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公开(公告)号:US08784636B2
公开(公告)日:2014-07-22
申请号:US12314080
申请日:2008-12-03
申请人: Mizuki Nagai , Nobutoshi Saito , Fumio Kuriyama , Akira Fukunaga
发明人: Mizuki Nagai , Nobutoshi Saito , Fumio Kuriyama , Akira Fukunaga
CPC分类号: H01L21/76847 , C23C14/046 , C23C14/16 , C23C14/584 , C25D5/003 , C25D5/022 , C25D5/08 , C25D5/10 , C25D7/123 , C25D17/001 , C25D21/10 , H01L21/2885 , H01L21/76849 , H01L21/76879 , H05K3/108 , H05K3/423 , H05K2201/09563 , H05K2203/1476
摘要: A method can form a conductive structure, which is useful for three-dimensional packaging with via plugs, in a shorter time by shortening the conventional long plating time that is an impediment to the practical use of electroplating. The method includes forming a conductive film on an entire surface, including interior surfaces of via holes, of a substrate having the via holes formed in the surface; forming a resist pattern at a predetermined position on the conductive film; carrying out first electroplating under first plating conditions, using the conductive film as a feeding layer, thereby filling a first plated film into the via holes; and carrying out second electroplating under second plating conditions, using the conductive film and the first plated film as a feeding layer, thereby allowing a second plated film to grow on the conductive film and the first plated film, both exposed in the resist openings of the resist pattern.
摘要翻译: 一种方法可以形成导电结构,其可用于具有通孔塞的三维封装,在更短的时间内缩短常规的长电镀时间,这是阻碍电镀实际使用的障碍。 该方法包括在具有形成在表面中的通孔的基板的整个表面上形成导电膜,包括通孔的内表面; 在导电膜上的预定位置处形成抗蚀剂图案; 在第一电镀条件下进行第一次电镀,使用导电膜作为供电层,从而将第一镀膜填充到通孔中; 并且在第二电镀条件下进行第二次电镀,使用导电膜和第一镀膜作为供电层,从而允许第二镀膜在导电膜和第一镀膜上生长,两者都暴露在 抗蚀图案
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公开(公告)号:US08252167B2
公开(公告)日:2012-08-28
申请号:US12966297
申请日:2010-12-13
申请人: Fumio Kuriyama , Takashi Takemura , Nobutoshi Saito , Masaaki Kimura , Rei Kiumi
发明人: Fumio Kuriyama , Takashi Takemura , Nobutoshi Saito , Masaaki Kimura , Rei Kiumi
CPC分类号: C25D17/008 , C23C18/1628 , C25D5/08 , C25D7/123 , C25D17/001 , C25D21/10 , H01L21/288 , H01L21/2885 , H01L24/11 , H01L2224/05568 , H01L2224/05573 , H01L2224/1147 , H01L2224/13099 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/00
摘要: A plating apparatus for use in forming a plated film in trenches, via holes, or resist openings that are defined in a surface of a semiconductor wafer, and forming bumps to be electrically connected to electrodes of a package, on a surface of a semiconductor wafer. The plating apparatus has a plating tank for holding a plating solution, a holder for holding a workpiece and bringing a surface to be plated of the workpiece into contact with the plating solution in the plating tank, and a ring-shaped nozzle pipe disposed in the plating tank and having a plurality of plating solution injection nozzles for injecting the plating solution to the surface to be plated of the workpiece held by the holder to supply the plating solution into the plating tank.
摘要翻译: 一种电镀装置,用于在半导体晶片的表面中限定的沟槽,通孔或抗蚀剂开口中形成电镀膜,并且在半导体晶片的表面上形成电连接到封装的电极的凸块 。 电镀装置具有用于保持电镀液的镀槽,用于保持工件的保持器,使被加工物的表面与镀槽中的镀液接触,并且设置在该镀槽中的环状喷嘴管 电镀槽,并具有多个电镀液注入喷嘴,用于将电镀液注射到由保持件保持的工件的待镀表面上,以将电镀溶液供应到电镀槽中。
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公开(公告)号:US20110180412A1
公开(公告)日:2011-07-28
申请号:US13014931
申请日:2011-01-27
CPC分类号: C25D5/10 , C25D3/38 , C25D5/00 , C25D5/02 , C25D5/022 , C25D5/08 , C25D17/001 , C25D21/10 , H01L21/2885 , H01L21/76877
摘要: A plating method can fill a plated metal into interconnect recesses at a higher rate without forming voids in the plated metal embedded in the interconnect recesses. The plating method includes: preparing a substrate having interconnect recesses in a surface; carrying out first pretreatment of the substrate by immersing the substrate in a first pretreatment solution containing an accelerator, a metal ion and an acid; carrying out second pretreatment of the substrate by immersing the substrate in a second pretreatment solution containing an additive which inhibits the effect of the accelerator contained in the first pretreatment solution, and not containing an accelerator; and then carrying out electroplating of the substrate surface by using a plating solution containing at least a metal ion, an acid and a suppressor, and not containing an accelerator, thereby filling the plated metal into the interconnect recesses.
摘要翻译: 电镀方法可以以更高的速率将电镀金属填充到互连凹槽中,而不会在嵌入互连凹槽中的电镀金属中形成空隙。 电镀方法包括:制备在表面上具有互连凹槽的衬底; 通过将基板浸入含有促进剂,金属离子和酸的第一预处理溶液中来进行基材的第一预处理; 通过将基板浸入含有抑制第一预处理溶液中所含的促进剂的作用而不含促进剂的添加剂的第二预处理溶液中进行基板的第二预处理; 然后通过使用至少含有金属离子,酸和抑制剂的电镀溶液进行基板表面的电镀,不含促进剂,从而将电镀金属填充到互连凹部中。
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公开(公告)号:US07875158B2
公开(公告)日:2011-01-25
申请号:US10538507
申请日:2004-03-09
申请人: Fumio Kuriyama , Takashi Takemura , Nobutoshi Saito , Masaaki Kimura , Rei Kiumi
发明人: Fumio Kuriyama , Takashi Takemura , Nobutoshi Saito , Masaaki Kimura , Rei Kiumi
CPC分类号: C25D17/008 , C23C18/1628 , C25D5/08 , C25D7/123 , C25D17/001 , C25D21/10 , H01L21/288 , H01L21/2885 , H01L24/11 , H01L2224/05568 , H01L2224/05573 , H01L2224/1147 , H01L2224/13099 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01076 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/00
摘要: A plating apparatus for use in forming a plated film in trenches, via holes, or resist openings that are defined in a surface of a semiconductor wafer, and forming bumps to be electrically connected to electrodes of a package, on a surface of a semiconductor wafer. The plating apparatus has a plating tank for holding a plating solution, a holder for holding a workpiece and bringing a surface to be plated of the workpiece into contact with the plating solution in the plating tank, and a ring-shaped nozzle pipe disposed in the plating tank and having a plurality of plating solution injection nozzles for injecting the plating solution to the surface to be plated of the workpiece held by the holder to supply the plating solution into the plating tank.
摘要翻译: 一种电镀装置,用于在半导体晶片的表面中限定的沟槽,通孔或抗蚀剂开口中形成电镀膜,并且在半导体晶片的表面上形成电连接到封装的电极的凸块 。 电镀装置具有用于保持电镀液的镀槽,用于保持工件的保持器,使被加工物的表面与镀槽中的镀液接触,并且设置在该镀槽中的环状喷嘴管 电镀槽,并具有多个电镀液注入喷嘴,用于将电镀液注射到由保持件保持的工件的待镀表面上,以将电镀溶液供应到电镀槽中。
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公开(公告)号:US07507319B2
公开(公告)日:2009-03-24
申请号:US11490131
申请日:2006-07-21
申请人: Fumio Kuriyama , Masaaki Kimura
发明人: Fumio Kuriyama , Masaaki Kimura
IPC分类号: C25B9/02
摘要: An anode holder is used to hold an anode in a plating tank. The anode holder includes a bar having a conductive portion connected to a power source, a conductive anode shaft attached to the bar, and an anode connected to the conductive anode shaft. The conductive anode shaft includes an external thread portion provided at an end of the conductive anode shaft, an O-ring, and a step portion provided between the O-ring and the external thread portion. The step portion has a diameter larger than a diameter of the external thread portion but smaller than a diameter of the O-ring. The anode includes an internal thread hole to which the external thread portion of the conductive anode shaft is screwed. The anode also includes a receiving portion for receiving the step portion of the conductive anode shaft in a state such that the O-ring of the conductive anode shaft is brought into contact with an inner surface of the receiving portion.
摘要翻译: 阳极保持器用于将阳极保持在电镀槽中。 阳极保持器包括具有连接到电源的导电部分的杆,连接到杆的导电阳极轴和连接到导电阳极轴的阳极。 导电阳极轴包括设置在导电阳极轴的端部的外螺纹部分,O形环和设置在O形环和外螺纹部分之间的台阶部分。 台阶部分的直径大于外螺纹部分的直径,但小于O形环的直径。 阳极包括内螺纹孔,导电阳极轴的外螺纹部分被螺纹连接到该内螺纹孔。 阳极还包括用于接收导电阳极轴的台阶部分的接收部分,其状态使得导电阳极轴的O形环与接收部分的内表面接触。
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公开(公告)号:US20080017505A1
公开(公告)日:2008-01-24
申请号:US11490131
申请日:2006-07-21
申请人: Fumio Kuriyama , Masaaki Kimura
发明人: Fumio Kuriyama , Masaaki Kimura
摘要: An anode holder is used to hold an anode in a plating tank. The anode holder includes a bar having a conductive portion connected to a power source, a conductive anode shaft attached to the bar, and an anode connected to the conductive anode shaft. The conductive anode shaft includes an external thread portion provided at an end of the conductive anode shaft, an O-ring, and a step portion provided between the O-ring and the external thread portion. The step portion has a diameter larger than a diameter of the external thread portion but smaller than a diameter of the O-ring. The anode includes an internal thread hole to which the external thread portion of the conductive anode shaft is screwed. The anode also includes a receiving portion for receiving the step portion of the conductive anode shaft in a state such that the O-ring of the conductive anode shaft is brought into contact with an inner surface of the receiving portion.
摘要翻译: 阳极保持器用于将阳极保持在电镀槽中。 阳极保持器包括具有连接到电源的导电部分的杆,连接到杆的导电阳极轴和连接到导电阳极轴的阳极。 导电阳极轴包括设置在导电阳极轴的端部的外螺纹部分,O形环和设置在O形环和外螺纹部分之间的台阶部分。 台阶部分的直径大于外螺纹部分的直径,但小于O形环的直径。 阳极包括内螺纹孔,导电阳极轴的外螺纹部分被螺纹连接到该内螺纹孔。 阳极还包括用于接收导电阳极轴的台阶部分的接收部分,其状态使得导电阳极轴的O形环与接收部分的内表面接触。
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公开(公告)号:US20060081478A1
公开(公告)日:2006-04-20
申请号:US11251799
申请日:2005-10-18
申请人: Tsuyoshi Sahoda , Tsutomu Nakada , Nobutoshi Saito , Junichiro Yoshioka , Fumio Kuriyama , Masunobu Onozawa
发明人: Tsuyoshi Sahoda , Tsutomu Nakada , Nobutoshi Saito , Junichiro Yoshioka , Fumio Kuriyama , Masunobu Onozawa
CPC分类号: H01L21/76877 , C25D5/08 , C25D5/18 , C25D7/123 , C25D17/001 , C25D17/008 , C25D17/02 , C25D21/10 , H01L21/288 , H01L21/2885 , H01L21/76849 , H01L23/53238 , H01L24/11 , H01L2224/03912 , H01L2224/0401 , H01L2224/1147 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/04953
摘要: A plating apparatus employs a dipping method with good gas-bubble releasability and, by regulating the flow of plating solution in a plating tank, can enhance the in-plane uniformity of a thickness of a plated film. The plating apparatus includes a plating tank for holding a plating solution, a plating solution jet nozzle having a slit-like plating solution jet orifice for jetting the plating solution toward a surface to be plated of an object to be plated disposed in the plating tank, and a plating solution supply section for supplying the plating solution to the plating solution jet nozzle.
摘要翻译: 电镀装置采用具有良好的气泡剥离性的浸渍方法,并且通过调节电镀槽中的电镀液的流动,可以提高镀膜厚度的面内均匀性。 电镀装置包括用于保持电镀液的电镀槽,具有狭缝状电镀液喷射孔的电镀液喷射喷嘴,用于将电镀液朝向被镀设置在电镀槽内的被镀物体的表面喷射, 以及用于将电镀液供给到电镀液喷嘴的电镀液供给部。
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公开(公告)号:US06269221B1
公开(公告)日:2001-07-31
申请号:US09662897
申请日:2000-09-15
申请人: Kuniaki Horie , Hidenao Suzuki , Tsutomu Nakada , Fumio Kuriyama , Takeshi Murakami , Masahito Abe , Yuji Araki , Hiroyuki Ueyama
发明人: Kuniaki Horie , Hidenao Suzuki , Tsutomu Nakada , Fumio Kuriyama , Takeshi Murakami , Masahito Abe , Yuji Araki , Hiroyuki Ueyama
IPC分类号: F22B2906
CPC分类号: C23C16/45565 , C23C16/448 , C23C16/45561 , C23C16/4557
摘要: A compact vaporizer system is presented to produce a high quality vapor feed from a liquid feed to be delivered to a chemical vapor deposition processing chamber to produce thin film devices based on highly dielectric or ferroelectric materials such as BaTiO3, SrTiO3 and other such materials. The vaporization apparatus comprises a feed tank for storing the liquid feed; feed delivery means for transporting the liquid feed by way of a feed delivery path; a vaporizer section disposed in the delivery path comprising a high temperature heat exchanger having a capillary tube for transporting the liquid feed and a heat source for externally heating the capillary tube; and a vaporization prevention section disposed upstream of the vaporizer section for preventing effects of the vaporizer section to the liquid feed within the vaporization prevention section.
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公开(公告)号:US5062271A
公开(公告)日:1991-11-05
申请号:US519377
申请日:1990-05-04
CPC分类号: F04D19/046 , F04B37/06 , Y10S417/901
摘要: An evacuation apparatus and method using a turbomolecular pump having a rotor provided with a plurality of rotor blades and a spacer provided with a plurality of stator blades so that gas molecules are sucked in from a suction port, compressed and discharged from an exhaust port of the turbomolecular pump is disclosed. A heat exchanger is provided at the suction port side of the turbomolecular pump to freeze-trap gas molecules from being cooled by a helium refrigerator.The gate valve is disposed upstream of the heat exchanger and is provided in a suction pipe which extends between the vacuum vessel and the turbomolecular pump. In exhausting the vacuum vessel, the gate valve is opened and, in this state, the turbomolecular pump and the helium refrigerator are run. During regeneration, the gate valve is closed, the turbomolecular pump is run, and the heat exchanger is heated by means of a heater or by operation of the helium refrigator being suspended, thereby sublimating molecules freeze-trapped in the heat exchanger.
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