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    FLEXIBLE WAFER LEVELING DESIGN FOR VARIOUS ORIENTATION OF LINE/TRENCH
    31.
    发明申请
    FLEXIBLE WAFER LEVELING DESIGN FOR VARIOUS ORIENTATION OF LINE/TRENCH 有权
    灵活的水平设计，适用于各种方向的线/ TRENCH

    公开(公告)号：US20140362359A1

    公开(公告)日：2014-12-11

    申请号：US13913584

    申请日：2013-06-10

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Kuo-Hung Chao ,  Heng-Hsin Liu ,  Jui-Chun Peng

    IPC: G03F7/20 ,  G01B11/06

    CPC classification number: G01B11/0608 ,  G03F9/7026 ,  G03F9/7034

    Abstract: The present disclosure relates to a photolithography system having an ambulatory projection and/or detection gratings that provide for high quality height measurements without the use of an air gauge. In some embodiments, the photolithography system has a level sensor having a projection source that generates a measurement beam that is provided to a semiconductor substrate via a projection grating. A detector is positioned to receive a measurement beam reflected from the semiconductor substrate via a detection grating. An ambulatory element selectively varies an orientation of the projection grating and/or the detection grating to improve the measurement of the level sensor. By selectively varying an orientation of the projection and/or detection gratings, erroneous measurements of the level sensor can be eliminated.

    Abstract translation: 本公开涉及一种具有移动式投影和/或检测光栅的光刻系统，其提供高质量的高度测量而不使用空气计。 在一些实施例中，光刻系统具有液位传感器，该液位传感器具有产生经由投影光栅提供给半导体基板的测量光束的投影源。 检测器被定位成经由检测光栅接收从半导体衬底反射的测量光束。 移动元件选择性地改变投影光栅和/或检测光栅的取向以改进液位传感器的测量。 通过选择性地改变投影和/或检测光栅的取向，可以消除液位传感器的错误测量。

    Lithography contamination control
    34.
    发明授权
    Lithography contamination control 有权

    公开(公告)号：US12055867B2

    公开(公告)日：2024-08-06

    申请号：US18311795

    申请日：2023-05-03

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Chieh Hsieh ,  Tai-Yu Chen ,  Cho-Ying Lin ,  Heng-Hsin Liu ,  Li-Jui Chen ,  Shang-Chieh Chien

    IPC: G03F7/00 ,  G02B17/06 ,  H05G2/00

    CPC classification number: G03F7/70925 ,  G02B17/0663 ,  G03F7/70033 ,  G03F7/70491 ,  G03F7/70808 ,  G03F7/70916 ,  H05G2/008

    Abstract: A lithography system is provided capable of deterring contaminants, such as tin debris from entering into the scanner. The lithography system in accordance with various embodiments of the present disclosure includes a processor, an extreme ultraviolet light source, a scanner, and a hollow connection member. The light source includes a droplet generator for generating a droplet, a collector for reflecting extreme ultraviolet light into an intermediate focus point, and a light generator for generating pre-pulse light and main pulse light. The droplet generates the extreme ultraviolet light in response to the droplet being illuminated with the pre-pulse light and the main pulse light. The scanner includes a wafer stage. The hollow connection member includes an inlet that is in fluid communication with an exhaust pump. The hollow connection member provides a hollow space in which the intermediate focus point is disposed. The hollow connection member is disposed between the extreme ultraviolet light source and the scanner.

    Exposure method and exposure apparatus
    37.
    发明授权
    Exposure method and exposure apparatus 有权

    公开(公告)号：US11500299B2

    公开(公告)日：2022-11-15

    申请号：US16994804

    申请日：2020-08-17

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Yung-Yao Lee ,  Heng-Hsin Liu ,  Hung-Ming Kuo ,  Jui-Chun Peng

    IPC: G03F9/00 ,  G03F7/20 ,  H01L21/67 ,  H01L21/027 ,  H01L21/66

    Abstract: In a method executed in an exposure apparatus, a focus control effective region and a focus control exclusion region are set based on an exposure map and a chip area layout within an exposure area. Focus-leveling data are measured over a wafer. A photo resist layer on the wafer is exposed with an exposure light. When a chip area of a plurality of chip areas of the exposure area is located within an effective region of a wafer, the chip area is included in the focus control effective region, and when a part of or all of a chip area of the plurality of chip areas is located on or outside a periphery of the effective region of the wafer, the chip area is included in the focus control exclusion region In the exposing, a focus-leveling is controlled by using the focus-leveling data measured at the focus control effective region.

    Overlay metrology method and overlay control method and system
    40.
    发明授权
    Overlay metrology method and overlay control method and system 有权
    覆盖测量方法和覆盖控制方法及系统

    公开(公告)号：US09563946B2

    公开(公告)日：2017-02-07

    申请号：US14338041

    申请日：2014-07-22

    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

    Inventor： Yung-Yao Lee ,  Ying-Ying Wang ,  Shang-Wern Chang ,  Heng-Hsin Liu

    IPC: G01B11/00 ,  G06T7/00 ,  G01N21/956 ,  G01N21/88

    CPC classification number: G06T7/001 ,  G01N21/8851 ,  G01N21/956 ,  G01N21/95607 ,  G01N2021/8887 ,  G06T2207/30148

    Abstract: The present disclosure provides an overlay metrology method, an overlay control method and an overlay control system. The overlay metrology method includes capturing a current layer image of a current overlay mark on a current layer with a current focal length and capturing a previous layer image of a previous overlay mark on a previous layer with a previous focal length. Then, the overlay metrology method further includes combining the current layer image with the previous layer image to form an overlay mark image and determining an overlay error between the current overlay mark and the previous overlay mark based on the overlay mark image.

    Abstract translation: 本公开提供了覆盖计量方法，覆盖控制方法和覆盖控制系统。 覆盖度量方法包括以当前焦距捕获当前层上的当前覆盖标记的当前层图像，并且以先前焦距捕获先前层上的先前叠加标记的先前层图像。 然后，覆盖度量方法还包括将当前层图像与先前层图像组合以形成覆盖标记图像，并且基于重叠标记图像确定当前叠加标记与先前叠加标记之间的重叠误差。

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