公开(公告)号：US20070145382A1

公开(公告)日：2007-06-28

申请号：US11594758

申请日：2006-11-09

申请人： Pun Jae Choi ,  Sang Yeob Song ,  Suk Youn Hong

发明人： Pun Jae Choi ,  Sang Yeob Song ,  Suk Youn Hong

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L33/24

摘要： A high-efficiency semiconductor light emitting diode and a method for manufacturing the same are provided. The semiconductor LED has high internal quantum efficiency and can reduce the bad effect caused by the crystal defect. In the semiconductor light emitting diode, a conductive substrate has a three-dimensional top surface, and a light-emitting stack structure has a three-dimensional structure and includes an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer, which are sequentially formed on the conductive substrate. A p-electrode is formed on the p-type nitride semiconductor layer, and an n-electrode is formed on a bottom surface of the conductive substrate.

摘要翻译： 提供一种高效半导体发光二极管及其制造方法。 半导体LED具有高的内部量子效率，并且可以减少由晶体缺陷引起的不良影响。 在半导体发光二极管中，导电性基板具有三维顶面，发光叠层结构具有三维结构，并且包括n型氮化物半导体层，有源层和p型 氮化物半导体层，其依次形成在导电基板上。 在p型氮化物半导体层上形成p电极，在导电性基板的底面上形成n电极。

公开(公告)号：US20150084537A1

公开(公告)日：2015-03-26

申请号：US14338225

申请日：2014-07-22

申请人： Pun Jae . CHOI ,  Sang Bum LEE ,  Jin Bock LEE ,  Yu Seung KIM ,  Sang Yeob SONG

发明人： Pun Jae . CHOI ,  Sang Bum LEE ,  Jin Bock LEE ,  Yu Seung KIM ,  Sang Yeob SONG

IPC分类号： H01L25/13 ,  H05B33/08 ,  H01L33/50 ,  H01L33/48 ,  H01L33/38 ,  H01L33/54

CPC分类号： H01L25/13 ,  H01L25/0753 ,  H01L33/002 ,  H01L33/0025 ,  H01L33/0029 ,  H01L33/08 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/387 ,  H01L33/40 ,  H01L33/44 ,  H01L33/486 ,  H01L33/502 ,  H01L33/504 ,  H01L33/507 ,  H01L33/508 ,  H01L33/54 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/49175 ,  H01L2224/8592 ,  H01L2924/0002 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2933/0041 ,  H05B33/0803 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure. An uneven structure is formed on a path of light emitted from the active layer.

公开(公告)号：US08735932B2

公开(公告)日：2014-05-27

申请号：US13253515

申请日：2011-10-05

申请人： Tae-hyung Kim ,  Cheol-soo Sone ,  Jong-in Yang ,  Sang-yeob Song ,  Si-hyuk Lee

发明人： Tae-hyung Kim ,  Cheol-soo Sone ,  Jong-in Yang ,  Sang-yeob Song ,  Si-hyuk Lee

IPC分类号： H01L33/36

CPC分类号： H01L33/38 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0066

摘要： An LED includes a compound semiconductor structure having first and second compound layers and an active layer, first and second electrode layers atop the second compound semiconductor layer and connected to respective compound layers. An insulating layer is coated in regions other than where the first and second electrode layers are located. A conducting adhesive layer is formed atop the non-conductive substrate, connecting the same to the first electrode layer and insulating layer. Formed on one side surface of the non-conductive substrate and adhesive layer is a first electrode connection layer connected to the conducting adhesive layer. A second electrode connection layer formed on another side surface is connected to the second electrode layer. By forming connection layers on respective side surfaces of the light-emitting device, manufacturing costs can be reduced.

摘要翻译： LED包括具有第一和第二化合物层和有源层的化合物半导体结构，位于第二化合物半导体层顶部并连接到各个化合物层的第一和第二电极层。 绝缘层涂覆在不同于第一和第二电极层所在的区域中。 导电性粘合剂层形成在非导电性基板的顶部，将其连接到第一电极层和绝缘层。 形成在非导电性基板的一个侧面上的粘合层是与导电性粘合剂层连接的第一电极连接层。 形成在另一个侧表面上的第二电极连接层连接到第二电极层。 通过在发光装置的相应侧表面上形成连接层，可以降低制造成本。

公开(公告)号：US07872266B2

公开(公告)日：2011-01-18

申请号：US11594758

申请日：2006-11-09

申请人： Pun Jae Choi ,  Sang Yeob Song ,  Suk Youn Hong

发明人： Pun Jae Choi ,  Sang Yeob Song ,  Suk Youn Hong

IPC分类号： H01L27/15

CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L33/24

摘要： A high-efficiency semiconductor light emitting diode and a method for manufacturing the same are provided. The semiconductor LED has high internal quantum efficiency and can reduce the bad effect caused by the crystal defect. In the semiconductor light emitting diode, a conductive substrate has a three-dimensional top surface, and a light-emitting stack structure has a three-dimensional structure and includes an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer, which are sequentially formed on the conductive substrate. A p-electrode is formed on the p-type nitride semiconductor layer, and an n-electrode is formed on a bottom surface of the conductive substrate.

摘要翻译： 提供一种高效半导体发光二极管及其制造方法。 半导体LED具有高的内部量子效率，并且可以减少由晶体缺陷引起的不良影响。 在半导体发光二极管中，导电性基板具有三维顶面，发光叠层结构具有三维结构，并且包括n型氮化物半导体层，有源层和p型 氮化物半导体层，其依次形成在导电基板上。 在p型氮化物半导体层上形成p电极，在导电性基板的底面上形成n电极。

公开(公告)号：US20110008924A1

公开(公告)日：2011-01-13

申请号：US12885882

申请日：2010-09-20

申请人： Jong In YANG ,  Yu Seung KIM ,  Sang Yeob SONG ,  Si Hyuk LEE ,  Tae Hyung KIM

发明人： Jong In YANG ,  Yu Seung KIM ,  Sang Yeob SONG ,  Si Hyuk LEE ,  Tae Hyung KIM

IPC分类号： H01L33/30

CPC分类号： H01L21/3086 ,  H01L21/30612 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/22 ,  H01L33/32

摘要： There is provided a method of forming a pattern on a group III nitride semiconductor substrate. A method of forming a pattern on a group III nitride semiconductor substrate according to an aspect of the invention may include: irradiating a laser beam onto at least one first region for preventing etching in a group III nitride semiconductor substrate; and etching at least one second region exclusive of the first region using the first region irradiated with the laser beam as a mask.

摘要翻译： 提供了在III族氮化物半导体衬底上形成图案的方法。 根据本发明的一个方面的在III族氮化物半导体衬底上形成图案的方法可以包括：将激光束照射到至少一个第一区域以防止III族氮化物半导体衬底中的蚀刻; 以及使用被激光束照射的第一区域作为掩模，蚀刻除了第一区域之外的至少一个第二区域。

公开(公告)号：US20100330717A1

公开(公告)日：2010-12-30

申请号：US12881440

申请日：2010-09-14

申请人： Pun Jae CHOI ,  Sang Yeob Song ,  Suk Youn Hong

发明人： Pun Jae CHOI ,  Sang Yeob Song ,  Suk Youn Hong

IPC分类号： H01L33/38

CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L33/24

摘要： A high-efficiency semiconductor light emitting diode and a method for manufacturing the same are provided. The semiconductor LED has high internal quantum efficiency and can reduce the bad effect caused by the crystal defect. In the semiconductor light emitting diode, a conductive substrate has a three-dimensional top surface, and a light-emitting stack structure has a three-dimensional structure and includes an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer, which are sequentially formed on the conductive substrate. A p-electrode is formed on the p-type nitride semiconductor layer, and an n-electrode is formed on a bottom surface of the conductive substrate.

摘要翻译： 提供一种高效半导体发光二极管及其制造方法。 半导体LED具有高的内部量子效率，并且可以减少由晶体缺陷引起的不良影响。 在半导体发光二极管中，导电性基板具有三维顶面，发光叠层结构具有三维结构，并且包括n型氮化物半导体层，有源层和p型 氮化物半导体层，其依次形成在导电基板上。 在p型氮化物半导体层上形成p电极，在导电性基板的底面上形成n电极。

公开(公告)号：US20090085043A1

公开(公告)日：2009-04-02

申请号：US12210472

申请日：2008-09-15

申请人： Sang Yeob SONG ,  Jin Hyun LEE ,  Yu Seung KIM ,  Kwang Ki CHOI ,  Pun Jae CHOI ,  Hyun Soo KIM ,  Sang Bum LEE

发明人： Sang Yeob SONG ,  Jin Hyun LEE ,  Yu Seung KIM ,  Kwang Ki CHOI ,  Pun Jae CHOI ,  Hyun Soo KIM ,  Sang Bum LEE

IPC分类号： H01L33/00

CPC分类号： H01L33/40 ,  H01L33/32

摘要： Disclosed are a semiconductor light emitting device, which can improve characteristics of the semiconductor light emitting device such as a forward voltage characteristic and a turn-on voltage characteristic, increase light emission efficiency by lowering an input voltage, and increase reliability of the semiconductor light emitting device by a low-voltage operation, and a method of manufacturing the same. The semiconductor light emitting device includes: an n-type GaN semiconductor layer; an active layer formed on a gallium face of the n-type GaN semiconductor layer; a p-type semiconductor layer formed on the active layer; and an n-type electrode formed on a nitrogen face of the n-type GaN semiconductor layer and including a lanthanum (La)-nickel (Ni) alloy.

摘要翻译： 公开了一种半导体发光器件，其能够提高半导体发光器件的特性，例如正向电压特性和导通电压特性，通过降低输入电压来提高发光效率，并提高半导体发光器件的可靠性 器件的低压工作及其制造方法。 半导体发光器件包括：n型GaN半导体层; 形成在所述n型GaN半导体层的镓面上的有源层; 形成在有源层上的p型半导体层; 以及形成在n型GaN半导体层的氮面上并包含镧（La） - 镍（Ni）合金的n型电极。

公开(公告)号：US20080135859A1

公开(公告)日：2008-06-12

申请号：US11987712

申请日：2007-12-04

申请人： Myong Soo Cho ,  Ki Yeol Park ,  Sang Yeob Song ,  Si Hyuk Lee ,  Pun Jae Choi

发明人： Myong Soo Cho ,  Ki Yeol Park ,  Sang Yeob Song ,  Si Hyuk Lee ,  Pun Jae Choi

IPC分类号： H01L33/00

CPC分类号： H01L33/0079

摘要： A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface.

摘要翻译： 一种制造垂直结构发光二极管装置的方法，所述方法包括：在基板上依次形成第一导电型III-V族化合物半导体层，有源层和第二导电型III-V族化合物半导体层 成长 将导电基板键合到第二导电型III-V族化合物半导体层; 从第一导电型III-V族化合物半导体层去除用于生长的衬底; 以及由于去除所述用于生长的衬底而在所述第一导电III-V族化合物半导体层的暴露部分上形成电极，其中所述接合导电衬底包括通过向接合界面施加微波而部分地加热金属接合层，同时带来 金属接合层与接合界面接触。