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55 条记录 (耗时 0.052 秒)

    High-pressure electrodialysis device
    32.
    发明授权
    High-pressure electrodialysis device 有权
    高压电渗析装置

    公开(公告)号：US08784632B2

    公开(公告)日：2014-07-22

    申请号：US12969465

    申请日：2010-12-15

    申请人： Matthew D. Eisaman ,  Karl A. Littau ,  Daniel Larner

    发明人： Matthew D. Eisaman ,  Karl A. Littau ,  Daniel Larner

    IPC分类号： B01D61/46

    CPC分类号： B01D61/422 ,  B01D53/1425 ,  B01D53/1475 ,  B01D53/62 ,  B01D53/96 ,  B01D61/445 ,  B01D61/50 ,  B01D61/52 ,  B01D63/085 ,  B01D2257/504 ,  B01D2313/143 ,  B01D2313/146 ,  B01D2313/24 ,  B01D2313/28 ,  B01D2313/30 ,  B01D2313/345 ,  C01B32/50 ,  Y02C10/04 ,  Y02C10/06 ,  Y02P20/152

    摘要： An apparatus for performing electrodialysis at pressures greater than or equal to the ambient pressure is described. The apparatus includes an electrodialysis membrane stack and housing. The electrodialysis membrane stack includes at least one electrodialysis cell. The electrodialysis apparatus includes electrodes that apply voltage across the electrodialysis stack. The housing pressurizes the electrodialysis stack at a stack pressure. The housing includes a cell chamber that receives the electrodialysis stack, the cell chamber including at least one pressurization port communicating with the cell chamber such that a portion of electrode solution is transmittable into a region of the cell chamber outside the electrodialysis stack. A system for performing electrodialysis at pressures greater than ambient pressure includes at least two solution loops, an electrode solution loop, and an electrodialysis apparatus operatively connected to the solution and electrode solution loops that performs electrodialysis at a stack pressure that is greater than ambient pressure.

    摘要翻译： 描述了在大于或等于环境压力的压力下进行电渗析的装置。 该装置包括电渗析膜堆和壳体。 电渗析膜堆叠包括至少一个电渗析池。 电渗析装置包括施加电渗析堆叠电压的电极。 外壳在堆叠压力下对电渗析堆叠进行加压。 壳体包括容纳电渗析堆的细胞室，细胞室包括与细胞室连通的至少一个加压端口，使得电极溶液的一部分可透射到电渗析堆层外部的细胞室的区域。 用于在大于环境压力的压力下进行电渗析的系统包括至少两个溶液回路，电极溶液回路和电解质设备，所述电解液循环和电渗析装置可操作地连接到在大于环境压力的叠层压力下进行电渗析的溶液和电极溶液回路。

    Printed fuel cell with integrated gas channels
    33.
    发明授权
    Printed fuel cell with integrated gas channels 有权
    具有集成气体通道的印刷燃料电池

    公开(公告)号：US08389165B2

    公开(公告)日：2013-03-05

    申请号：US12325159

    申请日：2008-11-29

    申请人： Karl A. Littau

    发明人： Karl A. Littau

    IPC分类号： H01M4/88 ,  H01M4/92 ,  B05D5/12

    CPC分类号： H01M8/1007 ,  H01M4/8814 ,  H01M4/8825 ,  H01M8/006 ,  H01M8/0258 ,  H01M8/0289 ,  H01M8/0297 ,  H01M8/1097 ,  H01M2008/1095 ,  Y02P70/56

    摘要： A method of manufacturing a fuel cell includes applying a sacrificial material periodically to a surface of an anode substrate, wherein at least some areas of the anode substrate have no sacrificial material. A first gas diffusion layer is applied to the sacrificial material, and a first catalyst material is applied to the first gas diffusion layer. An electrolyte material is applied to the anode substrate and the first gas diffusion layer, with the catalyst material, wherein a first surface of the electrolyte material is in operative association with the anode substrate, and the first gas diffusion layer. A second catalyst material is applied to the second surface of the electrolyte material. A second gas diffusion layer is applied to the electrolyte material on a second surface of the electrolyte material, with the catalyst material, wherein a first surface of the second gas diffusion layer is in contact with the second surface of the electrolyte material with the catalyst material. A cathode is applied to the second gas diffusion layer with the second catalyst material, and the sacrificial material is then removed from the surface of the anode substrate to create integrated gas channels for the manufactured fuel cell.

    摘要翻译： 一种制造燃料电池的方法包括将牺牲材料周期性地施加到阳极基板的表面，其中阳极基板的至少一些区域不具有牺牲材料。 将第一气体扩散层施加到牺牲材料上，并且将第一催化剂材料施加到第一气体扩散层。 使用催化剂材料将电解质材料施加到阳极基板和第一气体扩散层，其中电解质材料的第一表面与阳极基板和第一气体扩散层可操作地相关联。 将第二催化剂材料施加到电解质材料的第二表面。 在电解质材料的第二表面上与催化剂材料一起将第二气体扩散层施加到电解质材料上，其中第二气体扩散层的第一表面与电解质材料的第二表面与催化剂材料接触 。 用第二催化剂材料将阴极施加到第二气体扩散层，然后从阳极基板的表面去除牺牲材料，以产生用于制造的燃料电池的集成气体通道。

    HIGH-PRESSURE ELECTRODIALYSIS DEVICE
    34.
    发明申请
    HIGH-PRESSURE ELECTRODIALYSIS DEVICE 有权
    高压电器设备

    公开(公告)号：US20120152747A1

    公开(公告)日：2012-06-21

    申请号：US12969465

    申请日：2010-12-15

    申请人： Matthew D. Eisaman ,  Karl A. Littau ,  Daniel Larner

    发明人： Matthew D. Eisaman ,  Karl A. Littau ,  Daniel Larner

    IPC分类号： B01D61/50 ,  B01D61/44 ,  B01D61/42

    CPC分类号： B01D61/422 ,  B01D53/1425 ,  B01D53/1475 ,  B01D53/62 ,  B01D53/96 ,  B01D61/445 ,  B01D61/50 ,  B01D61/52 ,  B01D63/085 ,  B01D2257/504 ,  B01D2313/143 ,  B01D2313/146 ,  B01D2313/24 ,  B01D2313/28 ,  B01D2313/30 ,  B01D2313/345 ,  C01B32/50 ,  Y02C10/04 ,  Y02C10/06 ,  Y02P20/152

    摘要： An apparatus for performing electrodialysis at pressures greater than or equal to the ambient pressure is described. The apparatus includes an electrodialysis membrane stack and housing. The electrodialysis membrane stack includes at least one electrodialysis cell. The electrodialysis apparatus includes electrodes that apply voltage across the electrodialysis stack. The housing pressurizes the electrodialysis stack at a stack pressure. The housing includes a cell chamber that receives the electrodialysis stack, the cell chamber including at least one pressurization port communicating with the cell chamber such that a portion of electrode solution is transmittable into a region of the cell chamber outside the electrodialysis stack. A system for performing electrodialysis at pressures greater than ambient pressure includes at least two solution loops, an electrode solution loop, and an electrodialysis apparatus operatively connected to the solution and electrode solution loops that performs electrodialysis at a stack pressure that is greater than ambient pressure.

    摘要翻译： 描述了在大于或等于环境压力的压力下进行电渗析的装置。 该装置包括电渗析膜堆和壳体。 电渗析膜堆叠包括至少一个电渗析池。 电渗析装置包括施加电渗析堆叠电压的电极。 外壳在堆叠压力下对电渗析堆叠进行加压。 壳体包括容纳电渗析堆的细胞室，细胞室包括与细胞室连通的至少一个加压端口，使得电极溶液的一部分可透射到电渗析堆层外部的细胞室的区域中。 用于在大于环境压力的压力下进行电渗析的系统包括至少两个溶液回路，电极溶液回路和电解质设备，所述电解液循环和电渗析装置可操作地连接到以大于环境压力的叠层压力进行电渗析的溶液和电极溶液回路。

    Method for depositing tungsten-containing layers by vapor deposition techniques
    36.
    发明授权
    Method for depositing tungsten-containing layers by vapor deposition techniques 有权
    通过气相沉积技术沉积含钨层的方法

    公开(公告)号：US07220673B2

    公开(公告)日：2007-05-22

    申请号：US11461909

    申请日：2006-08-02

    申请人： Ming Xi ,  Ashok Sinha ,  Moris Kori ,  Alfred W. Mak ,  Xinliang Lu ,  Ken Kaung Lai ,  Karl A. Littau

    发明人： Ming Xi ,  Ashok Sinha ,  Moris Kori ,  Alfred W. Mak ,  Xinliang Lu ,  Ken Kaung Lai ,  Karl A. Littau

    IPC分类号： H01L21/44

    CPC分类号： C23C16/0272 ,  C23C16/34 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876

    摘要： In one embodiment, a method for forming a tungsten-containing material on a substrate is provided which includes forming a tungsten nucleation layer by sequentially exposing a substrate to a boron-containing gas and a tungsten-containing gas within a processing chamber during an atomic layer deposition process, and forming a tungsten bulk layer on the tungsten nucleation layer by exposing the substrate to a processing gas that contains the tungsten-containing gas and a reactive precursor gas within another processing chamber during a chemical vapor deposition process. In one example, the tungsten nucleation layer is deposited on a dielectric material, such as silicon oxide. In another example, the tungsten nucleation layer is deposited on a barrier material, such as titanium or titanium nitride. Other examples provide that the tungsten nucleation layer and the tungsten bulk layer are deposited in the same processing chamber.

    摘要翻译： 在一个实施例中，提供了一种用于在基板上形成含钨材料的方法，其包括通过在原子层中将衬底顺序地暴露于处理室内的含硼气体和含钨气体来形成钨成核层 通过在化学气相沉积工艺期间将衬底暴露于另一处理室内含有含钨气体和反应性前体气体的处理气体，在钨成核层上形成钨体层。 在一个实例中，钨成核层沉积在介电材料如氧化硅上。 在另一个实例中，钨成核层沉积在诸如钛或氮化钛的阻挡材料上。 其他实例提供了钨成核层和钨本体层沉积在相同的处理室中。

    Showerhead with reduced contact area
    37.
    发明授权
    Showerhead with reduced contact area 有权
    淋浴头接触面积减小

    公开(公告)号：US06461435B1

    公开(公告)日：2002-10-08

    申请号：US09603117

    申请日：2000-06-22

    申请人： Karl A. Littau ,  Bevan Vo ,  Salvador P. Umotoy ,  Son N. Trinh ,  Chien-Teh Kao ,  Ken Kaung Lai ,  Bo Zheng ,  Ping Jian ,  Siqing Lu ,  Anzhong Chang

    发明人： Karl A. Littau ,  Bevan Vo ,  Salvador P. Umotoy ,  Son N. Trinh ,  Chien-Teh Kao ,  Ken Kaung Lai ,  Bo Zheng ,  Ping Jian ,  Siqing Lu ,  Anzhong Chang

    IPC分类号： C23C1600

    CPC分类号： C23C16/45565 ,  C23C16/455 ,  H01J37/3244

    摘要： A showerhead for distributing gases in a semiconductor process chamber. In one embodiment, a showerhead comprising a perforated center portion, a mounting portion circumscribing the perforated center portion and a plurality of bosses extending from the mounting portion each having a hole disposed therethrough is provided. Another embodiment of the invention provides a showerhead that includes a mounting portion having a first side circumscribing a perforated center portion. A ring extends from the first side of the mounting portion. A plurality of mounting holes are disposed in the mounting portion radially to either side of the ring. The showerhead provides controlled thermal transfer between the showerhead and chamber lid resulting in less deposition on the showerhead.

    摘要翻译： 用于在半导体处理室中分配气体的喷头。 在一个实施例中，提供了一种喷头，包括穿孔中心部分，围绕穿孔中心部分的安装部分和从安装部分延伸的多个凸起，每个凸起具有穿过其中设置的孔。 本发明的另一个实施例提供了一种喷头，其包括具有围绕穿孔中心部分的第一侧面的安装部分。 环从安装部分的第一侧延伸。 多个安装孔径向地设置在安装部分的环的任一侧。 淋浴头在喷头和室盖之间提供受控的热转印，从而在喷头上沉积较少。

    Heater with shadow ring and purge above wafer surface
    40.
    发明授权
    Heater with shadow ring and purge above wafer surface 失效
    加热器带有阴影环并在晶片表面上方吹扫

    公开(公告)号：US5888304A

    公开(公告)日：1999-03-30

    申请号：US626789

    申请日：1996-04-02

    申请人： Salvador P. Umotoy ,  Alan F. Morrison ,  Karl A. Littau ,  Richard A. Marsh ,  Lawrence Chung-Lai Lei ,  Dale DuBois

    发明人： Salvador P. Umotoy ,  Alan F. Morrison ,  Karl A. Littau ,  Richard A. Marsh ,  Lawrence Chung-Lai Lei ,  Dale DuBois

    IPC分类号： C23C16/02 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  H01L21/205 ,  H01L21/285 ,  C23C16/00

    CPC分类号： C23C16/45521 ,  C23C16/4585 ,  C23C16/46

    摘要： This invention provides a method and apparatus for supporting a wafer in a processing chamber, where the wafer is supported and heated from below via a heater pedestal having a diameter larger than that of the wafer. A process fluid flowing downward toward the top of the wafer is inhibited from depositing near the wafer edge by a shadow ring. The shadow ring, which is placed over but does not contact the wafer, physically masks an annular strip of the wafer near its edge. The shadow ring inhibits deposition of process fluides on the wafer in two distinct ways. First, the shadow ring physically obstructs process gas, flowing downward from above the wafer, from depositing on the masked portion of the wafer. Second, the shadow ring is used to direct a flow of a purge gas to inhibit process gas from seeping under the shadow ring and depositing near the wafer edge. A purge gas manifold is defined by a cylindrical annulus located concentrically below the shadow ring and circumscribing the heater pedestal. A purge gap between the wafer and the shadow ring forms the outlet of the purge gas manifold. The purge gas flows out of the purge gap, inhibiting the process gas from entering the purge gap, and thus further inhibiting deposition on the masked portion of the wafer.

    摘要翻译： 本发明提供了一种用于在处理室中支撑晶片的方法和装置，其中通过直径大于晶片直径的加热器基座从下方支撑晶片并从其下被加热。 向晶片顶部向下流动的工艺流体被阴影环抑制在晶片边缘附近沉积。 放置在但不接触晶片的阴影环在其边缘附近物理屏蔽晶片的环形条。 阴影环以两种截然不同的方式阻止了工艺流程在晶片上沉积。 首先，阴影环物理地阻挡从晶片上方向下流动的工艺气体沉积在晶片的掩蔽部分上。 第二，阴影环用于引导吹扫气体的流动，以阻止处理气体在阴影环下渗出并沉积在晶片边缘附近。 吹扫气体歧管由同心地位于阴影环下方并围绕加热器基座的圆柱形环限定。 晶片和阴影环之间的吹扫间隙形成吹扫气体歧管的出口。 净化气体流出吹扫间隙，阻止处理气体进入吹扫间隙，从而进一步抑制沉积在晶片的掩蔽部分上。