公开(公告)号：US06669256B2

公开(公告)日：2003-12-30

申请号：US10009471

申请日：2001-11-07

Applicant: Yoshikazu Nakayama ,  Seiji Akita ,  Akio Harada ,  Takashi Okawa

Inventor： Yoshikazu Nakayama ,  Seiji Akita ,  Akio Harada ,  Takashi Okawa

IPC: B25J1512

CPC classification number: B25J7/00 ,  B81B2201/032 ,  B81B2201/12 ,  B81B2203/0118 ,  B81C99/002 ,  B82B3/00 ,  G01Q80/00 ,  Y10S977/732 ,  Y10S977/734 ,  Y10S977/742 ,  Y10S977/778 ,  Y10S977/78 ,  Y10S977/837 ,  Y10S977/842 ,  Y10S977/858 ,  Y10S977/863 ,  Y10S977/875 ,  Y10S977/876 ,  Y10S977/89 ,  Y10S977/901 ,  Y10S977/962

Abstract: To provide nanotweezers and a nanomanipulator which allow great miniaturization of the component and are capable of gripping various types of nano-substances such as insulators, semiconductors and conductors and of gripping nano-substances of various shapes. Electrostatic nanotweezers 2 are characterized in that the nanotweezers 2 are comprised of a plurality of nanotubes whose base end portions are fastened to a holder 6 so that the nanotubes protrude from the holder 6, coating films which insulate and cover the surfaces of the nanotubes, and lead wires 10, 10 which are connected to two of the nanotubes 8, 9; and the tip ends of the two nanotubes are freely opened and closed by means of an electrostatic attractive force generated by applying a voltage across these lead wires. Furthermore, by way of forming a piezo-electric film 32 on the surface of the nanotube 9, and the tip ends of the nanotubes are freely opened and closed by expanding and contracting the piezo-electric film, thus allowing any desired nano-substances to be handled regardless of whether the nano-substances are insulators, semiconductors or conductors. Furthermore, if by way of designing three nanotubes so as to be freely opened and closed by an electrostatic system, nano-substances of various shapes such as spherical, rod-form, etc. can be handled. Moreover, a nanomanipulator that is constructed by combining the nanotweezers with a three-dimensional driving mechanism facilitates the gripping, moving and releasing of nano-substances.

公开(公告)号：US20020158480A1

公开(公告)日：2002-10-31

申请号：US10009471

申请日：2001-11-07

Inventor： Yoshikazu Nakayama ,  Seiji Akita ,  Akio Harada ,  Takashi Okawa

IPC: B25J015/12

CPC classification number: B25J7/00 ,  B81B2201/032 ,  B81B2201/12 ,  B81B2203/0118 ,  B81C99/002 ,  B82B3/00 ,  G01Q80/00 ,  Y10S977/732 ,  Y10S977/734 ,  Y10S977/742 ,  Y10S977/778 ,  Y10S977/78 ,  Y10S977/837 ,  Y10S977/842 ,  Y10S977/858 ,  Y10S977/863 ,  Y10S977/875 ,  Y10S977/876 ,  Y10S977/89 ,  Y10S977/901 ,  Y10S977/962

Abstract: To provide nanotweezers and a nanomanipulator which allow great miniaturization of the component and are capable of gripping various types of nano-substances such as insulators, semiconductors and conductors and of gripping nano-substances of various shapes. Electrostatic nanotweezers 2 are characterized in that the nanotweezers 2 are comprised of a plurality of nanotubes whose base end portions are fastened to a holder 6 so that the nanotubes protrude from the holder 6, coating films which insulate and cover the surfaces of the nanotubes, and lead wires 10, 10 which are connected to two of the nanotubes 8, 9; and the tip ends of the two nanotubes are freely opened and closed by means of an electrostatic attractive force generated by applying a voltage across these lead wires. Furthermore, by way of forming a piezo-electric film 32 on the surface of the nanotube 9, and the tip ends of the nanotubes are freely opened and closed by expanding and contracting the piezo-electric film, thus allowing any desired nano-substances to be handled regardless of whether the nano-substances are insulators, semiconductors or conductors. Furthermore, if by way of designing three nanotubes so as to be freely opened and closed by an electrostatic system, nano-substances of various shapes such as spherical, rod-form, etc. can be handled. Moreover, a nanomanipulator that is constructed by combining the nanotweezers with a three-dimensional driving mechanism facilitates the gripping, moving and releasing of nano-substances.

Abstract translation: 提供纳米管和纳米管操纵器，其允许部件的极小化，并且能够夹持各种类型的纳米物质，例如绝缘体，半导体和导体，并且夹持各种形状的纳米物质。 静电纳米针筒2的特征在于，纳米针筒2由多个纳米管组成，其基端部固定在保持器6上，使得纳米管从支架6突出，绝缘并覆盖纳米管表面的涂膜，以及 引线10,10连接到两个纳米管8,9; 并且通过在这些引线上施加电压而产生的静电吸引力自由地打开和闭合两个纳米管的末端。 此外，通过在纳米管9的表面上形成压电膜32，通过使压电膜膨胀收缩来使纳米管的前端自由地开闭，从而使任何所需的纳米物质 无论纳米物质是绝缘体，半导体还是导体，都要进行处理。 此外，如果通过设计三个纳米管以通过静电系统自由地打开和关闭，则可以处理诸如球形，棒状等各种形状的纳米物质。 此外，通过将纳米技术人员与三维驱动机构组合而构成的纳米机械手有利于纳米物质的夹持，移动和释放。

公开(公告)号：US5866021A

公开(公告)日：1999-02-02

申请号：US713228

申请日：1996-09-12

Applicant: Takayuki Yagi ,  Tsutomu Ikeda ,  Yasuhiro Shimada

Inventor： Takayuki Yagi ,  Tsutomu Ikeda ,  Yasuhiro Shimada

IPC: G01N37/00 ,  B81B3/00 ,  B81C1/00 ,  G01B7/34 ,  G01N27/00 ,  G01Q60/16 ,  G01Q60/24 ,  G01Q60/38 ,  G01Q70/18 ,  G11B9/14 ,  H01J9/02 ,  B44C1/22

CPC classification number: G01Q70/16 ,  B81C1/00111 ,  B82Y35/00 ,  H01J9/025 ,  B81B2201/12 ,  B81C2201/0191

Abstract: A micro-tip is manufactured by forming a recess portion on a first substrate consisting of monocrystalline silicon for forming a tip. A peeling layer is formed on the recess portion, and contact layer is formed on at least a portion other than the peeling layer on the substrate. A tip material layer is formed on the peeling layer and the contact layer. The tip material layer on the peeling layer is transferred onto a second substrate.

Abstract translation: 通过在由用于形成尖端的单晶硅组成的第一衬底上形成凹部来制造微尖端。 在凹部上形成剥离层，在基板上的剥离层以外的至少一部分上形成接触层。 在剥离层和接触层上形成尖端材料层。 剥离层上的尖端材料层被转印到第二基板上。

公开(公告)号：US20170247252A1

公开(公告)日：2017-08-31

申请号：US15444086

申请日：2017-02-27

Applicant: SMARTTIP BV

Inventor： Edin Sarajlic

IPC: B81C1/00

CPC classification number: B81C1/0015 ,  A61B5/150022 ,  A61B5/150282 ,  A61B5/150396 ,  A61B5/150511 ,  A61B5/150519 ,  A61B5/150984 ,  A61B5/15142 ,  A61M37/0015 ,  B81B2201/057 ,  B81B2201/12 ,  B81B2203/0118 ,  B81B2203/0353 ,  B81C1/00087 ,  B81C1/00111 ,  B81C1/00119 ,  B81C2201/0132 ,  B81C2201/0143 ,  B81C2201/0159 ,  B81C2201/0198 ,  C01B21/0687

Abstract: A method of manufacturing a plurality of through-holes in a layer of first material, for example for the manufacturing of a probe comprising a tip containing a channel. To manufacture the through-holes in a batch process, a layer of first material is deposited on a wafer comprising a plurality of pits a second layer is provided on the layer of first material, and the second layer is provided with a plurality of holes at central locations of the pits; using the second layer as a shadow mask when depositing a third layer at an angle, covering a part of the first material with said third material at the central locations, and etching the exposed parts of the first layer using the third layer as a protective layer.

公开(公告)号：US09522821B2

公开(公告)日：2016-12-20

申请号：US14785338

申请日：2014-04-09

Applicant: Bo Cui ,  Ripon Kumar Dey

Inventor： Bo Cui ,  Ripon Kumar Dey

IPC: H01L21/00 ,  B81C1/00 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/3213 ,  B81B1/00 ,  B82Y40/00 ,  G01Q70/12 ,  B82Y30/00

CPC classification number: B81C1/00111 ,  B81B1/008 ,  B81B2201/12 ,  B81B2203/0361 ,  B81C2201/0132 ,  B81C2201/053 ,  B82Y30/00 ,  B82Y40/00 ,  G01Q70/12 ,  H01L21/3065 ,  H01L21/31144 ,  H01L21/32134 ,  H01L21/32139

Abstract: The invention provides a fabrication method of batch producing nano-scale structures, such as arrays of silicon pillars of high aspect ratio. The invention also relates to providing arrays of high aspect ratio silicon pillars fabricated using the improved fabrication method. The array of silicon pillars is fabricated from arrays of low aspect ratio pyramid-shaped structures. Mask formed from a hard material, such as a metal mask, is formed on top of each of the pyramid-shaped structures in a batch process. The pyramid-shaped structures are subsequently etched to remove substrate materials not protected by the hard masks, so that a high aspect ratio pillar or shaft is formed on the pyramid-shaped low aspect ratio base, resulting in an array of high aspect ratio silicon pillars.

Abstract translation: 本发明提供了批量生产纳米级结构的制造方法，例如高纵横比的硅柱阵列。 本发明还涉及使用改进的制造方法制造的高纵横比硅柱阵列。 硅柱阵列由低纵横比金字塔形结构的阵列制成。 由金属掩模等硬质材料形成的掩模在分批处理中形成在每个金字塔形结构的顶部上。 金字塔形结构随后被蚀刻以除去未被硬掩模保护的衬底材料，从而在金字塔形的低纵横比基底上形成高纵横比的柱或轴，从而形成高纵横比硅柱的阵列 。

公开(公告)号：US20160068384A1

公开(公告)日：2016-03-10

申请号：US14785338

申请日：2014-04-09

Applicant: Bo CUI ,  Ripon Kumar DEY

Inventor： Bo CUI ,  Ripon Kumar DEY

IPC: B81C1/00 ,  B81B1/00

CPC classification number: B81C1/00111 ,  B81B1/008 ,  B81B2201/12 ,  B81B2203/0361 ,  B81C2201/0132 ,  B81C2201/053 ,  B82Y30/00 ,  B82Y40/00 ,  G01Q70/12 ,  H01L21/3065 ,  H01L21/31144 ,  H01L21/32134 ,  H01L21/32139

Abstract: The invention provides a fabrication method of batch producing nano-scale structures, such as arrays of silicon pillars of high aspect ratio. The invention also relates to providing arrays of high aspect ratio silicon pillars fabricated using the improved fabrication method. The array of silicon pillars is fabricated from arrays of low aspect ratio pyramid-shaped structures. Mask formed from a hard material, such as a metal mask, is formed on top of each of the pyramid-shaped structures in a batch process. The pyramid-shaped structures are subsequently etched to remove substrate materials not protected by the hard masks, so that a high aspect ratio pillar or shaft is formed on the pyramid-shaped low aspect ratio base, resulting in an array of high aspect ratio silicon pillars.

Abstract translation: 本发明提供了批量生产纳米级结构的制造方法，例如高纵横比的硅柱阵列。 本发明还涉及使用改进的制造方法制造的高纵横比硅柱阵列。 硅柱阵列由低纵横比金字塔形结构的阵列制成。 由金属掩模等硬质材料形成的掩模在分批处理中形成在每个金字塔形结构的顶部上。 金字塔形结构随后被蚀刻以除去未被硬掩模保护的衬底材料，从而在金字塔形的低纵横比基底上形成高纵横比的柱或轴，导致高纵横比硅柱的阵列 。

公开(公告)号：US08821675B2

公开(公告)日：2014-09-02

申请号：US13592763

申请日：2012-08-23

Applicant: Yang Wei ,  Shou-Shan Fan

Inventor： Yang Wei ,  Shou-Shan Fan

IPC: B32B38/00

CPC classification number: B81C1/0015 ,  B81B2201/12 ,  G01Q70/12 ,  H01J1/304 ,  H01J9/025 ,  H01J37/073 ,  H01J2201/30469 ,  Y10T156/1052 ,  Y10T156/1064 ,  Y10T156/1077 ,  Y10T156/1082

Abstract: A method for making a carbon nanotube micro-tip structure is disclosed. A carbon nanotube film structure and an insulting substrate are provided. The insulating substrate includes a surface. At least one strip-shaped recess is defined at the surface. The carbon nanotube film structure is covered on the surface of the insulating substrate, and has a suspended portion covered on the at least one strip-shaped recess. The suspended portion of the carbon nanotube film structure is laser etched, to define a first hollow pattern in the suspended portion and form a patterned carbon nanotube film structure according to the first hollow pattern. The patterned carbon nanotube film structure includes two strip-shaped arms. The two strip-shaped arms are joined at one end to form a tip portion. The tip portion is suspended above the strip-shaped recess.

Abstract translation: 公开了一种制造碳纳米管微尖端结构的方法。 提供碳纳米管膜结构和绝缘基板。 绝缘基板包括表面。 在表面上限定至少一个条状凹槽。 碳纳米管膜结构覆盖在绝缘基板的表面上，并且具有覆盖在至少一个带状凹部上的悬置部分。 激光蚀刻碳纳米管膜结构的悬浮部分，以在悬浮部分中限定第一中空图案，并根据第一中空图案形成图案化的碳纳米管薄膜结构。 图案化碳纳米管薄膜结构包括两个带状臂。 两个带状臂在一端连接以形成尖端部分。 尖端部分悬挂在条状凹槽的上方。

公开(公告)号：US20120279287A1

公开(公告)日：2012-11-08

申请号：US13101253

申请日：2011-05-05

Applicant: Paul S. Andry ,  Bing Dang ,  Steven L. Wright

Inventor： Paul S. Andry ,  Bing Dang ,  Steven L. Wright

IPC: G01B5/28 ,  B05D5/00 ,  C23F1/00

CPC classification number: G01B5/28 ,  B81B2201/12 ,  B81C3/001 ,  B81C2201/0194 ,  G01Q40/02 ,  G01Q70/14 ,  G01Q70/16 ,  G01R1/067 ,  G01R1/06738 ,  G01R1/07378 ,  G01R3/00 ,  G03F7/00

Abstract: Transferable probe tips including a metallic probe, a delamination layer covering a portion of the metallic probe, and a bonding alloy, wherein the bonding alloy contacts the metallic probe at a portion of the probe that is not covered by the delamination layer are provided herein. Also, techniques for creating a transferable probe tip are provided, including etching a handler substrate to form one or more via arrays, depositing a delamination layer in each via array, depositing one or more metals in each via array to form a probe tip structure, and depositing a bonding alloy on a portion of the probe tip structure that is not covered by the delamination layer. Additionally, techniques for transferring transferable probe tips are provided, including removing a handler substrate from a probe tip structure, and transferring the probe tip structure via flip-chip joining the probe tip structure to a target probe head substrate.

Abstract translation: 本发明提供了包括金属探针，覆盖金属探针的一部分的分层和可接合的探针尖端，以及接合合金，其中接合合金在探针的未被分层的覆盖部分处接触金属探针。 此外，提供了用于产生可转移探针尖端的技术，包括蚀刻处理器衬底以形成一个或多个通孔阵列，在每个通孔阵列中沉积分层，在每个通孔阵列中沉积一个或多个金属以形成探针尖端结构， 以及在未被分层层覆盖的探针尖端结构的一部分上沉积接合合金。 此外，提供了用于传送可转移的探针尖端的技术，包括从探针尖端结构去除处理器基底，以及通过将探针尖端结构连接到目标探针头基底的倒装芯片来传送探针尖端结构。

公开(公告)号：US20110048799A1

公开(公告)日：2011-03-03

申请号：US12857737

申请日：2010-08-17

Applicant: Sebastian Kisban ,  Stanislav Herwik ,  Patrick Ruther ,  Tobias Holzhammer ,  Oliver Paul

Inventor： Sebastian Kisban ,  Stanislav Herwik ,  Patrick Ruther ,  Tobias Holzhammer ,  Oliver Paul

IPC: H02G3/00 ,  B81C1/00

CPC classification number: B81C3/004 ,  B81B2201/12 ,  B81B2207/07 ,  B81C3/008 ,  H01R12/79 ,  H05K1/118 ,  H05K3/0058 ,  H05K3/326 ,  H05K3/365 ,  H05K2201/091 ,  H05K2201/1059 ,  Y10T29/49002

Abstract: In a process for assembling a microstructure (1), provision is made of a first microstructure piece (2) having a receiving recess (3) in its surface and a second microstructure piece (5) having a connecting region (6) fitting into the receiving recess (3) and on which is arranged at least one electrical contact element (7a, 7b). Provision is made of a flexible cable (8) having a flat substrate layer (9) made of an electrically insulating material and at least one strip conductor (10) arranged thereon. The cable (8) has at least one tongue (14a, 14b) on which is arranged at least one counter-contact element (11a, 11b) connected to the strip conductor (10). The cable (8) and the microstructure pieces (5) are positioned relative to each other in a preassembly position in which the connecting region (6) is opposite the receiving recess (3) and the tongue (14a, 14b) is aligned between the connecting region (6) and the receiving recess (3). The connecting region (6) is then introduced in the receiving recess (3) by displacement of the microstructure pieces (2, 5) toward one another. In doing so the at least one tongue (14a, 14b) is deflected in the receiving recess (3) in such a way that the at least one counter-contact element (11a, 11b) contacts the at least one contact element (7a, 7b).

Abstract translation: 在组装微结构（1）的方法中，提供在其表面上具有接收凹槽（3）的第一微结构件（2）和具有连接区域（6）的第二微结构件（5） 接收凹部（3），并且其上布置有至少一个电接触元件（7a，7b）。 设置有具有由电绝缘材料制成的平坦基底层（9）的柔性电缆（8）和布置在其上的至少一个带状导体（10）。 电缆（8）具有至少一个舌片（14a，14b），其上设置有至少一个连接到带状导体（10）的反接触元件（11a，11b）。 电缆（8）和微结构件（5）在连接区域（6）与容纳凹部（3）相对的预组装位置中相对定位，并且舌部（14a，14b）在 连接区域（6）和接收凹部（3）。 然后通过使微结构件（2,5）彼此移位将连接区域（6）引入到容纳凹部（3）中。 在这样做时，至少一个舌片（14a，14b）在接收凹部（3）中被偏转，使得至少一个反接触元件（11a，11b）接触至少一个接触元件（7a， 7b）。

公开(公告)号：US07612424B1

公开(公告)日：2009-11-03

申请号：US11385970

申请日：2006-03-21

Applicant: Horacio D. Espinosa ,  Changhong Ke

Inventor： Horacio D. Espinosa ,  Changhong Ke

IPC: H01L29/84 ,  H01L31/109

CPC classification number: B81B3/0054 ,  B81B2201/038 ,  B81B2201/07 ,  B81B2201/12 ,  B81B2203/0118 ,  B82Y10/00 ,  B82Y15/00 ,  G11B9/1445 ,  G11C13/025 ,  G11C23/00 ,  H01H1/0094 ,  H01H59/0009

Abstract: Nano-electromechanical device having an electrically conductive nano-cantilever wherein the nano-cantilever has a free end that is movable relative to an electrically conductive substrate such as an electrode of a circuit. The circuit includes a power source connected to the electrode and to the nano-cantilever for providing a pull-in or pull-out voltage therebetween to effect bending movement of the nano-cantilever relative to the electrode. Feedback control is provided for varying the voltage between the electrode and the nano-cantilever in response to the position of the cantilever relative to the electrode. The device provides two stable positions of the nano-cantilever and a hysteresis loop in the current-voltage space between the pull-in voltage and the pull-out voltage. A first stable position of the nano-cantilever is provided at sub-nanometer gap between the free end of the nano-cantilever and the electrode with a pull-in voltage applied and with a stable tunneling electrical current present in the circuit. A second stable position of the nano-cantilever is provided with a pull-out voltage between the cantilever and the electrode with little or no tunneling electrical current present in the circuit. The nano-electromechanical device can be used in a scanning probe microscope, ultrasonic wave detection sensor, NEMS switch, random access memory element, gap sensor, logic device, and a bio-sensor when the nano-cantilever is functionalized with biomolecules that interact with species present in the ambient environment be them in air or aqueous solutions. In the latest case, the NEMS needs to be integrated with a microfluidic system.

Abstract translation: 具有导电纳米悬臂的纳米机电装置，其中纳米悬臂具有可相对于例如电路的电极的导电基底移动的自由端。 电路包括连接到电极和纳米悬臂的电源，用于在其间提供拉入或拉出电压，以实现纳米悬臂相对于电极的弯曲运动。 提供反馈控制以响应于悬臂相对于电极的位置来改变电极和纳米悬臂之间的电压。 该器件在引入电压和拉出电压之间的电流 - 电压空间中提供了纳米悬臂的两个稳定位置和滞后回路。 在纳米悬臂的自由端和电极之间的亚纳米间隙处提供纳米悬臂的第一稳定位置，其中施加了拉入电压并且在电路中存在稳定的隧道电流。 纳米悬臂的第二稳定位置在悬臂和电极之间提供拉出电压，电路中存在很少或没有隧道电流。 纳米机电装置可用于扫描探针显微镜，超声波检测传感器，NEMS开关，随机存取存储元件，间隙传感器，逻辑器件和生物传感器，当纳米悬臂用与生物分子相互作用的功能化 在环境环境中存在的物质是它们在空气或水溶液中。 在最新的情况下，NEMS需要与微流体系统集成。