公开(公告)号：US10461203B2

公开(公告)日：2019-10-29

申请号：US15925904

申请日：2018-03-20

Applicant: Infineon Technologies AG

Inventor： Stefan Clara ,  Thomas Grille ,  Ursula Hedenig ,  Peter Irsigler ,  Bernhard Jakoby ,  Ventsislav M. Lavchiev ,  Thomas Ostermann ,  Thomas Popp

IPC: H01L31/0352 ,  H01L33/06 ,  H01L31/18 ,  H01L31/173

Abstract: A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 μm and 10 μm or to absorb light with a light absorption maximum at a wavelength of between 2 μm and 10 μm.

公开(公告)号：US10199332B2

公开(公告)日：2019-02-05

申请号：US15587184

申请日：2017-05-04

Applicant: Infineon Technologies AG

Inventor： Oliver Hellmund ,  Peter Irsigler ,  Sebastian Schmidt ,  Hans-Joachim Schulze ,  Martina Seider-Schmidt

IPC: H01L23/00 ,  H01L21/306 ,  H01L21/768 ,  H01L23/528 ,  H01L29/08 ,  H01L29/66 ,  H01L29/78 ,  H01L29/417 ,  H01L29/06 ,  H01L21/304

Abstract: A semiconductor device includes a power transistor in a semiconductor substrate portion, where the semiconductor substrate portion includes a central portion and a kerf, components of the power transistor are arranged in the central portion, and the central portion has a thickness d. The semiconductor device also includes a support element disposed over a main surface of the central portion, where the support element has a smallest lateral extension t at a side adjacent to the main surface of the semiconductor substrate portion and a height h, where 0.1×h≤d≤4×h and 0.1×h≤t≤1.5×h.

公开(公告)号：US10106398B2

公开(公告)日：2018-10-23

申请号：US14724224

申请日：2015-05-28

Applicant: Infineon Technologies AG

Inventor： Ulrich Schmid ,  Tobias Frischmuth ,  Peter Irsigler ,  Thomas Grille ,  Daniel Maurer ,  Ursula Hedenig ,  Markus Kahn ,  Guenter Denifl ,  Michael Schneider

IPC: B81C1/00 ,  B81B3/00

Abstract: A micromechanical structure comprises a substrate and a functional structure arranged at the substrate. The functional structure comprises a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region. The functional structure comprises a carbon layer arrangement, wherein a basis material of the carbon layer arrangement is a carbon material.

公开(公告)号：US20180180542A1

公开(公告)日：2018-06-28

申请号：US15904463

申请日：2018-02-26

Applicant: Infineon Technologies AG

Inventor： Jonathan Silvano de Sousa ,  Thomas Grille ,  Ursula Hedenig ,  Thomas Neidhart ,  Peter Irsigler ,  Vijaye Kumar Rajaraman

IPC: G01N21/59 ,  G02B6/12 ,  G01N21/3504 ,  G01K11/00 ,  G02B6/125 ,  G01L7/08

CPC classification number: G01N21/59 ,  G01K11/00 ,  G01L7/086 ,  G01N21/3504 ,  G01N2201/062 ,  G02B6/12004 ,  G02B6/125 ,  G02B2006/12166

Abstract: A sensor and methods of making a sensor are disclosed. The sensor may include a substrate including an opening, an optical source disposed in the substrate and configured to generate an optical source signal, an optical detector disposed in the substrate so that the opening is disposed between the optical source and the optical detector, a plurality of optical cavity structures disposed in the opening wherein each of the plurality of optical cavity structures contains an enclosed cavity so that the respective enclosed cavities are not in gas communication with each other, wherein the plurality of optical cavity structures are arranged in an optical path between the optical source and the optical detector, and a processing circuit coupled to the optical detector and configured to process an optical signal received by the optical detector.

公开(公告)号：US20180108675A1

公开(公告)日：2018-04-19

申请号：US15785627

申请日：2017-10-17

Applicant: Infineon Technologies AG

Inventor： Sebastian Schmidt ,  Donald Dibra ,  Oliver Hellmund ,  Peter Irsigler ,  Andreas Meiser ,  Hans-Joachim Schulze ,  Martina Seider-Schmidt ,  Robert Wiesner

IPC: H01L27/12 ,  H01L21/762 ,  H01L21/02 ,  H01L21/265 ,  H01L29/06 ,  H01L21/84

Abstract: In accordance with an embodiment of an integrated circuit, a cavity is buried in a semiconductor body below a first surface of the semiconductor body. An active area portion of the semiconductor body is arranged between the first surface and the cavity. The integrated circuit further includes a trench isolation structure configured to provide a lateral electric isolation of the active area portion.

公开(公告)号：US20170365516A1

公开(公告)日：2017-12-21

申请号：US15629165

申请日：2017-06-21

Applicant: Infineon Technologies AG

Inventor： Oliver Hellmund ,  Peter Irsigler ,  Sebastian Schmidt ,  Hans-Joachim Schulze ,  Martina Seider-Schmidt

IPC: H01L21/768 ,  H01L21/02 ,  H01L23/48 ,  H01L23/495

CPC classification number: H01L21/76898 ,  H01L21/0242 ,  H01L23/481 ,  H01L23/482 ,  H01L23/495 ,  H01L24/05 ,  H01L29/0657 ,  H01L2224/04026 ,  H01L2224/05559 ,  H01L2224/05572 ,  H01L2224/291 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2924/014

Abstract: A method for forming a semiconductor device includes forming a plurality of non-semiconductor material portions at a first side of a semiconductor substrate; forming semiconductor material on the plurality of non-semiconductor material portions to bury the plurality of non-semiconductor material portions within semiconductor material; removing at least a portion of the semiconductor substrate from a second side of the semiconductor substrate to uncover the plurality of non-semiconductor material portions at a backside of the semiconductor device; and forming a rough surface at the backside of the semiconductor device by removing at least a subset of the plurality of non-semiconductor material portions while at least a part of a semiconductor material located laterally between the plurality of non-semiconductor material portions remains or by removing at least a part of a semiconductor material located laterally between the plurality of non-semiconductor material portions while the plurality of non-semiconductor material portions remain.

公开(公告)号：US20160351739A1

公开(公告)日：2016-12-01

申请号：US15167292

申请日：2016-05-27

Applicant: Infineon Technologies AG

Inventor： Stefan CLARA ,  Thomas Grille ,  Ursula Hedenig ,  Peter Irsigler ,  Bernhard Jakoby ,  Ventsislav M. Lavchiev ,  Thomas Ostermann ,  Thomas Popp

IPC: H01L31/0352 ,  H01L31/18 ,  H01L33/06

CPC classification number: H01L31/035254 ,  H01L31/035209 ,  H01L31/035218 ,  H01L31/173 ,  H01L31/1812 ,  H01L31/1864 ,  H01L33/06 ,  H01L2933/0033

Abstract: A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 μm and 10 μm or to absorb light with a light absorption maximum at a wavelength of between 2 μm and 10 μm.

Abstract translation: 半导体器件包括主要包含锗的多个量子结构。 多个量子结构形成在第一半导体层结构上。 多个量子结构的量子结构具有小于15nm的横向尺寸和每平方厘米至少8×1011个量子结构的面积密度。 多个量子结构被配置为发射波长在2μm和10μm之间的发光最大值的光，或者吸收波长在2μm和10μm之间的最大光吸收的光。

公开(公告)号：US20160197070A1

公开(公告)日：2016-07-07

申请号：US15051105

申请日：2016-02-23

Applicant: Infineon Technologies AG

Inventor： Markus Zundel ,  Andreas Meiser ,  Hans-Peter Lang ,  Thorsten Meyer ,  Peter Irsigler

IPC: H01L27/06 ,  H01L29/45 ,  H01L29/423 ,  H01L29/417 ,  H01L29/78 ,  H01L29/861

CPC classification number: H01L29/7813 ,  H01L21/02 ,  H01L21/743 ,  H01L21/762 ,  H01L21/76224 ,  H01L21/823418 ,  H01L21/823475 ,  H01L23/48 ,  H01L27/0629 ,  H01L27/0694 ,  H01L29/06 ,  H01L29/0657 ,  H01L29/407 ,  H01L29/417 ,  H01L29/41741 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/456 ,  H01L29/66477 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/78 ,  H01L29/7803 ,  H01L29/7827 ,  H01L29/7845 ,  H01L29/861 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a semiconductor body having first and second opposing sides. Contact trenches extend, from the first and second sides, through a dielectric and into the semiconductor body. The contact trenches include conductive material electrically connected to the semiconductor body via sidewalls. The contact trenches include a first contact trench extending through a first dielectric and into the semiconductor body at the first side, the first contact trench including a first conductive material electrically connected to the semiconductor body adjoining the first contact trench, a second contact trench extending through a second dielectric and into the semiconductor body at the second side, the second contact trench including a second conductive material, a first contact pattern surrounded by the first dielectric at the first side, and a second contact pattern surrounded by the second dielectric at the second side.

Abstract translation: 半导体器件包括具有第一和第二相对侧的半导体本体。 接触沟槽从第一侧和第二侧延伸穿过电介质并进入半导体本体。 接触沟槽包括通过侧壁电连接到半导体本体的导电材料。 接触沟槽包括延伸穿过第一电介质并在第一侧进入半导体本体的第一接触沟槽，第一接触沟槽包括电连接到邻接第一接触沟槽的半导体本体的第一导电材料，延伸穿过第二接触沟槽 第二电介质并且在第二侧进入半导体本体，第二接触沟槽包括第二导电材料，由第一侧面处的第一电介质围绕的第一接触图案和在第二侧被第二电介质包围的第二接触图案 侧。

公开(公告)号：US20160153907A1

公开(公告)日：2016-06-02

申请号：US14557584

申请日：2014-12-02

Applicant: Infineon Technologies AG

Inventor： Jonathan Silvano de Sousa ,  Thomas Grille ,  Ursula Hedenig ,  Thomas Neidhart ,  Peter Irsigler ,  Vijaye Kumar Rajaraman

IPC: G01N21/59 ,  G01K11/00 ,  G01L7/08 ,  G02B6/12 ,  G02B6/125

CPC classification number: G01N21/59 ,  G01K11/00 ,  G01L7/086 ,  G01N21/3504 ,  G01N2201/062 ,  G02B6/12004 ,  G02B6/125 ,  G02B2006/12166

Abstract: A sensor and methods of making a sensor are disclosed. The sensor may include a substrate, an optical source, an optical detector, a plurality of optical cavities in the substrate or in a layer structure over the substrate, where the plurality of optical cavities may be arranged in an optical path between the optical source and the optical detector, and a processing circuit coupled to the optical detector and configured to receive a signal representing an optical signal received by the optical detector.

Abstract translation: 公开了一种传感器和制造传感器的方法。 传感器可以包括衬底，光源，光学检测器，衬底中的多个光学腔或衬底上的层结构，其中多个光学腔可以被布置在光学源和光源之间的光路中 光检测器和耦合到光检测器的处理电路，并且被配置为接收表示由光检测器接收的光信号的信号。

公开(公告)号：US20160035850A1

公开(公告)日：2016-02-04

申请号：US14450387

申请日：2014-08-04

Applicant: Infineon Technologies AG

Inventor： Ulrich Glaser ,  Peter Irsigler ,  Hans-Joachim Schulze

IPC: H01L29/45 ,  H01L21/302 ,  H01L21/02 ,  H01L29/417 ,  H01L21/283

CPC classification number: H01L29/45 ,  H01L21/02647 ,  H01L21/283 ,  H01L21/302 ,  H01L21/743 ,  H01L23/535 ,  H01L29/0653 ,  H01L29/0808 ,  H01L29/0821 ,  H01L29/417 ,  H01L29/41708 ,  H01L29/41766 ,  H01L29/456 ,  H01L29/6634 ,  H01L29/66348 ,  H01L29/735 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/7813 ,  H01L29/8611 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a trench extending into a semiconductor body from a first surface. At least one of a ternary carbide and a ternary nitride is in the trench.

Abstract translation: 半导体器件包括从第一表面延伸到半导体本体中的沟槽。 三角碳化物和三元氮化物中的至少一种在沟槽中。