日：2012-08-01

申请人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Masaaki Nagase ,  Satoru Yamashita ,  Atsushi Hidaka ,  Ryousuke Dohi ,  Kouji Nishino ,  Nobukazu Ikeda ,  Keiji Hirao

发明人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Masaaki Nagase ,  Satoru Yamashita ,  Atsushi Hidaka ,  Ryousuke Dohi ,  Kouji Nishino ,  Nobukazu Ikeda ,  Keiji Hirao

IPC分类号： C23C14/00 ,  F22B1/28

CPC分类号： C23C16/4483 ,  F22B1/284

摘要： A vaporizer, capable of stabilizing the behavior of pressure inside the vaporizer, includes a chamber having an inlet and an outlet, a heating device that heats the inside of the chamber, a partition wall structure 13 that is provided inside the vaporizer and partitions the liquid material inside the chamber into a plurality of sections, and liquid distribution portions 20 that are provided at the lower portion of the partition wall structure 13 and that allow liquid distribution among the sections partitioned by the partition wall structure 13, and the partition wall structure includes a grid-like, honeycomb-shaped, mesh-like, or pipe-shaped partition wall.

摘要翻译： 能够稳定蒸发器内的压力行为的蒸发器包括具有入口和出口的室，加热室内的加热装置，设置在蒸发器内部并分隔液体的分隔壁结构13 室内的材料分成多个部分，分隔部分20设置在分隔壁结构13的下部并且允许在由分隔壁结构13分隔的部分之间进行液体分配，以及分隔壁结构包括 网状，蜂窝状，网状或管状隔壁。

公开(公告)号：US20130052816A1

公开(公告)日：2013-02-28

申请号：US13582239

申请日：2011-03-02

申请人： Hiroshi Kambayashi ,  Akinobu Teramoto ,  Tadahiro Ohmi

发明人： Hiroshi Kambayashi ,  Akinobu Teramoto ,  Tadahiro Ohmi

IPC分类号： H01L21/28

CPC分类号： H01L21/28575 ,  H01L21/28264 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/66522

摘要： A method of producing a semiconductor transistor involving formation of an ohmic electrode on an active layer composed of a GaN-based semiconductor includes a process of forming a first layer 11 composed of tantalum nitride on an active layer 3 and a second layer 12 composed of Al layered on the first layer 11 and a process of forming ohmic electrodes 9s and 9d in ohmic contact with the active layer 3 by heat treating the first layer 11 and the second layer 12 at a temperature of from 520° C. to 600° C.

摘要翻译： 涉及在由GaN基半导体构成的有源层上形成欧姆电极的半导体晶体管的制造方法包括在有源层3上形成由氮化钽构成的第一层11和由Al构成的第二层12的工序 层叠在第一层11上，并且通过在520℃至600℃的温度下热处理第一层11和第二层12，形成欧姆电极9s和9d与有源层3欧姆接触的工艺。

公开(公告)号：US08299403B2

公开(公告)日：2012-10-30

申请号：US12298192

申请日：2007-04-20

申请人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Sadao Kobayashi ,  Yoshihide Wakayama ,  Kazutaka Uekado

发明人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Sadao Kobayashi ,  Yoshihide Wakayama ,  Kazutaka Uekado

IPC分类号： F23Q7/22

CPC分类号： H01L21/67103 ,  C23C14/22 ,  C23C14/56 ,  C23C16/4412 ,  F01N13/08 ,  F01N13/146 ,  F16L53/38 ,  F16L58/00 ,  F16L59/065 ,  Y10T428/2933

摘要： A heating device includes a heat resisting vacuum insulator (4) wound around the outer periphery of an electric heater (3) disposed along the outer wall of an exhaust pipe (1), wherein the electric heater (3) has a resistance heating element and a heat resisting electric insulator covering this resistance heating element, and the heat resisting vacuum insulator (4) includes a hollow platy covering material air-tightly sealed thereinside by a metal seat (5) having a heat resisting temperature of at least 100° C., and a fibrous or granular filling material (6) filled in the hollow portion of this covering material and having a heat resisting temperature of at least 100° C., the inside of the covering material being kept in a vacuum state.

摘要翻译： 加热装置包括围绕沿着排气管（1）的外壁设置的电加热器（3）的外周缠绕的耐热真空绝缘体（4），其中电加热器（3）具有电阻加热元件， 覆盖该电阻加热元件的耐热电绝缘体，并且耐热真空绝热体（4）包括由耐热温度为至少100℃的金属座（5）气密地密封在其中的中空板状覆盖材料。 以及填充在该覆盖材料的中空部分中并具有至少100℃的耐热温度的纤维或颗粒填充材料（6），覆盖材料的内部保持在真空状态。

公开(公告)号：US20120247961A1

公开(公告)日：2012-10-04

申请号：US13463315

申请日：2012-05-03

申请人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Hitoshi Morinaga ,  Yasuhiro Kawase ,  Masafumi Kitano ,  Fumikazu Mizutani ,  Makoto Ishikawa

发明人： Tadahiro Ohmi ,  Yasuyuki Shirai ,  Hitoshi Morinaga ,  Yasuhiro Kawase ,  Masafumi Kitano ,  Fumikazu Mizutani ,  Makoto Ishikawa

IPC分类号： C25D11/04 ,  C25D3/00 ,  C25D19/00 ,  C25D5/50 ,  C25D11/10 ,  C25D7/00 ,  B82Y40/00 ,  B82Y99/00

CPC分类号： C25D11/06 ,  C25D11/18 ,  Y10T428/265

摘要： A metal oxide film suitable for protection of metals, composed mainly of aluminum. A metal oxide film includes a film of an oxide of a metal composed mainly of aluminum, having a thickness of 10 nm or greater, and exhibiting a moisture release rate from the film of 1E18 mol./cm2 or less. Further, there is provided a process for producing a metal oxide film, wherein a metal composed mainly of aluminum is subjected to anodic oxidation in a chemical solution of 4 to 10 pH value so as to obtain a metal oxide film.

摘要翻译： 适用于主要由铝组成的金属保护金属氧化物膜。 金属氧化物膜包括厚度为10nm以上的主要由铝构成的金属的氧化物的膜，并且具有1E18mol / cm 2以下的膜的水分释放率。 此外，提供了一种制造金属氧化物膜的方法，其中主要由铝组成的金属在pH值为4至10的化学溶液中进行阳极氧化，以获得金属氧化物膜。

公开(公告)号：US20120241023A1

公开(公告)日：2012-09-27

申请号：US13508448

申请日：2010-10-29

申请人： Nobukazu Ikeda ,  Michio Yamaji ,  Tsuyoshi Tanikawa ,  Hiroshi Kaneko ,  Yasushi Yagi ,  Yuji Ono ,  Tadahiro Ohmi ,  Yasuyuki Shirai

发明人： Nobukazu Ikeda ,  Michio Yamaji ,  Tsuyoshi Tanikawa ,  Hiroshi Kaneko ,  Yasushi Yagi ,  Yuji Ono ,  Tadahiro Ohmi ,  Yasuyuki Shirai

IPC分类号： F16K31/128 ,  F16K1/34

CPC分类号： F16K31/126 ,  F16K1/34 ,  F16K25/005 ,  Y10T137/776

摘要： A control valve device develops opening/closing accuracy of a valve assembly. The valve head 310a is configured to open and close a transfer path formed in the valve housing 305 by transmitting the power to the valve assembly 310 from the power transmission member according to a pressure ratio between working fluid supplied to the first space Us and the second space Ls, respectively. The valve head has a Vickers hardness larger than a Vickers hardness of a valve seat of the transfer path to be in contact with the valve head, and a hardness difference therebetween is set to be about 200 Hv to about 300 Hv.

摘要翻译： 控制阀装置产生阀组件的开/关精度。 阀头310a被构造成通过根据供应到第一空间Us的工作流体与第二空间的第二压力之间的压力比将从动力传递构件传递到阀组件310的动力来打开和关闭形成在阀壳体305中的传送路径 空间Ls。 阀头的维氏硬度大于与阀头接触的传送路径的阀座的维氏硬度，并且其间的硬度差设定为约200Hv至约300Hv。

公开(公告)号：US08263174B2

公开(公告)日：2012-09-11

申请号：US12304316

申请日：2007-06-13

申请人： Yasushi Yagi ,  Shingo Watanabe ,  Toshihisa Nozawa ,  Chuichi Kawamura ,  Kimihiko Yoshino ,  Tadahiro Ohmi

发明人： Yasushi Yagi ,  Shingo Watanabe ,  Toshihisa Nozawa ,  Chuichi Kawamura ,  Kimihiko Yoshino ,  Tadahiro Ohmi

IPC分类号： B05D5/06 ,  B05D5/12 ,  C23C16/00 ,  H01J9/00

CPC分类号： H01L51/001 ,  C23C14/12 ,  C23C14/28 ,  H01L51/56

摘要： Disclosed is a light emitting device manufacturing apparatus including a plurality of processing chambers for performing a substrate processing for forming, on a target substrate, a light emitting device having multiple layers including an organic layer, wherein each of the plurality of processing chambers is configured to perform a substrate process on the target substrate while maintaining the target substrate such that its device forming surface, on which the light emitting device is to be formed, is oriented toward a direction opposite to a direction of gravity.

摘要翻译： 公开了一种发光器件制造设备，包括：多个处理室，用于执行用于在目标衬底上形成包括有机层的多层的发光器件的衬底处理，其中，所述多个处理室中的每一个被配置为 在目标衬底上执行衬底处理，同时保持目标衬底，使得要在其上形成发光器件的器件形成表面朝向与重力方向相反的方向。

公开(公告)号：US08183670B2

公开(公告)日：2012-05-22

申请号：US11651034

申请日：2007-01-09

申请人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akinobu Teramoto ,  Hiroshi Akahori ,  Keiichi Nii

发明人： Tadahiro Ohmi ,  Shigetoshi Sugawa ,  Akinobu Teramoto ,  Hiroshi Akahori ,  Keiichi Nii

IPC分类号： H01L29/04

CPC分类号： H01L21/3185 ,  H01L21/30604 ,  H01L21/31654 ,  H01L21/318 ,  H01L29/6659

摘要： In a semiconductor device formed on a silicon surface which has a substantial (110) crystal plane orientation, the silicon surface is flattened so that an arithmetical mean deviation of surface Ra is not greater than 0.15 nm, preferably, 0.09 nm, which enables to manufacture an n-MOS transistor of a high mobility. Such a flattened silicon surface is obtained by repeating a deposition process of a self-sacrifice oxide film in an oxygen radical atmosphere and a removing process of the self-sacrifice oxide film, by cleaning the silicon surface in deaerated H2O or a low OH density atmosphere, or by strongly terminating the silicon surface by hydrogen or heavy hydrogen. The deposition process of the self-sacrifice oxide film may be carried out by isotropic oxidation.

摘要翻译： 在形成在具有大致（110）晶面取向的硅表面上的半导体器件中，硅表面变平，使得表面Ra的算术平均偏差不大于0.15nm，优选为0.09nm，这使得能够制造 高迁移率的n-MOS晶体管。 通过在脱氧H 2 O或低OH密度气氛中清洗硅表面，通过在氧自由基气氛中重复自牺牲氧化物膜的沉积工艺和自牺牲氧化物膜的去除工艺来获得这种扁平化的硅表面 ，或通过氢或重氢强烈地终止硅表面。 自牺牲氧化膜的沉积工艺可以通过各向同性氧化进行。