公开(公告)号：US5371431A

公开(公告)日：1994-12-06

申请号：US846281

申请日：1992-03-04

申请人： Gary W. Jones ,  Ching-Tzong Sune

发明人： Gary W. Jones ,  Ching-Tzong Sune

IPC分类号： H01J1/304 ,  H01J9/02 ,  H01J29/04 ,  H01J29/87 ,  H01J31/12 ,  H01J1/30

CPC分类号： H01J3/021 ,  H01J1/3042 ,  H01J9/025 ,  H01J2201/319

摘要： A vertical microelectronic field emitter includes a conductive top portion and a resistive bottom portion in an elongated column which extends vertically from a horizontal substrate. An emitter electrode may be formed at the base of the column, and an extraction electrode may be formed adjacent the top of the column. The elongated column reduces the parasitic capacitance of the microelectronic field emitter to provide high speed operation, while providing uniform column-to-column resistance. The field emitter may be formed by first forming tips on the face of a substrate and then forming trenches in the substrate around the tips to form columns in the substrate, with the tips lying on top of the columns. The trenches are filled with a dielectric and a conductor layer is formed on the dielectric. Alternatively, trenches may be formed in the face of the substrate with the trenches defining columns in the substrate. Then, tips are formed on top of the columns. The trenches are filled with dielectric and the conductor layer is formed on the dielectric to form the extraction electrodes.

摘要翻译： 垂直微电子场发射器包括从水平衬底垂直延伸的细长柱中的导电顶部部分和电阻底部部分。 发射电极可以形成在柱的底部，并且可以在柱的顶部附近形成引出电极。 细长柱减小微电子场发射器的寄生电容，以提供高速操作，同时提供均匀的柱对列电阻。 场发射器可以通过在衬底的表面上首先形成尖端然后在衬底周围形成尖端的沟槽形成衬底中的柱，其中尖端位于柱的顶部。 沟槽填充有电介质，并且在电介质上形成导体层。 或者，可以在衬底的表面形成沟槽，其中沟槽限定在衬底中的列。 然后，尖端形成在列的顶部。 沟槽用电介质填充，并且导体层形成在电介质上以形成提取电极。

公开(公告)号：US5290400A

公开(公告)日：1994-03-01

申请号：US992528

申请日：1992-12-17

申请人： Stephen M. Bobbio

发明人： Stephen M. Bobbio

IPC分类号： B06B1/02 ,  H02N1/00 ,  H04R19/00

CPC分类号： H02N1/008 ,  B06B1/0292 ,  H04R19/00

摘要： A microelectromechanical transducer including a plurality of strips arranged in an array and maintained in a closely spaced relation by a plurality of spacers. An electrically conductive layer on portions of the strips and spacers distributes electrical signal within the transducer to cause adjacent portions of the strips to move together. The strips and spacers may be formed from a common dielectric layer using microelectronic fabrication techniques. Two transducers may be coupled at an angle offset from parallel for two-dimensional micropositioning. A photodetector and Fresnel lens may be combined with the micropositioner using the transducers for optical scanning microscopy.

摘要翻译： 一种微电子换能器，包括以阵列排列并由多个间隔物保持紧密间隔的多个条。 条带和间隔物的部分上的导电层在换能器内分布电信号，以使条带的相邻部分一起移动。 条带和间隔物可以由使用微电子制造技术的公共介电层形成。 两个换能器可以以与平行偏移的角度耦合以进行二维微定位。 光电检测器和菲涅尔透镜可以使用光学扫描显微镜的换能器与微型定位器组合。

公开(公告)号：US5201995A

公开(公告)日：1993-04-13

申请号：US852411

申请日：1992-03-16

申请人： Arnold Reisman ,  Dorota Temple

发明人： Arnold Reisman ,  Dorota Temple

IPC分类号： C23C16/04 ,  C23C16/455 ,  H01L21/20 ,  H01L21/285 ,  H01L21/3065 ,  H01L21/768

CPC分类号： C23C16/04 ,  C23C16/455 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02546 ,  H01L21/02642 ,  H01L21/28562 ,  H01L21/30655 ,  H01L21/76879

摘要： A novel process for the selective deposition of solid-phase materials is disclosed, which process requires only the modulation of a single auxiliary gas within a suitable reactor assembly. According to the disclosed method, selective area deposition can be obtained on any desired microelectronic substrate by the creation of a vapor-phase chemical equilibrium system capable of deposition and etching the material to be deposited. The vapor-phase system is designed around a single reversible reaction wherein the material to be deposited equilibrates between that solid phase and its vapor-phase constituent species. By modulating an auxiliary gas flow into the reactor assembly, alternating deposition and etching processes can be obtained to yield an overall process which results in net overall selective and uniform deposition.

摘要翻译： 公开了用于选择性沉积固相材料的新方法，该方法仅需要在合适的反应器组件内调节单个辅助气体。 根据所公开的方法，通过产生能够沉积和蚀刻待沉积材料的气相化学平衡系统，可以在任何所需的微电子衬底上获得选择性区域沉积。 气相系统围绕单个可逆反应设计，其中待沉积的材料在该固相与其气相成分物质之间平衡。 通过调节辅助气流进入反应器组件，可以获得交替的沉积和蚀刻工艺，以产生总体选择性和均匀沉积的整体过程。

公开(公告)号：US5051786A

公开(公告)日：1991-09-24

申请号：US426571

申请日：1989-10-24

申请人： Edward H. Nicollian ,  Arnold Reiman ,  Raphael Tsu

发明人： Edward H. Nicollian ,  Arnold Reiman ,  Raphael Tsu

IPC分类号： H01L21/324 ,  H01L29/15 ,  H01L29/16

CPC分类号： H01L21/324 ,  H01L21/3245 ,  H01L29/154 ,  H01L29/1604

摘要： The internal grain boundaries and intergranular spaces of polycrystalline semiconductor material may be passivated with an amorphous material, to substantially eliminate the dangling bonds at the internal grain boundaries. The passivated polycrystalline material of the present invention exhibits a lower electrically active defect density at the grain boundaries and intergranular space compared to unpassivated polycrystalline material. Moreover, large classes of amorphous passivating materials may be used for each known semiconductor material so that the passivating process may be readily adapted to existing process parameters and other device constraints. Passivated polycrystalline material may be employed to form the well or low energy bandgap layer of a quantum well device or superlattice, while still maintaining the required tunneling effect. By freeing quantum well devices from the requirement to use monocrystalline well material deeper wells may be produced, and a wider range of materials may be used, with high yields and low cost processes.

摘要翻译： 多晶半导体材料的内部晶界和晶间空间可以用无定形材料钝化，以基本上消除内部晶界处的悬挂键。 与未钝化的多晶材料相比，本发明的钝化多晶材料在晶界和晶间间隙处表现出较低的电活性缺陷密度。 而且，对于每种已知的半导体材料，可以使用大类非晶体钝化材料，使得钝化工艺可以容易地适应现有工艺参数和其它器件限制。 可以采用钝化多晶材料来形成量子阱器件或超晶格的阱或低能带隙层，同时仍然保持所需的隧道效应。 通过将量子阱器件从使用单晶阱材料的要求释放，可以生产较深的阱，并且可以使用更宽范围的材料，具有高产率和低成本的工艺。

公开(公告)号：US5045166A

公开(公告)日：1991-09-03

申请号：US526572

申请日：1990-05-21

申请人： Stephen M. Bobbio

发明人： Stephen M. Bobbio

IPC分类号： B01J19/08 ,  B01J19/12 ,  H01J37/32 ,  H05H1/54

CPC分类号： H01J37/32357 ,  B01J19/087 ,  B01J19/126 ,  H05H1/54 ,  B01J2219/0852 ,  B01J2219/0854 ,  B01J2219/0894

摘要： A method and apparatus for magnetron gas discharge processing of substrates using a remote plasma source provides a uniform magnetic field (B) created across the surface of a substrate in an evacuable chamber. An electric field (E) is created perpendicular to the substrate by an electrically powered cathode located beneath the substrate. The magnetic and electric fields interact with the plasma to create an E.times.B electron drift region adjacent to the surface of a substrate. A remote plasma source is provided and oriented so that the plasma stream from the remote source is coupled to the E.times.B region adjacent to the substrate surface parallel to the magnetic field with minimal movement of the plasma stream perpendicular to the magnetic field to thereby provide a high density plasma stream into the E.times.B drift region.

摘要翻译： 使用远程等离子体源的基板的磁控管气体放电处理的方法和装置提供了在可抽空室中跨越衬底的表面产生的均匀的磁场（B）。 通过位于衬底下方的电动阴极垂直于衬底产生电场（E）。 磁场和电场与等离子体相互作用以产生邻近衬底表面的ExB电子漂移区。 远程等离子体源被提供和定向，使得来自远程源的等离子体流与垂直于磁场的等离子体流的最小移动以平行于磁场的方式耦合到与衬底表面相邻的ExB区域，从而提供高的 密度等离子体流进入ExB漂移区域。

公开(公告)号：US5009360A

公开(公告)日：1991-04-23

申请号：US486064

申请日：1990-02-27

申请人： Arnold Reisman ,  Deepak Nayak ,  Iwona Turlik

发明人： Arnold Reisman ,  Deepak Nayak ,  Iwona Turlik

IPC分类号： B23K20/16

CPC分类号： B23K20/16

摘要： A method and resulting structure is disclosed in which a metal-to-metal bond is formed by heating the surfaces to be bonded in an oxidizing ambient atmosphere until the desired bond is achieved. Heating takes place at 700.degree. C.-1200.degree. C. and bonding may be enhanced by applying pressure between the surfaces while heating.

摘要翻译： 公开了一种方法和结果，其中通过在氧化环境气氛中加热要结合的表面直到达到所需的粘结而形成金属 - 金属键。 加热在700℃-1200℃下进行，加热时可在表面之间施加压力来增强粘结。

公开(公告)号：US06924921B2

公开(公告)日：2005-08-02

申请号：US10743418

申请日：2003-12-22

申请人： John South Lewis, lll ,  Scott Halden Goodwin-Johansson ,  Brian Rhys Stoner ,  Sonia Grego ,  David Edward Dausch

发明人： John South Lewis, lll ,  Scott Halden Goodwin-Johansson ,  Brian Rhys Stoner ,  Sonia Grego ,  David Edward Dausch

IPC分类号： C30B5/00 ,  C30B7/00 ,  G02B6/122 ,  G02B26/00

CPC分类号： B82Y20/00 ,  C30B5/00 ,  C30B7/005 ,  C30B29/60 ,  G02B6/1225 ,  Y10S117/902 ,  Y10S117/913 ,  Y10T428/261 ,  Y10T428/265 ,  Y10T428/31504

摘要： A three dimensional photonic crystal and layer-by-layer processes of fabricating the photonic crystal. A substrate is exposed to a plurality of first microspheres made of a first material, the first material being of a type that will bond to the templated substrate and form a self-passivated layer of first microspheres to produce a first layer. The first layer is exposed to a plurality of second microspheres made of a second material, the second material being of a type that will bond to the first layer and form a self-passivated layer of second microspheres. This layering of alternating first and second microspheres can be repeated as desired to build a three dimensional photonic crystal of desired geometry. Charged polymers such as polyelectrolyte coatings can be used to create the bonds.

摘要翻译： 一个三维光子晶体和逐层制造光子晶体的过程。 将基底暴露于由第一材料制成的多个第一微球体中，第一材料是将结合到模板底物并形成第一微球的自钝化层以产生第一层的类型。 第一层暴露于由第二材料制成的多个第二微球，第二材料是将结合到第一层并形成第二微球的自钝化层的类型。 交替的第一和第二微球的这种层叠可以根据需要重复以构建所需几何形状的三维光子晶体。 可以使用带电聚合物如聚电解质涂层来形成结合。

公开(公告)号：US06906598B2

公开(公告)日：2005-06-14

申请号：US10334985

申请日：2002-12-31

申请人： Mark W. Roberson ,  Philip A. Deane ,  Charles Kenneth Williams

发明人： Mark W. Roberson ,  Philip A. Deane ,  Charles Kenneth Williams

IPC分类号： G02B6/30 ,  H01P5/18 ,  H01P5/00

CPC分类号： H01P5/185 ,  H01P5/187

摘要： Three dimensional electronic and optical coupling devices that are capable of providing high speed coupling over a large frequency range while limiting the amount of space consumption in the communications network. An optical or electrical coupling device comprises a first substrate and a second substrate adjacent to the first substrate having one or more optical waveguides or microstrips formed thereon. The substrates will have disposed thereon conductive microstrips and/or dielectric elements. The one or more optical waveguides or microstrips formed on the first substrate correspond to at least one optical waveguides or microstrips formed on the second substrate so as to facilitate optical coupling between the corresponding waveguides. Precise spacing between the substrates and precise spacing between the optical waveguides or microstrips facilitate the requisite optical/RF coupling.

摘要翻译： 三维电子和光耦合器件能够在大的频率范围内提供高速耦合，同时限制通信网络中的空间消耗量。 光学或电耦合装置包括第一衬底和与第一衬底相邻的第二衬底，其具有在其上形成的一个或多个光波导或微带。 衬底将布置在其上导电微带和/或电介质元件。 形成在第一基板上的一个或多个光波导或微带对应于形成在第二基板上的至少一个光波导或微带，以便于相应波导之间的光耦合。 基板之间的精确间隔和光波导或微带之间的精确间隔有助于所需的光/ RF耦合。

公开(公告)号：US20040114868A1

公开(公告)日：2004-06-17

申请号：US10321348

申请日：2002-12-17

申请人： MCNC

发明人： Mark W. Roberson

IPC分类号： G02B006/26

CPC分类号： B82Y20/00 ,  G02B6/1225 ,  G02B6/1228 ,  G02F1/0356 ,  H01L2223/6627 ,  H01L2924/1903 ,  H01P5/02 ,  H01P5/08

摘要： Impedance control elements that are implemented in conjunction with the transition region of an electromagnetic waveguide to diminish the effect of reflective pulses on the signal transmission and to create linear impedance transition in the transition region are provided for. The device of the present invention provides the stated benefits in electromagnetic waveguides that are capable of high bandwidth signal transmission.

公开(公告)号：US20030033542A1

公开(公告)日：2003-02-13

申请号：US10166921

申请日：2002-06-11

申请人： MCNC

发明人： Katerina Goseva-Popstojanova ,  Feiyi Wang ,  Rong Wang ,  Fengmin Gong ,  Kalyanaraman Vaidyanathan ,  Kishor Trivedi ,  Balamurugan Muthusamy

IPC分类号： G06F011/30

CPC分类号： H04L63/1433 ,  H04L63/1441

摘要： An intrusion tolerant communication network and related methods is provided that places emphasis on continuity of operation and provides for an attack-survivable communication network whose network devices collectively accomplish the specified networking intent even under attack and despite active intrusions. The present invention defines methods for network intrusion tolerance in terms of the various state transitions that maximize the overall effectiveness of an intrusion tolerant communication network.

摘要翻译： 提供了一种入侵容忍通信网络和相关方法，其强调操作的连续性并且提供可攻击生存的通信网络，其网络设备即使在被攻击的情况下也共同完成指定的网络意图，并且尽管主动入侵。 本发明根据使入侵容忍通信网络的总体有效性最大化的各种状态转换来定义网络入侵容限的方法。