公开(公告)号：US07888714B2

公开(公告)日：2011-02-15

申请号：US11226472

申请日：2005-09-15

申请人： Hidekazu Takahashi ,  Junya Maruyama ,  Daiki Yamada ,  Naoto Kusumoto ,  Kazuo Nishi ,  Hiroki Adachi ,  Yuusuke Sugawara

发明人： Hidekazu Takahashi ,  Junya Maruyama ,  Daiki Yamada ,  Naoto Kusumoto ,  Kazuo Nishi ,  Hiroki Adachi ,  Yuusuke Sugawara

IPC分类号： H01L31/062

CPC分类号： H01L27/1214 ,  H01L27/14609 ,  H01L27/14645 ,  H01L27/14692

摘要： Considering further promotion of high output and miniaturization of a sensor element, it is an object of the present invention to form a plurality of elements in a limited area so that an area occupied by the element is reduced for integration. It is another object to provide a process which improves the yield of a sensor element. According to the present invention, a sensor element using an amorphous silicon film and an output amplifier circuit constituted by a thin film transistor are formed over a substrate having an insulating surface. In addition, a metal layer for protecting an exposed wire when a photoelectric conversion layer of the sensor element is patterned is provided between the photoelectric conversion layer and the wire connected to the thin film transistor.

摘要翻译： 考虑到传感器元件的高输出和小型化的进一步促进，本发明的目的是在有限的区域中形成多个元件，使得元件占据的面积减小以便集成。 另一个目的是提供一种提高传感器元件的产量的方法。 根据本发明，在具有绝缘表面的基板上形成使用非晶硅膜的传感器元件和由薄膜晶体管构成的输出放大电路。 此外，在光电转换层与连接到薄膜晶体管的导线之间设置用于在传感器元件的光电转换层被图案化时用于保护裸线的金属层。

公开(公告)号：US20110000545A1

公开(公告)日：2011-01-06

申请号：US12820439

申请日：2010-06-22

申请人： Kazuo Nishi ,  Naoto Kusumoto

发明人： Kazuo Nishi ,  Naoto Kusumoto

IPC分类号： H01L31/105 ,  H01L31/18

CPC分类号： H01L31/022433 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/046 ,  H01L31/0463 ,  H01L31/0465 ,  H01L31/075 ,  H01L31/202 ,  Y02E10/548 ,  Y02P70/521

摘要： A stack including a first electrode, a first impurity semiconductor layer having one conductivity type, an intrinsic semiconductor layer, a second impurity semiconductor layer having an opposite conductivity type to the one conductivity type, and a light-transmitting second electrode is formed over an insulator. The light-transmitting second electrode and the second impurity semiconductor layer have one or more openings. The shortest distance between one portion of the wall of one opening and an opposite portion of the wall of the same opening at the level of the interface between the second impurity semiconductor layer and the intrinsic semiconductor layer is made smaller than the diffusion length of holes in the intrinsic semiconductor layer. Thus, recombination is suppressed, so that more photocarriers are generated due to the openings and taken out as current, whereby conversion efficiency is increased.

摘要翻译： 包括第一电极，具有一种导电类型的第一杂质半导体层，本征半导体层，与一种导电类型具有相反导电类型的第二杂质半导体层和透光第二电极的堆叠形成在绝缘体 。 透光第二电极和第二杂质半导体层具有一个或多个开口。 在第二杂质半导体层和本征半导体层之间的界面的水平处，一个开口的一个壁的一部分与相同开口的壁的相对部分之间的最短距离小于孔的扩散长度 本征半导体层。 因此，抑制复合，使得由于开口而产生更多的光载流子作为电流而被取出，从而提高了转换效率。

公开(公告)号：US07838812B2

公开(公告)日：2010-11-23

申请号：US12350271

申请日：2009-01-08

申请人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

发明人： Kazuo Nishi ,  Tatsuya Arao ,  Atsushi Hirose ,  Yuusuke Sugawara ,  Naoto Kusumoto ,  Daiki Yamada ,  Hidekazu Takahashi

IPC分类号： H01J40/14 ,  H03F3/08 ,  H03K17/78 ,  H04N3/14

CPC分类号： H01L31/102 ,  G01J1/44 ,  H01L31/145 ,  H04N5/2351

摘要： The present invention provides a photoelectric conversion device capable of detecting light from weak light to strong light and relates to a photoelectric conversion device having a photodiode having a photoelectric conversion layer; an amplifier circuit including a transistor; and a switch, where the photodiode and the amplifier circuit are electrically connected to each other by the switch when intensity of entering light is lower than predetermined intensity so that a photoelectric current is amplified by the amplifier circuit to be outputted, and the photodiode and part or all of the amplifier circuits are electrically disconnected by the switch so that a photoelectric current is reduced in an amplification factor to be outputted. According to such a photoelectric conversion device, light from weak light to strong light can be detected.

摘要翻译： 本发明提供一种能够检测弱光到强光的光的光电转换装置，涉及具有光电转换层的光电二极管的光电转换装置; 包括晶体管的放大器电路; 以及开关，其中当入射光的强度低于预定强度时，光电二极管和放大器电路通过开关彼此电连接，使得光电流被放大器电路放大以输出，并且光电二极管和部分 或者所有的放大器电路都被开关电断开，使得放大系数中的光电流减小以被输出。 根据这样的光电转换装置，能够检测弱光到强光的光。

公开(公告)号：US07772667B2

公开(公告)日：2010-08-10

申请号：US11383645

申请日：2006-05-16

申请人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

发明人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

IPC分类号： H01L31/075

CPC分类号： H01L31/1055 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/02325

摘要： The present invention provides a photoelectric conversion device in which a leakage current is suppressed. A photoelectric conversion device of the present invention comprises: a first electrode over a substrate; a photoelectric conversion layer including a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode, wherein an end portion of the first electrode is covered with the first semiconductor layer; an insulating film, and a second electrode electrically connected to the third semiconductor film with the insulating film therebetween, over the insulating film, are formed over the third semiconductor film, and wherein a part of the second semiconductor layer and a part of the third semiconductor layer is removed in a region of the photoelectric conversion layer, which is not covered with the insulating film.

摘要翻译： 本发明提供抑制漏电流的光电转换装置。 本发明的光电转换装置包括：基板上的第一电极; 光电转换层，包括具有一个导电性的第一导电层，第二半导体层和具有与第一电极上的第二半导体层的一个导电率相反的导电性的第三半导体层，其中第一电极的端部为 覆盖第一半导体层; 在所述第三半导体膜上形成绝缘膜和在所述绝缘膜上与所述第三半导体膜电绝缘膜电连接的第二电极，并且其中所述第二半导体层的一部分和所述第三半导体的一部分 在光电转换层的未被绝缘膜覆盖的区域中去除层。

公开(公告)号：US20080108205A1

公开(公告)日：2008-05-08

申请号：US12000599

申请日：2007-12-14

申请人： Kazuo Nishi ,  Hiroki Adachi ,  Junya Maruyama ,  Naoto Kusumoto ,  Yuusuke Sugawara ,  Tomoyuki Aoki ,  Eiji Sugiyama ,  Hironobu Takahashi

发明人： Kazuo Nishi ,  Hiroki Adachi ,  Junya Maruyama ,  Naoto Kusumoto ,  Yuusuke Sugawara ,  Tomoyuki Aoki ,  Eiji Sugiyama ,  Hironobu Takahashi

IPC分类号： H01L21/44 ,  H01L21/02

CPC分类号： H01L31/0203 ,  H01L27/1446 ,  H01L27/14618 ,  H01L31/048 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

摘要： The present invention provides a semiconductor device formed over an insulating substrate, typically a semiconductor device having a structure in which mounting strength to a wiring board can be increased in an optical sensor, a solar battery, or a circuit using a TFT, and which can make it mount on a wiring board with high density, and further a method for manufacturing the same. According to the present invention, in a semiconductor device, a semiconductor element is formed on an insulating substrate, a concave portion is formed on a side face of the semiconductor device, and a conductive film electrically connected to the semiconductor element is formed in the concave portion.

摘要翻译： 本发明提供一种半导体器件，其形成在绝缘基板上，通常是半导体器件，其具有可以在光学传感器，太阳能电池或使用TFT的电路中增加布线板的安装强度的结构，并且其可以 使其安装在高密度的布线板上，并且还提供其制造方法。 根据本发明，在半导体器件中，半导体元件形成在绝缘基板上，在半导体器件的侧面形成有凹部，与半导体元件电连接的导电膜形成在凹部 一部分。

公开(公告)号：US20060260675A1

公开(公告)日：2006-11-23

申请号：US11383645

申请日：2006-05-16

申请人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

发明人： Yuusuke Sugawara ,  Kazuo Nishi ,  Tatsuya Arao ,  Daiki Yamada ,  Hidekazu Takahashi ,  Naoto Kusumoto

IPC分类号： H01L31/00

CPC分类号： H01L31/1055 ,  H01L31/02162 ,  H01L31/022408 ,  H01L31/02325

摘要： The present invention provides a photoelectric conversion device in which a leakage current is suppressed. A photoelectric conversion device of the present invention comprises: a first electrode over a substrate; a photoelectric conversion layer including a first conductive layer having one conductivity, a second semiconductor layer, and a third semiconductor layer having a conductivity opposite to the one conductivity of the second semiconductor layer over the first electrode, wherein an end portion of the first electrode is covered with the first semiconductor layer; an insulating film, and a second electrode electrically connected to the third semiconductor film with the insulating film therebetween, over the insulating film, are formed over the third semiconductor film, and wherein a part of the second semiconductor layer and a part of the third semiconductor layer is removed in a region of the photoelectric conversion layer, which is not covered with the insulating film.

摘要翻译： 本发明提供抑制漏电流的光电转换装置。 本发明的光电转换装置包括：基板上的第一电极; 光电转换层，包括具有一个导电性的第一导电层，第二半导体层和具有与第一电极上的第二半导体层的一个导电率相反的导电性的第三半导体层，其中第一电极的端部为 覆盖第一半导体层; 在所述第三半导体膜上形成绝缘膜和在所述绝缘膜上与所述第三半导体膜电绝缘膜电连接的第二电极，并且其中所述第二半导体层的一部分和所述第三半导体的一部分 在光电转换层的未被绝缘膜覆盖的区域中去除层。

公开(公告)号：US20050116310A1

公开(公告)日：2005-06-02

申请号：US10957747

申请日：2004-10-05

申请人： Kazuo Nishi ,  Hiroki Adachi ,  Junya Maruyama ,  Naoto Kusumoto ,  Yuusuke Sugawara ,  Tomoyuki Aoki ,  Eiji Sugiyama ,  Hironobu Takahashi

发明人： Kazuo Nishi ,  Hiroki Adachi ,  Junya Maruyama ,  Naoto Kusumoto ,  Yuusuke Sugawara ,  Tomoyuki Aoki ,  Eiji Sugiyama ,  Hironobu Takahashi

IPC分类号： H01L23/538 ,  H01L21/00 ,  H01L23/00 ,  H01L27/06 ,  H01L27/12 ,  H01L27/14 ,  H01L27/144 ,  H01L27/146 ,  H01L29/78 ,  H01L29/786 ,  H01L29/792 ,  H01L29/861 ,  H01L31/00 ,  H01L31/02 ,  H01L31/0203 ,  H01L31/0392 ,  H01L31/048 ,  H01L31/18

CPC分类号： H01L31/0203 ,  H01L27/1446 ,  H01L27/14618 ,  H01L31/048 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

摘要： The present invention provides a semiconductor device formed over an insulating substrate, typically a semiconductor device having a structure in which mounting strength to a wiring board can be increased in an optical sensor, a solar battery, or a circuit using a TFT, and which can make it mount on a wiring board with high density, and further a method for manufacturing the same. According to the present invention, in a semiconductor device, a semiconductor element is formed on an insulating substrate, a concave portion is formed on a side face of the semiconductor device, and a conductive film electrically connected to the semiconductor element is formed in the concave portion.

摘要翻译： 本发明提供一种半导体器件，其形成在绝缘基板上，通常是半导体器件，其具有可以在光学传感器，太阳能电池或使用TFT的电路中增加布线板的安装强度的结构，并且其可以 使其安装在高密度的布线板上，并且还提供其制造方法。 根据本发明，在半导体器件中，半导体元件形成在绝缘基板上，在半导体器件的侧面形成有凹部，与半导体元件电连接的导电膜形成在凹部 一部分。

公开(公告)号：US09214587B2

公开(公告)日：2015-12-15

申请号：US13212395

申请日：2011-08-18

申请人： Kazuo Nishi ,  Yasushi Maeda ,  Ryosuke Motoyoshi ,  Yuji Oda ,  Kei Takahashi ,  Yoshiaki Ito ,  Tatsuji Nishijima

发明人： Kazuo Nishi ,  Yasushi Maeda ,  Ryosuke Motoyoshi ,  Yuji Oda ,  Kei Takahashi ,  Yoshiaki Ito ,  Tatsuji Nishijima

IPC分类号： H01L31/0224 ,  H01L31/075 ,  H01L31/02 ,  H01L31/05 ,  H01L31/046

CPC分类号： H01L31/075 ,  H01L31/02008 ,  H01L31/046 ,  H01L31/0504 ,  Y02E10/548

摘要： A photoelectric conversion module in which an output voltage defect is suppressed is obtained by forming in parallel over a substrate n number (n is a natural number) of integrated photoelectric conversion devices each including a plurality of cells that are connected in series, and electrically connecting in parallel n−1 number or less of integrated photoelectric conversion devices with normal electrical characteristics and excluding an integrated photoelectric conversion device with a characteristic defect such as a short-circuit between top and bottom electrodes or a leak current due to a structural defect or the like formed in a semiconductor layer or the like.

摘要翻译： 通过在基板上平行地形成n个（n为自然数）的集成光电转换装置，其中包含多个串联连接的单元，并且电连接，得到抑制输出电压缺陷的光电转换模块 并联n-1个或更少的具有正常电特性的集成光电转换装置，并且不包括具有诸如顶部和底部电极之间的短路的特性缺陷或由于结构缺陷引起的漏电流的集成光电转换装置 如在半导体层等中形成的。

公开(公告)号：US09087950B2

公开(公告)日：2015-07-21

申请号：US12788862

申请日：2010-05-27

申请人： Shunpei Yamazaki ,  Yukie Suzuki ,  Kazuo Nishi

发明人： Shunpei Yamazaki ,  Yukie Suzuki ,  Kazuo Nishi

IPC分类号： H01L31/18 ,  H01L31/042 ,  H01L31/076 ,  B60T1/10 ,  H01L31/0368 ,  H01L31/0392 ,  H01L31/048 ,  H01L31/0687 ,  H01L31/043

CPC分类号： H01L31/076 ,  B60T1/10 ,  H01L31/03685 ,  H01L31/03926 ,  H01L31/043 ,  H01L31/048 ,  H01L31/0488 ,  H01L31/0687 ,  H01L2924/0002 ,  H01L2924/09701 ,  Y02E10/544 ,  Y02E10/545 ,  Y02E10/548 ,  Y02E10/549 ,  Y02P70/521 ,  H01L2924/00

摘要： A multi-junction photoelectric conversion device that can be manufactured by a simple method is provided. In addition, a photoelectric conversion device whose mechanical strength is increased without complicating a manufacturing process is provided. A photoelectric conversion device includes a first cell having a photoelectric conversion function, a second cell having a photoelectric conversion function, and a structure body including a fibrous body, which firmly attaches and electrically connects the first cell and the second cell to each other. Accordingly, a multi-junction photoelectric conversion device in which semiconductor junctions are connected in series and sufficient electrical connection between p-i-n junctions is ensured can be provided.

摘要翻译： 提供可以通过简单的方法制造的多结光电转换装置。 此外，提供了机械强度提高而不使制造过程复杂化的光电转换装置。 光电转换装置包括具有光电转换功能的第一单元，具有光电转换功能的第二单元和包括纤维体的结构体，其将第一单元和第二单元彼此牢固地连接并电连接。 因此，可以确保其中半导体接头串联连接并且在p-i-n结之间具有足够的电连接的多结光电转换装置。

公开(公告)号：US08455753B2

公开(公告)日：2013-06-04

申请号：US11324491

申请日：2006-01-04

申请人： Kazuo Nishi ,  Tomoyuki Aoki ,  Toshiyuki Isa ,  Gen Fujii

发明人： Kazuo Nishi ,  Tomoyuki Aoki ,  Toshiyuki Isa ,  Gen Fujii

IPC分类号： H01L31/00

CPC分类号： G04C10/02 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/0465 ,  H01L31/048 ,  H01L31/1884 ,  H01L31/202 ,  Y02E10/50 ,  Y02P70/521

摘要： It is an object of the present invention to minimize an electrode in a solar cell to minimize the solar cell. The present invention provides a method for manufacturing a solar cell comprising the steps of forming a first electrode layer over a substrate, forming a photoelectric conversion layer over the first electrode layer, forming an organic layer over the photoelectric conversion layer, forming an opening reaching the first electrode layer in the photoelectric conversion layer, and forming a second electrode layer by filling the opening with a conductive paste, wherein the organic layer modifies the surface of the photoelectric conversion layer and a contact angle between the conductive paste and the photoelectric conversion becomes greater. According to the present invention, wettability of a photoelectric conversion layer can be decreased by forming an organic layer on a surface of the photoelectric conversion layer. Thereby an electrode layer and an insulating isolation layer can be thinned.

摘要翻译： 本发明的目的是使太阳能电池中的电极最小化以最小化太阳能电池。 本发明提供一种太阳能电池的制造方法，包括以下步骤：在基板上形成第一电极层，在第一电极层上形成光电转换层，在光电转换层上形成有机层，形成开口到达 第一电极层，并且通过用导电膏填充开口形成第二电极层，其中有机层改性光电转换层的表面，并且导电糊和光电转换之间的接触角变得更大 。 根据本发明，通过在光电转换层的表面上形成有机层，可以降低光电转换层的润湿性。 由此，可以使电极层和绝缘隔离层变薄。