公开(公告)号：US10566194B2

公开(公告)日：2020-02-18

申请号：US15972918

申请日：2018-05-07

Applicant: Lam Research Corporation

Inventor： Nagraj Shankar ,  Kapu Sirish Reddy ,  Jon Henri ,  Pengyi Zhang ,  Elham Mohimi ,  Bhavin Jariwala ,  Arpan Pravin Mahorowala

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/02 ,  C23C16/455 ,  H01L21/67 ,  C23F1/08

Abstract: Methods, systems, and computer programs are presented for selective deposition of etch-stop layers for enhanced patterning during semiconductor manufacturing. One method includes an operation for adding a photo-resist material (M2) on top of a base material (M1) of a substrate, M2 defining a pattern for etching M1 in areas where M2 is not present above M1. The method further includes operations for conformally capping the substrate with an oxide material (M3) after adding M2, and for gap filling the substrate with filling material M4 after the conformally capping. Further, a stop-etch material (M5) is selectively grown on exposed surfaces of M3 and not on surfaces of M4 after the gap filling. Additionally, the method includes operations for removing M4 from the substrate after selectively growing M5, and for etching the substrate after removing M4 to transfer the pattern into M1. M5 adds etching protection to enable deeper etching into M1.

公开(公告)号：US20190352777A1

公开(公告)日：2019-11-21

申请号：US15982913

申请日：2018-05-17

Applicant: Lam Research Corporation

Inventor： Nagraj Shankar ,  Jeffrey D. Womack ,  Meliha Gozde Rainville ,  Emile C. Draper ,  Pankaj G. Ramnani ,  Feng Bi ,  Pengyi Zhang ,  Elham Mohimi ,  Kapu Sirish Reddy

IPC: C23C16/455 ,  H01L21/02

Abstract: Showerheads for independently delivering different, mutually-reactive process gases to a wafer processing space are provided. The showerheads include a first gas distributor that has multiple plenum structures that are separated from one another by a gap, as well as a second gas distributor positioned above the first gas distributor. Isolation gas from the second gas distributor may be flowed down onto the first gas distributor and through the gaps in between the plenum structures of the first gas distributor, thereby establishing an isolation gas curtain that prevents the process gases released from each plenum structure from parasitically depositing on the plenum structures that provide other gases.

公开(公告)号：US10199235B2

公开(公告)日：2019-02-05

申请号：US15874793

申请日：2018-01-18

Applicant: Lam Research Corporation

Inventor： Hui-Jung Wu ,  Thomas Joseph Knisley ,  Nagraj Shankar ,  Meihua Shen ,  John Hoang ,  Prithu Sharma

IPC: H01L21/3213 ,  H01J37/32 ,  H01L21/768 ,  H01L23/532 ,  C23C16/02 ,  C23C16/04 ,  C23C16/16 ,  C23C16/54 ,  H01L21/02

Abstract: Methods and techniques for fabricating metal interconnects, lines, or vias by subtractive etching and liner deposition methods are provided. Methods involve depositing a blanket copper layer, removing regions of the blanket copper layer to form a pattern, treating the patterned metal, depositing a copper-dielectric interface material such that the copper-dielectric interface material adheres only to the patterned copper, depositing a dielectric barrier layer on the substrate, and depositing a dielectric bulk layer on the substrate.

公开(公告)号：US20180342389A1

公开(公告)日：2018-11-29

申请号：US16037932

申请日：2018-07-17

Applicant: Lam Research Corporation

Inventor： Kapu Sirish Reddy ,  Nagraj Shankar ,  Shankar Swaminathan ,  Meliha Gozde Rainville ,  Frank L. Pasquale

IPC: H01L21/02 ,  H01L21/768 ,  C23C16/455 ,  C23C16/40 ,  H01L23/532 ,  H01L23/528

CPC classification number: H01L21/02145 ,  C23C16/401 ,  C23C16/403 ,  C23C16/45525 ,  C23C16/45531 ,  C23C16/45542 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31116 ,  H01L21/76807 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/5283 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295

Abstract: Dielectric composite films characterized by a dielectric constant (k) of less than about 7 and having a density of at least about 2.5 g/cm3 are deposited on partially fabricated semiconductor devices to serve as etch stop layers. The dielectric composite film in one embodiment includes Al, Si, and O and has a thickness of between about 10-100 Å. The dielectric composite film can reside between two layers of inter-layer dielectric, and may be in contact with metal layers. An apparatus for depositing such dielectric composite films includes a process chamber, a conduit for delivering an aluminum containing precursor to the process chamber, a second conduit for delivering a silicon-containing precursor to the process chamber and a controller having program instructions for depositing the dielectric composite film from these precursors, e.g., by reacting the precursors adsorbed to the substrate with an oxygen-containing species.

公开(公告)号：US10049869B2

公开(公告)日：2018-08-14

申请号：US15282543

申请日：2016-09-30

Applicant: Lam Research Corporation

Inventor： Kapu Sirish Reddy ,  Nagraj Shankar ,  Shankar Swaminathan ,  Meliha Gozde Rainville ,  Frank L. Pasquale

IPC: H01L21/02 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  C23C16/40 ,  C23C16/455

Abstract: Dielectric composite films characterized by a dielectric constant (k) of less than about 7 and having a density of at least about 2.5 g/cm3 are deposited on partially fabricated semiconductor devices to serve as etch stop layers. The composite films in one embodiment include at least two elements selected from the group consisting of Al, Si, and Ge, and at least one element selected from the group consisting of O, N, and C. In one embodiment the composite film includes Al, Si and O. In one implementation, a substrate containing an exposed dielectric layer (e.g., a ULK dielectric) and an exposed metal layer is contacted with an aluminum-containing compound (such as trimethylaluminum) and, sequentially, with a silicon-containing compound. Adsorbed compounds are then treated with an oxygen-containing plasma (e.g., plasma formed in a CO2-containing gas) to form a film that contains Al, Si, and O.

公开(公告)号：US20180096886A1

公开(公告)日：2018-04-05

申请号：US15282543

申请日：2016-09-30

Applicant: Lam Research Corporation

Inventor： Kapu Sirish Reddy ,  Nagraj Shankar ,  Shankar Swaminathan ,  Meliha Gozde Rainville ,  Frank L. Pasquale

IPC: H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L21/02

CPC classification number: H01L21/02145 ,  C23C16/401 ,  C23C16/403 ,  C23C16/45525 ,  C23C16/45531 ,  C23C16/45542 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/76832 ,  H01L23/5283 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295

Abstract: Dielectric composite films characterized by a dielectric constant (k) of less than about 7 and having a density of at least about 2.5 g/cm3 are deposited on partially fabricated semiconductor devices to serve as etch stop layers. The composite films in one embodiment include at least two elements selected from the group consisting of Al, Si, and Ge, and at least one element selected from the group consisting of O, N, and C. In one embodiment the composite film includes Al, Si and O. In one implementation, a substrate containing an exposed dielectric layer (e.g., a ULK dielectric) and an exposed metal layer is contacted with an aluminum-containing compound (such as trimethylaluminum) and, sequentially, with a silicon-containing compound. Adsorbed compounds are then treated with an oxygen-containing plasma (e.g., plasma formed in a CO2-containing gas) to form a film that contains Al, Si, and O.

公开(公告)号：US20170103914A1

公开(公告)日：2017-04-13

申请号：US14949533

申请日：2015-11-23

Applicant: Lam Research Corporation

Inventor： Daniel Damjanovic ,  Pramod Subramonium ,  Nagraj Shankar

IPC: H01L21/768 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L21/76831 ,  H01L21/02178 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76834 ,  H01L23/481

Abstract: Dielectric AlO, AlOC, AlON and AlOCN films characterized by a dielectric constant (k) of less than about 10 and having a density of at least about 2.5 g/cm3 are deposited on partially fabricated semiconductor devices to serve as etch stop layers and/or diffusion barriers. In one implementation, a substrate containing an exposed dielectric layer (e.g., a ULK dielectric) and an exposed metal layer is contacted with an aluminum-containing compound (such as trimethylaluminum) in an iALD process chamber and the aluminum-containing compound is allowed to adsorb onto the surface of the substrate. This step is performed in an absence of plasma. Next, the unadsorbed aluminum-containing compound is removed from the process chamber, and the substrate is treated with a process gas containing CO2 or N2O, and an inert gas in a plasma to form an AlO, AlOC, or AlON layer. These steps are then repeated.

公开(公告)号：US09418889B2

公开(公告)日：2016-08-16

申请号：US14742180

申请日：2015-06-17

Applicant: Lam Research Corporation

Inventor： Thomas Weller Mountsier ,  Hui-Jung Wu ,  Bhadri N. Varadarajan ,  Nagraj Shankar ,  William T. Lee

IPC: H01L21/44 ,  H01L21/768 ,  H01L21/02 ,  H01L23/532

CPC classification number: H01L21/76831 ,  H01L21/02126 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/321 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76877 ,  H01L23/53238 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A dielectric diffusion barrier is deposited on a substrate that has a via and an overlying trench etched into an exposed layer of inter-layer dielectric, wherein there is exposed metal from the underlying interconnect at the bottom of the via. In order to provide a conductive path from the underlying metallization layer to the metallization layer that is being formed over it, the dielectric diffusion barrier is formed selectively on the inter-layer dielectric and not on the exposed metal at the bottom of the via. In one example a dielectric SiNC diffusion barrier layer is selectively deposited on the inter-layer dielectric using a remote plasma deposition and a precursor that contains both silicon and nitrogen atoms. Generally, a variety of dielectric diffusion barrier materials with dielectric constants of between about 3.0-20.0 can be selectively formed on inter-layer dielectric.

Abstract translation: 电介质扩散屏障沉积在衬底上，衬底上具有蚀刻到层间电介质的暴露层中的通孔和上覆沟槽，其中在通孔底部存在来自底层互连件的暴露金属。 为了提供从下面的金属化层到在其上形成的金属化层的导电路径，电介质扩散阻挡层选择性地形成在层间电介质上，而不是形成在通孔底部的暴露的金属上。 在一个示例中，电介质SiNC扩散阻挡层使用远程等离子体沉积和包含硅和氮原子的前体选择性沉积在层间电介质上。 通常，介电常数介于约3.0-20.0之间的各种介电扩散阻挡材料可以选择性地形成在层间电介质上。

公开(公告)号：US20150380272A1

公开(公告)日：2015-12-31

申请号：US14320245

申请日：2014-06-30

Applicant: Lam Research Corporation

Inventor： Hui-Jung Wu ,  Thomas Joseph Knisley ,  Nagraj Shankar ,  Meihua Shen ,  John Hoang ,  Prithu Sharma

IPC: H01L21/3213 ,  H01J37/32 ,  C23C16/52 ,  H01L21/768 ,  C23C16/455

CPC classification number: H01L21/32136 ,  C23C16/0245 ,  C23C16/0272 ,  C23C16/045 ,  C23C16/16 ,  C23C16/54 ,  H01J37/32357 ,  H01J2237/332 ,  H01J2237/334 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/32138 ,  H01L21/7682 ,  H01L21/76834 ,  H01L21/76852 ,  H01L21/76885 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and techniques for fabricating metal interconnects, lines, or vias by subtractive etching and liner deposition methods are provided. Methods involve depositing a blanket copper layer, removing regions of the blanket copper layer to form a pattern, treating the patterned metal, depositing a copper-dielectric interface material such that the copper-dielectric interface material adheres only to the patterned copper, depositing a dielectric barrier layer on the substrate, and depositing a dielectric bulk layer on the substrate.

Abstract translation: 提供了通过减法蚀刻和衬垫沉积方法制造金属互连，线或通孔的方法和技术。 方法包括沉积橡皮布铜层，去除橡皮布铜层的区域以形成图案，处理图案化金属，沉积铜 - 电介质界面材料，使得铜 - 电介质界面材料仅附着在图案化的铜上，沉积电介质 阻挡层，并且在基底上沉积介电体层。

公开(公告)号：US12080592B2

公开(公告)日：2024-09-03

申请号：US17250835

申请日：2019-09-10

Applicant: Lam Research Corporation

Inventor： Hui-Jung Wu ,  Bart J. van Schravendijk ,  Mark Naoshi Kawaguchi ,  Gereng Gunawan ,  Jay E. Uglow ,  Nagraj Shankar ,  Gowri Channa Kamarthy ,  Kevin M. McLaughlin ,  Ananda K. Banerji ,  Jialing Yang ,  John Hoang ,  Aaron Lynn Routzahn ,  Nathan Musselwhite ,  Meihua Shen ,  Thorsten Bernd Lill ,  Hao Chi ,  Nicholas Dominic Altieri

IPC: H01L21/336 ,  H01L21/02 ,  H01L21/311 ,  H01L21/768 ,  H01L29/788 ,  H10B41/20 ,  H10B41/35

CPC classification number: H01L21/76846 ,  H01L21/0217 ,  H01L21/02263 ,  H01L21/31105 ,  H01L21/76816 ,  H01L29/7889 ,  H10B41/20 ,  H10B41/35

Abstract: Methods for forming patterned multi-layer stacks including a metal-containing layer are provided herein. Methods involve using silicon-containing non-metal materials in a multi-layer stack including one sacrificial layer to be later removed and replaced with metal while maintaining etch contrast to pattern the multi-layer stack and selectively remove the sacrificial layer prior to depositing metal. Methods involve using silicon oxycarbide in lieu of silicon nitride, and a sacrificial non-metal material in lieu of a metal-containing layer, to fabricate the multi-layer stack, pattern the multi-layer stack, selectively remove the sacrificial non-metal material to leave spaces in the stack, and deposit metal-containing material into the spaces. Sacrificial non-metal materials include silicon nitride and doped polysilicon, such as boron-doped silicon.