公开(公告)号：US08012887B2

公开(公告)日：2011-09-06

申请号：US12489234

申请日：2009-06-22

申请人： Shankar Venkataraman ,  Hiroshi Hamana ,  Manuel A. Hernandez ,  Nitin K. Ingle ,  Paul Edward Gee

发明人： Shankar Venkataraman ,  Hiroshi Hamana ,  Manuel A. Hernandez ,  Nitin K. Ingle ,  Paul Edward Gee

IPC分类号： H01L21/31 ,  C23C16/00

CPC分类号： H01L21/31612 ,  C23C16/401 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02222 ,  H01L21/02271 ,  H01L21/76224

摘要： Methods of depositing silicon oxide layers on substrates involve flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that a uniform silicon oxide growth rate is achieved across the substrate surface. The surface of silicon oxide layers grown according to embodiments may have a reduced roughness when grown with the additive precursor. In other aspects of the disclosure, silicon oxide layers are deposited on a patterned substrate with trenches on the surface by flowing a silicon-containing precursor, an oxidizing gas, water and an additive precursor into a processing chamber such that the trenches are filled with a reduced quantity and/or size of voids within the silicon oxide filler material.

摘要翻译： 在衬底上沉积氧化硅层的方法包括使含硅前体，氧化气体，水和添加剂前体流入处理室，使得在衬底表面上实现均匀的氧化硅生长速率。 根据实施例生长的氧化硅层的表面可以在与添加剂前体一起生长时具有减小的粗糙度。 在本公开的其他方面中，通过使含硅前体，氧化气体，水和添加剂前体流入处理室，将硅氧化物层沉积在具有表面上的沟槽的图案化衬底上，使得沟槽填充有 氧化硅填充材料内的空隙的数量和/或尺寸减小。

公开(公告)号：US07939422B2

公开(公告)日：2011-05-10

申请号：US11947674

申请日：2007-11-29

申请人： Nitin K. Ingle ,  Jing Tang ,  Yi Zheng ,  Zheng Yuan ,  Zhenbin Ge ,  Xinliang Lu ,  Chien-Teh Kao ,  Vikash Banthia ,  William H. McClintock ,  Mei Chang

发明人： Nitin K. Ingle ,  Jing Tang ,  Yi Zheng ,  Zheng Yuan ,  Zhenbin Ge ,  Xinliang Lu ,  Chien-Teh Kao ,  Vikash Banthia ,  William H. McClintock ,  Mei Chang

IPC分类号： H01L21/76

CPC分类号： H01L21/67253 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/76232

摘要： A method for forming a semiconductor structure includes forming a plurality of features across a surface of a substrate, with at least one space being between two adjacent features. A first dielectric layer is formed on the features and within the at least one space. A portion of the first dielectric layer interacts with a reactant derived from a first precursor and a second precursor to form a first solid product. The first solid product is decomposed to substantially remove the portion of the first dielectric layer. A second dielectric layer is formed to substantially fill the at least one space.

摘要翻译： 一种用于形成半导体结构的方法包括跨越衬底的表面形成多个特征，其中至少一个空间位于两个相邻特征之间。 第一电介质层形成在特征上并且在至少一个空间内。 第一介电层的一部分与衍生自第一前体和第二前体的反应物相互作用以形成第一固体产物。 第一固体产物被分解以基本上除去第一介电层的部分。 形成第二电介质层以基本上填充至少一个空间。

公开(公告)号：US20090031955A1

公开(公告)日：2009-02-05

申请号：US11830589

申请日：2007-07-30

申请人： Siqing Lu ,  Balaji Chandrasekaran ,  Paul Edward Gee ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Zheng Yuan ,  Ellie Y. Yieh

发明人： Siqing Lu ,  Balaji Chandrasekaran ,  Paul Edward Gee ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Zheng Yuan ,  Ellie Y. Yieh

IPC分类号： C23C16/00 ,  B23B31/30

CPC分类号： C23C16/4586 ,  C23C16/4584 ,  Y10T279/11

摘要： Embodiments of a vacuum chuck having an axisymmetrical and/or more uniform thermal profile are provided herein. In some embodiments, a vacuum chuck includes a body having a support surface for supporting a substrate thereupon; a plurality of axisymmetrically arranged grooves formed in the support surface, at least some of the grooves intersecting; and a plurality of chucking holes formed through the body and within the grooves, the chucking holes for fluidly coupling the grooves to a vacuum source during operation, wherein the chucking holes are disposed in non-intersecting portions of the grooves.

摘要翻译： 具有轴对称和/或更均匀的热分布的真空吸盘的实施例在此提供。 在一些实施例中，真空卡盘包括具有用于支撑基板的支撑表面的主体; 形成在支撑表面中的多个轴对称布置的槽，至少一些槽相交; 以及在所述槽内形成的多个夹持孔，所述夹持孔用于在操作期间将所述槽流体耦合到真空源，其中所述夹紧孔设置在所述槽的非交叉部分中。

公开(公告)号：US09390914B2

公开(公告)日：2016-07-12

申请号：US13396410

申请日：2012-02-14

申请人： Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle

发明人： Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC分类号： H01L21/02

CPC分类号： H01L21/02326 ,  H01L21/02343

摘要： Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate.

摘要翻译： 提供了对在衬底内限定的沟槽或通孔内填充的含硅介电材料进行湿氧化处理的方法。 在一个实施例中，在衬底上形成介电材料的方法包括通过可流动CVD工艺在衬底上形成电介质材料，固化设置在衬底上的电介质材料，对设置在衬底上的电介质材料进行湿氧化处理 并在衬底上形成氧化介电材料。

公开(公告)号：US08629067B2

公开(公告)日：2014-01-14

申请号：US12969877

申请日：2010-12-16

申请人： Jingmei Liang ,  Xiaolin Chen ,  Matthew L. Miller ,  Nitin K. Ingle ,  Shankar Venkataraman

发明人： Jingmei Liang ,  Xiaolin Chen ,  Matthew L. Miller ,  Nitin K. Ingle ,  Shankar Venkataraman

IPC分类号： H01L21/31

CPC分类号： H01L21/02164 ,  C23C16/345 ,  C23C16/452 ,  C23C16/56 ,  H01J37/32357 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02326 ,  H01L21/02337

摘要： Methods of forming dielectric layers are described. The method may include the steps of mixing a silicon-containing precursor with a radical-nitrogen precursor, and depositing a dielectric layer on a substrate. The radical-nitrogen precursor is formed in a remote plasma by flowing hydrogen (H2) and nitrogen (N2) into the plasma in order to allow adjustment of the nitrogen/hydrogen ratio. The dielectric layer is initially a silicon-and-nitrogen-containing layer which may be converted to a silicon-and-oxygen-containing layer by curing and/or annealing the film in an oxygen-containing environment.

摘要翻译： 描述形成电介质层的方法。 该方法可以包括以下步骤：将含硅前体与自由基 - 氮前体混合，并在基底上沉积电介质层。 通过使氢（H 2）和氮（N 2）流入等离子体中，在远离等离子体中形成自由基 - 氮前体，以便调整氮/氢比。 电介质层最初是含硅和氮的层，其可以通过在含氧环境中固化和/或退火该膜而转化为含硅和氧的层。

公开(公告)号：US20130217243A1

公开(公告)日：2013-08-22

申请号：US13590761

申请日：2012-08-21

申请人： Brian S. Underwood ,  Nitin K. Ingle ,  Abhijit Basu Mallick

发明人： Brian S. Underwood ,  Nitin K. Ingle ,  Abhijit Basu Mallick

IPC分类号： H01L21/02

CPC分类号： H01L21/02356 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02222 ,  H01L21/02274 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/31111 ,  H01L21/31155

摘要： Methods are described for forming and treating a flowable silicon-carbon-and-nitrogen-containing layer on a semiconductor substrate. The silicon and carbon constituents may come from a silicon-and-carbon-containing precursor while the nitrogen may come from a nitrogen-containing precursor that has been activated to speed the reaction of the nitrogen with the silicon-and-carbon-containing precursor at lower deposition temperatures. The initially-flowable silicon-carbon-and-nitrogen-containing layer is ion implanted to increase etch tolerance, prevent shrinkage, adjust film tension and/or adjust electrical characteristics. Ion implantation may also remove components which enabled the flowability, but are no longer needed after deposition. Some treatments using ion implantation have been found to decrease the evolution of properties of the film upon exposure to atmosphere.

摘要翻译： 描述了用于在半导体衬底上形成和处理可流动的含硅 - 碳和氮的层的方法。 硅和碳组分可以来自含硅和碳的前体，而氮可以来自已经被活化以加速氮与含硅和碳的前体的反应的含氮前体 较低的沉积温度。 初始可流动的含硅碳和氮的层被离子注入以增加蚀刻耐受性，防止收缩，调节膜张力和/或调节电特性。 离子注入还可以去除能够流动的组分，但是在沉积后不再需要它们。 已经发现使用离子注入的一些处理降低了暴露于大气中的膜的性质的演变。

公开(公告)号：US08318584B2

公开(公告)日：2012-11-27

申请号：US13153016

申请日：2011-06-03

申请人： DongQing Li ,  Jingmei Liang ,  Nitin K. Ingle

发明人： DongQing Li ,  Jingmei Liang ,  Nitin K. Ingle

IPC分类号： H01L21/76

CPC分类号： H01L21/02164 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02326 ,  H01L21/02337

摘要： The formation of a gap-filling silicon oxide layer with reduced volume fraction of voids is described. The deposition involves the formation of an oxygen-rich less-flowable liner layer before an oxygen-poor more-flowable gapfill layer. However, the liner layer is deposited within the same chamber as the gapfill layer. The liner layer and the gapfill layer may both be formed by combining a radical component with an unexcited silicon-containing precursor (i.e. not directly excited by application of plasma power). The liner layer has more oxygen content than the gapfill layer and deposits more conformally. The deposition rate of the gapfill layer may be increased by the presence of the liner layer. The gapfill layer may contain silicon, oxygen and nitrogen and be converted at elevated temperature to contain more oxygen and less nitrogen. The presence of the gapfill liner provides a source of oxygen underneath the gapfill layer to augment the gas phase oxygen introduced during the conversion.

摘要翻译： 描述了具有减小的空隙体积分数的间隙填充氧化硅层的形成。 沉积涉及在贫氧的可流动的间隙填充层之前形成富氧的较少可流动的衬层。 然而，衬垫层沉积在与间隙填充层相同的腔室内。 衬垫层和间隙填充层可以通过将自由基组分与未掺杂的含硅前体（即不通过施加等离子体功率直接激发）组合来形成。 衬垫层比间隙填充层具有更多的氧含量并且更保守地沉积。 间隙填充层的沉积速率可以通过衬垫层的存在而增加。 间隙填充层可以含有硅，氧和氮并且在升高的温度下转化以含有更多的氧和更少的氮。 间隙填料衬垫的存在在间隙填充层下面提供氧气源，以增加在转化期间引入的气相氧。

公开(公告)号：US20120142198A1

公开(公告)日：2012-06-07

申请号：US13396410

申请日：2012-02-14

申请人： Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle

发明人： Linlin Wang ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC分类号： H01L21/316

CPC分类号： H01L21/02326 ,  H01L21/02343

摘要： Methods of performing a wet oxidation process on a silicon containing dielectric material filling within trenches or vias defined within a substrate are provided. In one embodiment, a method of forming a dielectric material on a substrate includes forming a dielectric material on a substrate by a flowable CVD process, curing the dielectric material disposed on the substrate, performing a wet oxidation process on the dielectric material disposed on the substrate, and forming an oxidized dielectric material on the substrate.

摘要翻译： 提供了对在衬底内限定的沟槽或通孔内填充的含硅介电材料进行湿氧化处理的方法。 在一个实施例中，在衬底上形成介电材料的方法包括通过可流动CVD工艺在衬底上形成电介质材料，固化设置在衬底上的电介质材料，对设置在衬底上的电介质材料进行湿氧化处理 并在衬底上形成氧化介电材料。

公开(公告)号：US20110165781A1

公开(公告)日：2011-07-07

申请号：US12974495

申请日：2010-12-21

申请人： Jingmei Liang ,  Nitin K. Ingle

发明人： Jingmei Liang ,  Nitin K. Ingle

IPC分类号： H01L21/31

CPC分类号： H01L21/02164 ,  C23C16/345 ,  C23C16/56 ,  H01J37/32357 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02326 ,  H01L21/02337

摘要： Methods of forming silicon oxide layers are described. The methods include mixing a carbon-free silicon-containing precursor with a radical-nitrogen precursor, and depositing a silicon-and-nitrogen-containing layer on a substrate. The radical-nitrogen precursor is formed in a plasma by flowing a hydrogen-and-nitrogen-containing precursor into the plasma. Prior to depositing the silicon-and-nitrogen-containing layer, a silicon oxide liner layer is formed to improve adhesion, smoothness and flowability of the silicon-and-nitrogen-containing layer. The silicon-and-nitrogen-containing layer may be converted to a silicon-and-oxygen-containing layer by curing and annealing the film. Methods also include forming a silicon oxide liner layer before applying a spin-on silicon-containing material.

摘要翻译： 描述形成氧化硅层的方法。 所述方法包括将无碳的含硅前体与自由基 - 氮前体混合，并在基底上沉积含硅和氮的层。 通过使含氢和氮的前体流入等离子体，在等离子体中形成自由基 - 氮前体。 在沉积含硅和氮的层之前，形成氧化硅衬层以提高含硅和含氮层的粘附性，平滑性和流动性。 通过固化和退火膜可以将含硅和氮的层转化为含硅和氧的层。 方法还包括在施加旋涂的含硅材料之前形成氧化硅衬层。

公开(公告)号：US07935643B2

公开(公告)日：2011-05-03

申请号：US12604332

申请日：2009-10-22

申请人： Jingmei Liang ,  Anjana M. Patel ,  Nitin K. Ingle ,  Shankar Venkataraman

发明人： Jingmei Liang ,  Anjana M. Patel ,  Nitin K. Ingle ,  Shankar Venkataraman

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/31608 ,  C23C16/401 ,  C23C16/452 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/02326 ,  H01L21/02362 ,  H01L21/3185 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76837

摘要： The formation of a gap-filling silicon oxide layer with reduced tendency towards cracking is described. The deposition involves the formation of a flowable silicon-containing layer which facilitates the filling of trenches. Subsequent processing at high substrate temperature causes less cracking in the dielectric film than flowable films formed in accordance with methods in the prior art. A compressive liner layer deposited prior to the formation of the gap-filling silicon oxide layer is described and reduces the tendency for the subsequently deposited film to crack. A compressive capping layer deposited after a flowable silicon-containing layer has also been determined to reduce cracking. Compressive liner layers and compressive capping layers can be used alone or in combination to reduce and often eliminate cracking. Compressive capping layers in disclosed embodiments have additionally been determined to enable an underlying layer of silicon nitride to be transformed into a silicon oxide layer.

摘要翻译： 描述了具有降低的开裂倾向的间隙填充氧化硅层的形成。 沉积涉及形成有助于填充沟槽的可流动的含硅层。 在基板温度高的情况下，与根据现有技术中的方法形成的可流动膜相比，电介质膜中的裂纹少。 描述在形成间隙填充氧化硅层之前沉积的压缩衬垫层，并且降低随后沉积的膜破裂的倾向。 在可流动的含硅层之后沉积的压缩覆盖层也被确定以减少开裂。 压缩衬里层和压缩覆盖层可以单独使用或组合使用以减少并经常消除开裂。 已经确定了所公开的实施例中的压缩覆盖层，以使氮化硅的下层能够转变成氧化硅层。