公开(公告)号：US20150126037A1

公开(公告)日：2015-05-07

申请号：US14534460

申请日：2014-11-06

Applicant: Tokyo Electron Limited

Inventor： Lee Chen ,  Zhiying Chen

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01J37/32935 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3244 ,  H01J37/32697 ,  H01J37/32899 ,  H01L21/3065 ,  H01L21/67069

Abstract: This disclosure relates to a plasma processing system for controlling plasma density across a substrate and maintaining a tight ion energy distribution within the plasma. In one embodiment, this may include using a dual plasma chamber system including a non-ambipolar plasma chamber and a DC plasma chamber adjacent to the non-ambipolar system. The DC plasma chamber provide power to generate the plasma by rotating the incoming power between four inputs from a VHF power source. In one instance, the power to each of the four inputs are at least 90 degrees out of phase from each other.

Abstract translation: 本公开涉及一种等离子体处理系统，用于控制衬底上的等离子体密度并维持等离子体内紧密的离子能量分布。 在一个实施例中，这可以包括使用包括非双极等离子体室和与非双极系统相邻的DC等离子体室的双等离子体室系统。 DC等离子体室通过在VHF电源的四个输入之间旋转输入功率而提供功率以产生等离子体。 在一种情况下，四个输入中的每一个的功率彼此相位至少为90度。

公开(公告)号：US20140360670A1

公开(公告)日：2014-12-11

申请号：US14026092

申请日：2013-09-13

Applicant: Tokyo Electron Limited

Inventor： Lee Chen ,  Merritt Funk ,  Zhiying Chen

IPC: H01J37/32

CPC classification number: H01J37/32357

Abstract: A processing system is disclosed, having a plasma source chamber that excites source plasma to generate an electron beam, and a process chamber that houses a substrate for exposure of the substrate to the electron beam. The processing system also includes an electron injector that injects electrons from the source plasma into the electron beam as the electron beam enters the process chamber. The electron beam includes a substantially equal number of electrons and positively charged ions in the process chamber. In one embodiment, the processing system also includes a magnetic field generator that generates a magnetic field in the process chamber to capture the electrons included in the electron beam to generate a voltage potential between the magnetic field generator and the substrate. The voltage potential accelerates the positively charged ions to the substrate and minimizes the electrons that reach the substrate.

Abstract translation: 公开了一种处理系统，其具有激发源等离子体以产生电子束的等离子体源室，以及容纳用于将衬底暴露于电子束的衬底的处理室。 处理系统还包括电子注入器，当电子束进入处理室时，电子注入器将电子从源等离子体注入电子束。 电子束在处理室中包括基本上相等数量的电子和带正电荷的离子。 在一个实施例中，处理系统还包括磁场发生器，其在处理室中产生磁场以捕获包括在电子束中的电子，以在磁场发生器和衬底之间产生电压电位。 电压电位将带正电荷的离子加速到衬底并使到达衬底的电子最小化。

公开(公告)号：US20140262040A1

公开(公告)日：2014-09-18

申请号：US13842965

申请日：2013-03-15

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jianping Zhao ,  Peter L. G. Ventzek ,  Lee Chen ,  Barton Lane ,  Merritt Funk ,  Radha Sundararajan ,  Iwao Toshihiko ,  Zhiying Chen

IPC: H01J37/32

CPC classification number: H01J37/32256

Abstract: A plasma-tuning rod configured for use with a microwave processing system. The waveguide includes a first dielectric portion having a first outer diameter. A second dielectric portion, with a second outer diameter greater than the first outer diameter surrounds the first dielectric portion, and may be coaxial therewith. In some embodiments of the present invention, a dielectric constant of the first dielectric portion may be equal to or greater than a dielectric constant of the second dielectric portion.

Abstract translation: 一种配置成与微波处理系统一起使用的等离子体调节杆。 波导包括具有第一外径的第一电介质部分。 具有大于第一外径的第二外径的第二电介质部分围绕第一电介质部分，并且可以与其同轴。 在本发明的一些实施例中，第一电介质部分的介电常数可以等于或大于第二电介质部分的介电常数。

公开(公告)号：US08669705B2

公开(公告)日：2014-03-11

申请号：US13830090

申请日：2013-03-14

Applicant: Tokyo Electron Limited

Inventor： Lee Chen ,  Jianping Zhao ,  Ronald V. Bravenec ,  Merritt Funk

IPC: H05B31/26

CPC classification number: H05H1/46 ,  H01J37/32192 ,  H01J37/3222 ,  H01L21/67005 ,  H01Q13/10

Abstract: A surface wave plasma (SWP) source is described. The SWP source comprises an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. The EM wave launcher comprises a slot antenna having at least one slot. The SWP source further comprises a first recess configuration and a second recess configuration formed in the plasma surface, wherein at least one first recess of the first recess configuration differs in size and/or shape from at least one second recess of the second recess configurations. A power coupling system is coupled to the EM wave launcher and configured to provide the EM energy to the EM wave launcher for forming the plasma.

Abstract translation: 描述了表面波等离子体（SWP）源。 SWP源包括电磁（EM）波发射器，其被配置为通过在邻近等离子体的EM波发射器的等离子体表面上产生表面波来将期望的EM波模式中的EM能量耦合到等离子体。 EM波发射器包括具有至少一个时隙的缝隙天线。 SWP源还包括形成在等离子体表面中的第一凹陷构型和第二凹陷构型，其中第一凹槽构型的至少一个第一凹槽的尺寸和/或形状与第二凹部构型的至少一个第二凹部不同。 功率耦合系统耦合到EM波发射器并且被配置为向用于形成等离子体的EM波发射器提供EM能量。

公开(公告)号：US20130228284A1

公开(公告)日：2013-09-05

申请号：US13854910

申请日：2013-04-01

Applicant: TOKYO ELECTRON LIMITED

Inventor： Kazuki DENPOH ,  Peter LG Ventzek ,  Lin Xu ,  Lee Chen

IPC: H01L21/02 ,  H01J31/00

CPC classification number: H01L21/02 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/50 ,  C23C16/505 ,  C23C16/509 ,  C23C16/5096 ,  H01J31/00 ,  H01J37/3244 ,  H01J37/32596

Abstract: A chamber component configured to be coupled to a processing chamber is described. The chamber component comprises one or more adjustable gas passages through which a process gas is introduced to the process chamber. The adjustable gas passage may be configured to form a hollow cathode that creates a hollow cathode plasma in a hollow cathode region having one or more plasma surfaces in contact with the hollow cathode plasma. Therein, at least one of the one or more plasma surfaces is movable in order to vary the size of the hollow cathode region and adjust the properties of the hollow cathode plasma. Furthermore, one or more adjustable hollow cathodes may be utilized to adjust a plasma process for treating a substrate.

公开(公告)号：US20130119854A1

公开(公告)日：2013-05-16

申请号：US13676265

申请日：2012-11-14

Applicant: Tokyo Electron Limited

Inventor： Barton Lane ,  Lee Chen ,  Peter L.G. Ventzek ,  Merritt Funk ,  Jianping Zhao ,  Radha Sundararajan

IPC: H01J1/00

CPC classification number: H01J1/00 ,  H01J37/32082 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32174 ,  H05H1/46 ,  H05H2001/4652 ,  H05H2001/4675

Abstract: A radio frequency (RF) power coupling system is provided. The system has an RF electrode configured to couple RF power to plasma in a plasma processing system, multiple power coupling elements configured to electrically couple RF power at multiple power coupling locations on the RF electrode, and an RF power system coupled to the multiple power coupling elements, and configured to couple an RF power signal to each of the multiple power coupling elements. The multiple power coupling elements include a center element located at the center of the RF electrode and peripheral elements located off-center from the center of the RF electrode. A first peripheral RF power signal differs from a second peripheral RF power signal in phase.

Abstract translation: 提供射频（RF）功率耦合系统。 该系统具有被配置为在等离子体处理系统中将RF功率耦合到等离子体的RF电极，多个功率耦合元件被配置为在RF电极上的多个功率耦合位置处电耦合RF功率，以及耦合到多功率耦合的RF功率系统 元件，并且被配置为将RF功率信号耦合到多个功率耦合元件中的每一个。 多个功率耦合元件包括位于RF电极中心的中心元件和位于离RF电极中心偏离中心的外围元件。 第一外围RF功率信号与第二外围RF功率信号同相不同。

公开(公告)号：US11728135B2

公开(公告)日：2023-08-15

申请号：US14932057

申请日：2015-11-04

Applicant: TOKYO ELECTRON LIMITED

Inventor： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Zhiying Chen

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01J37/32009 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32697 ,  H01J37/32715 ,  H01L21/3065 ,  H01L21/67069

Abstract: This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. In one embodiment, the plasma density may be controlled by reducing the rate of loss of ions to the chamber wall during processing. This may include biasing a dual electrode ring assembly in the plasma chamber to alter the potential difference between the chamber wall region and the bulk plasma region.

公开(公告)号：US10375812B2

公开(公告)日：2019-08-06

申请号：US15082465

申请日：2016-03-28

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Radha Sundararajan

IPC: C23C16/00 ,  H01L21/306 ,  H05H1/46 ,  C23F1/00 ,  H01L21/3065 ,  H01J37/32 ,  H01F41/06

Abstract: A surface wave plasma (SWP) source couples microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). An ICP source, is provided between the SWP source and the substrate and is energized at a low power, less than 100 watts for 300 mm wafers, for example, at about 25 watts. The ICP source couples energy through a peripheral electric dipole coil to reduce capacitive coupling.

公开(公告)号：US20180226255A1

公开(公告)日：2018-08-09

申请号：US15941901

申请日：2018-03-30

Applicant: TOKYO ELECTRON LIMITED

Inventor： Merritt Funk ,  Jianping Zhao ,  Lee Chen

IPC: H01L21/268 ,  H01J37/32

CPC classification number: H01L21/268 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32266

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electromagnetic energy may be conditioned prior to entering the interior cavity to improve uniformity or stability of the electric field. The conditioning may include, but is not limited to, phase angle, field angle, and number of feeds into the interior cavity.

公开(公告)号：US09978568B2

公开(公告)日：2018-05-22

申请号：US14168565

申请日：2014-01-30

Applicant: Tokyo Electron Limited

Inventor： Zhiying Chen ,  Lee Chen ,  Merritt Funk

IPC: H01J37/30 ,  H01J37/32

CPC classification number: H01J37/32899 ,  H01J37/30 ,  H01J37/32082 ,  H01J37/3233

Abstract: A processing system is disclosed, having an electron beam source chamber that excites plasma to generate an electron beam, and an ion beam source chamber that houses a substrate and also excites plasma to generate an ion beam. The processing system also includes a dielectric injector coupling the electron beam source chamber to the ion beam source chamber that simultaneously injects the electron beam and the ion beam and propels the electron beam and the ion beam in opposite directions. The voltage potential gradient between the electron beam source chamber and the ion beam source chamber generates an energy field that is sufficient to maintain the electron beam and ion beam as a plasma treats the substrate so that radio frequency (RF) power initially applied to the processing system to generate the electron beam can be terminated thus improving the power efficiency of the processing system.