公开(公告)号：US6087725A

公开(公告)日：2000-07-11

申请号：US161498

申请日：1998-09-28

申请人： Shigeo Yoshii ,  Yoichi Sasai ,  Satoshi Kamiyama ,  Tohru Saitoh ,  Takashi Nishikawa ,  Ryoko Miyanaga

发明人： Shigeo Yoshii ,  Yoichi Sasai ,  Satoshi Kamiyama ,  Tohru Saitoh ,  Takashi Nishikawa ,  Ryoko Miyanaga

IPC分类号： H01L33/28 ,  H01L33/40 ,  H01L33/00

CPC分类号： H01L33/40 ,  H01L33/28

摘要： On a substrate of n-type GaAs, an n-type cladding layer of n-type Zn.sub.0.9 Mg.sub.0.1 S.sub.0.13 Se.sub.0.87, an n-type light guiding layer of n-type ZnS.sub.0.06 Se.sub.0.94, an active layer of ZnCdSe and a p-type light guiding layer of p-type ZnS.sub.0.06 Se.sub.0.94 are successively formed. On the p-type light guiding layer, a p-type contact structure is formed. The p-type contact structure includes a first layer of p-type ZnS.sub.0.31 Se.sub.0.54 Te.sub.0.15, a second layer of ZnS.sub.0.47 Se.sub.0.28 Te.sub.0.25, a third layer of p-type ZnS.sub.0.65 Te.sub.0.35, a fourth layer of p-type ZnS.sub.0.5 Te.sub.0.5 and a fifth layer of p-type ZnTe.

摘要翻译： 在n型GaAs的衬底上，n型Zn0.9Mg0.1S0.13Se0.87的n型覆层，n型ZnS0.06Se0.94的n型导光层，n型ZnS0.06Se0.94的有源层 ZnCdSe和p型ZnS0.06Se0.94的p型导光层依次形成。 在p型导光层上形成p型接触结构。 p型接触结构包括第一层p型ZnS0.31Se0.54Te0.15，第二层ZnS0.47Se0.28Te0.25，第三层p型ZnS0.65Te0.35，第四层 的p型ZnS0.5Te0.5和第五层p型ZnTe。

公开(公告)号：US6072762A

公开(公告)日：2000-06-06

申请号：US289984

申请日：1999-04-13

申请人： Masahiro Kume ,  Yuzaburo Ban ,  Isao Kidoguchi ,  Satoshi Kamiyama ,  Ayumu Tsujimura ,  Akihiko Ishibashi ,  Yoshiaki Hasegawa ,  Ryoko Miyanaga

发明人： Masahiro Kume ,  Yuzaburo Ban ,  Isao Kidoguchi ,  Satoshi Kamiyama ,  Ayumu Tsujimura ,  Akihiko Ishibashi ,  Yoshiaki Hasegawa ,  Ryoko Miyanaga

IPC分类号： G11B7/005 ,  G11B7/125 ,  G11B7/135 ,  G11B11/105

CPC分类号： G11B7/126 ,  G11B11/10515 ,  G11B11/10543 ,  G11B7/005 ,  G11B7/128 ,  G11B7/1369 ,  G11B7/135

摘要： Between a semiconductor laser diode and an optical disk, a collimator lens for collimating a laser beam output from the semiconductor laser diode, a liquid crystal optical shutter for attenuating the collimated beam having passed through the collimator lens, and a beam splitter for splitting reflected light from the optical disk are disposed. In addition, a collective lens for collecting the collimated beam obtained by the collimator lens on a data holding surface of the optical disk is further disposed.

摘要翻译： 在半导体激光二极管和光盘之间，用于准直半导体激光二极管输出的激光束的准直透镜，用于衰减通过准直透镜的准直光束的液晶光学快门，以及用于分离反射光的分束器 从光盘配置。 此外，还设置有用于收集由准直透镜获得的准直光束在光盘的数据保持表面上的集体透镜。

公开(公告)号：US5705831A

公开(公告)日：1998-01-06

申请号：US415540

申请日：1995-04-03

申请人： Nobuyuki Uemura ,  Minoru Kubo ,  Yoichi Sasai ,  Kazuhiro Ohkawa ,  Satoshi Kamiyama ,  Takeshi Uenoyama

发明人： Nobuyuki Uemura ,  Minoru Kubo ,  Yoichi Sasai ,  Kazuhiro Ohkawa ,  Satoshi Kamiyama ,  Takeshi Uenoyama

IPC分类号： H01L33/00 ,  H01L33/06 ,  H01L33/28 ,  H01L29/22 ,  H01L31/0256 ,  H01L31/0296

CPC分类号： H01L33/28 ,  B82Y20/00 ,  H01L33/0087 ,  H01L33/06

摘要： According to one aspect of the invention, a crystal-growing method for forming a II-VI single crystalline semiconductor expressed by Zn.sub.1-x Cd.sub.x Se (where 0

摘要翻译： 根据本发明的一个方面，提供了由Zn1-xCdxSe（其中0

公开(公告)号：US5438012A

公开(公告)日：1995-08-01

申请号：US102634

申请日：1993-08-05

申请人： Satoshi Kamiyama

发明人： Satoshi Kamiyama

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L21/70

CPC分类号： H01L28/40

摘要： A capacitor element of a semiconductor device used for a super-LSI is formed by the steps including (a) removing a natural oxide film on a surface of a lower electrode of polysilicon, (b) forming on the surface of the lower electrode an impurity-doped tantalum oxide film, and (c) forming an upper electrode with at least a bottom thereof constituted by titanium nitride. The steps may further include (d) nitriding the surface of the lower electrode after the removal of the natural oxide film, and (e) densifying the tantalum oxide film by way of a high temperature heat treatment after the formation of the tantalum oxide film. In this way, it is possible to reduce thickness of a capacitive insulating film and to form the capacitor element in which the leakage current characteristics are improved.

摘要翻译： 用于超级LSI的半导体器件的电容器元件通过以下步骤形成，所述步骤包括：（a）在多晶硅的下电极的表面上去除自然氧化物膜，（b）在下电极的表面上形成杂质 掺杂的氧化钽膜，（c）至少形成由氮化钛构成的底部的上部电极。 这些步骤还可以包括（d）在去除天然氧化物膜之后氮化下电极的表面，和（e）在氧化钽膜形成之后通过高温热处理使氧化钽膜致密化。 以这种方式，可以减小电容绝缘膜的厚度并形成其中泄漏电流特性得到改善的电容器元件。

公开(公告)号：US5352623A

公开(公告)日：1994-10-04

申请号：US196486

申请日：1994-02-15

申请人： Satoshi Kamiyama

发明人： Satoshi Kamiyama

IPC分类号： H01L27/04 ,  H01L21/02 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L21/70

CPC分类号： H01L27/10852 ,  H01L28/40

摘要： A method for manufacturing a semiconductor device, wherein a thin film of tantalum oxide is formed as a dielectric film in a capacitor element, increases capacitance per unit area and reduces a leakage current in the capacitor element of DRAM memory cells. The method includes steps of forming a polysilicon film constituting a lower electrode of the capacitor element, removing a natural oxide film from the surface of the polysilicon film, nitriding the surface of the polysilicon by rapid thermal nitriding (RTN) using lamp-annealing, forming a tantalum oxide film, densifying and nitriding consecutively the tantalum oxide film, and forming an upper capacitor electrode thereon. The capacitor element formed by the method has a large capacitance per unit area Cs=13.8 fF/.mu.m.sup.2.

摘要翻译： 一种用于制造半导体器件的方法，其中在电容器元件中形成氧化钽薄膜作为电介质膜，增加了每单位面积的电容，并降低了DRAM存储单元的电容器元件中的漏电流。 该方法包括以下步骤：形成构成电容器元件的下电极的多晶硅膜，从多晶硅膜的表面去除自然氧化膜，通过使用灯退火的快速热氮化（RTN）对多晶硅的表面进行氮化，形成 氧化钽膜，连续致密化氮化钽膜，在其上形成上层电容电极。 由该方法形成的电容器元件具有单位面积Cs = 13.8fF / m 2的大电容。

公开(公告)号：US5323405A

公开(公告)日：1994-06-21

申请号：US953359

申请日：1992-09-30

申请人： Satoshi Kamiyama ,  Kiyoshi Ohnaka

发明人： Satoshi Kamiyama ,  Kiyoshi Ohnaka

IPC分类号： H01L27/15 ,  H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/40 ,  H01S3/082 ,  H01S3/098 ,  H01S3/25

CPC分类号： H01S5/4031 ,  H01S5/2059

摘要： A phase-locked laser array comprising a plurality of element regions for passing electric current into an active layer; and inter-element regions formed between the element regions. Each of the inter-element regions is so formed as to have two regions, i.e. a non-diffusion region at the center thereof and a diffusion regions disposed on both sides thereof, thereby rendering the refractive index in the non-diffusion region higher than that in the diffusion regions. The method of manufacturing the phase-locked laser array which is characterized by including a step growing an optical waveguide layer of superlattice on a portion of a second clad layer while diffusing impurities doped in the second clad layer into said optical waveguide layer, thereby forming a diffusion regions on both sides of the inter-element region.

摘要翻译： 一种锁相激光器阵列，包括用于将电流传递到有源层中的多个元件区域; 以及形成在元件区域之间的元件间区域。 每个元件间区域被形成为具有两个区域，即其中心处的非扩散区域和设置在其两侧的扩散区域，从而使非扩散区域中的折射率高于不扩散区域的折射率 在扩散区域。 制造锁相激光器阵列的方法，其特征在于包括在第二包覆层的一部分上生长超晶格的光波导层的步骤，同时将掺杂在第二包层中的杂质扩散到所述光波导层中，从而形成 扩散区域在元件间区域的两侧。

公开(公告)号：US5082162A

公开(公告)日：1992-01-21

申请号：US650695

申请日：1991-02-05

申请人： Satoshi Kamiyama ,  Kiyoshi Ohnaka

发明人： Satoshi Kamiyama ,  Kiyoshi Ohnaka

IPC分类号： H01L23/373 ,  B23K35/02 ,  B23K35/26 ,  H01S3/04 ,  H01S5/00 ,  H01S5/024

CPC分类号： B23K35/0238 ,  B23K35/26

摘要： This invention presents a new soldering material comprising an indium layer formed on EFTE film for solder-mounting a semiconductor device onto a metal heat sink. This indium layer can be easily transferred onto the heat sink by pressure applied by a tool, without the aid of ultrasonic energy. This produces a highly immaculate surface of the indium layer transferred onto the heat sink, and achieves stable soldering strength of the soldered semiconductor device. This invention also offers a multi-layered soldering material comprising a thin layer of metal of which the melting point is higher than the soldering temperature, and two indium layers sandwiching said metal layer, formed on an EFTE film. This multi-layered soldering material can be easily transferred onto a metal heat sink by a pressure applying tool without the aid of ultrasonic energy resulting in the stable soldering of a semiconductor device even if it has surface irregularities, without causing an electrical leakage or short circuit.

摘要翻译： 本发明提供了一种新的焊接材料，其包括在EFTE膜上形成的铟层，用于将半导体器件焊接到金属散热器上。 该铟层可以通过工具施加的压力容易地转移到散热器上，而无需超声波能量。 这产生了转移到散热器上的铟层的非常完美的表面，并且实现了焊接半导体器件的稳定的焊接强度。 本发明还提供了一种多层焊料，其包含熔点高于焊接温度的金属薄层，以及夹在所述金属层上的两个铟层，形成在EFTE膜上。 这种多层焊接材料可以通过压力施加工具容易地转移到金属散热器上，而无需超声波能量，导致半导体器件的稳定焊接，即使其具有表面凹凸，也不会导致漏电或短路 。

公开(公告)号：US09629611B2

公开(公告)日：2017-04-25

申请号：US13993029

申请日：2012-02-03

申请人： Wataru Kameishi ,  Hiroyuki Shibanuma ,  Satoshi Kamiyama ,  Shuta Fujiwara ,  Gen Nagano ,  Takayuki Shiina

发明人： Wataru Kameishi ,  Hiroyuki Shibanuma ,  Satoshi Kamiyama ,  Shuta Fujiwara ,  Gen Nagano ,  Takayuki Shiina

IPC分类号： A61B8/14 ,  A61B8/08 ,  G10K11/34 ,  G01S15/89 ,  G01S7/52

CPC分类号： A61B8/488 ,  G01S7/5203 ,  G01S7/52047 ,  G01S15/8913 ,  G01S15/8915 ,  G01S15/8979 ,  G10K11/346

摘要： Saturation of received signals and generation of artifacts that are associated with tap concentration are prevented from occurring even if the differences in the delay amount between each of transducers are small. The ultrasound diagnosis apparatus comprises a plurality of ultrasound transducers, a plurality of taps, a delay amount calculator, a channel distributor, and a delay processor. The delay amount calculator calculates a first delay amount. The channel distributor specifies the minimum delay amount and the maximum delay amount from the first delay amount. Further, the channel distributor divides the range from the minimum delay amount to the maximum delay amount by the number of taps, and relates each to a tap. The channel distributor also inputs a signal output from an ultrasound transducer to the tap related to the divided range including the corresponding first delay amount. The delay processor relates the tap to a previously set second delay amount, and conducts delay processing on the signal input in each of the taps based on the related second delay amount.

公开(公告)号：US06607979B1

公开(公告)日：2003-08-19

申请号：US09670400

申请日：2000-09-27

申请人： Satoshi Kamiyama

发明人： Satoshi Kamiyama

IPC分类号： H01L2144

CPC分类号： H01L29/4941 ,  H01L21/28044 ,  H01L21/28556

摘要： A semiconductor device of the present invention includes a conductive film made up of a polysilicon film, a barrier metal film and a high melting point, metal nitride film sequentially laminated in this order. The conductive film is annealed to lower the resistance of the metal nitride film. Annealing causes the metal nitride film, which is formed in an amorphous state, to release nitrogen and increases the crystal size of metal having a high melting point. This successfully improves the crystallization of the high melting point metal and lowers the resistance of the metal nitride film without regard to the crystallization of the underlying barrier metal film. It is therefore possible to improve the crystallization of the metal nitride film or to obviate the step of providing the barrier metal film with a double-layer structure, i.e., to simplify the production procedure. A method of producing the semiconductor device is also disclosed.

摘要翻译： 本发明的半导体器件包括依次层叠多晶硅膜，阻挡金属膜和高熔点金属氮化物膜的导电膜。 对导电膜进行退火以降低金属氮化物膜的电阻。 退火使得形成为非晶态的金属氮化物膜释放氮气并增加具有高熔点的金属的晶体尺寸。 这成功地改善了高熔点金属的结晶，并且降低了金属氮化物膜的电阻，而不考虑下面的阻挡金属膜的结晶。 因此，可以改善金属氮化物膜的结晶，或者避免提供具有双层结构的阻挡金属膜的步骤，即简化制造过程。 还公开了一种制造半导体器件的方法。

公开(公告)号：US06326638B1

公开(公告)日：2001-12-04

申请号：US09080121

申请日：1998-05-15

申请人： Satoshi Kamiyama ,  Masakatsu Suzuki ,  Takeshi Uenoyama ,  Kiyoshi Ohnaka ,  Akira Takamori ,  Masaya Mannoh ,  Isao Kidoguchi ,  Hideto Adachi ,  Akihiko Ishibashi ,  Toshiya Fukuhisa ,  Yasuhito Kumabuchi

发明人： Satoshi Kamiyama ,  Masakatsu Suzuki ,  Takeshi Uenoyama ,  Kiyoshi Ohnaka ,  Akira Takamori ,  Masaya Mannoh ,  Isao Kidoguchi ,  Hideto Adachi ,  Akihiko Ishibashi ,  Toshiya Fukuhisa ,  Yasuhito Kumabuchi

IPC分类号： H01L2715

CPC分类号： B82Y20/00 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0207 ,  H01S5/0213 ,  H01S5/02272 ,  H01S5/2068 ,  H01S5/2201 ,  H01S5/2232 ,  H01S5/2237 ,  H01S5/24 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/3203 ,  H01S5/32308 ,  H01S5/32341 ,  H01S5/3403 ,  H01S5/34333 ,  H01S2301/173 ,  H01S2304/04 ,  H01S2304/12 ,  Y10S257/918 ,  Y10T428/12528

摘要： The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.

摘要翻译： 本发明的半导体激光器包括在c轴方向上形成的有源层，其中有源层由六方晶系化合物半导体制成，并且在有源层的c平面内产生各向异性应变。