摘要:
Disclosed is an inductively coupled RF plasma source that provides both magnetic confinement to reduce plasma losses and Faraday shielding to suppress parasitic capacitive components. The inductively coupled RF plasma system comprises an RF power source, plasma chamber, an array of permanent magnets, and an antenna array. The plasma chamber is comprised of walls and a dielectric window having an inner and outer surface wherein the inner surface forms a wall of the plasma chamber. The array of parallel conductive permanent magnets is electrically interconnected and embedded within the dielectric window walls proximate to the inner surface and coupled to ground on one end. The permanent magnet array elements are alternately magnetized toward and away from plasma in the plasma chamber to form a multi-cusp magnetic field. The antenna array may be comprised of parallel tubes through which an RF current is circulated. The antenna array is oriented perpendicular to the permanent magnet array.
摘要:
A system for producing a mass analyzed ion beam for implanting into a workpiece, includes an extraction plate having a set of apertures having a longitudinal axis of the aperture. The set of apertures are configured to extract ions from an ion source to form a plurality of beamlets. The system also includes an analyzing magnet region configured to provide a magnetic field to deflect ions in the beamlets in a first direction that is generally perpendicular to the longitudinal axis of the apertures. The system further includes a mass analysis plate having a set of apertures configured to transmit first ion species having a first mass/charge ratio and to block second ion species having a second mass/charge ratio and a workpiece holder configured to move with respect to the mass analysis plate along the first direction.
摘要:
Techniques for providing a multimode ion source are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation, the apparatus including an ion source having a hot cathode and a high frequency plasma generator, wherein the ion source has multiple modes of operation.
摘要:
An apparatus and method for ion implantation that include destabilizing the ion beam as it passes through magnetic field, preferably a dipole magnetic field is disclosed. By introducing a bias voltage at certain points within the magnetic field, electrons from the plasma are drawn toward the magnet, thereby causing the ion beam to expand due to space charge effects. The bias voltage can be introduced into the magnet in a region where the magnetic field has only one component. Alternatively, the bias voltage can be in a region wherein the magnetic field has two components.
摘要:
Techniques for plasma injection for space charge neutralization of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a plasma injection system for space charge neutralization of an ion beam. The plasma injection system may comprise a first array of magnets and a second array of magnets positioned along at least a portion of an ion beam path, the first array being on a first side of the ion beam path and the second array being on a second side of the ion beam path, the first side opposing the second side. At least two adjacent magnets in the first array of magnets may have opposite polarity. The plasma injection system may also comprise a plasma source configured to generate a plasma in a region associated with a portion of the ion beam path by colliding at least some electrons with a gas.
摘要:
This disclosure describes an ion implanter having a collimator magnet that is configured to shape an ion beam. A first deceleration stage is configured to manipulate energy of the ion beam shaped by the collimator magnet. A neutral filter magnet is configured to filter neutral atoms from the ion beam passing through the first deceleration stage.
摘要:
An ion implantation cluster tool for implanting ions into a workpiece is provided, wherein a plurality of beamline assemblies having a respective plurality of ion beamlines associated therewith are positioned about a common process chamber. Each of the plurality of ion beamline assemblies are selectively isolated from the common process chamber, and the plurality of beamline intersect at a processing region of the process chamber. A scanning apparatus positioned within the common process chamber is operable to selectively translate a workpiece holder in one or more directions through each of the plurality of ion beamlines within the processing region, and a common dosimetry apparatus within the common process chamber is operable to measure one or more properties of each of the plurality of ion beamlines. A load lock chamber is operably coupled to the common process chamber for exchange of workpieces between the common process chamber and an external environment.
摘要:
The present invention is directed to in-situ detection of particles and other such features in an ion implantation system during implantation operations to avoid such additional monitoring tool steps otherwise expended before and/or after implantation, for example. One or more such systems are revealed for detecting scattered light from particles on one or more semiconductor wafers illuminated by a light source (e.g., laser beam). The system comprises an ion implanter having a laser for illumination of a spot on the wafer and a pair of detectors (e.g., PMT or photodiode) rotationally opposite from the ion implantation operations. A wafer transport holds a wafer or wafers for translational scanning under the fixed laser spot. A computer analyzes the intensity of the scattered light detected from the illuminated wafer (workpiece), and may also map the light detected to a unique position. For example, particles or other such contaminates may be identified on wafers during the implantation process before additional time and resources are consumed, and aid in determining the sources of such contaminates. Further, threshold analysis of the quantity or size of such particles, for example, may provide a system interlock for shutdown or feedback control.
摘要:
A plasma generator for space charge neutralization of an ion beam is disclosed and resides within an ion implantation system operable to generate an ion beam and direct the ion beam along a beamline path. The plasma generator comprises an electric field generation system operable to generate an electric field in a portion of the beamline path, and a magnetic field generation system operable to generate a magnetic field in the portion of the beamline path, wherein the magnetic field is perpendicular to the electric field. The plasma generator further comprises a gas source operable to introduce a gas in a region occupied by the electric field and the magnetic field. Electrons in the region move in the region due to the electric field and the magnetic field, respectively, and at least some of the electrons collide with the gas in the region to ionize a portion of the gas, thereby generating a plasma in the region.
摘要:
An ion source is disclosed having an elongated slit for providing a ribbon ion beam for use in an ion implantation system. The source comprises a coaxial inductive coupling antenna for RF excitation of plasma within a cylindrical source housing, as well as circumferential magnets disposed within the housing for generating azimuthal multi-cusped magnetic fields for plasma confinement. Also disclosed is a liner for the housing interior providing thermal barrier between the plasma and the outer housing wall so as to mitigate or reduce condensation within the plasma confinement chamber.