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    Semiconductor laser device
    36.
    发明授权
    Semiconductor laser device 有权
    半导体激光器件

    公开(公告)号：US06711197B2

    公开(公告)日：2004-03-23

    申请号：US10120566

    申请日：2002-04-11

    申请人： Tsuyoshi Tojo ,  Shiro Uchida ,  Satoru Kijima

    发明人： Tsuyoshi Tojo ,  Shiro Uchida ,  Satoru Kijima

    IPC分类号： H01S500

    CPC分类号： H01S5/22 ,  H01S5/0655 ,  H01S5/2218 ,  H01S5/2219 ,  H01S5/32341

    摘要： Disclosed is a nitride based III-V group compound semiconductor laser device of ridge waveguide type with an oscillation wavelength of about 410 nm which has a low driving voltage, a high half-width value &thgr;// of a FFP in a direction horizontal to a hetero interface, and a high kink level (i.e., good light output-injected current characteristics over the high-output range). This laser device is similar in structure to the related-art semiconductor laser device except for the current constricting layer formed in a ridge. It has a stacked film composed of an SiO2 film (600 Å thick) and an amorphous Si film (300 Å thick) which are formed on the SiO2 film by vapor deposition. The stacked film covers both sides of the ridge and a p-AlGaN cladding layer extending sideward from the base of the ridge. The SiO2 film and Si film have respective thicknesses which are established such that the absorption coefficient of fundamental horizontal lateral mode is larger than the absorption coefficient of primary horizontal lateral mode. This structure results in a higher kink level, while suppressing the high-order horizontal lateral mode, a larger effective refractive index difference &Dgr;n, and a larger value of &thgr;// without the necessity for reducing the ridge width.

    摘要翻译： 公开了一种振荡波长约410nm的脊波导型氮化物III-V族化合物半导体激光装置，其具有低驱动电压，FFP在水平方向上的高半值宽度θ// 异质界面和高扭结水平（即在高输出范围内具有良好的光输出注入电流特性）。 除了形成在脊中的电流收缩层之外，该激光装置的结构类似于现有技术的半导体激光装置。 它具有由SiO 2膜（600）和通过气相沉积形成在SiO 2膜上的非晶Si膜（300）组成的叠层膜。 堆叠的膜覆盖脊的两侧，并且从脊的底部向侧延伸的p-AlGaN包覆层。 SiO 2膜和Si膜具有各自的厚度，其被建立为使得基本水平横向模式的吸收系数大于初级水平横向模式的吸收系数。 这种结构导致更高的扭结水平，同时抑制高阶水平横向模式，更大的有效折射率差Deltan和更大的θ//值，而不需要减小脊宽度。

    Semiconductor laser
    37.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号：US06693935B2

    公开(公告)日：2004-02-17

    申请号：US09883235

    申请日：2001-06-19

    申请人： Tsuyoshi Tojo ,  Shiro Uchida

    发明人： Tsuyoshi Tojo ,  Shiro Uchida

    IPC分类号： H01S500

    CPC分类号： H01S5/028 ,  H01S5/0213 ,  H01S5/0286 ,  H01S5/32341

    摘要： A semiconductor laser includes semiconductor layers stacked on a substrate, and a pair of resonator end surfaces opposed to each other in the direction perpendicular to the stacking direction. In this semiconductor laser, a light emission side reflecting film is formed on one of the resonator end surfaces. A refractive index of the reflecting film against an emission wavelength of laser light is set to a value between an effective refractive index and a refractive index of the substrate. Another semiconductor laser includes a light emission function layer stack including a cladding layer and an active layer formed on one place of a translucent substrate; two electrodes having different polarities, which are provided on the light emission function layer stack side; and a light leakage preventive film formed on the other plane of the translucent substrate.

    摘要翻译： 半导体激光器包括堆叠在基板上的半导体层和在垂直于层叠方向的方向上彼此相对的一对谐振器端面。 在该半导体激光器中，在一个谐振器端面上形成发光侧反射膜。 相对于激光的发射波长的反射膜的折射率被设定为基板的有效折射率和折射率之间的值。 另一半导体激光器包括发光功能层堆叠，其包括覆盖层和形成在透光性基板的一个位置上的有源层; 设置在发光功能层堆叠侧的具有不同极性的两个电极; 以及形成在透光性基板的另一平面上的防漏膜。

    Semiconductor device, its manufacturing method and substrate for manufacturing a semiconductor device
    39.
    发明授权
    Semiconductor device, its manufacturing method and substrate for manufacturing a semiconductor device 有权

    公开(公告)号：US06482666B1

    公开(公告)日：2002-11-19

    申请号：US09712392

    申请日：2000-11-14

    申请人： Toshimasa Kobayashi ,  Tsuyoshi Tojo

    发明人： Toshimasa Kobayashi ,  Tsuyoshi Tojo

    IPC分类号： H01L2100

    CPC分类号： H01L33/0095 ,  H01L29/045 ,  H01L33/007 ,  H01S5/0201 ,  H01S5/0202 ,  H01S5/0213 ,  H01S5/32341

    摘要： It is intended to provide a semiconductor device, its manufacturing method and substrate for manufacturing the semiconductor device which ensures that good cleavable surfaces be made stably in a semiconductor layer under precise control upon making edges of cleaves surfaces in the semiconductor layer stacked on a substrate even when the substrate is non-cleavable, difficult to cleave or different in cleavable orientation from the semiconductor layer. A semiconductor layer 2 made of III-V compound semiconductors is stacked to form a laser structure on a sapphire substrate 1. In selective locations other than the location of a ridge stripe portion 11 and a mesa portion 12 along a portion of a semiconductor layer 2 where a cavity edge 3 should be made, namely, in locations at opposite sides of the mesa portion 12, stripe-shaped cleavage-assist grooves 4 are made to extend in parallel to the (11-20)-oriented surface of the semiconductor layer 2, and the semiconductor layer 2 and the sapphire substrate 1 are cleaved from the cleavage-assist groove 4 to make the cavity edge 3 made up of the cleavable surface of the semiconductor layer 2.