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    High-throughput graphene printing and selective transfer using a localized laser heating technique
    32.
    发明授权
    High-throughput graphene printing and selective transfer using a localized laser heating technique 有权
    使用局部激光加热技术的高通量石墨烯印刷和选择性转移

    公开(公告)号：US09573814B2

    公开(公告)日：2017-02-21

    申请号：US14185350

    申请日：2014-02-20

    申请人： THE TRUSTEES OF THE STEVENS INSTITUTE OF TECHNOLOGY

    发明人： Vikram Patil ,  Youn-Su Kim ,  Kitu Kumar ,  Eui-Hyeok Yang

    IPC分类号： H01L21/02 ,  C01B31/04 ,  H01L29/66

    CPC分类号： C01B31/0453 ,  C01B32/186 ,  H01L29/66015 ,  Y10T156/1705

    摘要： A method of high-throughput printing and selective transfer of graphene onto a substrate includes the steps of: providing a thermal release tape having graphene adhered thereto; placing a substrate onto the graphene; pressing the thermal tape and the graphene against the substrate at a uniformly-distributed pressure; heating localized portions of the thermal tape and graphene using a localized heat source, thereby diminishing the adhesive properties of the thermal release tape in the localized portions and transferring graphene from said localized portions to the substrate; and separating the thermal release tape from the substrate. The method may include the further step of moving the localized heat source to selected positions on the thermal release tape during the heating step, thereby forming a pattern of heated portions. The method may use a laser beam as the localized heat source, movement of the laser beam being performed by a computer-controlled deflectable mirror.

    摘要翻译： 将高通量打印和石墨烯选择性转移到基板上的方法包括以下步骤：提供具有粘附在其上的石墨烯的热释放带; 将衬底放置在石墨烯上; 以均匀分布的压力将热敏胶带和石墨烯压在基材上; 使用局部热源加热热带和石墨烯的局部部分，从而减小局部部分中的热释放带的粘合性能，并将石墨烯从所述局部部分转移到基底; 以及将热释放带与基底分离。 该方法可以包括在加热步骤期间将局部热源移动到热释放带上的选定位置的步骤，从而形成加热部分的图案。 该方法可以使用激光束作为局部热源，由计算机控制的可偏转镜执行激光束的移动。

    GRAPHENE FLOWER AND METHOD FOR MANUFACTURING THE SAME AND COMPOSITE MATERIAL
    33.
    发明申请
    GRAPHENE FLOWER AND METHOD FOR MANUFACTURING THE SAME AND COMPOSITE MATERIAL 有权
    石墨花及其制造方法和复合材料

    公开(公告)号：US20170022064A1

    公开(公告)日：2017-01-26

    申请号：US14851923

    申请日：2015-09-11

    申请人： INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

    发明人： Kun-Ping HUANG ,  Chih-Chen CHANG ,  Chwung-Shan KOU

    IPC分类号： C01B31/04 ,  B01J19/12

    CPC分类号： C01B32/186 ,  C01B32/182 ,  C01B32/184

    摘要： A method of forming graphene flower is provided, which includes introducing a hydrocarbon gas and an assistance gas into transformer-coupled plasma equipment, and providing a medium-frequency electromagnetic wave to the hydrocarbon gas and the assistance gas by the transformer-coupled plasma equipment to dissociate the hydrocarbon gas, and the dissociated hydrocarbon gas is re-combined to form the graphene flower, wherein the hydrocarbon gas is dissociated at a ratio of greater than 95%.

    摘要翻译： 提供了一种形成石墨烯花的方法，其包括将碳氢化合物气体和辅助气体引入变压器耦合等离子体设备中，并通过变压器耦合等离子体设备向碳氢化合物气体和辅助气体提供中频电磁波， 解离烃气体，并将解离的烃气体再结合形成石墨烯花，其中烃气体以大于95％的比例离解。

    GRAPHENE TAPE
    37.
    发明申请
    GRAPHENE TAPE 审中-公开

    公开(公告)号：US20160304352A1

    公开(公告)日：2016-10-20

    申请号：US15101121

    申请日：2014-12-05

    申请人： NATIONAL UNIVERSITY OF SINGAPORE

    发明人： Barbaros Ozyilmaz ,  Martin Fernandez ,  Eeshan Sandeep Kulkarni ,  Antonio Helio Castro Neto

    IPC分类号： C01B31/04 ,  B32B37/14 ,  B05D1/18 ,  B05D1/00 ,  B05D1/02 ,  C23C16/50 ,  B32B43/00

    CPC分类号： B05D1/005 ,  B05D1/02 ,  B05D1/18 ,  B32B37/14 ,  B32B43/006 ,  C01B32/182 ,  C01B32/186 ,  C23C16/50

    摘要： The invention relates to a graphene tape. In particular, it relates to the manufacture, the application and possible uses of such a graphene tape. A graphene tape comprising (a) a support layer; and (b) a first nano-composite layer, the nanocomposite layer comprising a thin film layer and a graphene layer, wherein the thin film layer is disposed between the support layer and the graphene layer. A method of manufacture comprising (a) providing a substrate; (b) forming a graphene layer on the substrate; (c) depositing a thin film layer on the graphene layer; (d) applying a supporting layer on the thin film layer; (e) removing the substrate; and (f) applying a protective layer in place of the substrate.

    摘要翻译： 本发明涉及石墨烯带。 特别地，它涉及这种石墨烯带的制造，应用和可能的用途。 一种石墨烯带，包括（a）支撑层; 和（b）第一纳米复合层，所述纳米复合层包括薄膜层和石墨烯层，其中所述薄膜层设置在所述支撑层和所述石墨烯层之间。 一种制造方法，包括（a）提供基底; （b）在基板上形成石墨烯层; （c）在所述石墨烯层上沉积薄膜层; （d）在薄膜层上施加支撑层; （e）除去基材; 和（f）施加保护层代替基底。

    METHOD OF GROWING TWO-DIMENSIONAL CRYSTALS
    38.
    发明申请
    METHOD OF GROWING TWO-DIMENSIONAL CRYSTALS 审中-公开
    生长二维晶体的方法

    公开(公告)号：US20160265104A1

    公开(公告)日：2016-09-15

    申请号：US14720661

    申请日：2015-05-22

    申请人： NATIONAL CHUNG CHENG UNIVERSITY

    发明人： YA-PING HSIEH ,  MARIO HOFMANN ,  YI-JING CHIU

    IPC分类号： C23C16/26 ,  C23C16/02 ,  C01B31/04 ,  C23C16/56

    CPC分类号： C23C16/26 ,  C01B32/186 ,  C23C16/545 ,  C23C16/56

    摘要： A method of growing 2-D crystals includes: providing a plurality of sub-substrates; stacking the plurality of sub-substrates to form a stacked substrate; disposing the stacked substrate into a crystal-growing furnace; pumping a reaction gas into the crystal-growing furnace; and heating the crystal-growing furnace to enable the reaction gas to react on the stacked substrate, and at least one 2-D crystal is formed on at least one surface of the plurality of sub-substrates in the stacked substrate.

    摘要翻译： 生长2-D晶体的方法包括：提供多个子基板; 堆叠多个子基板以形成堆叠的基板; 将堆叠的基板设置在晶体生长炉中; 将反应气体泵入晶体生长炉; 并加热晶体生长炉以使反应气体能够在堆叠的衬底上反应，并且至少一个2-D晶体形成在堆叠衬底中的多个子衬底的至少一个表面上。

    Ordered Growth of Large Crystal Graphene by Laser-Based Localized Heating for High Throughput Production
    39.
    发明申请
    Ordered Growth of Large Crystal Graphene by Laser-Based Localized Heating for High Throughput Production 审中-公开
    通过基于激光的局部加热对高产量生产进行大型晶体石墨烯的有序增长

    公开(公告)号：US20160258081A1

    公开(公告)日：2016-09-08

    申请号：US15032219

    申请日：2014-11-17

    申请人： NATIONAL UNIVERSITY OF SINGAPORE

    发明人： Barbaros Özyilmaz ,  Chee Tat Toh

    IPC分类号： C30B25/10 ,  C01B31/04 ,  C30B29/02 ,  C30B29/60 ,  C30B25/18 ,  C30B25/12

    CPC分类号： C30B25/105 ,  B82Y40/00 ,  C01B32/186 ,  C01B32/188 ,  C30B13/24 ,  C30B25/12 ,  C30B25/18 ,  C30B29/02 ,  C30B29/605 ,  H01L29/1606

    摘要： A method of making an ordered graphene structure includes exposing a substrate to a laser beam to locally melt a portion of the substrate, exposing the substrate to a laser beam in the presence of a carbon source, to form a nucleation site for a graphene crystal, and either a) moving either the substrate or the laser beam relative to the other, or b) decreasing the laser beam power, in order to increase the size of the graphene crystal, thereby forming an ordered graphene structure. The ordered structure can be a plurality of columns, hexagons, or quadrilaterals. Each ordered structure can have a single crystal of graphene. A polymer coating can be formed on the ordered graphene structure to form a coated graphene structure.

    摘要翻译： 制造有序石墨烯结构的方法包括将基板暴露于激光束以局部熔化基板的一部分，在碳源的存在下将基板暴露于激光束，以形成石墨烯晶体的成核位置， 并且a）相对于另一个移动衬底或激光束，或b）降低激光束功率，以增加石墨烯晶体的尺寸，从而形成有序的石墨烯结构。 有序结构可以是多个列，六边形或四边形。 每个有序结构可以具有石墨烯的单晶。 可以在有序的石墨烯结构上形成聚合物涂层以形成涂覆的石墨烯结构。