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    MOLDED CHIP FABRICATION METHOD AND APPARATUS
    34.
    发明申请
    MOLDED CHIP FABRICATION METHOD AND APPARATUS 有权
    模制芯片制造方法和装置

    公开(公告)号：US20140191259A1

    公开(公告)日：2014-07-10

    申请号：US14209652

    申请日：2014-03-13

    Applicant: CREE, INC.

    Inventor： MICHAEL S. LEUNG ,  Eric J. Tarsa ,  James Ibbetson

    IPC: H01L33/50 ,  H01L27/15

    CPC classification number: H01L33/504 ,  H01L21/565 ,  H01L24/96 ,  H01L27/15 ,  H01L33/50 ,  H01L2224/2518 ,  H01L2924/12041 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2933/0041 ,  H01L2924/00

    Abstract: A method and apparatus for coating a plurality of semiconductor devices that is particularly adapted to coating LEDs with a coating material containing conversion particles. One method according to the invention comprises providing a mold with a formation cavity. A plurality of semiconductor devices are mounted within the mold formation cavity and a curable coating material is injected or otherwise introduced into the mold to fill the mold formation cavity and at least partially cover the semiconductor devices. The coating material is cured so that the semiconductor devices are at least partially embedded in the cured coating material. The cured coating material with the embedded semiconductor devices is removed from the formation cavity. The semiconductor devices are separated so that each is at least partially covered by a layer of the cured coating material. One embodiment of an apparatus according to the invention for coating a plurality of semiconductor devices comprises a mold housing having a formation cavity arranged to hold semiconductor devices. The formation cavity is also arranged so that a curable coating material can be injected into and fills the formation cavity to at least partially covering the semiconductor devices.

    Abstract translation: 一种用于涂覆多个半导体器件的方法和设备，其特别适用于涂覆含有转化颗粒的涂层材料的LED。 根据本发明的一种方法包括提供具有地层腔的模具。 多个半导体器件安装在模具形成腔内，并且可固化涂层材料被注入或以其它方式被引入到模具中以填充模具形成腔并且至少部分地覆盖半导体器件。 固化涂层材料，使得半导体器件至少部分地嵌入固化的涂层材料中。 具有嵌入式半导体器件的固化的涂层材料从形成腔中移除。 半导体器件被分离成使得每个半导体器件至少部分被固化的涂层材料层覆盖。 根据本发明的用于涂覆多个半导体器件的设备的一个实施例包括具有布置成保持半导体器件的形成空腔的模具外壳。 形成空腔也被布置成使得可固化的涂层材料可以注入并填充地层腔以至少部分地覆盖半导体器件。

    Composite high reflectivity layer
    35.
    发明授权
    Composite high reflectivity layer 有权
    复合高反射层

    公开(公告)号：US08710536B2

    公开(公告)日：2014-04-29

    申请号：US14047566

    申请日：2013-10-07

    Applicant: Cree, Inc.

    Inventor： James Ibbetson ,  Ting Li ,  Monica Hansen

    IPC: H01L33/00

    CPC classification number: H01L33/10 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

    Abstract: A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises an LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. The composite layer comprises a first layer, and alternating plurality of second and third layers on the first layer, and a reflective layer on the topmost of said plurality of second and third layers. The second and third layers have a different index of refraction, and the first layer is at least three times thicker than the thickest of the second and third layers. For composite layers internal to the LED chip, conductive vias can be included through the composite layer to allow an electrical signal to pass through the composite layer to the LED.

    Abstract translation: 一种具有与所述LED集成的复合高反射层的高效率发光二极管，以提高发射效率。 发光二极管（LED）芯片的一个实施例包括LED和与LED成一体的复合高反射层，以反射从有源区发射的光。 所述复合层包括第一层和在第一层上交替的多个第二和第三层，以及在所述多个第二层和第三层的最上层的反射层。 第二层和第三层具有不同的折射率，并且第一层比第二层和第三层中最厚的层厚至少三倍。 对于LED芯片内部的复合层，可以通过复合层包括导电通孔，以允许电信号通过复合层到达LED。

    Low profile lighting module
    36.
    发明授权
    Low profile lighting module 有权

    公开(公告)号：US10288261B2

    公开(公告)日：2019-05-14

    申请号：US14696902

    申请日：2015-04-27

    Applicant: CREE, INC.

    Inventor： James Ibbetson ,  Bernd Keller ,  Eric Tarsa ,  Zongjie Yuan

    IPC: H01L27/15 ,  F21V11/00 ,  F21K9/00 ,  F21K9/60 ,  F21V3/00 ,  H01L33/54 ,  F21Y105/10 ,  F21Y103/10 ,  F21Y115/10

    Abstract: A low profile lighting module. Devices according to this disclosure can produce a uniform light intensity output profile, limiting the perceived appearance of individual point sources, from direct lighting modules comprising several light emitting diodes. Individual lighting device components are disclosed that can contribute to this uniform profile, including: primary optics, secondary optics, and contoured housing elements. These components can interact with and control emitted light, thus adjusting its pattern. These components can alter the direction of emitted light, providing a more uniform light intensity over a wider range of viewing angle.

    Wire bond free wafer level LED
    37.
    发明授权
    Wire bond free wafer level LED 有权

    公开(公告)号：US10199360B2

    公开(公告)日：2019-02-05

    申请号：US15449510

    申请日：2017-03-03

    Applicant: CREE, INC.

    Inventor： Bernd Keller ,  Ashay Chitnis ,  Nicholas W. Medendorp, Jr. ,  James Ibbetson ,  Max Batres

    IPC: H01L33/00 ,  H01L25/075 ,  H01L33/58 ,  H01L33/50 ,  H01L33/38 ,  H01L33/62 ,  H01L33/08 ,  H01L33/22 ,  H01L33/48 ,  H01L33/46

    Abstract: A wire-bond free semiconductor device with two electrodes both of which are accessible from the bottom side of the device. The device is fabricated with two electrodes that are electrically connected to the oppositely doped epitaxial layers, each of these electrodes having leads with bottom-side access points. This structure allows the device to be biased with an external voltage/current source, obviating the need for wire-bonds or other such connection mechanisms that must be formed at the packaging level. Thus, features that are traditionally added to the device at the packaging level (e.g., phosphor layers or encapsulants) may be included in the wafer level fabrication process. Additionally, the bottom-side electrodes are thick enough to provide primary structural support to the device, eliminating the need to leave the growth substrate as part of the finished device.

    Light emitting diode dielectric mirror
    40.
    发明授权
    Light emitting diode dielectric mirror 有权
    发光二极管电介质镜

    公开(公告)号：US09461201B2

    公开(公告)日：2016-10-04

    申请号：US13909927

    申请日：2013-06-04

    Applicant: CREE, INC.

    Inventor： Sten Heikman ,  James Ibbetson

    IPC: H01L33/00 ,  H01L33/10 ,  H01L33/32 ,  H01L33/46 ,  H01L33/38 ,  H01L33/40

    CPC classification number: H01L33/10 ,  H01L33/32 ,  H01L33/38 ,  H01L33/405 ,  H01L33/46

    Abstract: A high efficiency LED chip is disclosed that comprises an active LED structure comprising an active layer between two oppositely doped layers. A first reflective layer can be provided adjacent to one of the oppositely doped layers, with the first layer comprising a material with a different index of refraction than the active LED structure. The difference in IR between the active LED structure and the first reflective layer increases TIR of light at the junction. In some embodiments the first reflective layer can comprise an IR lower than the semiconductor material, increasing the amount of light that can experience TIR. Some embodiments of LED chips according to the present invention can also comprise a second reflective layer or metal layer on and used in conjunction with the first reflective layer such that light passing through the first reflective layer can be reflected by the second reflective layer.

    Abstract translation: 公开了一种高效率LED芯片，其包括在两个相对掺杂的层之间包括有源层的有源LED结构。 第一反射层可以与相对掺杂的层之一相邻地设置，第一层包括与有源LED结构不同的折射率的材料。 有源LED结构和第一反射层之间的IR差异增加了接合处的光的TIR。 在一些实施例中，第一反射层可以包括低于半导体材料的IR，增加可以体验TIR的光量。 根据本发明的LED芯片的一些实施例还可以包括第二反射层或金属层，并且与第一反射层结合使用，使得穿过第一反射层的光可被第二反射层反射。

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