公开(公告)号：US20150004793A1

公开(公告)日：2015-01-01

申请号：US14491531

申请日：2014-09-19

Applicant: Lam Research Corporation

Inventor： Rajinder Dhindsa ,  Alexei Marakhatnov ,  Andrew D. Bailey, III

IPC: H01L21/3065 ,  H01L21/31

CPC classification number: H01L21/3065 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45576 ,  C23C16/50 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/31

Abstract: An electrode is exposed to a plasma generation volume and is defined to transmit radiofrequency power to the plasma generation volume, and includes an upper surface for holding a substrate in exposure to the plasma generation volume. A gas distribution unit is disposed above the plasma generation volume and in a substantially parallel orientation to the electrode. The gas distribution unit includes an arrangement of gas supply ports for directing an input flow of a plasma process gas into the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode. The gas distribution unit also includes an arrangement of through-holes that each extend through the gas distribution unit to fluidly connect the plasma generation volume to an exhaust region. Each of the through-holes directs an exhaust flow from the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode.

Abstract translation: 电极暴露于等离子体产生体积，并且被定义为将射频功率传递到等离子体产生体积，并且包括用于保持衬底暴露于等离子体产生体积的上表面。 气体分配单元设置在等离子体产生体积之上并且基本上平行于电极的取向。 气体分配单元包括用于将等离子体处理气体的输入流沿基本上垂直于电极的上表面的方向引导到等离子体产生体积中的气体供给端口的布置。 气体分配单元还包括通孔的布置，每个通孔延伸穿过气体分配单元以将等离子体产生体积流体连接到排气区域。 每个通孔在基本上垂直于电极的上表面的方向上引导来自等离子体产生体积的排气流。

公开(公告)号：US20140151333A1

公开(公告)日：2014-06-05

申请号：US14176493

申请日：2014-02-10

Applicant: Lam Research Corporation

Inventor： Richard Gottscho ,  Rajinder Dhindsa ,  Mukund Srinivasan

IPC: H01J37/32

CPC classification number: H01J37/32366 ,  C23C16/50 ,  C23C16/503 ,  C23C16/505 ,  C23C16/513 ,  H01J37/32082 ,  H01J37/32137 ,  H01J37/32376 ,  H01L21/6719 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

Abstract: A plasma deposition chamber is disclosed. A substrate support for supporting a surface to be processed is in the chamber. A processing head including an array of plasma microchambers is also in the chamber. Each of the plasma microchambers includes an open side disposed over at least a first portion of the surface to be processed. The open side has an area less than an entire area of the surface to be processed. A process gas source is coupled to the chamber to provide a process gas the array of plasma microchambers. A radio frequency power supply is connected to at least one electrode of the processing head. The array of plasma microchambers is configured to generate a plasma using the process gas to deposit a layer over the at least first portion of the surface to be processed. A method for performing a plasma deposition is also disclosed.

Abstract translation: 公开了一种等离子体沉积室。 用于支撑待处理表面的基板支撑件在室中。 包括等离子体微室的阵列的处理头也在室中。 每个等离子体微室包括设置在待处理表面的至少第一部分上的开口侧。 开放面的面积小于被处理面的整个面积。 工艺气体源耦合到腔室以提供等离子体微室的阵列的工艺气体。 射频电源连接到处理头的至少一个电极。 等离子体微室的阵列被配置为使用处理气体产生等离子体，以在要处理的表面的至少第一部分上沉积层。 还公开了一种用于进行等离子体沉积的方法。

公开(公告)号：US20140103806A1

公开(公告)日：2014-04-17

申请号：US13653923

申请日：2012-10-17

Applicant: LAM RESEARCH CORPORATION

Inventor： Michael C. Kellogg ,  Rajinder Dhindsa ,  Tom Stevenson

IPC: B05B1/24 ,  H05H1/24

CPC classification number: H01J37/32449

Abstract: A showerhead electrode assembly for a plasma processing chamber, which includes a showerhead electrode; a heater plate secured to the showerhead electrode; at least one pressure controlled heat pipe secured to an upper surface of the heater plate, the at least one pressure controlled heat pipe having a heat transfer liquid contained therein, and a pressurized gas, which produces a variable internal pressure within the at least one pressure controlled heat pipe; a top plate secured to an upper surface of the at least one heat pipe; and wherein the variable internal pressure within the at least one pressure controlled heat pipe during heating of the showerhead electrode by the heater plate displaces the heat transfer liquid from a thermal path between the top plate and the heater plate, and when removing excess heat from the showerhead electrode returns the heat transfer liquid to the thermal path.

Abstract translation: 一种用于等离子体处理室的喷头电极组件，其包括喷头电极; 固定在喷头电极上的加热板; 至少一个受压控制的热管固定到加热器板的上表面，所述至少一个压力控制的热管具有其中包含的传热液体，以及加压气体，其在所述至少一个压力内产生可变的内部压力 受控热管; 固定到所述至少一个热管的上表面的顶板; 并且其中，通过所述加热板加热所述喷头电极期间所述至少一个压力控制热管内的可变内部压力将所述传热液体从所述顶板和所述加热板之间的热路径移位，并且当从所述加热板 喷头电极将热传递液体返回到热路径。

公开(公告)号：US20130280914A1

公开(公告)日：2013-10-24

申请号：US13919635

申请日：2013-06-17

Applicant: Lam Research Corporation

Inventor： Rajinder Dhindsa

IPC: H01L21/67

CPC classification number: H01L21/67069 ,  C23C16/45565 ,  C23C16/5096 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32605 ,  Y10T29/49002 ,  Y10T29/4913 ,  Y10T29/49401 ,  Y10T29/49428 ,  Y10T29/49769 ,  Y10T29/49895 ,  Y10T29/49959 ,  Y10T156/10

Abstract: A showerhead electrode for a plasma processing apparatus includes an interface gel between facing surfaces of an electrode plate and a backing plate. The interface gel maintains thermal conductivity during lateral displacements generated during temperature cycling due to mismatch in coefficients of thermal expansion. The interface gel comprises, for example, a silicone based composite filled with aluminum oxide microspheres. The interface gel can conform to irregularly shaped features and maximize surface contact area between mating surfaces. The interface gel can be pre-applied to a consumable upper electrode.

Abstract translation: 用于等离子体处理装置的喷头电极包括在电极板和背板的相对表面之间的界面凝胶。 界面凝胶在温度循环期间由于热膨胀系数不匹配而产生的横向位移期间保持导热性。 界面凝胶包括例如填充有氧化铝微球的硅氧烷基复合材料。 界面凝胶可以符合不规则形状的特征并最大化配合表面之间的表面接触面积。 界面凝胶可以预先施加到可消耗的上电极上。

公开(公告)号：US20200303171A1

公开(公告)日：2020-09-24

申请号：US16899533

申请日：2020-06-11

Applicant: Lam Research Corporation

Inventor： Rajinder Dhindsa ,  Akira Koshiishi ,  Alexei Marakhatanov

IPC: H01J37/32

Abstract: An apparatus for confining plasma within a plasma processing chamber is provided. The plasma processing chamber includes a lower electrode for supporting a substrate and an upper electrode disposed over the lower electrode. The apparatus is a confinement ring that includes a lower horizontal section extending between an inner lower radius and an outer radius of the confinement ring. The lower horizontal section includes an extension section that bends vertically downward at the inner lower radius, and the lower horizontal section further includes a plurality of slots. The confinement ring further includes an upper horizontal section extending between an inner upper radius and the outer radius of the confinement ring and a vertical section that integrally connects the lower horizontal section with the upper horizontal section. The extension section of the lower horizontal section is configured to surround the lower electrode when installed in the plasma processing chamber.

公开(公告)号：US20200243307A1

公开(公告)日：2020-07-30

申请号：US16845723

申请日：2020-04-10

Applicant: Lam Research Corporation

Inventor： Ryan Bise ,  Rajinder Dhindsa ,  Alexei Marakhtanov ,  Lumin Li ,  Sang Ki Nam ,  Jim Rogers ,  Eric Hudson ,  Gerardo Delgadino ,  Andrew D. Bailey, III ,  Mike Kellogg ,  Anthony de la Llera ,  Darrell Ehrlich

IPC: H01J37/32

Abstract: A plasma processing system includes a plasma chamber having a substrate support, and a multi-zone gas injection upper electrode disposed opposite the substrate support. An inner plasma region is defined between the upper electrode and the substrate support. The multi-zone gas injection upper electrode has a plurality of concentric gas injection zones. A confinement structure, which surrounds the inner plasma region, has an upper horizontal wall that interfaces with the outer electrode of the upper electrode. The confinement structure has a lower horizontal wall that interfaces with the substrate support, and includes a perforated confinement ring and a vertical wall that extends from the upper horizontal wall to the lower horizontal wall. The lower surface of the upper horizontal wall, an inner surface of the vertical wall, and an upper surface of the lower horizontal wall define a boundary of an outer plasma region, which surrounds the inner plasma region.

公开(公告)号：US09793126B2

公开(公告)日：2017-10-17

申请号：US14033241

申请日：2013-09-20

Applicant: Lam Research Corporation

Inventor： Rajinder Dhindsa ,  Sang Ki Nam ,  Alexei Marakhtanov ,  Eric A. Hudson

IPC: C23C14/34 ,  H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/67069 ,  H01J37/32357 ,  H01J37/32422 ,  H01J2237/334 ,  H01L21/3065

Abstract: The disclosed techniques relate to methods and apparatus for etching a substrate. A plate assembly divides a reaction chamber into a lower and upper sub-chamber. The plate assembly includes an upper and lower plate having apertures therethrough. When the apertures in the upper and lower plates are aligned, ions and neutral species may travel through the plate assembly into the lower sub-chamber. When the apertures are not aligned, ions are prevented from passing through the assembly while neutral species are much less affected. Thus, the ratio of ion flux:neutral flux may be tuned by controlling the amount of area over which the apertures are aligned. In certain embodiments, one plate of the plate assembly is implemented as a series of concentric, independently movable injection control rings. Further, in some embodiments, the upper sub-chamber is implemented as a series of concentric plasma zones separated by walls of insulating material.

公开(公告)号：US20170213747A9

公开(公告)日：2017-07-27

申请号：US14033241

申请日：2013-09-20

Applicant: Lam Research Corporation

Inventor： Rajinder Dhindsa ,  Sang Ki Nam ,  Alexei Marakhtanov ,  Eric A. Hudson

IPC: H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32357 ,  H01J37/32422 ,  H01J2237/334 ,  H01L21/3065

Abstract: The disclosed techniques relate to methods and apparatus for etching a substrate. A plate assembly divides a reaction chamber into a lower and upper sub-chamber. The plate assembly includes an upper and lower plate having apertures therethrough. When the apertures in the upper and lower plates are aligned, ions and neutral species may travel through the plate assembly into the lower sub-chamber. When the apertures are not aligned, ions are prevented from passing through the assembly while neutral species are much less affected. Thus, the ratio of ion flux:neutral flux may be tuned by controlling the amount of area over which the apertures are aligned. In certain embodiments, one plate of the plate assembly is implemented as a series of concentric, independently movable injection control rings. Further, in some embodiments, the upper sub-chamber is implemented as a series of concentric plasma zones separated by walls of insulating material.

公开(公告)号：US09401264B2

公开(公告)日：2016-07-26

申请号：US14043574

申请日：2013-10-01

Applicant: Lam Research Corporation

Inventor： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Ken Lucchesi ,  Luc Albarede

IPC: H01J7/24 ,  H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32174 ,  H01J37/32449 ,  H01J37/32532 ,  H01J2237/3323 ,  H01J2237/3344

Abstract: A plasma system includes an RF generator and a matchbox including an impedance matching circuit, which is coupled to the RF generator via an RF cable. The plasma system includes a chuck and a plasma reactor coupled to the matchbox via an RF line. The RF line forms a portion of an RF supply path, which extends between the RF generator through the matchbox, and to the chuck. The plasma system further includes a phase adjusting circuit coupled to the RF supply path between the impedance matching circuit and the chuck. The phase adjusting circuit has an end coupled to the RF supply path and another end that is grounded. The plasma system includes a controller coupled to the phase adjusting circuit. The controller is used for changing a parameter of the phase adjusting circuit to control an impedance of the RF supply path based on a tune recipe.

Abstract translation: 等离子体系统包括RF发生器和包括阻抗匹配电路的火柴盒，其通过RF电缆耦合到RF发生器。 等离子体系统包括通过RF线耦合到火柴盒的卡盘和等离子体反应器。 RF线形成RF供应路径的一部分，RF供应路径在RF发生器之间通过火柴盒和卡盘延伸。 等离子体系统还包括耦合到阻抗匹配电路和卡盘之间的RF供给路径的相位调整电路。 相位调整电路具有耦合到RF供给路径的一端和接地的另一端。 等离子体系统包括耦合到相位调整电路的控制器。 控制器用于改变相位调整电路的参数，以基于调谐配方控制RF供应路径的阻抗。

公开(公告)号：US20160148786A1

公开(公告)日：2016-05-26

申请号：US15011112

申请日：2016-01-29

Applicant: Lam Research Corporation

Inventor： Alexei Marakhtanov ,  Rajinder Dhindsa ,  Eric Hudson ,  Andrew D. Bailey, III

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/311

Abstract: Embodiments for processing a substrate in a pulsed plasma chamber are provided. A processing apparatus with two chambers, separated by a plate fluidly connecting the chambers, includes a continuous wave (CW) controller, a pulse controller, and a system controller. The CW controller sets the voltage and the frequency for a first radio frequency (RF) power source coupled to a top electrode. The pulse controller is operable to set voltage, frequency, ON-period duration, and OFF-period duration for a pulsed RF signal generated by a second RF power source coupled to the bottom electrode. The system controller is operable to set parameters to regulate the flow of species between the chambers to assist in the negative-ion etching, to neutralize excessive positive charge on the wafer surface during afterglow in the OFF period, and to assist in the re-striking of the bottom plasma during the ON period.

Abstract translation: 提供了用于在脉冲等离子体室中处理衬底的实施例。 具有两个腔室的处理装置，由流体连接腔室的板分开，包括连续波（CW）控制器，脉冲控制器和系统控制器。 CW控制器设置耦合到顶部电极的第一射频（RF）电源的电压和频率。 脉冲控制器可操作地为耦合到底部电极的第二RF电源产生的脉冲RF信号设置电压，频率，接通周期持续时间和关闭周期持续时间。 系统控制器可操作以设定参数以调节室之间的物质流动，以辅助负离子蚀刻，以在关闭期间中止余辉期间晶片表面上的过多正电荷，并且辅助重击 在ON期间的底部等离子体。