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公开(公告)号：US07251117B2
公开(公告)日：2007-07-31
申请号：US10940605
申请日：2004-09-15
IPC分类号： H01G4/228
CPC分类号： H01L28/56 , H01G4/008 , H01G4/1209 , H01G4/33 , H01L27/016 , H01L28/65
摘要： A semiconductor device having the thin film capacitor includes a first electrode formed on a substrate, a capacitor insulating film containing a laminated film, which is constructed by laminating an amorphous dielectric film and a polycrystalline dielectric film via a wave-like interface, on the first electrode, and a second electrode formed on the capacitor insulating film.
摘要翻译： 具有薄膜电容器的半导体器件包括形成在基板上的第一电极，包含叠层膜的电容器绝缘膜，其通过波形界面层压无定形电介质膜和多晶电介质膜，第一 电极和形成在电容器绝缘膜上的第二电极。
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公开(公告)号：US07227736B2
公开(公告)日：2007-06-05
申请号：US11057193
申请日：2005-02-15
CPC分类号： H01L27/0805 , H01L21/76877 , H01L24/11 , H01L28/40 , H01L2224/06102 , H01L2224/1147 , H01L2224/13023 , H01L2224/13099 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01018 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01038 , H01L2924/01039 , H01L2924/0104 , H01L2924/01041 , H01L2924/01044 , H01L2924/01046 , H01L2924/01047 , H01L2924/01056 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/19041 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , Y10T29/43 , Y10T29/435 , Y10T29/49126 , Y10T29/49147 , Y10T29/49155 , Y10T29/49156
摘要： A capacitor device includes a capacitor Q constituted by a lower electrode (12) formed an a substrate (10), a dielectric film (14), and an upper electrode (16); an insulating film (18) covering the capacitor Q; a first contact hole (18a) formed in the insulating film (18) on a connection portion (16a) of the upper electrode (16); an electrode pad (20) for preventing a diffusion of solder, formed in the first contact hole (18a); and a solder bump (22) electrically connected to the electrode pad (20), and the upper electrode (16) has a protrusion portion (16a) protruding from the dielectric film (14), and is connected to the first contact hole (18a) on the protrusion portion (16a).
摘要翻译： 电容器装置包括由形成有基板（10）的下部电极（12），电介质膜（14）和上部电极（16）构成的电容器Q。 覆盖电容器Q的绝缘膜（18）; 形成在上电极（16）的连接部分（16a）上的绝缘膜（18）中的第一接触孔（18a）; 形成在第一接触孔（18a）中的用于防止焊料扩散的电极焊盘（20）; 和与电极焊盘（20）电连接的焊料凸块（22），上部电极（16）具有从电介质膜（14）突出的突出部（16a），并与第一接触孔 18 a）在突出部分（16a）上。
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公开(公告)号：US06853051B2
公开(公告)日：2005-02-08
申请号：US10327651
申请日：2002-12-24
IPC分类号： H01G4/33 , H01L21/02 , H01L21/768 , H01L23/50 , H01L27/01 , H01L27/108 , H01L27/13
CPC分类号： H01L27/016 , H01L21/76804 , H01L21/76895 , H01L23/50 , H01L27/13 , H01L28/40 , H01L28/55 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A thin film capacitor comprising an insulating substrate, a capacitor structure located on the substrate, the capacitor structure having a dielectric layer sandwiched between a lower electrode layer and an upper electrode layer, and conductor members respectively connected to the lower electrode layer and the upper electrode layer, wherein at least the dielectric layer has a side face having a sufficient slope for preventing the short circuit of the upper electrode layer with the lower electrode layer through the conductor member. A method of manufacturing such a thin film capacitor is also disclosed.
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公开(公告)号：US06803617B2
公开(公告)日：2004-10-12
申请号：US10340713
申请日：2003-01-13
IPC分类号： H01G706
CPC分类号： H01L28/55 , H01L27/0805
摘要： The capacitor comprises an lower electrode 22, a dielectric film 30 formed on the lower electrode 22, a floating electrode 20 formed on the dielectric film 30, a dielectric film 50 formed on the floating electrode 40 and having a film orientation different from that of the dielectric film 30, and an upper electrode 80 formed on the dielectric film 50, whereby various characteristics depending on film orientations of the dielectric films can be simultaneously improved.
摘要翻译： 电容器包括下电极22，形成在下电极22上的电介质膜30，形成在电介质膜30上的浮动电极20，形成在浮动电极40上并且具有不同于 电介质膜30和形成在电介质膜50上的上电极80，由此可以同时改善取决于电介质膜的膜取向的各种特性。
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35.发明授权Capacitive element, method of manufacture of the same, and semiconductor device 有权电容元件及其制造方法以及半导体器件公开(公告)号：US08264063B2
公开(公告)日：2012-09-11
申请号：US12222764
申请日：2008-08-15
CPC分类号： H01L28/55 , H01G4/33 , H01L24/73 , H01L27/0805 , H01L28/65 , H01L28/75 , H01L2224/16225 , H01L2224/16265 , H01L2224/32245 , H01L2224/45144 , H01L2224/48247 , H01L2224/73265 , H01L2924/12044 , H01L2924/1515 , H01L2924/15311 , H01L2924/181 , H01L2924/19103 , H01L2924/19104 , H01L2924/30107 , H01L2924/3011 , Y10S257/924 , Y10S438/957 , Y10T29/435 , H01L2924/00012 , H01L2924/00
摘要： A capacitive element is characterized by including: a base (12); a lower barrier layer (13) formed on the base (12); capacitors (Q1 and Q2) made by forming a lower electrode (14a), capacitor dielectric layers (15a), and upper electrodes (16a) in this order on the lower barrier layer (13); and an upper barrier layer (20) covering at least the capacitor dielectric layers (15a) and the lower barrier layer (13).
摘要翻译： 电容元件的特征在于包括：基座（12）; 形成在所述基座（12）上的下阻挡层（13）; 在下阻挡层（13）上依次形成下电极（14a），电容电介质层（15a）和上电极（16a）制成的电容器（Q1和Q2）; 和覆盖至少所述电容器电介质层（15a）和所述下阻挡层（13）的上阻挡层（20）。
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公开(公告)号：US20110073993A1
公开(公告)日：2011-03-31
申请号：US12926733
申请日：2010-12-07
CPC分类号： H01L28/55
摘要： The present invention provides a novel capacitor element, laminated thin-film device, and circuit wherein the capacitance dependency on voltage can be appropriately adjusted, and a technology for manufacturing such a capacitor element and laminated thin-film device. In the capacitor element that comprises a pair of electrode layers and a dielectric layer disposed between the electrode layers, a well region where an ion is implanted is disposed in the dielectric layer, and the C-V curve between the electrode layers is shifted or shifted and expanded in at least one direction of the plus direction and minus direction with respect to the voltage axis.
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公开(公告)号：US07867869B2
公开(公告)日：2011-01-11
申请号：US10458678
申请日：2003-06-11
IPC分类号： H01L21/203
CPC分类号： H01L28/55
摘要： The present invention provides a novel capacitor element, laminated thin-film device, and circuit wherein the capacitance dependency on voltage can be appropriately adjusted, and a technology for manufacturing such a capacitor element and laminated thin-film device. In the capacitor element that comprises a pair of electrode layers and a dielectric layer disposed between the electrode layers, a well region where an ion is implanted is disposed in the dielectric layer, and the C-V curve between the electrode layers is shifted or shifted and expanded in at least one direction of the plus direction and minus direction with respect to the voltage axis.
摘要翻译： 本发明提供了一种新颖的电容器元件，层叠薄膜器件以及可以适当地调节电容对电压的依赖性的电路，以及用于制造这种电容器元件和层叠薄膜器件的技术。 在包括一对电极层和设置在电极层之间的电介质层的电容器元件中，在电介质层中设置注入离子的阱区，电极层之间的CV曲线偏移或偏移 在相对于电压轴的正方向和负方向的至少一个方向上。
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38.发明授权Capacitive element, semiconductor device, and method of manufacturing the capacitive element 有权电容元件，半导体器件以及制造电容元件的方法公开(公告)号：US07491996B2
公开(公告)日：2009-02-17
申请号：US11168547
申请日：2005-06-29
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/016 , H01L21/02164 , H01L21/0217 , H01L21/02178 , H01L21/02197 , H01L21/022 , H01L21/31658 , H01L21/31691 , H01L28/55 , H01L28/65 , H01L2224/16227 , H01L2924/15192 , H01L2924/15312 , H01L2924/19041 , H01L2924/19105 , H01L2924/19106
摘要： A capacitive element includes a base member 10, an underlying insulating film 11 formed on the base member 10, a capacitor Q constructed by forming a lower electrode 13, a capacitor dielectric film 14, and an upper electrode 15 sequentially on the underlying insulating film 11, a lower protection insulating film 16a formed on the upper electrode 15 to cover at least a part of the capacitor Q, and an upper protection insulating film 16b formed on the lower protection insulating film 16a and having a wider energy band gap than the lower protection insulating film 16a.
摘要翻译： 电容性元件包括基底构件10，形成在基底构件10上的下面的绝缘膜11，通过在下面的绝缘膜11上依次形成下部电极13，电容器电介质膜14和上部电极15而构成的电容器Q 形成在上电极15上以覆盖电容器Q的至少一部分的下保护绝缘膜16a和形成在下保护绝缘膜16a上并具有比下保护层更宽的能带隙的上保护绝缘膜16b 绝缘膜16a。
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39.发明授权公开(公告)号：US07405921B2
公开(公告)日：2008-07-29
申请号：US11486001
申请日：2006-07-14
IPC分类号： H01G4/228
CPC分类号： H01G4/33 , H01G4/228 , H01L23/3114 , H01L23/5223 , H01L27/0805 , H01L28/57 , H01L28/65 , H01L2224/05001 , H01L2224/05023 , H01L2224/13022 , H01L2224/131 , H01L2224/16 , H01L2924/00013 , H01L2924/01046 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/19041 , H01L2924/3011 , H01L2924/014 , H01L2224/13099 , H01L2224/05647 , H01L2924/00014 , H01L2224/05655 , H01L2224/05666 , H01L2224/05671 , H01L2224/05166 , H01L2224/05169
摘要： In one aspect of the invention, a thin layer capacitor element has a capacitor with a dielectric layer made of a metal oxide and a protective insulating layer made of a resin material, and a barrier layer made of a non-conductive inorganic material is provided between the capacitor and the protective insulating layer. In another aspect of the invention, a thin layer capacitor element is constituted so that a capacitor structure is covered with at least one protective insulating layer composed of a cured resin, the cured resin being formed from at least one resin precursor selected from the group consisting of thermosetting resins, photosetting resins and thermoplastic resins.
摘要翻译： 在本发明的一个方面，薄层电容器元件具有电容器，其具有由金属氧化物构成的电介质层和由树脂材料制成的保护绝缘层，并且由非导电无机材料制成的阻挡层设置在 电容器和保护绝缘层。 在本发明的另一方面，薄层电容器元件构成为电容器结构覆盖有由固化树脂构成的至少一个保护绝缘层，所述固化树脂由至少一种选自以下的树脂前体形成： 的热固性树脂，光固化树脂和热塑性树脂。
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公开(公告)号：US07365327B2
公开(公告)日：2008-04-29
申请号：US11086909
申请日：2005-03-23
IPC分类号： G01J5/02
CPC分类号： H01L31/101 , G01J1/42 , H01L37/02
摘要： An SiO2 layer (3), a Ti layer (4), a Pt layer (5), a PLZT layer (6) and an IrO2 layer (7) are formed sequentially on an Si substrate (2). The IrO2 layer (7) functioning as a top electrode has a thickness of about 100 nm. Since the IrO2 layer (7) has conductivity lower than that of Pt or the like conventionally used as a top electrode and a skin depth deeper than that of Pt or the like, sufficient sensitivity can be attained by a thickness of about 100 nm.
摘要翻译： SiO 2层（3），Ti层（4），Pt层（5），PLZT层（6）和IrO 2层（7） 顺序地形成在Si衬底（2）上。 用作顶部电极的IrO 2层（7）具有约100nm的厚度。 由于IrO 2层（7）的导电率比常规用作顶部电极的Pt等等的电导率低，而且比Pt等的深度更深，因此可以通过 厚度约100nm。
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