公开(公告)号：US20190237290A1

公开(公告)日：2019-08-01

申请号：US16381512

申请日：2019-04-11

申请人： ULVAC, INC.

发明人： Takumi YUZE ,  Toshihiro TERASAWA ,  Naruyasu SASAKI

IPC分类号： H01J37/08 ,  H01J37/317 ,  H01J37/30

摘要： An ion source having an ion generation container configured to generate ions by reacting ionized gas introduced into the container via a tubular gas introduction pipe with an ion source material emitted in the container. The gas introduction pipe is configured to introduce the ionized gas into an inner space of the gas introduction pipe via a gas supply pipe. In the inner space of the gas introduction pipe, a detachable cooling trap member is disposed and includes a cooling trap portion configured to cool and trap a byproduct produced in the ion generation container. The cooling trap portion is disposed near a supply-side leading end of the gas supply pipe in the inner space of the gas introduction pipe and is not contact with an interior wall face of the gas introduction pipe.

公开(公告)号：US20190211935A1

公开(公告)日：2019-07-11

申请号：US16308340

申请日：2017-10-03

申请人： ULVAC, INC.

发明人： Shinichi WADA ,  Hideaki INOUE ,  Harukuni FURUSE ,  Takuya WADE ,  Jirou ENDO ,  Mikiya SUZUKI ,  Shinnosuke TOKUHIRA

IPC分类号： F16K3/10

CPC分类号： F16K3/10 ,  F16K3/06 ,  F16K3/18 ,  F16K51/02

摘要： A gate valve of the invention includes a valve box, a neutral valve body, and a rotation shaft. The neutral valve body includes a neutral valve and a movable valve. The movable valve includes a first movable valve and a second movable valve. The gate valve includes a plurality of first force-applying units, a second force-applying unit, and a third force-applying unit. The third force-applying unit applies a force to the first movable valve. The first force-applying units apply a force to the first movable valve and thereby causing the seal portion to be in close contact with a valve box inner surface located at a periphery of the first opening portion. The second force-applying unit drives the first movable valve and the second movable valve so that thicknesses thereof in the flow passage direction are adjustable.

公开(公告)号：US10276827B2

公开(公告)日：2019-04-30

申请号：US14896572

申请日：2014-05-21

申请人： Ulvac, Inc.

发明人： Tadashi Oka ,  Yuko Kato ,  Takahiro Yajima ,  Yousuke Matsumoto ,  Shouta Kanai ,  Yasuaki Murata

IPC分类号： H01L51/56 ,  H01L51/52 ,  H01L51/00

摘要： To provide a device structure that is capable of preventing oxygen, water, and the like from entering the device, and a method of producing the same.A device structure 10 according to an embodiment of the present invention includes a substrate (base) 2, a device layer 3, a first inorganic material layer (convex portion) 41, and a first resin material 51. The substrate 2 has a first surface 2a and a second surface 2c opposite to the first surface 2a. The device layer 3 is arranged on at least the first surface 2a out of the first and second surfaces 2a and 2c. The first inorganic material layer 41 is formed on the first surface 2a. The first resin material 51 is unevenly arranged around the first inorganic material layer 41.

公开(公告)号：US20180370733A1

公开(公告)日：2018-12-27

申请号：US16004906

申请日：2018-06-11

申请人： ULVAC, Inc.

发明人： Hirotoshi NAKAO

IPC分类号： B65G17/12 ,  B65G17/32 ,  B65G49/06 ,  H01L21/677 ,  C23C14/34

摘要： The present invention provides a technique to enable sufficient space saving in a transit-type vacuum processing device. The vacuum processing device 1 of the present invention has: a vacuum chamber 2 where a single vacuum ambience is formed; first and second processing regions 4 and 5 that are provided in the vacuum chamber 2 and have a processing source that performs processing on a planar process surface of a substrate 10; and a conveyance drive member 33 that forms a conveyance path for conveying the substrate 10 so as to pass through the first and second processing regions 4 and 5. The conveyance path is formed as a single annular path when the conveyance path is projected onto a plane (vertical plane) containing: a normal line of an arbitrary point on a process surface of the substrate 10 conveyed through the conveyance path, and a trajectory line drawn by the arbitrary point on the process surface of the substrate 10 when the substrate 10 passes straight through the first and second processing regions 4 and 5.

公开(公告)号：US20180254192A1

公开(公告)日：2018-09-06

申请号：US15755396

申请日：2016-08-17

申请人： ULVAC, INC.

发明人： TAKASHI KAGEYAMA ,  TETSUYA SHIMADA ,  KOJI TAKAHASHI ,  YUU NAKAMUTA ,  MANABU HARADA

IPC分类号： H01L21/32 ,  H01L23/00 ,  H01L21/56 ,  H01L21/673 ,  H01L23/29 ,  H01L23/31 ,  H01L21/02

摘要： According to a mode of the present invention, a method of manufacturing an electronic component includes: preparing a component main-body 110 including a first surface having an electrode-formed region having a plurality of bump electrodes 103, a second surface opposite to the first surface, and side peripheral surfaces connecting the first surface and the second surface; forming a mask section M1 on at least a peripheral portion of the first surface, the mask section surrounding the electrode-formed region, a height of the mask section being equal to or more than a height of the plurality of bump electrodes; bonding the mask section of the first surface to an adhesive layer 30 on a holder for holding a component; forming a protective film 105 on the component main-body, the protective film covering the second surface and the side peripheral surfaces; and removing the mask section M1 from the first surface.

公开(公告)号：US20180248075A1

公开(公告)日：2018-08-30

申请号：US15756835

申请日：2016-09-02

申请人： MARUBUN CORPORATION ,  TOSHIBA KIKAI KABUSHIKI KAISHA ,  RIKEN ,  ULVAC, INC. ,  TOKYO OHKA KOGYO CO., LTD.

发明人： Yukio KASHIMA ,  Eriko MATSUURA ,  Mitsunori KOKUBO ,  Takaharu TASHIRO ,  Hideki HIRAYAMA ,  Ryuichiro KAMIMURA ,  Yamato OSADA ,  Toshiro MORITA

IPC分类号： H01L33/10 ,  H01L33/06 ,  H01L33/14 ,  H01L33/20 ,  H01L33/32 ,  H01L33/40 ,  H01L33/58 ,  H01L33/00

摘要： Provided is a deep ultraviolet LED with a design wavelength λ, including a reflecting electrode layer, an ultra-thin metal layer, and a p-type contact layer that are arranged in this order from a side opposite to a substrate; and a hemispherical lens bonded to a rear surface of the substrate on a side of the p-type contact layer, the hemispherical lens being transparent to light with the wavelength λ. The refractive index of the hemispherical lens is greater than or equal to the average value of the refractive index of the substrate and the refractive index of air and is less than or equal to the refractive index of the substrate. The hemispherical lens has a radius that is greater than or equal to the radius of an inscribed circle of the substrate and is about equal to the radius of a circumscribed circle of the substrate.

公开(公告)号：US10050265B2

公开(公告)日：2018-08-14

申请号：US14955137

申请日：2015-12-01

申请人： Samsung Electronics Co., Ltd. ,  ULVAC, INC.

发明人： Ryo Omoda ,  Takanobu Yamada ,  Haruhisa Nakano ,  Hirohiko Murakami ,  Naoki Tsukahara ,  Tatsuhiro Nozue ,  Yoshiaki Fukuda ,  Yuichi Aihara

IPC分类号： H01M4/04 ,  H01M4/13 ,  H01M4/139 ,  H01M4/38 ,  H01M4/62 ,  H01M10/052

摘要： A positive electrode for an alkali metal-sulfur battery, the positive electrode including: a porous conductive material layer including a plurality of nanocarbon structures of a conductive material, wherein the conductive material defines a plurality of pores between the plurality of nanocarbon structures of the conductive material; sulfur, which is contained in the plurality of pores of the porous conductive material layer; and a polymer film disposed directly on at least a portion of the porous conductive material layer.

公开(公告)号：US09984870B2

公开(公告)日：2018-05-29

申请号：US15198537

申请日：2016-06-30

申请人： International Business Machines Corporation ,  ULVAC, INC.

发明人： Takashi Ando ,  Vijay Narayanan ,  Yohei Ogawa ,  John Rozen

IPC分类号： H01L21/02

CPC分类号： H01L21/02304 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02301

摘要： A technique relates to in-situ cleaning of a high-mobility substrate. Alternating pulses of a metal precursor and exposure to a plasma of a gas or gas mixture are applied. The gas or gas mixture contains both nitrogen and hydrogen (e.g., NH3). A passivation layer is formed on the high-mobility substrate by alternating pulses of the metal precursor and exposure to the plasma of a gas, or gas mixture, containing both nitrogen and hydrogen.

公开(公告)号：US09972695B2

公开(公告)日：2018-05-15

申请号：US15228160

申请日：2016-08-04

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  ULVAC, Inc.

发明人： Vijay Narayanan ,  Yohei Ogawa ,  John Rozen

IPC分类号： H01L29/51 ,  H01L21/306 ,  H01L21/02 ,  H01L29/66 ,  H01L29/20 ,  H01L29/78 ,  H01L21/28 ,  H01L29/423 ,  H01L29/06

CPC分类号： H01L29/513 ,  H01L21/02043 ,  H01L21/02178 ,  H01L21/02186 ,  H01L21/02194 ,  H01L21/02205 ,  H01L21/02241 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02307 ,  H01L21/28264 ,  H01L21/30612 ,  H01L29/0669 ,  H01L29/20 ,  H01L29/42364 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66522 ,  H01L29/66545 ,  H01L29/66575 ,  H01L29/78 ,  H01L29/7827 ,  H01L29/7851

摘要： A method of forming a gate stack that includes treating a semiconductor substrate with a wet etch chemistry to clean a surface of the semiconductor substrate and form an oxide containing interfacial layer, and converting the oxide containing interfacial layer to a binary alloy oxide based interlayer using a plasma deposition sequence including alternating a metal gas precursor and a nitrogen and/or hydrogen containing plasma. The method of forming the gate stack may further include forming a high-k dielectric layer atop the binary alloy oxide based interlayer.

公开(公告)号：US09972479B2

公开(公告)日：2018-05-15

申请号：US15329129

申请日：2015-06-18

申请人： ULVAC, INC.

发明人： Shinya Nakamura ,  Yoshihiro Ikeda ,  Yoshinori Fujii ,  Yuusuke Miyaguchi

IPC分类号： H01J37/34 ,  C23C14/34 ,  C23C14/08

CPC分类号： H01J37/3435 ,  C23C14/081 ,  C23C14/3407 ,  H01J37/3423 ,  H01J37/3426 ,  H01J37/3497

摘要： A target assembly is provided which is capable of preventing abnormal discharging from being generated between a projected portion of a backing plate and a side surface of a target, and which is also capable of surely preventing a bonding material that bonds the target and the backing plate together from seeping to the outside. The backing plate has a projected portion which is projected outward beyond an outer peripheral end of the target, and an annular shield plate is disposed to lie opposite to the projected portion so as to enclose the target in a state in which the target assembly is assembled onto a sputtering apparatus (SM). That portion of the backing plate to which the target gets bonded is defined as a bonding portion, and this bonding portion is protruded relative to the projected portion.