公开(公告)号：US11094573B2

公开(公告)日：2021-08-17

申请号：US16198569

申请日：2018-11-21

Applicant: APPLIED MATERIALS, INC.

Inventor： Jingyu Qiao ,  Qiwei Liang ,  Viachslav Babayan ,  Seshadri Ramaswami ,  Srinivas D. Nemani

IPC: H01L21/683 ,  C23C16/56 ,  C23C16/40

Abstract: Disclosed herein is an electrostatic chuck (ESC) carrier. The ESC carrier may comprise a carrier substrate having a first surface and a second surface opposite the first surface. A first through substrate opening and a second through substrate opening may pass through the carrier substrate from the first surface to the second surface. A first conductor is in the first through substrate opening, and a second conductor is in the second through substrate opening. The ESC carrier may further comprise a first electrode over the first surface of the carrier substrate and electrically coupled to the first conductor, and a second electrode over the first surface of the carrier substrate and electrically coupled to the second conductor. An oxide layer may be formed over the first electrode and the second electrode.

公开(公告)号：US10954594B2

公开(公告)日：2021-03-23

申请号：US14957440

申请日：2015-12-02

Applicant: Applied Materials, Inc.

Inventor： Viachslav Babayan ,  Qiwei Liang ,  Tobin Kaufman-Osborn ,  Ludovic Godet ,  Srinivas D. Nemani

IPC: C23C16/448 ,  C23C16/44 ,  C23C16/458 ,  C23C16/46 ,  H01L21/687 ,  H01L21/67 ,  H01L21/677 ,  C23C16/455

Abstract: The present disclosure generally relate to a semiconductor processing apparatus. In one embodiment, a processing chamber is disclosed herein. The processing chamber includes a chamber body and lid defining an interior volume, the lid configured to support a housing having a cap, a substrate support disposed in the interior volume, a vaporizer coupled to the cap and having an outlet open to the interior volume of the processing chamber, wherein the vaporizer is configured to deliver a precursor gas to a processing region defined between the vaporizer and the substrate support, and a heater disposed adjacent to the vaporizer, wherein the heater is configured to heat the vaporizer.

公开(公告)号：US10675581B2

公开(公告)日：2020-06-09

申请号：US16055929

申请日：2018-08-06

Applicant: Applied Materials, Inc.

Inventor： Adib Khan ,  Qiwei Liang ,  Sultan Malik ,  Srinivas Nemani ,  Rafika Smati ,  Joseph Ng ,  John O'Hehir

IPC: H01L21/673 ,  B01D53/047 ,  B01D53/04 ,  H01L21/67

Abstract: Embodiments of the present disclosure relate to gas abatement apparatus and effluent management. The apparatus described herein include a high pressure process chamber and a containment chamber surrounding the process chamber. A high pressure fluid delivery module is in fluid communication with the high pressure process chamber and is configured to deliver a high pressure fluid to the process chamber. An effluent management module includes a muffler assembly to effluent pressure reduction and a plurality of scrubbers provide for treatment of effluent.

公开(公告)号：US10474033B2

公开(公告)日：2019-11-12

申请号：US15692087

申请日：2017-08-31

Applicant: Applied Materials, Inc.

Inventor： Viachslav Babayan ,  Douglas A. Buchberger, Jr. ,  Qiwei Liang ,  Ludovic Godet ,  Srinivas D. Nemani ,  Daniel J. Woodruff ,  Randy Harris ,  Robert B. Moore

IPC: G03D5/00 ,  G03F7/20 ,  H01L21/687 ,  G03F7/16 ,  G03F7/26 ,  G03F7/38

Abstract: Embodiments described herein relate to methods and apparatus for performing immersion field guided post exposure bake processes. Embodiments of apparatus described herein include a chamber body defining a processing volume. A pedestal may be disposed within the processing volume and a first electrode may be coupled to the pedestal. A moveable stem may extend through the chamber body opposite the pedestal and a second electrode may be coupled to the moveable stem. In certain embodiments, a fluid containment ring may be coupled to the pedestal and a dielectric containment ring may be coupled to the second electrode.

公开(公告)号：US10354843B2

公开(公告)日：2019-07-16

申请号：US15581357

申请日：2017-04-28

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Xinglong Chen ,  Kien Chuc ,  Dmitry Lubomirsky ,  Soonam Park ,  Jang-Gyoo Yang ,  Shankar Venkataraman ,  Toan Tran ,  Kimberly Hinckley ,  Saurabh Garg

IPC: C23C16/455 ,  H01J37/32 ,  B05B1/00 ,  C23C16/452 ,  B05B1/18 ,  C23C16/50 ,  H01L21/67

Abstract: Gas distribution assemblies are described including an annular body, an upper plate, and a lower plate. The upper plate may define a first plurality of apertures, and the lower plate may define a second and third plurality of apertures. The upper and lower plates may be coupled with one another and the annular body such that the first and second apertures produce channels through the gas distribution assemblies, and a volume is defined between the upper and lower plates.

公开(公告)号：US09905400B2

公开(公告)日：2018-02-27

申请号：US14516998

申请日：2014-10-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Michael W. Stowell ,  Qiwei Liang

IPC: H01J37/32

CPC classification number: H01J37/3244 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32119 ,  H01J37/32192 ,  H01J37/32238

Abstract: A gas distribution plate for a plasma reactor has a dielectric front plate and a dielectric back plate bonded together, with gas injection orifices extending through the front plate and gas supply channels in the surface of front plate facing the back plate. The back plate is joined to a heat reflective plate, or the back plate itself is formed of a heat reflective material, such as Beryllium Oxide.

公开(公告)号：US09144147B2

公开(公告)日：2015-09-22

申请号：US13773067

申请日：2013-02-21

Applicant: Applied Materials, Inc.

Inventor： Jang-Gyoo Yang ,  Matthew L. Miller ,  Xinglong Chen ,  Kien N. Chuc ,  Qiwei Liang ,  Shankar Venkataraman ,  Dmitry Lubomirsky

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01J37/32 ,  H05H1/24 ,  C23C16/455

CPC classification number: H05H1/24 ,  C23C16/45565 ,  C23C16/45585 ,  H01J37/32091 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32724 ,  H01L21/02274

Abstract: Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.

Abstract translation: 描述了具有位于处理室内的电容耦合等离子体（CCP）单元的衬底处理系统。 CCP单元可以包括形成在第一电极和第二电极之间的等离子体激发区域。 第一电极可以包括允许第一气体进入等离子体激发区域的第一多个开口，并且第二电极可以包括允许活化气体离开等离子体激发区域的第二多个开口。 该系统还可以包括用于将第一气体供应到CCP单元的第一电极的气体入口和可操作以支撑衬底的基座。 基座位于气体反应区域的下方，活性气体从CCP单元行进。

公开(公告)号：US12288672B2

公开(公告)日：2025-04-29

申请号：US17079783

申请日：2020-10-26

Applicant: APPLIED MATERIALS, INC.

Inventor： Qiwei Liang ,  Srinivas D. Nemani ,  Chentsau Chris Ying ,  Ellie Y. Yieh ,  Erica Chen ,  Nithin Thomas Alex

IPC: H01J37/32 ,  C23C16/513 ,  H01L21/02

Abstract: A method and apparatus for depositing a carbon compound on a substrate includes using an inductively coupled plasma (ICP) chamber with a chamber body, a lid, an interior volume, a pumping apparatus, and a gas delivery system and a pedestal for supporting a substrate disposed within the interior volume of the ICP chamber, the pedestal has an upper portion formed from aluminum nitride with an upper surface that is configured to support and heat a substrate with embedded heating elements and a lower portion with a tube-like structure formed from aluminum nitride that is configured to support the upper portion and house electrodes for supplying power to the embedded heating elements of the upper portion, and the pedestal is configured to heat the substrate during deposition of a carbon compound film.

公开(公告)号：US12198951B2

公开(公告)日：2025-01-14

申请号：US15917365

申请日：2018-03-09

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Srinivas D. Nemani ,  Adib Khan ,  Venkata Ravishankar Kasibhotla ,  Sultan Malik ,  Sean S. Kang ,  Keith Tatseun Wong

IPC: H01L21/67 ,  C23C16/52 ,  H01L21/324 ,  H01L21/687 ,  H01L21/768

Abstract: A high-pressure processing system for processing a substrate includes a first chamber, a pedestal positioned within the first chamber to support the substrate, a second chamber adjacent the first chamber, a vacuum processing system configured to lower a pressure within the second chamber to near vacuum, a valve assembly between the first chamber and the second chamber to isolate the pressure within the first chamber from the pressure within the second chamber, and a gas delivery system configured to introduce a processing gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres while the processing gas is in the first chamber and while the first chamber is isolated from the second chamber.

公开(公告)号：US12112972B2

公开(公告)日：2024-10-08

申请号：US17221215

申请日：2021-04-02

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Douglas Arthur Buchberger, Jr. ,  Gautam Pisharody ,  Dmitry Lubomirsky ,  Shekhar Athani

IPC: H01L21/687 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/505 ,  H01J37/32 ,  H01L21/683

CPC classification number: H01L21/68785 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/463 ,  C23C16/505 ,  H01J37/32091 ,  H01J37/32724 ,  H01J37/32899 ,  H01L21/6833 ,  H01L21/68792 ,  C23C16/45565 ,  H01J37/32183 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32706

Abstract: Embodiments of substrate supports are provided herein. In some embodiments, a substrate support for use in a chemical vapor deposition (CVD) chamber includes: a pedestal to support a substrate, wherein the pedestal includes a dielectric plate coupled to a pedestal body; a rotary union coupled to the pedestal, wherein the rotary union includes a stationary housing disposed about a rotor; a drive assembly coupled to the rotary union; a coolant union coupled to the rotary union and having a coolant inlet fluidly coupled to coolant channels disposed in the pedestal via a coolant line; an RF rotary joint coupled to the coolant union and having an RF connector configured to couple the pedestal to an RF bias power source; and an RF conduit that extends from the RF connector to the pedestal through a central opening of the pedestal body to provide RF bias to the pedestal.