-
公开(公告)号：US09978734B2
公开(公告)日：2018-05-22
申请号：US15114118
申请日：2015-01-26
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Matthias Sabathil , Alexander Linkov , Britta Göötz , Georg Dirscherl
CPC classification number: H01L33/504 , H01L25/167 , H01L25/50 , H01L31/143 , H01L31/173 , H01L33/005 , H01L33/44 , H01L33/508 , H01L33/54 , H01L33/56 , H01L2933/0033 , H01L2933/0041 , H01L2933/005 , H01L2933/0091
Abstract: A light-emitting arrangement includes a radiation-emitting semiconductor chip that, during operation, emits primary radiation at least from a main emission surface, a first conversion element that absorbs part of the primary radiation and emits secondary radiation, and a deflection element that causes a direction change for part of the primary radiation, wherein the first conversion element is arranged in a lateral direction next to the radiation-emitting semiconductor chip, the deflection element guides part of the primary radiation onto the first conversion element, and the light-emitting arrangement, in operation, emits mixed light including the primary radiation and the secondary radiation.
-
公开(公告)号：US20180006196A1
公开(公告)日：2018-01-04
申请号：US15543665
申请日：2015-12-16
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alexander Linkov , Siegfried Herrmann
CPC classification number: H01L33/504 , H01L24/96 , H01L33/508 , H01L33/56 , H01L33/60 , H01L33/62 , H01L2224/04105 , H01L2224/19 , H01L2224/96 , H01L2933/0033 , H01L2933/0041 , H01L2933/005 , H01L2933/0058 , H01L2933/0066
Abstract: An optoelectronic semiconductor component and a method for producing the same are disclosed. In an embodiment the semiconductor component includes a semiconductor chip, which emits electromagnetic radiation of a first wavelength range from a radiation emission surface. The semiconductor component further includes a first conversion layer located on a lateral flank of the semiconductor chip, wherein the first conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of a second wavelength range, and a second conversion layer located on the radiation emission surface of the semiconductor chip, wherein the second conversion layer is suitable for converting electromagnetic radiation of the first wavelength range into electromagnetic radiation of the second or of a third wavelength range. The first conversion layer is different from the second conversion layer.
-
33.发明申请公开(公告)号：US20160351550A1
公开(公告)日：2016-12-01
申请号：US15114118
申请日：2015-01-26
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Matthias Sabathil , Alexander Linkov , Britta Göötz , Georg Dirscherl
IPC: H01L25/16 , H01L31/173 , H01L25/00 , H01L33/50 , H01L33/56
CPC classification number: H01L33/504 , H01L25/167 , H01L25/50 , H01L31/143 , H01L31/173 , H01L33/005 , H01L33/44 , H01L33/508 , H01L33/54 , H01L33/56 , H01L2933/0033 , H01L2933/0041 , H01L2933/005 , H01L2933/0091
Abstract: A light-emitting arrangement includes a radiation-emitting semiconductor chip that, during operation, emits primary radiation at least from a main emission surface, a first conversion element that absorbs part of the primary radiation and emits secondary radiation, and a deflection element that causes a direction change for part of the primary radiation, wherein the first conversion element is arranged in a lateral direction next to the radiation-emitting semiconductor chip, the deflection element guides part of the primary radiation onto the first conversion element, and the light-emitting arrangement, in operation, emits mixed light including the primary radiation and the secondary radiation.
Abstract translation: 发光装置包括发射半导体芯片，其在操作期间至少从主发射表面发射初级辐射，吸收主辐射的一部分并发射次级辐射的第一转换元件以及导致 对于一次辐射的一部分的方向改变，其中第一转换元件沿着与发射辐射的半导体芯片相邻的横向方向布置，偏转元件将主辐射的一部分引导到第一转换元件上，并且发光 在操作中的布置发射包括初级辐射和次级辐射的混合光。
-
34.发明申请公开(公告)号：US20160087177A1
公开(公告)日：2016-03-24
申请号：US14888770
申请日：2014-05-05
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Thomas Schwarz , Frank Singer , Alexander Linkov , Stefan Illek , Wolfgang Mönch
CPC classification number: H01L33/62 , H01L24/24 , H01L25/0753 , H01L33/0095 , H01L33/46 , H01L33/486 , H01L33/54 , H01L33/58 , H01L33/60 , H01L2224/32245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48471 , H01L2224/48479 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/12035 , H01L2924/12041 , H01L2933/0058 , H01L2933/0066 , H01L2924/00 , H01L2224/4554
Abstract: A radiation-emitting semiconductor device includes at least one semiconductor chip having a semiconductor layer sequence having an active region that produces radiation; a mounting surface on which at least one electrical contact for external contacting of the semiconductor chip is formed, wherein the mounting surface runs parallel to a main extension plane of the semiconductor layer sequence; a radiation exit surface running at an angle to or perpendicularly to the mounting surface; a radiation-guiding layer arranged in a beam path between the semiconductor chip and the radiation exit surface; and a reflector body adjacent to the radiation-guiding layer in regions and in a top view of the semiconductor device covers the semiconductor chip.
Abstract translation: 辐射发射半导体器件包括至少一个具有半导体层序列的半导体芯片，该半导体层序列具有产生辐射的有源区; 其上形成有用于半导体芯片外部接触的至少一个电触点的安装表面，其中所述安装表面平行于所述半导体层序列的主延伸平面延伸; 辐射出口表面以与安装表面成角度或垂直于该安装表面延伸; 布置在半导体芯片和辐射出射表面之间的光束路径中的辐射引导层; 并且在半导体器件的区域和顶视图中与辐射引导层相邻的反射器体覆盖半导体芯片。
-
公开(公告)号：US11670742B2
公开(公告)日：2023-06-06
申请号：US16327691
申请日：2017-08-02
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Britta Göötz , Alexander Linkov
CPC classification number: H01L33/504 , F21S41/00 , H01L25/0753 , H01L25/167 , H01L27/156 , H01L33/505 , H01L33/56 , H01L33/08 , H01L33/58 , H01L2933/0041 , H01L2933/0058
Abstract: An optoelectronic semiconductor chip and a method for producing an optoelectronic semiconductor chip are disclosed. In an embodiment an optoelectronic semiconductor chip includes a semiconductor layer sequence having a plurality of pixels, the semiconductor layer sequence comprising an active layer configured to generate electromagnetic radiation of a first wavelength range and a plurality of conversion elements, wherein each conversion element is configured to convert the radiation of the first wavelength range into radiation of a second wavelength range, wherein each pixel has a radiation exit surface and a conversion element is arranged on each radiation exit surface, and wherein each conversion element has a greater thickness in a central region than in a peripheral region.
-
Patent Agency Ranking
公开(公告)号：US11107945B2
公开(公告)日：2021-08-31
申请号：US15820930
申请日：2017-11-22
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Alexander Linkov , Frank Singer , Matthias Bruckschloegl , Siegfried Herrmann , Jürgen Moosburger , Thomas Schwarz
IPC: H01L33/00 , H01L25/075 , H01L33/48 , H01L33/38 , H01L33/62
Abstract: A component includes a light emitting semiconductor chip, wherein the semiconductor chip includes a layer arrangement including a plurality of layers, the p-conducting layer and the n-conducting layer adjoin one another in an active zone, a first electrical contact is configured on the p-conducting side of the layer arrangement at a first side of the semiconductor chip, a second electrical contact is configured on the n-conducting side of the layer arrangement at a second side of the semiconductor chip, the second side being situated opposite the first side of the semiconductor chip, the first side of the semiconductor chip transitions into the second side via an end side, the semiconductor chip is secured by the end side on a substrate, the substrate includes a first and second further electrical contact, and the further electrical contacts electrically conductively connect to the electrical contacts of the semiconductor chip.
-
公开(公告)号：US20200098948A1
公开(公告)日：2020-03-26
申请号：US16604573
申请日：2018-03-29
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Jia Ping Jackson KUA , Tilman Eckert , Alexander Linkov
Abstract: An optoelectronic component may have a semiconductor chip designed to emit electromagnetic radiation. The semiconductor chip may have a radiation exit surface, and a protective layer arranged over the radiation exit surface. The protective layer may include at least one first layer comprising an aluminum oxide and at least one second layer comprising a silicon oxide a silicon oxide, and at least one third layer comprising a titanium oxide. A current spreading layer may include one or more transparent conductive oxides arranged between the radiation exit surface and the protective layer.
-
38.发明申请公开(公告)号：US20180097156A1
公开(公告)日：2018-04-05
申请号：US15560140
申请日：2016-03-18
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Christian Leirer , Alexander Linkov , Matthias Sperl , Matthias Kiessling
CPC classification number: H01L33/58 , H01L33/005 , H01L33/507
Abstract: An optoelectronic lighting device and a method for manufacturing an optoelectronic lighting device are disclosed. In an embodiment the device includes a carrier and a light-emitting diode arranged on the carrier having a light-emitting surface. The device further includes a microlens structure including a plurality of microlenses, wherein the microlens structure is arranged on the light-emitting surface of the diode and a conversion layer arranged on the microlens structure, wherein the light-emitting surface is configured to emit light, wherein the microlens structure images, at least in part, the light, and wherein the conversion layer converts the light.
-
39.发明授权公开(公告)号：US09837591B2
公开(公告)日：2017-12-05
申请号：US14888770
申请日：2014-05-05
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Thomas Schwarz , Frank Singer , Alexander Linkov , Stefan Illek , Wolfgang Mönch
IPC: H01L33/60 , H01L33/58 , H01L33/48 , H01L33/62 , H01L33/54 , H01L33/46 , H01L23/00 , H01L33/00 , H01L25/075
CPC classification number: H01L33/62 , H01L24/24 , H01L25/0753 , H01L33/0095 , H01L33/46 , H01L33/486 , H01L33/54 , H01L33/58 , H01L33/60 , H01L2224/32245 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48471 , H01L2224/48479 , H01L2224/49107 , H01L2224/73265 , H01L2924/00014 , H01L2924/12035 , H01L2924/12041 , H01L2933/0058 , H01L2933/0066 , H01L2924/00 , H01L2224/4554
Abstract: A radiation-emitting semiconductor device includes at least one semiconductor chip having a semiconductor layer sequence having an active region that produces radiation; a mounting surface on which at least one electrical contact for external contacting of the semiconductor chip is formed, wherein the mounting surface runs parallel to a main extension plane of the semiconductor layer sequence; a radiation exit surface running at an angle to or perpendicularly to the mounting surface; a radiation-guiding layer arranged in a beam path between the semiconductor chip and the radiation exit surface; and a reflector body adjacent to the radiation-guiding layer in regions and in a top view of the semiconductor device covers the semiconductor chip.
-
公开(公告)号：US09520442B2
公开(公告)日：2016-12-13
申请号：US14575913
申请日：2014-12-18
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Ralph Wirth , Alexander Linkov
CPC classification number: H01L25/0753 , H01L27/15 , H01L33/30 , H01L33/32 , H01L33/483 , H01L33/50 , H01L33/502 , H01L33/54 , H01L33/56 , H01L33/58 , H01L33/60 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
Abstract: An optoelectronic component can be used for mixing electromagnetic radiation having different wavelengths, in particular in the far field. The optoelectronic component includes a carrier. A first semiconductor chip has a first radiation exit surface for emitting electromagnetic radiation in a first spectral range is provided on the carrier and a second semiconductor chip as a second radiation exit surface for emitting electromagnetic radiation in a second spectral range is provided on the carrier. A diffusing layer is provided on the radiation exit surfaces of the semiconductor chips which face away from the carrier.
-
-
-
-
-
-
-
-
-
Search Results
45
records
(took 0.04 seconds)
