公开(公告)号：US20110088763A1

公开(公告)日：2011-04-21

申请号：US12904902

申请日：2010-10-14

申请人： Hien-Minh Huu Le ,  Mohd Fadzli Anwar Hassan ,  David Tanner ,  Dapeng Wang

发明人： Hien-Minh Huu Le ,  Mohd Fadzli Anwar Hassan ,  David Tanner ,  Dapeng Wang

IPC分类号： H01L31/0232 ,  H01L31/032 ,  C23C14/34

CPC分类号： H01L31/022466 ,  C23C14/0084 ,  C23C14/027 ,  C23C14/086 ,  H01L31/022483 ,  H01L31/0236 ,  H01L31/0368 ,  H01L31/03682 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/056 ,  H01L31/076 ,  H01L31/077 ,  H01L31/1804 ,  H01L31/182 ,  H01L31/1824 ,  H01L31/1884 ,  Y02E10/52 ,  Y02E10/545 ,  Y02E10/546 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

摘要： A method and apparatus for improving efficiency of photovoltaic cells by improving light capture between the photoelectric unit and back reflector is provided. A transition layer is formed at the interface between the photoelectric unit and transmitting conducting layer of the back reflector by adding oxygen, nitrogen, or both to the surface of the photoelectric unit or the interface between the photoelectric unit and the transmitting conducting layer. The transition layer may comprise silicon, oxygen, or nitrogen, and may be silicon oxide, silicon nitride, metal oxide with excess oxygen, metal oxide with nitrogen, or any combination thereof, including bilayers and multi-layers. The sputtering process for forming the transmitting conducting layer may feature at least one of nitrogen and excess oxygen, and may be performed by sputtering at low power, followed by an operation to form the rest of the transmitting conductive layer.

摘要翻译： 提供了一种通过改善光电单元和后反射器之间的光捕获来提高光伏电池效率的方法和装置。 通过向光电单元的表面或光电单元和透射导电层之间的界面添加氧，氮或两者，在光反射器的光电单元和透射导电层之间的界面处形成过渡层。 过渡层可以包括硅，氧或氮，并且可以是氧化硅，氮化硅，具有过量氧的金属氧化物，具有氮的金属氧化物，或其任何组合，包括双层和多层。 用于形成发射导电层的溅射工艺可以具有氮和过量氧中的至少一种，并且可以通过以低功率溅射进行，然后进行操作以形成透射导电层的其余部分。

公开(公告)号：US07644745B2

公开(公告)日：2010-01-12

申请号：US11146763

申请日：2005-06-06

申请人： Hien-Minh Huu Le ,  Akihiro Hosokawa

发明人： Hien-Minh Huu Le ,  Akihiro Hosokawa

IPC分类号： C23C14/35

CPC分类号： C23C14/3407 ,  H01J37/3435 ,  Y10T29/49856 ,  Y10T29/49863 ,  Y10T29/49865 ,  Y10T29/49885

摘要： A target assembly including a plurality of target tiles bonded to a backing plate by adhesive, for example of indium or conductive polymer, filled into recesses in the backing plate formed beneath each of the target tiles. A sole peripheral recess formed as a rectangular close band may be formed inside the tile periphery. Additional recesses may be formed inside the peripheral recess, preferably symmetrically arranged about perpendicular bisectors of rectangular tiles. The depth and width of the recesses may be varied to control the amount of stress and the stress direction.

摘要翻译： 包括通过粘合剂（例如铟或导电聚合物）粘合到背板的多个目标瓦片的目标组件填充到形成在每个目标瓦片下方的背板中的凹部中。 形成为矩形紧密带的唯一周边凹部可以形成在瓷砖周边内。 可以在周边凹部内部形成附加的凹槽，优选地围绕矩形瓦片的垂直平分线对称地布置。 可以改变凹部的深度和宽度以控制应力和应力方向的量。

公开(公告)号：US07485556B2

公开(公告)日：2009-02-03

申请号：US11084450

申请日：2005-03-18

申请人： Jeong Soo Byun ,  Jianxin Lei ,  Lisa Yang ,  Hien-Minh Huu Le

发明人： Jeong Soo Byun ,  Jianxin Lei ,  Lisa Yang ,  Hien-Minh Huu Le

IPC分类号： H01L21/28

CPC分类号： C23C14/165 ,  H01L21/28518 ,  H01L21/2855 ,  H01L29/665 ,  H01L29/78

摘要： A metal silicide layer is formed on silicon-containing features of a substrate in a chamber. A metal film is sputter deposited on the substrate and a portion of the sputter deposited metal film is silicided. In the process, sputtering gas is energized by applying an electrical bias potential across the metal sputtering target and the substrate support to sputter deposit metal from a target onto the substrate. At least a portion of the deposited sputtered metal is silicided by heating the substrate to a silicidation temperature exceeding about 200° C. to form a combined sputtered metal and metal silicide layer on the substrate. The remaining sputtered metal can be silicided by maintaining the substrate at the silicidation temperature to form the metal silicide layer.

摘要翻译： 在室中的衬底的含硅特征上形成金属硅化物层。 金属膜被溅射沉积在衬底上，溅射沉积的金属膜的一部分被硅化。 在该过程中，溅射气体通过在金属溅射靶和衬底支撑件上施加电偏压来激发，以将金属从靶溅射到衬底上。 沉积的溅射金属的至少一部分通过将衬底加热到​​超过约200℃的硅化温度来硅化，以在衬底上形成组合的溅射金属和金属硅化物层。 剩余的溅射金属可以通过将衬底保持在硅化温度下来硅化，形成金属硅化物层。

公开(公告)号：US20080296142A1

公开(公告)日：2008-12-04

申请号：US11754983

申请日：2007-05-29

申请人： HIEN-MINH HUU LE ,  BRADLEY O. STIMSON ,  JOHN M. WHITE

发明人： HIEN-MINH HUU LE ,  BRADLEY O. STIMSON ,  JOHN M. WHITE

IPC分类号： C23C14/00 ,  C25B5/00

CPC分类号： C23C14/3407 ,  C23C14/35 ,  H01J37/3408 ,  H01J37/3455

摘要： A method and apparatus for uniformly eroding a sputtering target is disclosed. As a racetrack shaped magnetic field formed by a magnetron moves across the sputtering surface of the sputtering target, one or more magnets within the magnetron may swing or pivot relative to other magnets within the magnetron to reduce magnetic field pinching at the turns in the racetrack shaped magnetic field. The swinging or pivoting magnets alter the location on the magnetic field at a turn in the racetrack shape where the coordinate of the magnetic field perpendicular to the sputtering surface equals zero. By altering the location, sputtering target erosion uniformity may be increased.

摘要翻译： 公开了一种用于均匀侵蚀溅射靶的方法和装置。 当由磁控管形成的赛道形状的磁场移动穿过溅射靶的溅射表面时，磁控管内的一个或多个磁体可以相对于磁控管内的其它磁体摆动或枢转，以减少在跑道形状的转弯处的磁场夹紧 磁场。 摆动或旋转的磁体在跑道转弯处改变磁场上的位置，其中垂直于溅射表面的磁场的坐标等于零。 通过改变位置，可以增加溅射靶侵蚀均匀性。

公开(公告)号：US07316763B2

公开(公告)日：2008-01-08

申请号：US11137262

申请日：2005-05-24

申请人： Akihiro Hosokawa ,  Hien-Minh Huu Le

发明人： Akihiro Hosokawa ,  Hien-Minh Huu Le

IPC分类号： C23C14/35

CPC分类号： C23C14/3407

摘要： A target assembly composed of multiple target tiles bonded in an array to a backing plate of another material. The edges of the tile within the interior of the array are formed with complementary beveled edges to form slanted gaps between the tiles. The gaps may slant at an angle of between 10° and 55°, preferably 15° and 45°, with respect to the target normal. The facing sides of tiles may be roughened by bead blasting, for both perpendicular and sloping gaps. The area of the backing plate underlying the gap may be roughened or may coated or overlain with a region of the material of the target, for both perpendicular and sloping gaps.

摘要翻译： 由多个靶阵列组成的目标组件，其以阵列的形式结合到另一材料的背板上。 在阵列内部的瓦片的边缘形成有互补的斜边以在瓦片之间形成倾斜的间隙。 间隙可以相对于目标法线在10°至55°之间，优选15°和45°的角度倾斜。 对于垂直和倾斜的间隙，瓷砖的面对侧可以通过珠粒喷砂粗糙化。 对于垂直和倾斜的间隙，在间隙下面的背板的区域可以被粗糙化或者可以涂覆或覆盖靶材料的区域。

公开(公告)号：US08784934B2

公开(公告)日：2014-07-22

申请号：US13305550

申请日：2011-11-28

申请人： Mohd Fadzli Anwar Hassan ,  Richard Blacker ,  Guowen Ding ,  Muhammad Imran ,  Jingyu Lao ,  Hien Minh Huu Le ,  Yiwei Lu ,  Zhi-Wen Sun

发明人： Mohd Fadzli Anwar Hassan ,  Richard Blacker ,  Guowen Ding ,  Muhammad Imran ,  Jingyu Lao ,  Hien Minh Huu Le ,  Yiwei Lu ,  Zhi-Wen Sun

IPC分类号： B05D5/06

CPC分类号： C03C17/366 ,  C03C17/2453 ,  C03C17/36 ,  C03C17/3618 ,  C03C17/3642 ,  C23C14/08 ,  C23C28/32 ,  C23C28/345 ,  H01B3/10

摘要： A transparent dielectric composition comprising tin, oxygen and one of aluminum or magnesium with preferably higher than 15% by weight of aluminum or magnesium offers improved thermal stability over tin oxide with respect to appearance and optical properties under high temperature processes. For example, upon a heat treatment at temperatures higher than 500 C, changes in color and index of refraction of the present transparent dielectric composition are noticeably less than those of tin oxide films of comparable thickness. The transparent dielectric composition can be used in high transmittance, low emissivity coated panels, providing thermal stability so that there are no significant changes in the coating optical and structural properties, such as visible transmission, IR reflectance, microscopic morphological properties, color appearance, and haze characteristics, of the as-coated and heated treated products.

摘要翻译： 包含锡，氧和铝或镁中的一种优选高于15重量％的铝或镁的透明电介质组合物相对于在高温过程下的外观和光学性质提供了比氧化锡更好的热稳定性。 例如，当在高于500℃的温度下进行热处理时，本发明透明电介质组合物的颜色变化和折射率显着小于具有相当厚度的氧化锡膜的变化。 透明电介质组合物可用于高透光率，低发射率涂层面板，提供热稳定性，使得涂层的光学和结构性能如可见透射率，IR反射率，微观形态特性，颜色外观和 涂层和加热处理产品的雾度特性。

公开(公告)号：US20130136932A1

公开(公告)日：2013-05-30

申请号：US13305550

申请日：2011-11-28

申请人： Mohd Fadzli Anwar Hassan ,  Richard Blacker ,  Guowen Ding ,  Muhammad Imran ,  Jingyu Lao ,  Hien Minh Huu Le ,  Yiwei Lu ,  Zhi-Wen Sun

发明人： Mohd Fadzli Anwar Hassan ,  Richard Blacker ,  Guowen Ding ,  Muhammad Imran ,  Jingyu Lao ,  Hien Minh Huu Le ,  Yiwei Lu ,  Zhi-Wen Sun

IPC分类号： B32B17/06 ,  B32B15/04 ,  C09K3/00 ,  C03C17/23 ,  B05D3/02 ,  C03C17/06 ,  B32B9/00 ,  B05D5/06

CPC分类号： C03C17/366 ,  C03C17/2453 ,  C03C17/36 ,  C03C17/3618 ,  C03C17/3642 ,  C23C14/08 ,  C23C28/32 ,  C23C28/345 ,  H01B3/10

摘要： A transparent dielectric composition comprising tin, oxygen and one of aluminum or magnesium with preferably higher than 15% by weight of aluminum or magnesium offers improved thermal stability over tin oxide with respect to appearance and optical properties under high temperature processes. For example, upon a heat treatment at temperatures higher than 500 C, changes in color and index of refraction of the present transparent dielectric composition are noticeably less than those of tin oxide films of comparable thickness. The transparent dielectric composition can be used in high transmittance, low emissivity coated panels, providing thermal stability so that there are no significant changes in the coating optical and structural properties, such as visible transmission, IR reflectance, microscopic morphological properties, color appearance, and haze characteristics, of the as-coated and heated treated products.

公开(公告)号：US08394659B1

公开(公告)日：2013-03-12

申请号：US13624406

申请日：2012-09-21

申请人： Guowen Ding ,  Minh Huu Le ,  Guizhen Zhang

发明人： Guowen Ding ,  Minh Huu Le ,  Guizhen Zhang

IPC分类号： H01L21/00

CPC分类号： H01L31/0324 ,  C23C14/024 ,  C23C14/0641 ,  C23C14/5866 ,  H01L21/02422 ,  H01L21/02439 ,  H01L21/02485 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/02521 ,  H01L21/02568 ,  H01L21/02631 ,  H01L31/032 ,  H01L31/072 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

摘要： Methods for forming Cu—In—Ga—N (CIGN) layers for use in TFPV solar panels are described using reactive PVD deposition in a nitrogen containing atmosphere. In some embodiments, the CIGN layers can be used as an absorber layer and eliminate the need of a selenization step. In some embodiments, the CIGN layers can be used as a protective layer to decrease the sensitivity of the CIG layer to oxygen or moisture before the selenization step. In some embodiments, the CIGN layers can be used as an adhesion layer to improve the adhesion between the back contact layer and the absorber layer.

摘要翻译： 在含氮气氛中使用反应性PVD沉积描述了用于TFPV太阳能电池板中形成Cu-In-Ga-N（CIGN）层的方法。 在一些实施方案中，CIGN层可以用作吸收层，并且不需要硒化步骤。 在一些实施方案中，CIGN层可用作保护层，以在硒化步骤之前降低CIG层对氧或水分的敏感性。 在一些实施方案中，CIGN层可以用作粘合层以改善背接触层和吸收层之间的粘附。

公开(公告)号：US08318589B2

公开(公告)日：2012-11-27

申请号：US12748780

申请日：2010-03-29

申请人： Valery V. Komin ,  Hien-Minh Huu Le ,  David Tanner ,  James S. Papanu ,  Philip A. Greene ,  Suresh M. Shrauti ,  Roman Gouk ,  Steven Verhaverbeke

发明人： Valery V. Komin ,  Hien-Minh Huu Le ,  David Tanner ,  James S. Papanu ,  Philip A. Greene ,  Suresh M. Shrauti ,  Roman Gouk ,  Steven Verhaverbeke

IPC分类号： H01L21/20

CPC分类号： C23C14/086 ,  C23C14/5806 ,  C23C14/5873 ,  H01L31/022466 ,  H01L31/0236 ,  H01L31/02366 ,  H01L31/03682 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/075 ,  H01L31/077 ,  H01L31/1864 ,  H01L31/1884 ,  Y02E10/52 ,  Y02E10/545 ,  Y02E10/546 ,  Y02E10/548 ,  Y02P70/521

摘要： Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.

摘要翻译： 本文公开的实施例通常涉及在衬底上沉积透明导电氧化物层的工艺。 透明氧化物层有时沉积在衬底上，以供以后用于太阳能电池器件中。 可以通过冷溅射工艺沉积透明导电氧化物层。 换句话说，在溅射过程中，在处理室中点燃等离子体，其自然地加热基板。 在诸如从感受器的沉积期间不会向衬底提供额外的热量。 在沉积透明导电氧化物层之后，可以以任何顺序对衬底进行退火和蚀刻，以对透明导电氧化物层进行纹理化。 为了调整纹理的形状，可以使用不同的湿蚀刻化学物质。 可以使用不同的蚀刻化学物质来形成透明导电氧化物的表面和蚀刻速率。

公开(公告)号：US20120196399A1

公开(公告)日：2012-08-02

申请号：US13269713

申请日：2011-10-10

申请人： Guowen Ding ,  Hien Minh Huu Le ,  Guizhen Zhang

发明人： Guowen Ding ,  Hien Minh Huu Le ,  Guizhen Zhang

IPC分类号： H01L31/18

CPC分类号： H01L31/0324 ,  C23C14/024 ,  C23C14/0641 ,  C23C14/5866 ,  H01L21/02422 ,  H01L21/02439 ,  H01L21/02485 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/02521 ,  H01L21/02568 ,  H01L21/02631 ,  H01L31/032 ,  H01L31/072 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

摘要： Methods for forming Cu—In—Ga—N (CIGN) layers for use in TFPV solar panels are described using reactive PVD deposition in a nitrogen containing atmosphere. In some embodiments, the CIGN layers can be used as an absorber layer and eliminate the need of a selenization step. In some embodiments, the CIGN layers can be used as a protective layer to decrease the sensitivity of the CIG layer to oxygen or moisture before the selenization step. In some embodiments, the CIGN layers can be used as an adhesion layer to improve the adhesion between the back contact layer and the absorber layer.

摘要翻译： 在含氮气氛中使用反应性PVD沉积描述了用于TFPV太阳能电池板中形成Cu-In-Ga-N（CIGN）层的方法。 在一些实施方案中，CIGN层可以用作吸收层，并且不需要硒化步骤。 在一些实施方案中，CIGN层可用作保护层，以在硒化步骤之前降低CIG层对氧或水分的敏感性。 在一些实施方案中，CIGN层可以用作粘合层以改善背接触层和吸收层之间的粘附。