公开(公告)号：US5442585A

公开(公告)日：1995-08-15

申请号：US86879

申请日：1993-07-07

申请人： Kazuhiro Eguchi ,  Katsuaki Natori

发明人： Kazuhiro Eguchi ,  Katsuaki Natori

IPC分类号： G11C11/24 ,  G11C11/404 ,  H01L21/02 ,  H01L21/8242 ,  H01L29/92 ,  H01L29/94 ,  H01L41/22 ,  H01L41/316

CPC分类号： G11C11/24 ,  G11C11/404 ,  H01L28/55 ,  H01L41/081 ,  H01L41/316 ,  H01L27/1085 ,  H01L27/10852 ,  H01L27/10861 ,  H01L29/945 ,  H01L41/1876

摘要： According to the present invention, there is provided a device having dielectric thin film comprising an impurity-containing first electrode having a perovskite-type crystal structure and made of the first dielectric material, a dielectric thin film made of the second dielectric material epitaxially deposited on the surface of the first electrode, and the second electrode provided on the surface of the dielectric thin film.

摘要翻译： 根据本发明，提供了一种具有电介质薄膜的器件，该电介质薄膜包括具有钙钛矿型晶体结构并由第一介电材料制成的含杂质的第一电极，由第二电介质材料制成的电介质薄膜外延沉积在 第一电极的表面和设置在电介质薄膜表面上的第二电极。

公开(公告)号：US5383032A

公开(公告)日：1995-01-17

申请号：US888711

申请日：1992-05-27

申请人： Kazuhiro Eguchi ,  Hiroshi Imabayashi

发明人： Kazuhiro Eguchi ,  Hiroshi Imabayashi

IPC分类号： H04N1/407 ,  H04N1/46

CPC分类号： H04N1/4074

摘要： An image processing system which partitions an input image data into pixel density data representing a density of each of pixels of the input image and stores the pixel density data. The pixel density distribution of the input image is then computed by counting pixels of each density represented by the stored pixel density data. Accumulation data is then generated corresponding to each density represented by the pixel density data, and a data curve is generated and output representing accumulation data. The data curve representing accumulation data corresponding to each density represented by the pixel density data obtained from the input image data is read and used to correct the converted pixel density data by employing the data curve as a density correction curve indicating a relation between the pixel density data and a density data output. Further, the accumulation data corresponding to each density represented by the pixel density data represents a value proportional to the number of pixels having densities ranging from the lowest density to a density corresponding thereto.

摘要翻译： 一种图像处理系统，其将输入图像数据分割成表示输入图像的每个像素的密度的像素密度数据，并存储像素密度数据。 然后通过计算由存储的像素密度数据表示的每个密度的像素来计算输入图像的像素密度分布。 然后对应于由像素密度数据表示的每个密度生成累积数据，并生成表示累积数据的数据曲线并输出。 读取表示与由输入图像数据获得的像素密度数据表示的每个浓度相对应的累积数据的数据曲线，并用于通过使用数据曲线作为浓度校正曲线来校正转换的像素密度数据，该曲线指示像素密度 数据和密度数据输出。 此外，对应于由像素密度数据表示的每个密度的累加数据表示与具有从最低密度到与其对应的密度范围的密度的像素数量成比例的值。

公开(公告)号：US5374996A

公开(公告)日：1994-12-20

申请号：US904931

申请日：1992-06-26

申请人： Kazuhiro Eguchi ,  Kimio Morimoto ,  Yoichi Okoga

发明人： Kazuhiro Eguchi ,  Kimio Morimoto ,  Yoichi Okoga

IPC分类号： G06T7/20 ,  G06F15/62

CPC分类号： G06T7/20

摘要： An image processing system for reading multi-level image data corresponding to each pixel of an input image from a multi-tone-level draft image such as a photograph and correcting a density level at each of the pixels, which is represented by the obtained image data, and outputting data representing corrected density levels. The image processing system first performs an appropriate sampling of the read image data of the pixels at a sampling rate in such a manner to enable reference to the density levels at the pixels when correcting the density levels. The sampling rate is most appropriately predetermined.

摘要翻译： 一种图像处理系统，用于从诸如照片的多色调级草稿图像读取与输入图像的每个像素对应的多级图像数据，并且校正由所获得的图像表示的每个像素处的浓度级别 数据和输出表示校正密度水平的数据。 图像处理系统首先以采样率对像素的读取图像数据进行适当采样，以便在校正密度水平时能够参考像素处的浓度水平。 采样率最合适地预先确定。

公开(公告)号：US5168077A

公开(公告)日：1992-12-01

申请号：US501781

申请日：1990-03-29

申请人： Yasuo Ashizawa ,  Takao Noda ,  Mitsuhiro Kushibe ,  Masahisa Funemizu ,  Kazuhiro Eguchi ,  Yasuo Ohba ,  Yoshihiro Kokubun

发明人： Yasuo Ashizawa ,  Takao Noda ,  Mitsuhiro Kushibe ,  Masahisa Funemizu ,  Kazuhiro Eguchi ,  Yasuo Ohba ,  Yoshihiro Kokubun

IPC分类号： C30B25/02 ,  H01L21/205

CPC分类号： C30B25/02 ,  C30B29/40 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02579 ,  H01L21/0262 ,  Y10S148/057 ,  Y10S148/11

摘要： A p-type GaAs or AlGaAs thin film is formed by a MOCVD method. In the growing step of the thin film, the thin film is doped with a high concentration of carbon atoms forming an acceptor level such that the carrier concentration of the thin film falls within the range of between 1.times.10.sup.18 cm.sup.-3 and 1.times.10.sup.20 cm.sup.-3. At least one of trimethyl gallium and trimethyl aluminum is used as a raw material gaseous compound of III-group element, and arsine is used as a raw material gaseous compound of V-group element. The thin film is formed by an epitaxial growth under the molar ratio V/III of the V-group element supply rate to the III-group element supply rate, which is set at such a small value as 0.3 to 2.5, the temperature of 450 to 700.degree. and the pressure of 1 to 400 Torr. The thin film formed under these conditions exhibits a mirror-like smooth surface, and the film-growth rate is dependent on the supply rate of the V-group element.

公开(公告)号：US5164363A

公开(公告)日：1992-11-17

申请号：US701587

申请日：1991-05-15

申请人： Kazuhiro Eguchi ,  Takatosi Nakanisi ,  Rie Satoh

发明人： Kazuhiro Eguchi ,  Takatosi Nakanisi ,  Rie Satoh

IPC分类号： C23C16/40 ,  C23C16/44 ,  C23C16/455 ,  H01L39/24

CPC分类号： C23C16/45523 ,  C23C16/408 ,  C23C16/45561 ,  H01L39/2441 ,  Y10S505/73 ,  Y10S505/734

摘要： A substrate to be deposited with a superconducting oxide thin film thereon is set a reaction furnace. An organic metal source gas and oxygen-containing gas are alternately introduced into the reactor to pyrolyze, thereby depositing the superconducting oxide thin film containing metal elements of the organic metal at which time an inert gas is used as a carrier gas for the carrier gas.

公开(公告)号：US07242363B2

公开(公告)日：2007-07-10

申请号：US10819259

申请日：2004-04-07

申请人： Munenori Fujimura ,  Shuichiro Yamaguchi ,  Hiromi Tokunaga ,  Kazuhiro Eguchi

发明人： Munenori Fujimura ,  Shuichiro Yamaguchi ,  Hiromi Tokunaga ,  Kazuhiro Eguchi

IPC分类号： H01Q1/36 ,  H01Q21/00

CPC分类号： G06F1/1698 ,  G06F1/1616 ,  G06F1/1626 ,  H01Q1/2258 ,  H01Q1/2266 ,  H01Q1/243 ,  H01Q1/362 ,  H01Q1/40 ,  H01Q3/06 ,  H01Q3/2623 ,  H01Q9/16 ,  H01Q9/28 ,  H01Q9/46 ,  H01Q11/08 ,  H01Q13/10 ,  H01Q21/29

摘要： An antenna element, an antenna module, and an electronic equipment using these, are small-sized, high in transmitting and receiving performance, and capable of transmitting and receiving electric waves at a plurality of frequencies. The antenna element includes two antennas having at least a feeder portion and an open portion, and current is fed to each feeder portion. The antenna module includes at least an antenna and a mounting body in which the antenna is mounted, and current is fed to each feeder portion. The electronic equipment includes at least the antenna element or antenna module, a signal modulator, a signal demodulator, a controller, a man-machine interface, and a casing.

摘要翻译： 使用这些的天线元件，天线模块和电子设备是小型的，高的发送和接收性能，并且能够以多个频率发送和接收电波。 天线元件包括至少具有馈电部分和开放部分的两个天线，并且电流馈送到每个馈送部分。 天线模块至少包括天线和天线安装在其中的安装体，并且电流被馈送到每个馈送部分。 电子设备至少包括天线元件或天线模块，信号调制器，信号解调器，控制器，人机界面和外壳。

公开(公告)号：US07101775B2

公开(公告)日：2006-09-05

申请号：US10911516

申请日：2004-08-05

申请人： Kazuhiro Eguchi ,  Seiji Inumiya ,  Yoshitaka Tsunashima

发明人： Kazuhiro Eguchi ,  Seiji Inumiya ,  Yoshitaka Tsunashima

IPC分类号： H01L21/3205

CPC分类号： H01L29/511 ,  C23C16/30 ,  C23C16/45523 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/28229 ,  H01L21/31604 ,  H01L28/56 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

摘要： A semiconductor device comprising a semiconductor substrate, a gate dielectrics formed on the semiconductor substrate and including a silicon oxide film containing a metallic element, the silicon oxide film containing the metallic element including a first region near a lower surface thereof, a second region near an upper surface thereof, and a third region between the first and second regions, the metallic element contained in the silicon oxide film having a density distribution in a thickness direction of the silicon oxide film, a peak of the density distribution existing in the third region, and an electrode formed on the gate dielectrics.

公开(公告)号：US06844234B2

公开(公告)日：2005-01-18

申请号：US10101913

申请日：2002-03-21

申请人： Kazuhiro Eguchi ,  Seiji Inumiya ,  Yoshitaka Tsunashima

发明人： Kazuhiro Eguchi ,  Seiji Inumiya ,  Yoshitaka Tsunashima

IPC分类号： H01L21/31 ,  C23C16/30 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/28 ,  H01L21/316 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L21/3205

CPC分类号： H01L29/511 ,  C23C16/30 ,  C23C16/45523 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/28229 ,  H01L21/31604 ,  H01L28/56 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

摘要： A semiconductor device comprising a semiconductor substrate, a gate dielectrics formed on the semiconductor substrate and including a silicon oxide film containing a metallic element, the silicon oxide film containing the metallic element including a first region near a lower surface thereof, a second region near an upper surface thereof, and a third region between the first and second regions, the metallic element contained in the silicon oxide film having a density distribution in a thickness direction of the silicon oxide film, a peak of the density distribution existing in the third region, and an electrode formed on the gate dielectrics.

摘要翻译： 一种半导体器件，包括半导体衬底，形成在所述半导体衬底上并包括含有金属元素的氧化硅膜的栅极电介质，所述氧化硅膜含有所述金属元素，所述金属元素包括在其下表面附近的第一区域， 上表面和第一和第二区域之间的第三区域，包含在氧化硅膜中的金属元素在氧化硅膜的厚度方向上具有密度分布，存在于第三区域中的密度分布的峰值， 以及形成在栅极电介质上的电极。

公开(公告)号：US20050006674A1

公开(公告)日：2005-01-13

申请号：US10911516

申请日：2004-08-05

申请人： Kazuhiro Eguchi ,  Seiji Inumiya ,  Yoshitaka Tsunashima

发明人： Kazuhiro Eguchi ,  Seiji Inumiya ,  Yoshitaka Tsunashima

IPC分类号： H01L21/31 ,  C23C16/30 ,  C23C16/44 ,  C23C16/455 ,  H01L21/02 ,  H01L21/28 ,  H01L21/316 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L21/336 ,  H01L29/76 ,  H01L31/062 ,  B05D1/36 ,  B05D7/00

CPC分类号： H01L29/511 ,  C23C16/30 ,  C23C16/45523 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28211 ,  H01L21/28229 ,  H01L21/31604 ,  H01L28/56 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/78

摘要： A semiconductor device comprising a semiconductor substrate, a gate dielectrics formed on the semiconductor substrate and including a silicon oxide film containing a metallic element, the silicon oxide film containing the metallic element including a first region near a lower surface thereof, a second region near an upper surface thereof, and a third region between the first and second regions, the metallic element contained in the silicon oxide film having a density distribution in a thickness direction of the silicon oxide film, a peak of the density distribution existing in the third region, and an electrode formed on the gate dielectrics.

公开(公告)号：US06541813B1

公开(公告)日：2003-04-01

申请号：US09650746

申请日：2000-08-30

申请人： Shoko Niwa ,  Hiroshi Tomita ,  Kazuhiro Eguchi ,  Katsuhiko Hieda

发明人： Shoko Niwa ,  Hiroshi Tomita ,  Kazuhiro Eguchi ,  Katsuhiko Hieda

IPC分类号： H01L2976

CPC分类号： H01L21/31691 ,  H01L28/55

摘要： The capacitor related to the present invention has a lower electrode, a dielectric film provided on the lower electrode and made mainly of crystal containing at Ti, O and at least one element selected from the group consisting of Ba and Sr, and an upper electrode provided on the dielectric film, wherein the dielectric film includes a layer which contacts the upper electrode. In case the dielectric film which has a thickness of at least 5 nm and exhibits a first-order differential spectrum measured by means of Auger electron spectroscopy, and the in the first-order differential spectrum, a ratio A/B is at most 0.3, where A is the absolute value A of a difference between a third peak appearing near 420 eV and a fourth peak appearing at a higher energy level and near the third peak, and B is the absolute value B of a difference between a first peak appearing near 410 eV and a third peak appearing at a lower energy level and near the first level.

摘要翻译： 与本发明有关的电容器具有下电极，在下电极上设置的电介质膜，主要由含有Ti，O的晶体和从Ba和Sr组成的组中选出的至少一种元素制成，上电极 在电介质膜上，其中电介质膜包括与上电极接触的层。 在通过俄歇电子能谱法测量的具有至少5nm的厚度并显示一阶微分光谱的电介质膜和一阶微分光谱中，A / B比至多为0.3时， 其中A是在420eV附近出现的第三峰与出现在较高能级和接近第三峰的第四峰之间的差的绝对值A，B是出现在附近的第一峰之间的差的绝对值B 410 eV和第三个峰出现在较低的能级和接近第一级。