公开(公告)号：US07917241B2

公开(公告)日：2011-03-29

申请号：US11832198

申请日：2007-08-01

Applicant: Nicolaus J. Hofmeester ,  Steven P. Caliendo

Inventor： Nicolaus J. Hofmeester ,  Steven P. Caliendo

IPC: G06F19/00 ,  C23F1/00

CPC classification number: H01J37/304 ,  C23C14/221 ,  C23C14/545 ,  C23C16/047 ,  C23C16/513 ,  C23C16/52 ,  H01J37/3023 ,  H01J37/3056 ,  H01J2237/0812 ,  H01J2237/30416 ,  H01J2237/30472 ,  H01J2237/3146 ,  H01J2237/3151

Abstract: A method and system of location specific processing on a plurality of substrates is described. The method comprises measuring metrology data for the plurality of substrates. Thereafter, the method comprises computing correction data for a first substrate using the metrology data, followed by computing correction data for a second substrate using the metrology data. While computing the correction data for a second substrate, the method comprises applying the correction data for a first substrate to the first substrate using a gas cluster ion beam (GCIB).

Abstract translation: 描述了在多个基板上的位置特定处理的方法和系统。 该方法包括测量多个基板的测量数据。 此后，该方法包括使用测量数据计算第一衬底的校正数据，随后使用度量数据计算第二衬底的校正数据。 在计算第二衬底的校正数据的同时，该方法包括使用气体簇离子束（GCIB）将第一衬底的校正数据应用于第一衬底。

公开(公告)号：US07883999B2

公开(公告)日：2011-02-08

申请号：US12020094

申请日：2008-01-25

Applicant: Yan Shao ,  Thomas G. Tetreault ,  John J. Hautala

Inventor： Yan Shao ,  Thomas G. Tetreault ,  John J. Hautala

IPC: H01L21/265

CPC classification number: H01L21/26513 ,  H01J2237/0812 ,  H01L21/26506 ,  H01L21/26566

Abstract: A method for infusing material below the surface of a substrate is described. The method comprises modifying a surface condition of a surface on a substrate to produce a modified surface layer, and thereafter, infusing material into the modified surface in the substrate by exposing the substrate to a gas cluster ion beam (GCIB) comprising the material.

Abstract translation: 描述了在衬底表面下方注入材料的方法。 该方法包括改变基板上的表面的表面状态以产生改性表面层，然后通过将基板暴露于包含该材料的气体簇离子束（GCIB）而将材料注入到基板中的改性表面中。

公开(公告)号：US20110029068A1

公开(公告)日：2011-02-03

申请号：US12851161

申请日：2010-08-05

Applicant: Sean R. Kirkpatrick ,  Richard C. Svrluga

Inventor： Sean R. Kirkpatrick ,  Richard C. Svrluga

IPC: A61L27/54 ,  B05D3/06 ,  C23C14/02 ,  G21G5/00

CPC classification number: C23C14/022 ,  A61F2/82 ,  A61F2250/0067 ,  C23C14/221 ,  C23C14/505 ,  H01J37/3171 ,  H01J2237/0812

Abstract: Irradiation of a surface of a material with a gas cluster ion beam modifies the wettability of the surface. The wettability may be increased or decreased dependent on the characteristics of the gas cluster ion beam. Improvements in wettability of a surface by the invention exceed those obtained by conventional plasma cleaning or etching. The improvements may be applied to surfaces of medical devices, such as vascular stents for example, and may be used to enable better wetting of medical device surfaces with liquid drugs in preparation for adhesion of the drug to the device surfaces. A mask may be used to limit processing to a portion of the surface. Medical devices formed by using the methods of the invention are disclosed.

Abstract translation: 用气体簇离子束照射材料的表面改变了表面的润湿性。 根据气体簇离子束的特性，润湿性可以增加或减少。 通过本发明的表面润湿性的改善超过了通过常规等离子体清洗或蚀刻获得的那些。 这些改进可以应用于诸如血管支架的医疗装置的表面，并且可以用于使液体药物更好地润湿医疗装置表面，以准备将药物粘附到装置表面。 可以使用掩模来将处理限制到表面的一部分。 公开了通过使用本发明的方法形成的医疗装置。

公开(公告)号：US20100304282A1

公开(公告)日：2010-12-02

申请号：US12815091

申请日：2010-06-14

Applicant: Koji OTSUKA ,  Kenji OKAMURA

Inventor： Koji OTSUKA ,  Kenji OKAMURA

IPC: G03F1/00

CPC classification number: G01B9/02065 ,  C03C15/02 ,  C03C19/00 ,  C03C23/006 ,  C03C2204/08 ,  G01B9/02057 ,  G01B9/0209 ,  G01B11/30 ,  G03F1/60 ,  H01J2237/0812 ,  Y10T428/24355

Abstract: A glass substrate obtained by a method including measuring flatness of a glass substrate surface and measuring concentration distribution of dopant in the substrate. Processing conditions of the surface are set up for each site of the substrate based on results from the measuring the flatness and the measuring the distribution, and the finishing is carried out while keeping an angle formed by normal line of the substrate and incident beam onto the surface at from 30 to 89°. The surface is subjected to second finishing for improving an RMS in a high spatial frequency region. The surface after the second finishing satisfies the requirements: an RMS slope in the region that 5 μm

Abstract translation: 一种玻璃基板，其通过包括测量玻璃基板表面的平坦度和测量基板中掺杂剂的浓度分布的方法获得。 基于测量平面度和测量分布的结果，为基板的每个部位设置表面的加工条件，并且在将基板和入射光束的法线形成的角度保持在 表面为30〜89°。 对表面进行第二次精加工以改善高空间频率区域中的均方根。 第二次修整后的表面满足以下要求：在5μm（λ）（空间波长）<1mm的区域内的RMS斜率不大于0.5mRad，并且在250nm <λ（空间波长）的区域中的RMS斜率， <5μm不大于0.6mRad。

公开(公告)号：US20100243920A1

公开(公告)日：2010-09-30

申请号：US12415867

申请日：2009-03-31

Applicant: John J. Hautala ,  Nathan E. Baxter ,  Koji Yamashita

Inventor： John J. Hautala ,  Nathan E. Baxter ,  Koji Yamashita

IPC: A61N5/00 ,  H01J27/00

CPC classification number: H01L21/2633 ,  H01J37/08 ,  H01J37/317 ,  H01J2237/022 ,  H01J2237/0812

Abstract: A method of enhancing a material layer on a substrate is described. The method comprises establishing a gas cluster ion beam (GCIB), and treating a host region of the substrate by exposing the host region of the substrate to the GCIB. The treatment with the GCIB may selectively remove an undesirable specie and/or introduce a desirable specie to the host region.

Abstract translation: 描述了增强衬底上的材料层的方法。 该方法包括建立气体簇离子束（GCIB），以及通过将基板的主体区域暴露于GCIB来处理基板的主体区域。 用GCIB处理可以选择性地除去不需要的物质和/或向宿主区域引入所需的物质。

公开(公告)号：US20100227523A1

公开(公告)日：2010-09-09

申请号：US12722471

申请日：2010-03-11

Applicant: Joseph Khoury ,  Laurence B. Tarrant ,  Sean R. Kirkpatrick ,  Richard C. Svrluga

Inventor： Joseph Khoury ,  Laurence B. Tarrant ,  Sean R. Kirkpatrick ,  Richard C. Svrluga

IPC: D04H13/00 ,  H01J37/317 ,  A61F2/02 ,  C22C14/00 ,  C03C3/00 ,  C08F110/06 ,  C08F112/08 ,  C01B33/12

CPC classification number: G06F17/3074 ,  A61B2017/00969 ,  A61F2/0077 ,  A61F2/30767 ,  B29C59/16 ,  B29C2035/0872 ,  D06M10/00 ,  D06M10/008 ,  D06M10/04 ,  G06F16/60 ,  H01J2237/0812 ,  H01J2237/2505 ,  Y10T442/60

Abstract: The invention provide for a method of improving bioactivity of a surface of an object. The invention further provides for a method of preparing an object for medical implantation. The invention even further provide for an article made by a method comprising the steps of forming a gas-cluster ion-beam in a reduced-pressure chamber, introducing the article into the reduced-pressure chamber, and irradiating at least a portion of the surface of the object with the gas-cluster ion-beam. The invention still further provides for an article for medical or surgical implantation made by a method comprising selecting at least a portion of a surface of the object for increased bioactivity, forming a gas-cluster ion-beam in a reduced-pressure chamber, introducing the object into the reduced-pressure chamber, and irradiating the selected at least a portion with the gas-cluster ion-beam to increase the bioactivity of the at least a portion.

Abstract translation: 本发明提供了改善物体表面生物活性的方法。 本发明还提供了一种制备用于医学植入的物体的方法。 本发明甚至进一步提供了一种通过包括以下步骤的方法制备的制品：在减压室中形成气体簇离子束，将制品引入减压室中，并且照射表面的至少一部分 的物体与气体簇离子束。 本发明还进一步提供一种用于医疗或手术植入的制品，该制品通过包括选择物体的表面的至少一部分以增加生物活性，在减压室中形成气体簇离子束，引入 物体进入减压室，并且用气体簇离子束照射所选择的至少一部分以增加至少一部分的生物活性。

公开(公告)号：US20100226897A1

公开(公告)日：2010-09-09

申请号：US12722126

申请日：2010-03-11

Applicant: Joseph Khoury ,  Laurence B. Tarrant ,  Sean R. Kirkpatrick ,  Richard C. Svrluga

Inventor： Joseph Khoury ,  Laurence B. Tarrant ,  Sean R. Kirkpatrick ,  Richard C. Svrluga

IPC: A61K35/12

CPC classification number: A61F2/30771 ,  A61B2017/00969 ,  A61F2/0077 ,  A61F2/08 ,  A61F2/30767 ,  A61F2/4644 ,  A61L27/3604 ,  A61L27/3691 ,  A61L27/38 ,  A61L2430/10 ,  A61L2430/40 ,  H01J2237/0812 ,  H01J2237/20207 ,  H01J2237/20214

Abstract: The invention provides methods for surgical grafting of a tissue. The method comprises the steps of explanting a graft tissue from a donor, irradiating at least a first portion of the graft tissue with an ion beam, and surgically grafting the graft tissue into a recipient.

Abstract translation: 本发明提供了用于组织外科移植的方法。 该方法包括以下步骤：从供体移出移植物组织，用离子束照射移植组织的至少第一部分，以及将移植物组织手术移植到受体中。

公开(公告)号：US20100217414A1

公开(公告)日：2010-08-26

申请号：US12772471

申请日：2010-05-03

Applicant: Glenn Norman Sanders ,  Howard Glenn Stark

Inventor： Glenn Norman Sanders ,  Howard Glenn Stark

IPC: G06F17/00 ,  H04H40/00

CPC classification number: G06F17/3074 ,  A61B2017/00969 ,  A61F2/0077 ,  A61F2/30767 ,  B29C59/16 ,  B29C2035/0872 ,  D06M10/00 ,  D06M10/008 ,  D06M10/04 ,  G08C25/02 ,  H01J2237/0812 ,  H01J2237/2505 ,  Y10T442/60

Abstract: Disclosed are systems and methods for wirelessly recording multi-track audio files without the data corruption or loss of data that typically occurs with wireless data transmission. In some aspects of the present invention, each performer is equipped with a local audio device capable of locally recording the respective performer's audio while also transmitting it to a master recorder. The locally recorded audio may then be used to repair or replace any audio lost or corrupted during transmission to the master recorder. Such repair or replacement may be performed electronically or via playback of the locally recorded audio. In other aspects of the present invention, a master recorder is not required since all locally recorded audio may be combined or otherwise processed post-recording. Locally recorded audio may include identifiers to aid in post-recording identification of such audio. A multi-memory unit is also provided to facilitate manipulation and processing of audio files.

Abstract translation: 公开了用于无数据记录多轨音频文件的系统和方法，而没有数据损坏或通常在无线数据传输时出现的数据丢失。 在本发明的一些方面，每个执行者配备有本地音频设备，其能够本地记录相应的演奏者的音频，同时也将其发送到主记录器。 然后可以使用本地记录的音频来修复或替换在传送到主记录器期间丢失或损坏的任何音频。 这种修复或替换可以电子地或通过本地记录的音频的重放进行。 在本发明的其他方面，不需要主记录器，因为所有本地记录的音频可以被组合或以其他方式处理后记录。 本地记录的音频可以包括用于辅助记录这种音频的识别的标识符。 还提供了多存储器单元以便于音频文件的操纵和处理。

公开(公告)号：US07759251B2

公开(公告)日：2010-07-20

申请号：US11143421

申请日：2005-06-02

Applicant: Robert M. Geffken ,  John J. Hautala

Inventor： Robert M. Geffken ,  John J. Hautala

IPC: H01L21/302

CPC classification number: H01L21/31144 ,  H01J2237/0812 ,  H01L21/02046 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/76807 ,  H01L21/76808 ,  H01L21/76814 ,  H01L21/7682 ,  H01L21/76825 ,  H01L21/76831

Abstract: Methods for forming a dual damascene dielectric structure in a porous ultra-low-k (ULK) dielectric material by using gas-cluster ion-beam processing are disclosed. These methods minimize hard-mask layers during dual damascene ULK processing and eliminate hard-masks in the final ULK dual damascene structure. Methods for gas-cluster ion-beam etching, densification, pore sealing and ashing are described that allow simultaneous removal of material and densification of the ULK interfaces. A novel ULK dual damascene structure is disclosed with densified interfaces and no hard-masks.

Abstract translation: 公开了通过使用气体簇离子束处理在多孔超低k（ULK）介电材料中形成双镶嵌介质结构的方法。 这些方法在双镶嵌ULK处理期间使硬掩模层最小化，并在最终的ULK双镶嵌结构中消除硬掩模。 描述了用于气体簇离子束蚀刻，致密化，孔密封和灰化的方法，其允许同时去除材料和ULK界面的致密化。 公开了一种新颖的ULK双镶嵌结构，其具有致密的界面并且没有硬掩模。

公开(公告)号：US07732787B2

公开(公告)日：2010-06-08

申请号：US11647924

申请日：2006-12-29

Applicant: Thomas Neil Horsky

Inventor： Thomas Neil Horsky

IPC: H01J27/00 ,  H05B31/26

CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J27/205 ,  H01J37/08 ,  H01J2237/047 ,  H01J2237/049 ,  H01J2237/063 ,  H01J2237/0812 ,  H01J2237/0815 ,  H01J2237/082 ,  H01J2237/083 ,  H01J2237/0835 ,  H01J2237/31701 ,  H01J2237/31703 ,  H01J2237/31705 ,  H01L21/26513 ,  H01L21/2658 ,  H01L21/823814

Abstract: An ion source is disclosed that is capable of providing ions of decaborane in commercial ion current levels to the ion extraction system of an ion implanter is provided, the ion source comprising an ionization chamber defined by walls enclosing an ionization volume, there being an ion extraction aperture in a side wall of the ionization chamber, arranged to enable the ion current to be extracted from the ionization volume by an extraction system, an electron gun mounted on a support that is outside of and thermally isolated from the walls of the ionization chamber, the ion extraction aperture plate is biased to a negative voltage with respect to the ionization chamber to further increase the drift velocity of the ions, and hence the maximum obtainable current in the resulting ion beam.

Abstract translation: 公开了一种离子源，其能够提供离子注入机的离子提取系统的商业离子电流水平的十硼烷离子，离子源包括由包围电离体积的壁限定的电离室，存在离子提取 电离室的侧壁中的孔径，被布置成能够通过提取系统从离子化体积中提取离子电流，电子枪安装在电离室的外部并与电离室的壁隔离的支撑体上， 离子提取孔板相对于电离室被偏置为负电压，以进一步增加离子的漂移速度，并因此进一步增加所得离子束中的最大可获得电流。