公开(公告)号：US20070257389A1

公开(公告)日：2007-11-08

申请号：US11741603

申请日：2007-04-27

Applicant: Alexander Ruf

Inventor： Alexander Ruf

IPC: B29C41/02 ,  B29C41/52

CPC classification number: B81C1/0046 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F9/00 ,  G03F9/7042 ,  G03F9/7053

Abstract: An imprint mask for defining a structure on a substrate is provided with a probe which generates a signal as a function of the displacement of the probe by a force with a lateral component. The imprint mask is aligned relative to a substrate with an alignment mark based upon an interaction of the probe and the alignment mark.

Abstract translation: 用于在衬底上限定结构的压印掩模设置有探针，其通过具有侧向分量的力产生作为探针的位移的函数的信号。 基于探针和对准标记的相互作用，压印掩模相对于具有对准标记的基板对准。

公开(公告)号：US20070228523A1

公开(公告)日：2007-10-04

申请号：US11710314

申请日：2007-02-23

Applicant: Shashank Sharma

Inventor： Shashank Sharma

IPC: H01L29/41

CPC classification number: G03F7/0002 ,  B81C99/009 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  Y10T428/31612

Abstract: Nano-scale devices and methods provide reduced feature dimensions of features on the devices. A surface of a device substrate having a pattern of spaced apart first nanowires is consumed, such that a dimension of the first nanowires is reduced. A second nanowire is formed in a trench or gap between adjacent ones of the first nanowires, such that the nano-scale device includes a set of features that includes the first nanowires with the reduced dimension and the second nanowire spaced from the adjacent first nanowires by sub-trenches.

公开(公告)号：US20070190786A1

公开(公告)日：2007-08-16

申请号：US11623817

申请日：2007-01-17

Applicant: Kenji Murao ,  Kosuke Kuwabara ,  Masahiko Ogino

Inventor： Kenji Murao ,  Kosuke Kuwabara ,  Masahiko Ogino

IPC: H01L21/302 ,  H01L21/461

CPC classification number: B81C1/0046 ,  B29C43/021 ,  B29C2043/025 ,  B81B2201/0214 ,  B81B2203/0361 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y40/00 ,  G03F7/0002

Abstract: It is an object of the present invention to provide a method which can easily and selectively modify specific sites on indentations or protrusions of indentation/protrusion structures fabricated by nano-imprinting. Pressing a mold having indentation/protrusion structures onto a polymer substrate comprising at least two layers of different chemical composition exposes the second layer, which has been covered by the outermost layer, in pillars formed as a result of the pressing. Site-specific chemical modification of the pillars can be achieved by formulating a desired chemical composition for the second layer beforehand, or by chemical modification of the exposed second layer cross-sections in the pillars.

Abstract translation: 本发明的一个目的是提供一种方法，其可以容易且选择性地改变通过纳米压印制造的压痕/突起结构的凹陷或凸起上的特定部位。 将具有凹陷/突起结构的模具压到包含至少两层不同化学组成的聚合物基材上，将由最外层覆盖的第二层暴露在由压制形成的柱中。 可以通过预先为第二层配制所需的化学组合物，或者通过化学修饰柱中暴露的第二层横截面来实现柱的特定位点的化学修饰。

公开(公告)号：US07189635B2

公开(公告)日：2007-03-13

申请号：US10943559

申请日：2004-09-17

Applicant: Shashank Sharma

Inventor： Shashank Sharma

IPC: H01L21/20

CPC classification number: G03F7/0002 ,  B81C99/009 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  Y10T428/31612

Abstract: Nano-scale devices and methods provide reduced feature dimensions of features on the devices. A surface of a device substrate having a pattern of spaced apart first nanowires is consumed, such that a dimension of the first nanowires is reduced. A second nanowire is formed in a trench or gap between adjacent ones of the first nanowires, such that the nano-scale device includes a set of features that includes the first nanowires with the reduced dimension and the second nanowire spaced from the adjacent first nanowires by sub-trenches.

Abstract translation: 纳米级设备和方法可以减少设备上特征的特征尺寸。 具有间隔开的第一纳米线的图案的器件衬底的表面被消耗，使得第一纳米线的尺寸减小。 第二纳米线形成在相邻的第一纳米线之间的沟槽或间隙中，使得纳米级器件包括一组特征，其包括具有减小的尺寸的第一纳米线，并且第二纳米线与相邻的第一纳米线间隔开，第二纳米线通过 小壕沟

公开(公告)号：US20060108322A1

公开(公告)日：2006-05-25

申请号：US10993451

申请日：2004-11-19

Applicant: Wei Wu ,  Zhiyong Li

Inventor： Wei Wu ,  Zhiyong Li

IPC: B44C1/22 ,  B32B27/00 ,  C08L33/00 ,  B32B3/00

CPC classification number: B81C1/0046 ,  B81B2207/07 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y30/00

Abstract: A lift-off material for use in fabricating a nanostructure. The lift-off material includes a first material adapted to, and present in an amount sufficient to provide a predetermined amount of mechanical strength to the nanostructure during fabrication; and a second material adapted to, and present in an amount sufficient to provide a predetermined solubility to the lift-off material.

Abstract translation: 用于制造纳米结构的剥离材料。 剥离材料包括第一材料，其适于并且以足以在制造期间向纳米结构提供预定量的机械强度的量存在; 以及第二材料，其适于并且以足以向剥离材料提供预定溶解度的量存在。

公开(公告)号：US20050212178A1

公开(公告)日：2005-09-29

申请号：US10851113

申请日：2004-05-24

Applicant: Chin-Chung Nien ,  Ta-Chuan Liu ,  Hong Hocheng

Inventor： Chin-Chung Nien ,  Ta-Chuan Liu ,  Hong Hocheng

IPC: B29C59/02 ,  B81C1/00 ,  B81C99/00 ,  G03F7/00 ,  H05K3/00

CPC classification number: G03F7/0002 ,  B81C1/0046 ,  B81C99/0065 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00

Abstract: The present invention relates to a capacitive measurement method and system for a nanoimprint process, which arranges a plurality of electrode plates on both the backside of the master mold and the surface of the supporting base carrying the wafer substrate to form a plurality of capacitive structures. By monitoring the capacitance variation signal caused by the continuous variations in the thickness and the material properties of the resist during the imprint process, the status of the resist can be monitored and recorded, which is used as the references for determining the timing to demold in the nanoimprint process and for maintaining the flatness of the resist. Accordingly, the nanoimprint process can be automated easier and the quality and the throughput of of the nanometer scaled imprint product can be improved.

Abstract translation: 本发明涉及一种用于纳米压印工艺的电容测量方法和系统，其在主模的背面和承载晶片衬底的支撑基体的表面上布置多个电极板以形成多个电容结构。 通过监测由压印过程中厚度的连续变化和抗蚀剂的材料特性引起的电容变化信号，可以监测和记录抗蚀剂的状态，作为确定脱模时间的参考 纳米压印工艺和用于保持抗蚀剂的平整度。 因此，纳米压印工艺可以更容易自动化，并且能够提高纳米压印产品的质量和生产量。

公开(公告)号：US20030209314A1

公开(公告)日：2003-11-13

申请号：US10436657

申请日：2003-05-13

Inventor： Lingjie J. Guo ,  Xing Cheng

IPC: B32B031/00

CPC classification number: B81C1/00119 ,  B01L3/502707 ,  B01L3/502715 ,  B01L2200/12 ,  B01L2300/0681 ,  B01L2300/0896 ,  B01L2400/0418 ,  B01L2400/0421 ,  B01L2400/086 ,  B81B2201/058 ,  B81B2203/0338 ,  B81C2201/0153 ,  B82Y30/00 ,  G01N2021/058 ,  Y10S977/78 ,  Y10S977/84 ,  Y10S977/882

Abstract: A method of forming nanofluidic enclosed channels includes providing a first substrate having a layer of a first material disposed thereon. A plurality of nanoscale slots is formed along a second substrate using nanolithography, etching, or other disclosed techniques. The first substrate is then bonded to the second substrate such that the layer of the first material on the first substrate is adjacent the plurality of slots on the second substrate to define a plurality of enclosed nanofluidic channels therethrough.

Abstract translation: 形成纳流体封闭通道的方法包括提供具有设置在其上的第一材料层的第一基底。 使用纳米光刻，蚀刻或其它公开的技术沿着第二基板形成多个纳米级槽。 然后将第一衬底接合到第二衬底，使得第一衬底上的第一材料层与第二衬底上的多个槽相邻以限定穿过其中的多个封闭的纳米流体通道。

公开(公告)号：US09934973B2

公开(公告)日：2018-04-03

申请号：US15538564

申请日：2015-12-22

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Stefan Landis ,  Nicolas Posseme ,  Sebastien Barnola ,  Thibaut David ,  Lamia Nouri

IPC: H01L21/266 ,  C23C14/48 ,  C23C14/04 ,  H01L21/3065 ,  H01L21/306 ,  B81C1/00 ,  H01L33/00 ,  H01L33/22 ,  H01L31/18 ,  H01L31/0392 ,  G03F7/00

CPC classification number: H01L21/266 ,  B81C1/00103 ,  B81C1/0046 ,  B81C1/00587 ,  B81C2201/0136 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  C23C14/042 ,  C23C14/48 ,  G03F7/0002 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31144 ,  H01L31/02363 ,  H01L31/0392 ,  H01L31/1852 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  Y02E10/50

Abstract: The invention relates in particular to a method for producing subsequent patterns in an underlying layer (120), the method comprising at least one step of producing prior patterns in a carbon imprintable layer (110) on top of the underlying layer (120), the production of the prior patterns involving nanoimprinting of the imprintable layer (110) and leave in place a continuous layer formed by the imprintable layer (110) and covering the underlying layer (120), characterized in that it comprises the following step: at least one step of modifying the underlying layer (120) via ion implantation (421) in the underlying layer (120), the implantation (421) being carried out through the imprintable layer (110) comprising the subsequent patterns, the parameters of the implantation (421) being chosen in such a way as to form, in the underlying layer (120), implanted zones (122) and non-implanted zones, the non-Implanted zones defining the subsequent patterns and having a geometry that is dependent on the prior patterns.

公开(公告)号：US20170372904A1

公开(公告)日：2017-12-28

申请号：US15538564

申请日：2015-12-22

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

Inventor： Stephan LANDIS ,  Nicolas POSSEME ,  Sebastien BARNOLA ,  Thibaut DAVID ,  Lamia NOURI

IPC: H01L21/266 ,  C23C14/04 ,  C23C14/48 ,  H01L21/306 ,  H01L21/3065 ,  H01L33/22 ,  G03F7/00 ,  H01L31/0392 ,  H01L31/18 ,  H01L33/00 ,  B81C1/00

CPC classification number: H01L21/266 ,  B81C1/00103 ,  B81C1/0046 ,  B81C1/00587 ,  B81C2201/0136 ,  B81C2201/0153 ,  B82Y10/00 ,  B82Y40/00 ,  C23C14/042 ,  C23C14/48 ,  G03F7/0002 ,  H01L21/30604 ,  H01L21/30608 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/31111 ,  H01L21/31144 ,  H01L31/02363 ,  H01L31/0392 ,  H01L31/1852 ,  H01L33/007 ,  H01L33/20 ,  H01L33/22 ,  Y02E10/50

Abstract: The invention relates in particular to a method for producing subsequent patterns in an underlying layer (120), the method comprising at least one step of producing prior patterns in a carbon imprintable layer (110) on top of the underlying layer (120), the production of the prior patterns involving nanoimprinting of the imprintable layer (110) and leave in place a continuous layer formed by the imprintable layer (110) and covering the underlying layer (120), characterized in that it comprises the following step: at least one step of modifying the underlying layer (120) via ion implantation (421) in the underlying layer (120), the implantation (421) being carried out through the imprintable layer (110) comprising the subsequent patterns, the parameters of the implantation (421) being chosen in such a way as to form, in the underlying layer (120), implanted zones (122) and non-implanted zones, the non-Implanted zones defining the subsequent patterns and having a geometry that is dependent on the prior patterns.

公开(公告)号：US20150239172A1

公开(公告)日：2015-08-27

申请号：US14431348

申请日：2013-09-27

Applicant: NORTH CAROLINA STATE UNIVERSITY

Inventor： Thomas A. Dow ,  Erik Zdanowicz ,  Alexander Sohn ,  Ron Scattergood ,  William John Nowak, JR.

IPC: B29C59/02 ,  B29C33/42 ,  H01L31/0232 ,  B29C33/38

CPC classification number: B29C59/022 ,  B29C33/3878 ,  B29C33/424 ,  B29C2059/023 ,  B29K2995/0018 ,  B29K2995/0093 ,  B29L2011/00 ,  B29L2031/7562 ,  B81C99/0025 ,  B81C2201/0153 ,  B82Y40/00 ,  H01L31/02325

Abstract: The subject matter described herein relates to methods and systems for fast imprinting of nanometer scale features in a workpiece. According to one aspect, a system for producing nanometer scale features in a workpiece is disclosed. The system includes a die having a surface with at least one nanometer scale feature located thereon. A first actuator moves the die with respect to the workpiece such that the at least one nanometer scale feature impacts the workpiece and imprints a corresponding at least one nanometer scale feature in the workpiece.

Abstract translation: 本文所述的主题涉及用于在工件中快速压印纳米尺度特征的方法和系统。 根据一个方面，公开了一种用于在工件中制造纳米尺度特征的系统。 该系统包括具有位于其上的具有至少一个纳米级特征的表面的管芯。 第一致动器相对于工件移动模具，使得至少一个纳米尺度特征冲击工件并在工件中压印相应的至少一个纳米尺度特征。