公开(公告)号：US07626253B2

公开(公告)日：2009-12-01

申请号：US11514390

申请日：2006-08-30

申请人： Masanori Onodera ,  Kouichi Meguro ,  Junji Tanaka

发明人： Masanori Onodera ,  Kouichi Meguro ,  Junji Tanaka

IPC分类号： H01L21/44

CPC分类号： H01L25/50 ,  G06F1/183 ,  H01L21/56 ,  H01L21/563 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/66 ,  H01L24/11 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/18 ,  H01L2221/68331 ,  H01L2223/6677 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/73265 ,  H01L2224/85051 ,  H01L2224/85186 ,  H01L2224/85986 ,  H01L2225/0651 ,  H01L2225/0652 ,  H01L2225/06548 ,  H01L2225/06568 ,  H01L2225/06575 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/4554

摘要： The present invention provides a semiconductor device and a fabrication method therefor, the semiconductor device including a first semiconductor chip (20) disposed on a substrate (10), a first sealing resin (26) sealing the first semiconductor chip (20), a built-in semiconductor device (30) disposed on the first sealing resin (26), and a second sealing resin (36) sealing the first sealing resin (26) and the built-in semiconductor device (30) and covering a side surface (S) of the substrate (10). According to an aspect of the present invention, it is possible to provide a high-quality semiconductor device and a fabrication method therefor, in which downsizing and cost reduction can be realized.

摘要翻译： 本发明提供一种半导体器件及其制造方法，所述半导体器件包括设置在基板（10）上的第一半导体芯片（20），密封第一半导体芯片（20）的第一密封树脂（26），内置 - 设置在第一密封树脂（26）上的半导体器件（30）和密封第一密封树脂（26）和内置半导体器件（30）并覆盖侧表面（S）的第二密封树脂（36） ）的基板（10）。 根据本发明的一个方面，可以提供一种能够实现小型化和降低成本的高品质半导体器件及其制造方法。

公开(公告)号：US07566978B2

公开(公告)日：2009-07-28

申请号：US11654703

申请日：2007-01-17

申请人： Koji Taya ,  Masanori Onodera ,  Junji Tanaka ,  Kouichi Meguro

发明人： Koji Taya ,  Masanori Onodera ,  Junji Tanaka ,  Kouichi Meguro

IPC分类号： H01L23/48

CPC分类号： H01L21/56 ,  B29C45/02 ,  B29C45/14655 ,  B29C45/1671 ,  H01L21/565 ,  H01L23/28 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/552 ,  H01L24/48 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/05599 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/85399 ,  H01L2225/0651 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/3025 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012

摘要： The present invention include a semiconductor device and a method therefor, the method includes disposing a sheet-shaped resin at a side opposite to the chip mounting portion mounting semiconductor chips to be mounted on the chip mounting portion, and forming a resin sealing portion between the sheet-shaped resin and the chip mounting portion, to seal the semiconductor chips. According to an aspect of the present invention, it is possible to provide a semiconductor device and a fabrication method therefor, by which it is possible to reduce the size of the package and to prevent the generation of an unfilled portion in a resin sealing portion or a filler-removed portion or to prevent the exposure of wire from the resin sealing portion.

摘要翻译： 本发明包括一种半导体器件及其方法，该方法包括在安装半导体芯片的芯片安装部分相对的一侧设置片状树脂以安装在芯片安装部分上，并且在该芯片安装部分之间形成树脂密封部分 片状树脂和芯片安装部分，以密封半导体芯片。 根据本发明的一个方面，可以提供一种半导体器件及其制造方法，通过该半导体器件及其制造方法，可以减小封装的尺寸并防止在树脂密封部分中产生未填充部分 填料去除部分或防止电线从树脂密封部分暴露。

公开(公告)号：US20070045876A1

公开(公告)日：2007-03-01

申请号：US11514390

申请日：2006-08-30

申请人： Masanori Onodera ,  Kouichi Meguro ,  Junji Tanaka

发明人： Masanori Onodera ,  Kouichi Meguro ,  Junji Tanaka

IPC分类号： H01L23/29

CPC分类号： H01L25/50 ,  G06F1/183 ,  H01L21/56 ,  H01L21/563 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/66 ,  H01L24/11 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/18 ,  H01L2221/68331 ,  H01L2223/6677 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/73265 ,  H01L2224/85051 ,  H01L2224/85186 ,  H01L2224/85986 ,  H01L2225/0651 ,  H01L2225/0652 ,  H01L2225/06548 ,  H01L2225/06568 ,  H01L2225/06575 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/4554

摘要： The present invention provides a semiconductor device and a fabrication method therefor, the semiconductor device including a first semiconductor chip (20) disposed on a substrate (10), a first sealing resin (26) sealing the first semiconductor chip (20), a built-in semiconductor device (30) disposed on the first sealing resin (26), and a second sealing resin (36) sealing the first sealing resin (26) and the built-in semiconductor device (30) and covering a side surface (S) of the substrate (10). According to an aspect of the present invention, it is possible to provide a high-quality semiconductor device and a fabrication method therefor, in which downsizing and cost reduction can be realized.

摘要翻译： 本发明提供一种半导体器件及其制造方法，所述半导体器件包括设置在基板（10）上的第一半导体芯片（20），密封第一半导体芯片（20）的第一密封树脂（26），内置 - 设置在第一密封树脂（26）上的半导体器件（30）和密封第一密封树脂（26）和内置半导体器件（30）并覆盖侧表面（S）的第二密封树脂（36） ）的基板（10）。 根据本发明的一个方面，可以提供一种能够实现小型化和降低成本的高品质半导体器件及其制造方法。

公开(公告)号：US08329562B2

公开(公告)日：2012-12-11

申请号：US12965706

申请日：2010-12-10

申请人： Masanori Onodera ,  Kouichi Meguro ,  Junji Tanaka

发明人： Masanori Onodera ,  Kouichi Meguro ,  Junji Tanaka

IPC分类号： H01L21/326

CPC分类号： H01L25/50 ,  G06F1/183 ,  H01L21/56 ,  H01L21/563 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/66 ,  H01L24/11 ,  H01L24/48 ,  H01L24/73 ,  H01L24/85 ,  H01L25/0657 ,  H01L25/18 ,  H01L2221/68331 ,  H01L2223/6677 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/73265 ,  H01L2224/85051 ,  H01L2224/85186 ,  H01L2224/85986 ,  H01L2225/0651 ,  H01L2225/0652 ,  H01L2225/06548 ,  H01L2225/06568 ,  H01L2225/06575 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/4554

摘要： Various embodiments of the present invention include a semiconductor device and a fabrication method therefor, the semiconductor device including a first semiconductor chip disposed on a substrate, a first sealing resin sealing the first semiconductor chip, a built-in semiconductor device disposed on the first sealing resin, and a second sealing resin sealing the first sealing resin and the built-in semiconductor device and covering a side surface of the substrate. According to an aspect of the present invention, it is possible to provide a high-quality semiconductor device and a fabrication method therefor, in which downsizing and cost reduction can be realized.

摘要翻译： 本发明的各种实施例包括半导体器件及其制造方法，所述半导体器件包括设置在基板上的第一半导体芯片，密封第一半导体芯片的第一密封树脂，设置在第一密封件上的内置半导体器件 树脂和密封第一密封树脂和内置半导体器件并覆盖基板的侧表面的第二密封树脂。 根据本发明的一个方面，可以提供一种能够实现小型化和降低成本的高品质半导体器件及其制造方法。

公开(公告)号：US08492890B2

公开(公告)日：2013-07-23

申请号：US12049900

申请日：2008-03-17

申请人： Kouichi Meguro ,  Masanori Onodera

发明人： Kouichi Meguro ,  Masanori Onodera

IPC分类号： H01L23/538

CPC分类号： H01L21/50 ,  H01L21/561 ,  H01L21/568 ,  H01L21/78 ,  H01L23/3128 ,  H01L23/3135 ,  H01L24/19 ,  H01L24/48 ,  H01L24/73 ,  H01L24/94 ,  H01L24/97 ,  H01L25/03 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/73209 ,  H01L2224/73259 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/03

摘要： A semiconductor device which includes a first semiconductor chip, a second semiconductor chip flip-chip bonded to the first semiconductor chip, a resin portion for sealing the first semiconductor chip and the second semiconductor chip such that a lower surface of the first semiconductor chip and an upper surface of the second semiconductor chip are exposed and a side surface of the first semiconductor chip is covered, and a post electrode which pierces the resin portion and is connected to the first semiconductor chip, and a manufacturing method thereof are provided.

公开(公告)号：US08269343B2

公开(公告)日：2012-09-18

申请号：US12234337

申请日：2008-09-19

申请人： Kouichi Meguro

发明人： Kouichi Meguro

IPC分类号： H01L23/34

CPC分类号： H01L25/105 ,  H01L21/568 ,  H01L23/49551 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/05001 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/16237 ,  H01L2224/16245 ,  H01L2224/75253 ,  H01L2224/81001 ,  H01L2224/81141 ,  H01L2224/81191 ,  H01L2224/81224 ,  H01L2224/81801 ,  H01L2224/83907 ,  H01L2224/9202 ,  H01L2224/97 ,  H01L2225/1029 ,  H01L2225/1041 ,  H01L2225/1064 ,  H01L2225/1082 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01027 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/01082 ,  H01L2924/18161 ,  H01L2924/3511 ,  H01L2224/81 ,  H01L2924/00014

摘要： A semiconductor device in accordance with one embodiment of the invention can include a substrate onto which a wiring pattern is formed. In addition, the semiconductor device can include a plurality of semiconductor packages. Each semiconductor package can include a lead frame that is coupled to an electrode of a semiconductor chip. Each lead frame can be located on a side surface and a bottom surface of the semiconductor package. In addition, the semiconductor device can include a pressure-contact section for receiving the plurality of semiconductor packages and for causing the plurality of semiconductor packages to come into contact with the wiring pattern.

摘要翻译： 根据本发明的一个实施例的半导体器件可以包括其上形成有布线图案的基板。 此外，半导体器件可以包括多个半导体封装。 每个半导体封装可以包括耦合到半导体芯片的电极的引线框架。 每个引线框架可以位于半导体封装的侧表面和底表面上。 此外，半导体器件可以包括用于接收多个半导体封装件并且使多个半导体封装件与布线图案接触的压接部分。

公开(公告)号：US08039943B2

公开(公告)日：2011-10-18

申请号：US12239566

申请日：2008-09-26

申请人： Masahiko Harayama ,  Kouichi Meguro ,  Junichi Kasai

发明人： Masahiko Harayama ,  Kouichi Meguro ,  Junichi Kasai

IPC分类号： H01L23/48

CPC分类号： H01L23/3107 ,  H01L21/565 ,  H01L21/566 ,  H01L23/5389 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06568 ,  H01L2225/1029 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2224/92247 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device is provided that includes a semiconductor chip and a resin section that molds the semiconductor chip and has a first through-hole. A through electrode that is electrically coupled to the semiconductor chip, extends through the resin section, and extends between a top edge and a bottom edge of an inner surface of the first through-hole. A cavity which extends between planes corresponding to an upper surface and a lower surface of the resin section is formed inside the first through-hole.

摘要翻译： 提供一种半导体器件，其包括半导体芯片和模制半导体芯片并具有第一通孔的树脂部分。 电耦合到半导体芯片的通孔延伸穿过树脂部分，并且在第一通孔的内表面的顶边缘和底边之间延伸。 在第一通孔的内部形成有在与树脂部的上表面和下表面对应的面之间延伸的空腔。

公开(公告)号：US08446015B2

公开(公告)日：2013-05-21

申请号：US13015072

申请日：2011-01-27

申请人： Naomi Masuda ,  Kouichi Meguro

发明人： Naomi Masuda ,  Kouichi Meguro

IPC分类号： H01L23/52 ,  H01L23/48 ,  H01L29/40

CPC分类号： H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3107 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2224/05554 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48475 ,  H01L2224/48599 ,  H01L2224/49175 ,  H01L2224/85051 ,  H01L2224/85951 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15331 ,  H01L2924/18165 ,  H01L2224/85 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A semiconductor device has a first semiconductor chip 10 molded with a resin 12, a first metal 14 provided in the resin 12 in a circumference of the first semiconductor chip 10, and being exposed on a lower surface of the resin 12, a second metal 16 provided in the resin 12 over the first metal 14, and being exposed on an upper surface of the resin 12, and a first wire 18 coupling the first semiconductor chip 10 to the first metal 14 and the second metal 16. The first wire 18 is coupled to the first metal 14 and the second metal 16 so as to be sandwiched therebetween.

摘要翻译： 半导体器件具有由树脂12成型的第一半导体芯片10，在第一半导体芯片10的周围设置在树脂12中的第一金属14，露出在树脂12的下表面上，第二金属16 设置在第一金属14上的树脂12中并暴露在树脂12的上表面上，以及将第一半导体芯片10连接到第一金属14和第二金属16的第一布线18。 耦合到第一金属14和第二金属16以便夹在其间。

公开(公告)号：US07892892B2

公开(公告)日：2011-02-22

申请号：US12165331

申请日：2008-06-30

申请人： Naomi Masuda ,  Kouichi Meguro

发明人： Naomi Masuda ,  Kouichi Meguro

IPC分类号： H01L21/00

CPC分类号： H01L21/561 ,  H01L21/568 ,  H01L21/6835 ,  H01L23/3107 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2224/05554 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48475 ,  H01L2224/48599 ,  H01L2224/49175 ,  H01L2224/85051 ,  H01L2224/85951 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15331 ,  H01L2924/18165 ,  H01L2224/85 ,  H01L2224/85399 ,  H01L2224/05599

摘要： A semiconductor device has a first semiconductor chip 10 molded with a resin 12, a first metal 14 provided in the resin 12 in a circumference of the first semiconductor chip 10, and being exposed on a lower surface of the resin 12, a second metal 16 provided in the resin 12 over the first metal 14, and being exposed on an upper surface of the resin 12, and a first wire 18 coupling the first semiconductor chip 10 to the first metal 14 and the second metal 16. The first wire 18 is coupled to the first metal 14 and the second metal 16 so as to be sandwiched therebetween.

摘要翻译： 半导体器件具有由树脂12成型的第一半导体芯片10，在第一半导体芯片10的周围设置在树脂12中的第一金属14，露出在树脂12的下表面，第二金属16 设置在第一金属14上的树脂12中并暴露在树脂12的上表面上，以及将第一半导体芯片10连接到第一金属14和第二金属16的第一布线18。 耦合到第一金属14和第二金属16以便夹在其间。

公开(公告)号：US07683473B2

公开(公告)日：2010-03-23

申请号：US11540034

申请日：2006-09-28

申请人： Junichi Kasai ,  Kouichi Meguro ,  Masanori Onodera

发明人： Junichi Kasai ,  Kouichi Meguro ,  Masanori Onodera

IPC分类号： H01L23/04 ,  H01L21/30

CPC分类号： H01L25/0657 ,  H01L21/563 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/73257 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15173 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19104 ,  H05K3/323 ,  H05K2203/107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： The present invention provides a semiconductor device, a fabrication method therefor, and a film fabrication method, the semiconductor device including a first substrate (e.g., a semiconductor chip), an anisotropic conductive film that is provided on the first substrate and has a wiring pattern having at least a portion providing conduction through the anisotropic conductive film, and a second substrate (semiconductor chip) provided on the anisotropic conductive film and coupled to the first substrate via the portion providing conduction through the anisotropic conductive film. According to the present invention, it is possible to provide a semiconductor device, a fabrication method therefor, and a film fabrication method, by which production costs can be reduced in electrically coupling different positions in upper and lower substrates.

摘要翻译： 本发明提供一种半导体器件及其制造方法和膜制造方法，该半导体器件包括第一衬底（例如，半导体芯片），各向异性导电膜，其设置在第一衬底上并具有布线图案 具有通过各向异性导电膜提供导电的至少一部分，以及设置在各向异性导电膜上的第二基板（半导体芯片），并且经由各向异性导电膜提供导电的部分与第一基板耦合。 根据本发明，可以提供一种半导体器件及其制造方法和薄膜制造方法，通过该方法可以降低在上下基板中电连接不同位置的生产成本。