公开(公告)号：US07132338B2

公开(公告)日：2006-11-07

申请号：US10845984

申请日：2004-05-14

申请人： Arkadii V. Samoilov ,  Yihwan Kim ,  Errol Sanchez ,  Nicholas C. Dalida

发明人： Arkadii V. Samoilov ,  Yihwan Kim ,  Errol Sanchez ,  Nicholas C. Dalida

IPC分类号： H01L21/336

CPC分类号： H01L21/823814 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02636 ,  H01L21/28044 ,  H01L21/28114 ,  H01L21/823807 ,  H01L29/165 ,  H01L29/66242 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/78 ,  H01L29/7834 ,  H01L29/7848

摘要： In one embodiment, a method for fabricating a silicon-based device on a substrate surface is provided which includes depositing a first silicon-containing layer by exposing the substrate surface to a first process gas comprising Cl2SiH2, a germanium source, a first etchant and a carrier gas and depositing a second silicon-containing layer by exposing the first silicon-containing layer to a second process gas comprising SiH4 and a second etchant. In another embodiment, a method for depositing a silicon-containing material on a substrate surface is provided which includes depositing a first silicon-containing layer on the substrate surface with a first germanium concentration of about 15 at % or more. The method further provides depositing on the first silicon-containing layer a second silicon-containing layer wherein a second germanium concentration of about 15 at % or less, exposing the substrate surface to air to form a native oxide layer, removing the native oxide layer to expose the second silicon-containing layer, and depositing a third silicon-containing layer on the second silicon-containing layer. In another embodiment, a method for depositing a silicon-containing material on a substrate surface is provided which includes depositing epitaxially a first silicon-containing layer on the substrate surface with a first lattice strain, and depositing epitaxially on the first silicon-containing layer a second silicon-containing layer with a second lattice strain greater than the first lattice strain.

摘要翻译： 在一个实施例中，提供了一种在衬底表面上制造硅基器件的方法，其包括通过将衬底表面暴露于包含Cl 2 SiH 2的第一工艺气体来沉积第一含硅层， 锗源，第一蚀刻剂和载气，并且通过将第一含硅层暴露于包含SiH 4 N 2的第二工艺气体而沉积第二含硅层， 和第二蚀刻剂。 在另一个实施例中，提供了一种用于在衬底表面上沉积含硅材料的方法，其包括以约15at％或更多的第一锗浓度在衬底表面上沉积第一含硅层。 该方法进一步提供了在第一含硅层上沉积第二含硅层，其中第二锗浓度为约15原子％或更低，将基底表面暴露于空气中以形成天然氧化物层，将天然氧化物层去除 暴露第二含硅层，并在第二含硅层上沉积第三含硅层。 在另一个实施例中，提供了一种用于在衬底表面上沉积含硅材料的方法，其包括以第一晶格应变在衬底表面上外延沉积第一含硅层，并且在第一含硅层上外延沉积 第二含硅层具有大于第一晶格应变的第二晶格应变。

公开(公告)号：US09343430B2

公开(公告)日：2016-05-17

申请号：US13225296

申请日：2011-09-02

申请人： Arkadii V. Samoilov ,  Tie Wang ,  Yi-Sheng Anthony Sun

发明人： Arkadii V. Samoilov ,  Tie Wang ,  Yi-Sheng Anthony Sun

IPC分类号： H01L23/48 ,  H01L25/065 ,  H01L23/00 ,  H01L23/31 ,  H01L21/56 ,  H01L23/498 ,  H01L25/00 ,  H01L21/48 ,  H01L21/50

CPC分类号： H01L25/0657 ,  H01L21/48 ,  H01L21/50 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3128 ,  H01L23/49816 ,  H01L24/94 ,  H01L24/96 ,  H01L25/0652 ,  H01L25/50 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/73259 ,  H01L2224/81005 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2224/81

摘要： Wafer-level package devices are described that include multiple die packaged into a single wafer-level package device. In an implementation, a wafer-level package device includes a semiconductor device having at least one electrical interconnection formed therein. At least one semiconductor package device is positioned over the first surface of the semiconductor device. The semiconductor package device includes one or more micro-solder bumps. The wafer-level package device further includes an encapsulation structure disposed over and supported by the semiconductor device for encapsulating the semiconductor package device(s). When the semiconductor package device is positioned over the semiconductor device, each micro-solder bump is connected to a respective electrical interconnection that is formed in the semiconductor device.

摘要翻译： 描述了包括多个管芯封装在单个晶片级封装器件中的晶片级封装器件。 在一个实现中，晶片级封装器件包括其中形成有至少一个电互连的半导体器件。 至少一个半导体封装器件位于半导体器件的第一表面上方。 半导体封装器件包括一个或多个微焊料凸块。 晶片级封装器件还包括设置在半导体器件上并由半导体器件支撑以封装半导体封装器件的封装结构。 当半导体封装器件位于半导体器件上方时，每个微焊料凸块连接到形成在半导体器件中的相应的电互连。

公开(公告)号：US08779540B2

公开(公告)日：2014-07-15

申请号：US13337879

申请日：2011-12-27

申请人： Nicole D. Kerness ,  Arkadii V. Samoilov ,  Zhihai Wang ,  Joy T. Jones

发明人： Nicole D. Kerness ,  Arkadii V. Samoilov ,  Zhihai Wang ,  Joy T. Jones

IPC分类号： H01L31/0232

CPC分类号： H01L27/14621 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02165 ,  H01L31/02327 ,  H01L31/18 ,  H01L2224/13

摘要： Light sensor devices are described that have a glass substrate, which includes a lens to focus light over a wide variety of angles, bonded to the light sensor device. In one or more implementations, the light sensor devices include a substrate having a photodetector formed therein. The photodetector is capable of detecting light and providing a signal in response thereto. The sensors also include one or more color filters disposed over the photodetector. The color filters are configured to pass light in a limited spectrum of wavelengths to the photodetector. A glass substrate is disposed over the substrate and includes a lens that is configured to collimate light incident on the lens and to pass the collimated light to the color filter.

摘要翻译： 描述了具有玻璃基板的光传感器装置，该玻璃基板包括用于将光聚焦在各种各样的角度上的结合到光传感器装置上的透镜。 在一个或多个实施方案中，光传感器装置包括其中形成有光电检测器的基板。 光电检测器能够检测光并响应于此提供信号。 传感器还包括设置在光电检测器上方的一个或多个滤色器。 滤色器被配置为将光在有限的波长范围内传递到光电检测器。 玻璃基板设置在基板上方，并且包括被配置为准直入射在透镜上的光并将准直光通过到滤色器的透镜。

公开(公告)号：US08749007B1

公开(公告)日：2014-06-10

申请号：US13337871

申请日：2011-12-27

申请人： Nicole D. Kerness ,  Arkadii V. Samoilov ,  Zhihai Wang ,  Joy T. Jones

发明人： Nicole D. Kerness ,  Arkadii V. Samoilov ,  Zhihai Wang ,  Joy T. Jones

IPC分类号： H01L31/0232

CPC分类号： H01L27/14621 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02165 ,  H01L31/02327 ,  H01L31/18 ,  H01L2224/13

摘要： A light sensor is described that includes a glass substrate having a diffuser formed therein and at least one color filter integrated on-chip (i.e., integrated on the die of the light sensor). In one or more implementations, the light sensor comprises a semiconductor device (e.g., a die) that includes a semiconductor substrate. At least one photodetector (e.g., photodiode, phototransistor, etc.) is formed in the substrate proximate to the surface of the substrate. The color filter is configured to filter light received by the light sensor to pass light in a limited spectrum of wavelengths (e.g., light having wavelengths between a first wavelength and a second wavelength) to the photodetector. A glass substrate is positioned over the substrate and includes a diffuser. The diffuser is configured to diffuse light incident on the diffuser and to pass the diffused light to the at least one color filter for further filtering.

摘要翻译： 描述了一种光传感器，其包括其中形成有扩散器的玻璃基板和集成在片上（即，集成在光传感器的管芯上）的至少一个滤色器。 在一个或多个实施方案中，光传感器包括包括半导体衬底的半导体器件（例如裸片）。 至少一个光电探测器（例如，光电二极管，光电晶体管等）形成在靠近衬底表面的衬底中。 滤色器被配置为过滤由光传感器接收的光以将有限的波长（例如，具有第一波长和第二波长之间的波长的光）的光传递到光电检测器。 玻璃基板位于基板上方并且包括扩散器。 漫射器被配置为漫射入射在扩散器上的光并且将漫射光通过至少一个滤色器以进一步滤光。

公开(公告)号：US08586456B2

公开(公告)日：2013-11-19

申请号：US13149865

申请日：2011-05-31

申请人： Zhiyuan Ye ,  Yihwan Kim ,  Xiaowei Li ,  Ali Zojaji ,  Nicholas C. Dalida ,  Jinsong Tang ,  Xiao Chen ,  Arkadii V. Samoilov

发明人： Zhiyuan Ye ,  Yihwan Kim ,  Xiaowei Li ,  Ali Zojaji ,  Nicholas C. Dalida ,  Jinsong Tang ,  Xiao Chen ,  Arkadii V. Samoilov

IPC分类号： C23C16/24 ,  H01L21/20 ,  H01L21/36

CPC分类号： H01L21/02639 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.

摘要翻译： 在第一方面中，提供了在基板上形成外延膜的方法。 该方法包括（a）提供衬底; （b）将衬底暴露于硅源和碳源以形成含碳硅外延膜; （c）用封装膜封装含碳硅外延膜; 和（d）将衬底暴露于Cl2以蚀刻封装膜。 提供了许多其他方面。

公开(公告)号：US20120187515A1

公开(公告)日：2012-07-26

申请号：US13337879

申请日：2011-12-27

申请人： Nicole D. Kerness ,  Arkadii V. Samoilov ,  Zhihai Wang ,  Joy T. Jones

发明人： Nicole D. Kerness ,  Arkadii V. Samoilov ,  Zhihai Wang ,  Joy T. Jones

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L27/14621 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02165 ,  H01L31/02327 ,  H01L31/18 ,  H01L2224/13

摘要： Light sensor devices are described that have a glass substrate, which includes a lens to focus light over a wide variety of angles, bonded to the light sensor device. In one or more implementations, the light sensor devices include a substrate having a photodetector formed therein. The photodetector is capable of detecting light and providing a signal in response thereto. The sensors also include one or more color filters disposed over the photodetector. The color filters are configured to pass light in a limited spectrum of wavelengths to the photodetector. A glass substrate is disposed over the substrate and includes a lens that is configured to collimate light incident on the lens and to pass the collimated light to the color filter.

摘要翻译： 描述了具有玻璃基板的光传感器装置，该玻璃基板包括用于将光聚焦在各种各样的角度上的结合到光传感器装置上的透镜。 在一个或多个实施方案中，光传感器装置包括其中形成有光电检测器的基板。 光电检测器能够检测光并响应于此提供信号。 传感器还包括设置在光电检测器上方的一个或多个滤色器。 滤色器被配置为将光在有限的波长范围内传递到光电检测器。 玻璃基板设置在基板上方，并且包括被配置为准直入射在透镜上的光并将准直光通过到滤色器的透镜。

公开(公告)号：US20120187280A1

公开(公告)日：2012-07-26

申请号：US13337855

申请日：2011-12-27

申请人： Nicole D. Kerness ,  Arkadii V. Samoilov ,  Zhihai Wang ,  Joy T. Jones

发明人： Nicole D. Kerness ,  Arkadii V. Samoilov ,  Zhihai Wang ,  Joy T. Jones

IPC分类号： H01L31/0232 ,  H01L31/18

CPC分类号： H01L31/02327 ,  G01S17/58 ,  H01L27/1446 ,  H01L31/102 ,  H01L31/112 ,  H01L31/167 ,  H01L31/18

摘要： Techniques are described to furnish an IR suppression filter, or any other interference based filter, that is formed on a transparent substrate to a light sensor. In one or more implementations, a light sensor includes a substrate having a surface. One or more photodetectors are formed in the substrate. The photodetectors are configured to detect light and provide a signal in response thereto. An IR suppression filter configured to block infrared light from reaching the surface is formed on a transparent substrate. The light sensor may also include a plurality of color pass filters disposed over the surface. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors. A buffer layer is disposed over the surface and configured to encapsulate the plurality of color pass filters and adhesion layer.

摘要翻译： 描述了将技术描述为在光传感器的透明基板上形成的IR抑制滤波器或任何其它基于干涉的滤波器。 在一个或多个实施方式中，光传感器包括具有表面的基板。 在衬底中形成一个或多个光电检测器。 光电检测器被配置为检测光并响应于此提供信号。 构造成阻挡红外光到达表面的IR抑制滤光器形成在透明基板上。 光传感器还可以包括布置在表面上的多个彩色滤光片。 彩色通过滤光器被配置为过滤可见光以将有限的波长光中的光传递到一个或多个光电检测器。 缓冲层设置在表面上并且被配置为封装多个彩色通过滤光片和粘附层。

公开(公告)号：US20110317385A1

公开(公告)日：2011-12-29

申请号：US12822326

申请日：2010-06-24

申请人： Tiao Zhou ,  Arkadii V. Samoilov

发明人： Tiao Zhou ,  Arkadii V. Samoilov

IPC分类号： H05K7/12 ,  H01L21/44 ,  H01L23/488

CPC分类号： H01L23/3171 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/03462 ,  H01L2224/0382 ,  H01L2224/03828 ,  H01L2224/0384 ,  H01L2224/03903 ,  H01L2224/0401 ,  H01L2224/0508 ,  H01L2224/05111 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05567 ,  H01L2224/05571 ,  H01L2224/05611 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/11312 ,  H01L2224/1132 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/11462 ,  H01L2224/11849 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/93 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/01087 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2224/11 ,  H01L2224/05552 ,  H01L2924/00

摘要： WLP semiconductor devices include bump assemblies that have a barrier layer for inhibiting electromigration within the bump assemblies. In an implementation, the bump assemblies include copper posts formed on the integrated circuit chips of the WLP devices. Barrier layers formed of a metal such as nickel (Ni) are provided on the outer surface of the copper posts to inhibit electromigration in the bump assembly. Oxidation prevention caps formed of a metal such as tin (Sn) are provided over the barrier layer. Solder bumps are formed over the oxidation prevention caps. The oxidation prevention caps inhibit oxidation of the barrier layer during fabrication of the bump assemblies.

摘要翻译： WLP半导体器件包括具有用于抑制凸块组件内的电迁移的阻挡层的凸块组件。 在一个实现中，凸块组件包括形成在WLP器件的集成电路芯片上的铜柱。 在铜柱的外表面上设置由诸如镍（Ni）的金属形成的阻挡层，以抑制凸块组件中的电迁移。 由锡（Sn）等金属形成的防氧化膜设置在阻挡层的上方。 在氧化防止盖上形成焊料凸块。 氧化防止帽在制造凸块组件期间阻止阻挡层的氧化。

公开(公告)号：US20110290176A1

公开(公告)日：2011-12-01

申请号：US13206088

申请日：2011-08-09

申请人： Arkadii V. Samoilov

发明人： Arkadii V. Samoilov

IPC分类号： C30B25/02

CPC分类号： C23C16/54 ,  C23C16/0236 ,  C23C16/24 ,  C30B25/02 ,  C30B29/06

摘要： Systems, methods, and apparatus are provided for using a cluster tool to pre-clean a substrate in a first processing chamber utilizing a first gas prior to epitaxial film formation, transfer the substrate from the first processing chamber to a second processing chamber through a transfer chamber under a vacuum, and form an epitaxial layer on the substrate in the second processing chamber without utilizing the first gas. Numerous additional aspects are disclosed.

摘要翻译： 提供了系统，方法和装置，用于使用簇工具，在外延膜形成之前利用第一气体在第一处理室中预清洁衬底，通过转移将衬底从第一处理室转移到第二处理室 在第二处理室内的基板上形成外延层，而不用第一气体。 公开了许多附加方面。

公开(公告)号：US20110248398A1

公开(公告)日：2011-10-13

申请号：US12755929

申请日：2010-04-07

申请人： PIROOZ PARVARANDEH ,  Reynante Alvarado ,  Chiung C. Lo ,  Arkadii V. Samoilov

发明人： PIROOZ PARVARANDEH ,  Reynante Alvarado ,  Chiung C. Lo ,  Arkadii V. Samoilov

IPC分类号： H01L23/498 ,  H01L21/78 ,  H01L21/60 ,  H05K1/11

CPC分类号： H01L24/14 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/03828 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/0603 ,  H01L2224/0613 ,  H01L2224/11001 ,  H01L2224/11312 ,  H01L2224/1132 ,  H01L2224/1134 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11849 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/1703 ,  H01L2224/17051 ,  H01L2224/17517 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01068 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/1432 ,  H01L2924/1436 ,  H01L2924/3512 ,  H01L2224/05552

摘要： Wafer-level chip-scale package semiconductor devices are described that have bump assemblies configured to mitigate solder bump failures due to stresses, particularly stresses caused by CTE mismatch during thermal cycling tests, dynamic deformation during drop tests or cyclic bending tests, and so on. In an implementation, the wafer-level chip-scale package devices include an integrated circuit chip having two or more arrays of bump assemblies for mounting the device to a printed circuit board. At least one of the arrays includes bump assemblies that are configured to withstand higher levels of stress than the bump assemblies of the remaining arrays.

摘要翻译： 描述了具有凸块组件的晶片级芯片级封装半导体器件，所述凸块组件被配置为减轻由于应力导致的焊料凸块故障，特别是在热循环测试期间由CTE失配引起的应力，跌落测试期间的动态变形或循环弯曲测试等。 在一个实现中，晶片级芯片级封装器件包括具有两个或更多个凸块组件阵列的集成电路芯片，用于将器件安装到印刷电路板上。 所述阵列中的至少一个包括凸块组件，其被配置为承受比剩余阵列的凸块组件更高的应力水平。