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    SYSTEMS AND METHODS FOR INTERNAL SURFACE CONDITIONING IN PLASMA PROCESSING EQUIPMENT
    31.
    发明申请
    SYSTEMS AND METHODS FOR INTERNAL SURFACE CONDITIONING IN PLASMA PROCESSING EQUIPMENT 有权
    用于等离子体处理设备内部表面调节的系统和方法

    公开(公告)号：US20160104648A1

    公开(公告)日：2016-04-14

    申请号：US14514213

    申请日：2014-10-14

    Applicant: Applied Materials, Inc.

    Inventor： Soonam Park ,  Yufei Zhu ,  Edwin C. Suarez ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Jiayin Huang

    IPC: H01L21/66 ,  H01L21/67 ,  H01L21/3065

    CPC classification number: H01L21/67069 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/3255 ,  H01J37/32972 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/32137 ,  H01L21/67253 ,  H01L22/26

    Abstract: A method of conditioning internal surfaces of a plasma source includes flowing first source gases into a plasma generation cavity of the plasma source that is enclosed at least in part by the internal surfaces. Upon transmitting power into the plasma generation cavity, the first source gases ignite to form a first plasma, producing first plasma products, portions of which adhere to the internal surfaces. The method further includes flowing the first plasma products out of the plasma generation cavity toward a process chamber where a workpiece is processed by the first plasma products, flowing second source gases into the plasma generation cavity. Upon transmitting power into the plasma generation cavity, the second source gases ignite to form a second plasma, producing second plasma products that at least partially remove the portions of the first plasma products from the internal surfaces.

    Abstract translation: 调节等离子体源的内表面的方法包括将第一源气体流入等离子体源的等离子体产生腔中，所述等离子体源至少部分地被内表面封闭。 在将功率发射到等离子体产生腔中时，第一源气体点燃以形成第一等离子体，产生第一等离子体产物，其部分粘附到内表面。 该方法还包括使第一等离子体产物从等离子体产生腔流出到处理室，其中工件被第一等离子体产物处理，使第二源气体流入等离子体产生腔。 在将功率发射到等离子体产生腔中时，第二源气体点燃以形成第二等离子体，产生至少部分地从内表面去除第一等离子体产物的部分的第二等离子体产物。

    SYSTEMS AND METHODS FOR INTERNAL SURFACE CONDITIONING ASSESSMENT IN PLASMA PROCESSING EQUIPMENT
    32.
    发明申请
    SYSTEMS AND METHODS FOR INTERNAL SURFACE CONDITIONING ASSESSMENT IN PLASMA PROCESSING EQUIPMENT 有权
    等离子体处理设备内部表面调节评估系统与方法

    公开(公告)号：US20160104606A1

    公开(公告)日：2016-04-14

    申请号：US14514222

    申请日：2014-10-14

    Applicant: Applied Materials, Inc.

    Inventor： Soonam Park ,  Yufei Zhu ,  Edwin C. Suarez ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Jiayin Huang

    IPC: H01J37/32 ,  C23C16/50 ,  G01J3/02

    CPC classification number: H01J37/32972 ,  C23C16/4405 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/52 ,  G01J3/0218 ,  G01J3/443 ,  H01J37/32082 ,  H01J37/32532 ,  H01J37/3255

    Abstract: In an embodiment, a plasma source includes a first electrode, configured for transfer of one or more plasma source gases through first perforations therein; an insulator, disposed in contact with the first electrode about a periphery of the first electrode; and a second electrode, disposed with a periphery of the second electrode against the insulator such that the first and second electrodes and the insulator define a plasma generation cavity. The second electrode is configured for movement of plasma products from the plasma generation cavity therethrough toward a process chamber. A power supply provides electrical power across the first and second electrodes to ignite a plasma with the one or more plasma source gases in the plasma generation cavity to produce the plasma products. One of the first electrode, the second electrode and the insulator includes a port that provides an optical signal from the plasma.

    Abstract translation: 在一个实施例中，等离子体源包括构造成通过其中的第一穿孔传送一个或多个等离子体源气体的第一电极; 绝缘体，设置成围绕第一电极的周边与第一电极接触; 以及第二电极，设置有第二电极的周边抵靠绝缘体，使得第一和第二电极和绝缘体限定等离子体产生腔。 第二电极被配置为使等离子体产物从等离子体产生腔通过其中朝向处理室移动。 电源提供穿过第一和第二电极的电力，以使等离子体与等离子体产生腔中的一个或多个等离子体源气体点燃以产生等离子体产物。 第一电极，第二电极和绝缘体之一包括提供来自等离子体的光信号的端口。

    SELECTIVE ETCHING BETWEEN SILICON-AND-GERMANIUM-CONTAINING MATERIALS WITH VARYING GERMANIUM CONCENTRATIONS
    33.
    发明申请
    SELECTIVE ETCHING BETWEEN SILICON-AND-GERMANIUM-CONTAINING MATERIALS WITH VARYING GERMANIUM CONCENTRATIONS 有权

    公开(公告)号：US20250029841A1

    公开(公告)日：2025-01-23

    申请号：US18223156

    申请日：2023-07-18

    Applicant: Applied Materials, Inc.

    Inventor： Jiayin Huang ,  Zihui Li ,  Anchuan Wang ,  Nitin K. Ingle

    IPC: H01L21/3065 ,  H01L21/02

    Abstract: Exemplary semiconductor processing methods may include providing a pre-treatment precursor to a processing region of a semiconductor processing chamber. A first layer of silicon-and-germanium-containing material and a second layer of silicon-and-germanium-containing material may be disposed on a substrate housed within the processing region. A native oxide may be present on the first layer and the second layer. The methods may include contacting the substrate with the pre-treatment precursor to remove the native oxide. The methods may include providing an oxygen-containing precursor to the processing region. The methods may include contacting the substrate with the oxygen-containing precursor to oxidize at least a portion of the second layer. The methods may include providing an etchant precursor to the processing region. The methods may include contacting the substrate with the etchant precursor to selectively etch the first layer of silicon-and-germanium-containing material.

    PROCESSING METHODS TO IMPROVE ETCHED SILICON-AND-GERMANIUM-CONTAINING MATERIAL SURFACE ROUGHNESS
    34.
    发明公开
    PROCESSING METHODS TO IMPROVE ETCHED SILICON-AND-GERMANIUM-CONTAINING MATERIAL SURFACE ROUGHNESS 审中-公开

    公开(公告)号：US20240290623A1

    公开(公告)日：2024-08-29

    申请号：US18115269

    申请日：2023-02-28

    Applicant: Applied Materials, Inc.

    Inventor： Bin Yao ,  Zihui Li ,  Jiayin Huang ,  Anchuan Wang ,  Chia-Ling Kao ,  Nitin K. Ingle

    IPC: H01L21/3065 ,  H01J37/32

    CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J37/32816 ,  H01J2237/182 ,  H01J2237/334

    Abstract: Exemplary semiconductor processing methods may include providing a pre-treatment precursor to a processing a remote plasma system of a semiconductor processing chamber. The methods may include generating plasma effluents of the pre-treatment precursor in the remote plasma system. The methods may include flowing plasma effluents of the pre-treatment precursor to a processing region of the semiconductor processing chamber. A substrate including alternating layers of material may be disposed within the processing region. The alternating layers of material may include a silicon-and-germanium-containing material. The methods may include contacting the substrate with the plasma effluents of the pre-treatment precursor. The methods may include etching the silicon-and-germanium-containing material. The methods may include providing a post-treatment precursor to the processing region. The methods may include contacting the substrate with the post-treatment precursor. The methods may include removing the portion of the silicon-and-germanium-containing material.

    Selective SiN lateral recess
    36.
    发明授权
    Selective SiN lateral recess 有权

    公开(公告)号：US10319603B2

    公开(公告)日：2019-06-11

    申请号：US15792328

    申请日：2017-10-24

    Applicant: Applied Materials, Inc.

    Inventor： Zhijun Chen ,  Jiayin Huang ,  Anchuan Wang ,  Nitin Ingle

    IPC: H01L21/311 ,  H01L21/02

    Abstract: Exemplary methods for laterally etching silicon nitride may include flowing a fluorine-containing precursor and an oxygen-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor and the oxygen-containing precursor. The methods may also include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may also include laterally etching the layers of silicon nitride from sidewalls of the trench while substantially maintaining the layers of silicon oxide. The layers of silicon nitride may be laterally etched less than 10 nm from the sidewalls of the trench.

    Selective SiN lateral recess
    37.
    发明授权
    Selective SiN lateral recess 有权

    公开(公告)号：US10062579B2

    公开(公告)日：2018-08-28

    申请号：US15288898

    申请日：2016-10-07

    Applicant: Applied Materials, Inc.

    Inventor： Zhijun Chen ,  Jiayin Huang ,  Anchuan Wang ,  Nitin Ingle

    IPC: H01L21/311 ,  H01L21/02

    CPC classification number: H01L21/31116 ,  H01L21/0217 ,  H01L21/02323

    Abstract: Exemplary methods for laterally etching silicon nitride may include flowing a fluorine-containing precursor and an oxygen-containing precursor into a remote plasma region of a semiconductor processing chamber. The methods may include forming a plasma within the remote plasma region to generate plasma effluents of the fluorine-containing precursor and the oxygen-containing precursor. The methods may also include flowing the plasma effluents into a processing region of the semiconductor processing chamber. A substrate may be positioned within the processing region, and the substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may also include laterally etching the layers of silicon nitride from sidewalls of the trench while substantially maintaining the layers of silicon oxide. The layers of silicon nitride may be laterally etched less than 10 nm from the sidewalls of the trench.

    Systems and methods for internal surface conditioning in plasma processing equipment
    39.
    发明授权
    Systems and methods for internal surface conditioning in plasma processing equipment 有权
    等离子体处理设备内部表面处理的系统和方法

    公开(公告)号：US09355922B2

    公开(公告)日：2016-05-31

    申请号：US14514213

    申请日：2014-10-14

    Applicant: Applied Materials, Inc.

    Inventor： Soonam Park ,  Yufei Zhu ,  Edwin C. Suarez ,  Nitin K. Ingle ,  Dmitry Lubomirsky ,  Jiayin Huang

    IPC: H01L21/3065 ,  H01L21/66 ,  H01L21/67

    CPC classification number: H01L21/67069 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/3255 ,  H01J37/32972 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/32137 ,  H01L21/67253 ,  H01L22/26

    Abstract: A method of conditioning internal surfaces of a plasma source includes flowing first source gases into a plasma generation cavity of the plasma source that is enclosed at least in part by the internal surfaces. Upon transmitting power into the plasma generation cavity, the first source gases ignite to form a first plasma, producing first plasma products, portions of which adhere to the internal surfaces. The method further includes flowing the first plasma products out of the plasma generation cavity toward a process chamber where a workpiece is processed by the first plasma products, flowing second source gases into the plasma generation cavity. Upon transmitting power into the plasma generation cavity, the second source gases ignite to form a second plasma, producing second plasma products that at least partially remove the portions of the first plasma products from the internal surfaces.

    Abstract translation: 调节等离子体源的内表面的方法包括将第一源气体流入等离子体源的等离子体产生腔中，所述等离子体源至少部分地被内表面封闭。 在将功率发射到等离子体产生腔中时，第一源气体点燃以形成第一等离子体，产生第一等离子体产物，其部分粘附到内表面。 该方法还包括使第一等离子体产物从等离子体产生腔流出到处理室，其中工件被第一等离子体产物处理，使第二源气体流入等离子体产生腔。 在将功率发射到等离子体产生腔中时，第二源气体点燃以形成第二等离子体，产生至少部分地从内表面去除第一等离子体产物的部分的第二等离子体产物。

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