INDUCTIVELY COUPLED RF PLASMA SOURCE WITH MAGNETIC CONFINEMENT AND FARADAY SHIELDING
    31.
    发明申请
    INDUCTIVELY COUPLED RF PLASMA SOURCE WITH MAGNETIC CONFINEMENT AND FARADAY SHIELDING 审中-公开
    感应耦合RF等离子体源与磁性限制和法拉第屏蔽

    公开(公告)号:US20130015053A1

    公开(公告)日:2013-01-17

    申请号:US13181210

    申请日:2011-07-12

    摘要: Disclosed is an inductively coupled RF plasma source that provides both magnetic confinement to reduce plasma losses and Faraday shielding to suppress parasitic capacitive components. The inductively coupled RF plasma system comprises an RF power source, plasma chamber, an array of permanent magnets, and an antenna array. The plasma chamber is comprised of walls and a dielectric window having an inner and outer surface wherein the inner surface forms a wall of the plasma chamber. The array of parallel conductive permanent magnets is electrically interconnected and embedded within the dielectric window walls proximate to the inner surface and coupled to ground on one end. The permanent magnet array elements are alternately magnetized toward and away from plasma in the plasma chamber to form a multi-cusp magnetic field. The antenna array may be comprised of parallel tubes through which an RF current is circulated. The antenna array is oriented perpendicular to the permanent magnet array.

    摘要翻译: 公开了电感耦合RF等离子体源,其提供磁约束以减少等离子体损耗和法拉第屏蔽以抑制寄生电容性部件。 电感耦合RF等离子体系统包括RF电源,等离子体室,永磁体阵列和天线阵列。 等离子体室由壁和具有内表面和外表面的电介质窗构成,其中内表面形成等离子体室的壁。 平行导电永磁体的阵列电互连并且嵌入介于靠近内表面的电介质窗壁内,并在一端接地。 永磁体阵列元件在等离子体室中等离子体交替地被磁化,以形成多尖点磁场。 天线阵列可以由平行管组成,RF电流通过该平行管循环。 天线阵列垂直于永磁体阵列定向。

    SYSTEM AND METHOD FOR PRODUCING A MASS ANALYZED ION BEAM FOR HIGH THROUGHPUT OPERATION
    32.
    发明申请
    SYSTEM AND METHOD FOR PRODUCING A MASS ANALYZED ION BEAM FOR HIGH THROUGHPUT OPERATION 审中-公开
    用于生产用于高通量运行的质量分析离子束的系统和方法

    公开(公告)号:US20130001414A1

    公开(公告)日:2013-01-03

    申请号:US13175404

    申请日:2011-07-01

    IPC分类号: H01J49/10

    摘要: A system for producing a mass analyzed ion beam for implanting into a workpiece, includes an extraction plate having a set of apertures having a longitudinal axis of the aperture. The set of apertures are configured to extract ions from an ion source to form a plurality of beamlets. The system also includes an analyzing magnet region configured to provide a magnetic field to deflect ions in the beamlets in a first direction that is generally perpendicular to the longitudinal axis of the apertures. The system further includes a mass analysis plate having a set of apertures configured to transmit first ion species having a first mass/charge ratio and to block second ion species having a second mass/charge ratio and a workpiece holder configured to move with respect to the mass analysis plate along the first direction.

    摘要翻译: 用于生产用于植入工件的质量分析离子束的系统包括具有一组具有孔的纵向轴线的孔的抽出板。 该组孔被构造成从离子源提取离子以形成多个子束。 该系统还包括分析磁体区域,其被配置为提供磁场以沿着大致垂直于孔的纵向轴线的第一方向偏转子束中的离子。 该系统还包括质量分析板,该质量分析板具有一组孔口,其被配置为透射具有第一质量/带电比的第一离子种类并阻挡具有第二质量/加料比的第二离子种类和被配置为相对于 质量分析板沿第一方向。

    IMPLANT UNIFORMITY CONTROL
    34.
    发明申请
    IMPLANT UNIFORMITY CONTROL 有权
    植入均质控制

    公开(公告)号:US20100084581A1

    公开(公告)日:2010-04-08

    申请号:US12244001

    申请日:2008-10-02

    IPC分类号: H01J37/08

    摘要: An apparatus and method for ion implantation that include destabilizing the ion beam as it passes through magnetic field, preferably a dipole magnetic field is disclosed. By introducing a bias voltage at certain points within the magnetic field, electrons from the plasma are drawn toward the magnet, thereby causing the ion beam to expand due to space charge effects. The bias voltage can be introduced into the magnet in a region where the magnetic field has only one component. Alternatively, the bias voltage can be in a region wherein the magnetic field has two components.

    摘要翻译: 公开了一种用于离子注入的装置和方法,其包括在离子束通过磁场时使其稳定化,优选偶极磁场。 通过在磁场内的某些点引入偏置电压,来自等离子体的电子被吸向磁体,从而由于空间电荷效应而导致离子束膨胀。 可以在磁场仅具有一个分量的区域中将偏置电压引入到磁体中。 或者,偏置电压可以在其中磁场具有两个分量的区域中。

    TECHNIQUES FOR PLASMA INJECTION
    35.
    发明申请
    TECHNIQUES FOR PLASMA INJECTION 有权
    等离子体注射技术

    公开(公告)号:US20090026390A1

    公开(公告)日:2009-01-29

    申请号:US11781700

    申请日:2007-07-23

    IPC分类号: H01J37/08

    摘要: Techniques for plasma injection for space charge neutralization of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a plasma injection system for space charge neutralization of an ion beam. The plasma injection system may comprise a first array of magnets and a second array of magnets positioned along at least a portion of an ion beam path, the first array being on a first side of the ion beam path and the second array being on a second side of the ion beam path, the first side opposing the second side. At least two adjacent magnets in the first array of magnets may have opposite polarity. The plasma injection system may also comprise a plasma source configured to generate a plasma in a region associated with a portion of the ion beam path by colliding at least some electrons with a gas.

    摘要翻译: 公开了用于离子束空间电荷中和的等离子体注入技术。 在一个特定的示例性实施例中,这些技术可以被实现为用于离子束的空间电荷中和的等离子体注入系统。 等离子体注入系统可以包括第一磁体阵列和沿着离子束路径的至少一部分定位的第二磁体阵列,第一阵列位于离子束路径的第一侧上,第二阵列位于第二阵列的第二阵列上 离子束路径的一侧,第一侧与第二侧相对。 第一磁体阵列中的至少两个相邻的磁体可以具有相反的极性。 等离子体注入系统还可以包括等离子体源,其被配置为通过与至少一些电子与气体碰撞而在与一部分离子束路径相关联的区域中产生等离子体。

    Ribbon beam ion implanter cluster tool
    37.
    发明授权
    Ribbon beam ion implanter cluster tool 有权
    丝带束离子注入机群集工具

    公开(公告)号:US07375355B2

    公开(公告)日:2008-05-20

    申请号:US11432977

    申请日:2006-05-12

    IPC分类号: H01J37/317

    摘要: An ion implantation cluster tool for implanting ions into a workpiece is provided, wherein a plurality of beamline assemblies having a respective plurality of ion beamlines associated therewith are positioned about a common process chamber. Each of the plurality of ion beamline assemblies are selectively isolated from the common process chamber, and the plurality of beamline intersect at a processing region of the process chamber. A scanning apparatus positioned within the common process chamber is operable to selectively translate a workpiece holder in one or more directions through each of the plurality of ion beamlines within the processing region, and a common dosimetry apparatus within the common process chamber is operable to measure one or more properties of each of the plurality of ion beamlines. A load lock chamber is operably coupled to the common process chamber for exchange of workpieces between the common process chamber and an external environment.

    摘要翻译: 提供了用于将离子注入到工件中的离子注入簇工具,其中具有与其相关联的多个离子束线的多个束线组件围绕公共处理室定位。 多个离子束线组件中的每一个与公共处理室选择性地隔离,并且多个束线在处理室的处理区域相交。 定位在公共处理室内的扫描设备可操作以选择性地将工件保持器在一个或多个方向上通过处理区域内的多个离子束线中的每一个,并且公共处理室内的常见剂量测量装置可操作以测量一个 或更多的多个离子束线中的每一个的性质。 负载锁定室可操作地联接到公共处理室,用于在公共处理室和外部环境之间交换工件。

    In-situ monitoring on an ion implanter
    38.
    发明授权
    In-situ monitoring on an ion implanter 有权
    离子注入机的原位监测

    公开(公告)号:US07078712B2

    公开(公告)日:2006-07-18

    申请号:US10803439

    申请日:2004-03-18

    摘要: The present invention is directed to in-situ detection of particles and other such features in an ion implantation system during implantation operations to avoid such additional monitoring tool steps otherwise expended before and/or after implantation, for example. One or more such systems are revealed for detecting scattered light from particles on one or more semiconductor wafers illuminated by a light source (e.g., laser beam). The system comprises an ion implanter having a laser for illumination of a spot on the wafer and a pair of detectors (e.g., PMT or photodiode) rotationally opposite from the ion implantation operations. A wafer transport holds a wafer or wafers for translational scanning under the fixed laser spot. A computer analyzes the intensity of the scattered light detected from the illuminated wafer (workpiece), and may also map the light detected to a unique position. For example, particles or other such contaminates may be identified on wafers during the implantation process before additional time and resources are consumed, and aid in determining the sources of such contaminates. Further, threshold analysis of the quantity or size of such particles, for example, may provide a system interlock for shutdown or feedback control.

    摘要翻译: 本发明涉及在植入操作期间在离子注入系统中的颗粒和其它这些特征的原位检测,以避免例如植入之前和/或之后另外消耗的另外的监测工具步骤。 一个或多个这样的系统被揭示用于检测由光源(例如激光束)照射的一个或多个半导体晶片上的颗粒的散射光。 该系统包括具有用于照射晶片上的点的激光器和与离子注入操作旋转相反的一对检测器(例如,PMT或光电二极管)的离子注入机。 晶片传输器在固定的激光光斑下保持用于平移扫描的晶片或晶片。 计算机分析从照射的晶片(工件)检测到的散射光的强度,并且还可以将检测到的光映射到唯一的位置。 例如,在额外的时间和资源被消耗之前,可以在植入过程期间在晶片上识别颗粒或其它这样的污染物,并且有助于确定这些污染物的来源。 此外,例如,这种颗粒的数量或尺寸的阈值分析可以提供用于关闭或反馈控制的系统互锁。

    Thin magnetron structures for plasma generation in ion implantation systems
    39.
    发明授权
    Thin magnetron structures for plasma generation in ion implantation systems 失效
    用于离子注入系统中等离子体生成的薄磁控管结构

    公开(公告)号:US06879109B2

    公开(公告)日:2005-04-12

    申请号:US10600775

    申请日:2003-06-20

    IPC分类号: H01J37/317 H05H1/24

    摘要: A plasma generator for space charge neutralization of an ion beam is disclosed and resides within an ion implantation system operable to generate an ion beam and direct the ion beam along a beamline path. The plasma generator comprises an electric field generation system operable to generate an electric field in a portion of the beamline path, and a magnetic field generation system operable to generate a magnetic field in the portion of the beamline path, wherein the magnetic field is perpendicular to the electric field. The plasma generator further comprises a gas source operable to introduce a gas in a region occupied by the electric field and the magnetic field. Electrons in the region move in the region due to the electric field and the magnetic field, respectively, and at least some of the electrons collide with the gas in the region to ionize a portion of the gas, thereby generating a plasma in the region.

    摘要翻译: 公开了一种用于离子束的空间电荷中和的等离子体发生器,并且位于离子注入系统内,可操作以产生离子束并沿着束线路径引导离子束。 等离子体发生器包括可操作以在束线路径的一部分中产生电场的电场产生系统,以及可操作以在束线路径的该部分中产生磁场的磁场产生系统,其中磁场垂直于 电场。 等离子体发生器还包括可操作以在由电场和磁场占据的区域中引入气体的气体源。 该区域中的电子分别由于电场和磁场而在该区域内移动,并且至少一些电子与该区域中的气体碰撞以使一部分气体离子化,从而在该区域中产生等离子体。