公开(公告)号：US20180190616A1

公开(公告)日：2018-07-05

申请号：US15406589

申请日：2017-01-13

Applicant: STMICROELECTRONICS PTE LTD

Inventor： Jian ZHOU

IPC: H01L25/065 ,  H01L25/00 ,  H01L23/31

CPC classification number: H01L25/0655 ,  H01L21/50 ,  H01L23/10 ,  H01L23/3121 ,  H01L25/50

Abstract: A package packaged with a cap. The package features trenches, through holes, and a non-conductive coupling element forming a locking mechanism integrated embedded or integrated within a substrate. The package has a cap coupled to the non-conductive coupling element through ultrasonic plastic welding. The package protects the dice from an outside environment or external stresses or both. A method is desired to form package to reduce glue overflow defects in the package. Fabrication of the package comprises drilling holes in a substrate; forming trenches in the substrate; forming a non-conductive coupling element in the through holes and the trenches to form a locking mechanism; allowing the non-conductive coupling element to harden and cure; coupling a die or dice to the substrate; and coupling a cap to the non-conductive coupling element to protect the die or dice from an outside environment or external stresses or both.

公开(公告)号：US20180156747A1

公开(公告)日：2018-06-07

申请号：US15367081

申请日：2016-12-01

Applicant: STMICROELECTRONICS PTE LTD

Inventor： Olivier LE NEEL ,  Alexandre LE ROCH ,  Ayoub LAHLALIA ,  Ravi SHANKAR

IPC: G01N27/18 ,  G01N33/00

CPC classification number: G01N27/18 ,  G01N33/0047

Abstract: The present disclosure is directed to a gas sensor that includes an active sensor area that is exposed to an environment for detection of elements. The gas sensor may be an air quality sensor that can be fixed in position or carried by a user. The gas sensor includes a heater formed above chamber. The gas sensor includes an active sensor layer above the heater that forms the active sensor area. The gas sensor can include a passive conductive layer, such as a hotplate that further conducts and distributes heat from the heater to the active sensor area. The heater can include a plurality of extensions. The heater can also include a first conductive layer and a second conductive layer on the first conductive layer where the second conductive layer includes a plurality of openings to increase an amount of heat and to more evenly distribute heat from the heater to the active sensor area.

公开(公告)号：US20180140234A1

公开(公告)日：2018-05-24

申请号：US15873557

申请日：2018-01-17

Applicant: STMICROELECTRONICS PTE LTD

Inventor： Olivier LE NEEL ,  Suman CHERIAN ,  Calvin LEUNG

IPC: A61B5/1473 ,  G01N27/327 ,  A61B5/145 ,  A61B5/1468

CPC classification number: A61B5/1473 ,  A61B5/14532 ,  A61B5/1468 ,  G01N27/3272

Abstract: A universal electrochemical micro-sensor can be used either as a biosensor or an environmental sensor. Because of its small size and flexibility, the micro-sensor is suitable for continuous use to monitor fluids within a live subject, or as an environmental monitor. The micro-sensor can be formed on a reusable glass carrier substrate. A flexible polymer backing, together with a set of electrodes, forms a reservoir that contains an electrolytic fluid chemical reagent. During fabrication, the glass carrier substrate protects the fluid chemical reagent from degradation. A conductive micromesh further contains the reagent while allowing partial exposure to the ambient biological or atmospheric environment. The micromesh density can be altered to accommodate fluid reagents having different viscosities. Flexibility is achieved by attaching a thick polymer tape and peeling away the micro-sensor from the glass carrier substrate. The final structure is thereby transferred to the polymer tape, providing a flexible product.

公开(公告)号：US20180090678A1

公开(公告)日：2018-03-29

申请号：US15783293

申请日：2017-10-13

Applicant: STMicroelectronics Pte Ltd

Inventor： Olivier Le Neel ,  Ravi Shankar

IPC: H01L43/14 ,  H01L43/10 ,  H01L43/06 ,  H01L43/04 ,  H01L21/8234 ,  G01N27/74

CPC classification number: H01L43/14 ,  G01N27/74 ,  H01L21/8234 ,  H01L43/04 ,  H01L43/065 ,  H01L43/10 ,  Y10T29/4913

Abstract: A miniature oxygen sensor makes use of paramagnetic properties of oxygen gas to provide a fast response time, low power consumption, improved accuracy and sensitivity, and superior durability. The miniature oxygen sensor disclosed maintains a sample of ambient air within a micro-channel formed in a semiconductor substrate. O2 molecules segregate in response to an applied magnetic field, thereby establishing a measureable Hall voltage. Oxygen present in the sample of ambient air can be deduced from a change in Hall voltage with variation in the applied magnetic field. The magnetic field can be applied either by an external magnet or by a thin film magnet integrated into a gas sensing cavity within the micro-channel. A differential sensor further includes a reference element containing an unmagnetized control sample. The miniature oxygen sensor is suitable for use as a real-time air quality monitor in consumer products such as smart phones.

公开(公告)号：US20180067074A1

公开(公告)日：2018-03-08

申请号：US15812731

申请日：2017-11-14

Applicant: STMicroelectronics Pte Ltd

Inventor： Jerome Teysseyre ,  Yonggang Jin ,  Suman Cherian

IPC: G01N27/406 ,  G01N27/407 ,  H05K1/18

CPC classification number: G01N27/4065 ,  G01N27/4062 ,  G01N27/4071 ,  G01N27/4077 ,  H05K1/185 ,  H05K2201/09118 ,  H05K2201/10151

Abstract: A compact microelectronic gas sensor module includes electrical contacts formed in such a way that they do not consume real estate on an integrated circuit chip. Using such a design, the package can be miniaturized further. The gas sensor is packaged together with a custom-designed Application Specific Integrated Circuit (ASIC) that provides circuitry for processing sensor signals to identify gas species within a sample under test. In one example, the output signal strength of the sensor is enhanced by providing an additional metal surface area in the form of pillars exposed to an electrolytic gas sensing compound, while reducing the overall package size. In some examples, bottom side contacts are formed on the underside of the substrate on which the gas sensor is formed. Sensor electrodes may be electrically coupled to the ASIC directly, or indirectly by vias.

公开(公告)号：US20180062003A1

公开(公告)日：2018-03-01

申请号：US15340216

申请日：2016-11-01

Applicant: STMICROELECTRONICS PTE LTD

Inventor： Jing-En LUAN ,  Laurent HERARD ,  Yong Jiang LEI

IPC: H01L31/0203 ,  H01L31/12 ,  H01L31/18

CPC classification number: H01L31/0203 ,  G01S7/481 ,  G01S7/4813 ,  G01S17/026 ,  G01S17/46 ,  H01L25/50 ,  H01L31/125 ,  H01L31/153 ,  H01L31/173 ,  H01L31/18

Abstract: One or more embodiments are directed to system in package (SiP) for optical devices, such as proximity sensing or optical ranging devices. One embodiment is directed to an optical sensor package that includes a substrate, a sensor die coupled to the substrate, a light-emitting device coupled to the substrate, and a cap. The cap is positioned around side surfaces of the sensor die and covers at least a portion of the substrate. The cap includes first and second sidewalls, an inner wall having first and second side surfaces and a mounting surface, and a cover in contact with the first and second sidewalls and the inner wall. The first and second side surfaces are transverse to the mounting surface, and the inner wall includes an opening extending into the inner wall from the mounting surface. A first adhesive material is provided on the sensor die and at least partially within the opening, and secures the inner wall to the sensor die.

公开(公告)号：US20180006182A1

公开(公告)日：2018-01-04

申请号：US15199390

申请日：2016-06-30

Applicant: STMICROELECTRONICS PTE LTD

Inventor： Loic Pierre Louis RENARD ,  Cheng-Lay ANG

IPC: H01L31/173 ,  H01S5/022 ,  H01L31/12 ,  H01L31/042 ,  H01G9/20 ,  H01L31/0475 ,  H01L31/047 ,  H01S5/183 ,  H01L31/046

CPC classification number: H01L31/173 ,  G01S7/4813 ,  G01S17/08 ,  H01G9/20 ,  H01L31/0203 ,  H01L31/02366 ,  H01L31/042 ,  H01L31/046 ,  H01L31/047 ,  H01L31/0475 ,  H01L31/125 ,  H01S5/02252 ,  H01S5/183

Abstract: One or more embodiments are directed to system in package (SiP) for optical devices, including proximity sensor packaging. One embodiment is directed to optical sensor that includes a substrate, an image sensor die and a light-emitting device. A first surface of the image sensor die is coupled to the substrate, and a recess is formed extending into the image sensor die from the first surface toward a second surface of the image sensor die. A light transmissive layer is formed in the image sensor die between the recess and the first surface. The optical sensor further includes a light-emitting device that is coupled to the substrate and positioned within the recess formed in the image sensor die.

公开(公告)号：US09831357B2

公开(公告)日：2017-11-28

申请号：US13907280

申请日：2013-05-31

Applicant: STMicroelectronics Pte Ltd. ,  STMicroelectronics R&D Limited

Inventor： Yonggang Jin ,  David Lawson ,  Colin Campbell ,  Anandan Ramasamy

IPC: H01L31/0216 ,  H01L31/02 ,  H01L31/0203 ,  H01L31/0232 ,  H01L31/101

CPC classification number: H01L31/02165 ,  H01L31/02005 ,  H01L31/0203 ,  H01L31/02162 ,  H01L31/02164 ,  H01L31/02327 ,  H01L31/1013 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: Embodiments of the present disclosure are directed to optical packages having a package body that includes a light protection coating on at least one surface of a transparent material. The light protection coating includes one or more openings to allow light to be transmitted to the optical device within the package body. In one embodiment, the light protection coating and the openings allow substantially perpendicular radiation to be directed to the optical device within the package body. In one exemplary embodiment the light protection coating is located on an outer surface of the transparent material. In another embodiment, the light protection coating is located on an inner surface of the transparent material inside of the package body.

公开(公告)号：US09824924B2

公开(公告)日：2017-11-21

申请号：US13853856

申请日：2013-03-29

Applicant: STMicroelectronics Pte Ltd.

Inventor： Kim-Yong Goh ,  Xueren Zhang ,  Yiyi Ma

IPC: H01L23/02 ,  H01L21/78 ,  H01L23/00 ,  B81B7/00 ,  H01L23/053

CPC classification number: H01L21/78 ,  B81B7/0048 ,  H01L23/053 ,  H01L24/13 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/83 ,  H01L2224/13101 ,  H01L2224/16225 ,  H01L2224/27013 ,  H01L2224/29101 ,  H01L2224/29198 ,  H01L2224/32058 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2224/83007 ,  H01L2924/00014 ,  H01L2924/10157 ,  H01L2924/10158 ,  H01L2924/12042 ,  H01L2924/16151 ,  H01L2924/014 ,  H01L2924/00

Abstract: Embodiments are directed to a package that includes an electric device having a recess. In one embodiment, the electric device is a sensor and the recess reduces signal drift of the sensor caused by thermal expansion of the package. In another embodiment, the recess is substantially filled with adhesive material, thus increasing adhesion between the electric device and a substrate of the package while at the same time allowing for lower adhesive fillets.

公开(公告)号：US20170287886A1

公开(公告)日：2017-10-05

申请号：US15087959

申请日：2016-03-31

Applicant: STMicroelectronics PTE LTD

Inventor： David Gani

IPC: H01L25/16 ,  H01L31/167 ,  H01L31/18 ,  G06F3/041 ,  H01L31/02 ,  H01S5/022 ,  H04M1/02 ,  H01L23/48 ,  H01L21/768

CPC classification number: H01L25/167 ,  G01S17/026 ,  G06F3/0416 ,  G06F2203/04105 ,  H01L21/76898 ,  H01L23/481 ,  H01L31/02005 ,  H01L31/167 ,  H01L31/1804 ,  H01L31/186 ,  H01S5/02248 ,  H04M1/026

Abstract: Wafer level proximity sensors are formed by processing a silicon substrate wafer and a silicon cap wafer separately, bonding the cap wafer to the substrate wafer, forming an interconnect structure of through-silicon vias within the substrate, and singulating the bonded wafers to yield individually packaged sensors. The wafer level proximity sensor is smaller than a conventional proximity sensor and can be manufactured using a shorter fabrication process at a lower cost. The proximity sensors are coupled to external components by a signal path that includes the through-silicon vias and a ball grid array formed on a lower surface of the silicon substrate. The design of the wafer level proximity sensor passes more light from the light emitter and more light to the light sensor.