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    Negative ion sputtering beam source
    31.
    发明授权
    Negative ion sputtering beam source 失效
    负离子溅射光源

    公开(公告)号：US5466941A

    公开(公告)日：1995-11-14

    申请号：US281480

    申请日：1994-07-27

    Applicant: Seong I. Kim

    Inventor： Seong I. Kim

    IPC: H01J27/02 ,  H01J27/26

    CPC classification number: H01J27/028 ,  H01J2237/081 ,  H01J2237/083 ,  H01J2237/3142

    Abstract: A negative ion beam source includes a heated refractory metal ribbon which is positioned adjacent a beam forming electrode that is, biased to repel positive ions emitted from the metal ribbon. An extraction electrode is juxtaposed to the beam forming electrode and includes an aperture for passing a beam of positive ions generated by the metal ribbon. The extraction electrode includes a cesium chamber with openings that are directed towards the refractory metal ribbon. A heater heats the cesium chamber and causes it to expel cesium neutrals towards a surface of the refractory metal ribbon where the cesium neutrals are ionized to positively charged cesium ions. A target is displaced to one side of a perpendicular from the surface of the refractory metal ribbon and is positioned adjacent a negative ion beam forming electrode that is biased to attract the cesium ion beam and to repel negative ions produced by cesium ion bombardment of the target. A negative ion extraction electrode is positioned to another side of the perpendicular line and is biased to repel the cesium ion beam and to attract and pass negative ions formed by bombardment of the target.

    Abstract translation: 负离子束源包括加热的难熔金属带，其位于邻近波束形成电极处，被偏置以排斥从金属带发射的正离子。 提取电极与束形成电极并置，并且包括用于使由金属带产生的正离子束通过的孔。 提取电极包括具有朝向难熔金属带的开口的铯室。 加热器加热铯室并使其将铯中和体朝着难熔金属带的表面排出，其中铯中性粒子被电离成带正电的铯离子。 目标物从位于难熔金属带的表面的垂直线的一侧移动，并且被定位成邻近负离子束形成电极，该负离子束形成电极被偏置以吸引铯离子束并排斥由靶的铯离子轰击产生的负离子 。 负离子提取电极位于垂直线的另一侧，并被偏压以排斥铯离子束并吸引并通过由靶轰击而形成的负离子。

    Metal ion source and a method of producing metal ions
    32.
    发明授权
    Metal ion source and a method of producing metal ions 失效
    金属离子源和金属离子的制造方法

    公开(公告)号：US5315121A

    公开(公告)日：1994-05-24

    申请号：US778807

    申请日：1991-12-13

    Applicant: Andreas Kluge ,  Peter Nelle

    Inventor： Andreas Kluge ,  Peter Nelle

    IPC: C23C14/48 ,  H01J27/22 ,  H01J37/08 ,  H01J37/317 ,  H01L21/265 ,  H01L21/322

    CPC classification number: H01J27/22 ,  H01J37/08 ,  H01J2237/081 ,  H01J2237/082 ,  H01J2237/31701

    Abstract: For simplifying the structure of a metal ion source, in particular for imnting into semiconductor wafers small doses of metals which are hard to vaporize, the metal ion source includes an electrically heatable thermionic cathode in the form of a heating wire within an ion chamber, the heating wire being arranged adjacent a metallic component, which consists of the metal intended to give off the metal ions, and being essentially at the potential of the metallic component.

    Abstract translation: PCT No.PCT / DE90 / 00666 Sec。 371日期1991年12月13日 102（e）日期1991年12月13日PCT 1990年8月31日PCT PCT。 出版物WO91 / 06969 日期为1991年5月16日。为了简化金属离子源的结构，特别是为了将半导体晶片的少量金属注入难以汽化的金属离子源，金属离子源包括加热线形式的可电加热的热离子阴极 在离子室内，加热丝布置在金属部件附近，金属部件由旨在发出金属离子的金属构成，并且基本上处于金属部件的电位。

    TARGET, ADAPTED TO AN INDIRECT COOLING DEVICE, HAVING A COOLING PLATE
    38.
    发明申请
    TARGET, ADAPTED TO AN INDIRECT COOLING DEVICE, HAVING A COOLING PLATE 审中-公开
    适用于具有冷却板的间接冷却装置的目标

    公开(公告)号：US20160172166A1

    公开(公告)日：2016-06-16

    申请号：US14902577

    申请日：2014-06-30

    Applicant: OERLIKON SURFACE SOLUTIONS AG, TRÜBBACH

    Inventor： Denis Kurapov ,  Siegfried Krassnitzer

    IPC: H01J37/34

    CPC classification number: H01J37/3417 ,  C23C14/3407 ,  H01J37/3423 ,  H01J37/3435 ,  H01J37/3497 ,  H01J2237/002 ,  H01J2237/081 ,  H01J2237/3322

    Abstract: A device for cooling a target, having a component that includes a cooling duct and having an additional thermally conductive plate that is detachably fastened to the cooling side of the component, the cooling side being the side on which the cooling duct exerts its cooling action, characterized in that between the additional thermally conductive plate and the cooling side of the component, a first self-adhesive carbon film is provided, which is extensively and self-adhesively glued to the one side of the additional thermally conductive plate that faces the cooling side.

    Abstract translation: 一种用于冷却目标的装置，具有包括冷却管道的部件，并且具有可拆卸地紧固到部件的冷却侧的附加导热板，冷却侧是冷却管道施加其冷却作用的一侧， 其特征在于，在所述附加导热板和所述部件的冷却侧之间，设置有第一自粘性碳膜，所述第一自粘性碳膜被广泛且自粘合地粘附到所述附加导热板的面向冷却侧的一侧 。

    PARTIAL SPRAY REFURBISHMENT OF SPUTTERING TARGETS
    40.
    发明申请
    PARTIAL SPRAY REFURBISHMENT OF SPUTTERING TARGETS 有权
    溅射目标的部分喷雾再造

    公开(公告)号：US20160160341A1

    公开(公告)日：2016-06-09

    申请号：US14908396

    申请日：2014-07-31

    Applicant: H.C. Stark Inc.

    Inventor： Steven A. MILLER

    IPC: C23C14/34 ,  C23C24/04 ,  H01J37/34

    CPC classification number: C23C14/3414 ,  C23C24/04 ,  H01J37/3417 ,  H01J37/3426 ,  H01J2237/081 ,  H01J2237/332

    Abstract: In various embodiments, eroded sputtering targets are partially refurbished by spray-depositing particles of target material to at least partially fill certain regions (e.g., regions of deepest erosion) without spray-deposition within other eroded regions (e.g., regions of less erosion). The partially refurbished sputtering targets may be sputtered after the partial refurbishment without substantive changes in sputtering properties (e.g., sputtering rate) and/or properties of the sputtered films.

    Abstract translation: 在各种实施例中，侵蚀的溅射靶通过喷射沉积目标材料的颗粒而部分地翻新，以至少部分地填充某些区域（例如，最深蚀刻的区域），而不会在其它侵蚀区域（例如较少侵蚀的区域）内进行喷雾沉积。 部分翻新的溅射靶可以在部分翻新之后溅射，而溅射性能（例如，溅射速率）和/或溅射膜的性质没有实质性的变化。

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