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公开(公告)号：US09559292B2
公开(公告)日：2017-01-31
申请号：US15070436
申请日：2016-03-15
IPC分类号： H01L41/332 , H01L41/29 , H01L41/047 , H01L29/84 , H01L27/20 , H01L21/3213
CPC分类号： H01L41/332 , H01L21/32136 , H01L27/20 , H01L29/84 , H01L41/0471 , H01L41/0477 , H01L41/29
摘要： A semiconductor device includes a piezoelectric layer interposed between a first metal layer and a hardmask layer. A first trench extends through the hardmask layer, the piezoelectric layer and the first metal layer. A self-limiting second trench extends through the hardmask layer and the piezoelectric layer without reaching the first metal layer.
摘要翻译： 半导体器件包括介于第一金属层和硬掩模层之间的压电层。 第一沟槽延伸穿过硬掩模层，压电层和第一金属层。 自限制第二沟槽延伸穿过硬掩模层和压电层而不到达第一金属层。
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公开(公告)号：US20160380404A1
公开(公告)日：2016-12-29
申请号：US15140282
申请日：2016-04-27
CPC分类号： H01S3/1053 , B81B2201/02 , B81B2201/042 , B81C1/00158 , B81C1/00634 , B81C2201/0194 , G01L1/24 , G01L9/0005 , G01L9/0072 , G01L11/02 , G02B26/001 , H01L29/84 , H01S3/07 , H01S3/08059 , H01S3/0933 , H01S3/094 , H01S3/0941 , H01S3/106 , H01S3/1305 , H01S3/16 , H01S3/1693
摘要： The disclosure relates to method and apparatus for micro-contact printing of micro-electromechanical systems (“MEMS”) in a solvent-free environment. The disclosed embodiments enable forming a composite membrane over a parylene layer and transferring the composite structure to a receiving structure to form one or more microcavities covered by the composite membrane. The parylene film may have a thickness in the range of about 100 nm-2 microns; 100 nm-1 micron, 200-300 nm, 300-500 nm, 500 nm to 1 micron and 1-30 microns. Next, one or more secondary layers are formed over the parylene to create a composite membrane. The composite membrane may have a thickness of about 100 nm to 700 nm to several microns. The composite membrane's deflection in response to external forces can be measured to provide a contact-less detector. Conversely, the composite membrane may be actuated using an external bias to cause deflection commensurate with the applied bias. Applications of the disclosed embodiments include tunable lasers, microphones, microspeakers, remotely-activated contact-less pressure sensors and the like.
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公开(公告)号：US09520505B2
公开(公告)日：2016-12-13
申请号：US13359490
申请日：2012-01-26
申请人： Goro Nakatani
发明人： Goro Nakatani
CPC分类号： H01L29/84 , B81B3/0021 , B81B2201/0257 , B81B2201/0292 , B81B2203/0109 , B81B2203/04 , B81B2203/051 , H04R19/005
摘要： A capacitance type MEMS sensor has a first electrode portion and a second electrode portion facing each other. The sensor includes a semiconductor substrate having a recess dug in a thickness direction of the semiconductor substrate, the recess having sidewalls, one of which serves as the first electrode portion. The sensor further includes a diaphragm serving as the second electrode portion, the diaphragm arranged within the recess to face the first electrode portion in a posture extending along a depth direction of the recess, the diaphragm having a lower edge spaced apart from the bottom surface of the recess, and is made of the same material as the semiconductor substrate. The sensor further includes an insulating film arranged to join the diaphragm to the semiconductor substrate.
摘要翻译： 电容型MEMS传感器具有彼此面对的第一电极部分和第二电极部分。 传感器包括在半导体衬底的厚度方向上具有凹陷的半导体衬底，该凹部具有侧壁，其中一个侧壁用作第一电极部分。 传感器还包括用作第二电极部分的隔膜，隔膜布置在凹槽内，以沿凹槽深度方向延伸的姿势面对第一电极部分，该隔膜具有与底部表面间隔开的下边缘 并且由与半导体衬底相同的材料制成。 传感器还包括布置成将隔膜连接到半导体衬底的绝缘膜。
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公开(公告)号：US20160332868A1
公开(公告)日：2016-11-17
申请号：US15218852
申请日：2016-07-25
CPC分类号： B81B7/007 , B81B7/0041 , B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81B2201/0264 , B81B2203/0136 , B81B2203/0315 , B81B2207/096 , G01P15/125 , G01P15/18 , H01L23/481 , H01L28/40 , H01L28/60 , H01L28/82 , H01L29/84 , H01L2924/0002 , H01L2924/00
摘要： An apparatus includes a substrate having at least one via disposed in the substrate, wherein the substrate includes a trench having a substantially trapezoidal cross-section, the trench extending through the substrate between a lower surface of the substrate and an upper surface of the substrate, wherein the top of the trench opens to a top opening, and the bottom of the trench opens to a bottom opening, the top opening being larger than the bottom opening. The apparatus can include a mouth surrounding the top opening and extending between the upper surface and the top opening, wherein a mouth opening in the upper surface is larger than the top opening of the trench, wherein the via includes a dielectric layer disposed on an inside surface of a trench. The apparatus includes and a disposed in the trench, with the dielectric layer sandwiched between the fill and the substrate.
摘要翻译： 一种设备包括具有设置在基板中的至少一个通孔的基板，其中基板包括具有大致梯形横截面的沟槽，该沟槽在基板的下表面和基板的上表面之间延伸穿过基板， 其中所述沟槽的顶部通向顶部开口，并且所述沟槽的底部通向底部开口，所述顶部开口大于所述底部开口。 该装置可以包括围绕顶部开口并在上表面和顶部开口之间延伸的口，其中上表面中的开口大于沟槽的顶部开口，其中通孔包括设置在内部的介电层 沟槽表面。 该设备包括并设置在沟槽中，介电层夹在填充物和基底之间。
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35.发明授权公开(公告)号：US09481570B2
公开(公告)日：2016-11-01
申请号：US15050418
申请日：2016-02-22
申请人： ams International AG
CPC分类号： G01L9/0073 , B81B7/008 , B81B2201/0264 , B81B2203/0127 , B81B2207/015 , B81C1/00246 , B81C2203/0735 , B81C2203/0771 , G01L9/0042 , H01L21/28 , H01L29/84
摘要： Disclosed is an integrated circuit, comprising a semiconductor substrate carrying a plurality of circuit elements; and a pressure sensor including a cavity on said semiconductor substrate, said cavity comprising a pair of electrodes laterally separated from each other; and a flexible membrane over and spatially separated from said electrodes such that said membrane interferes with a fringe field between said electrodes, said membrane comprising at least one aperture. A method of manufacturing such an IC is also disclosed.
摘要翻译： 公开了一种集成电路，包括承载多个电路元件的半导体衬底; 以及包括在所述半导体衬底上的空腔的压力传感器，所述空腔包括彼此横向分离的一对电极; 以及在所述电极之间和空间上分离的柔性膜，使得所述膜干扰所述电极之间的边缘场，所述膜包括至少一个孔。 还公开了制造这种IC的方法。
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公开(公告)号：US20160293371A1
公开(公告)日：2016-10-06
申请号：US14675359
申请日：2015-03-31
发明人： Qing LIU , John H. ZHANG
CPC分类号： H01L29/84 , B82B3/00 , H01H1/0094 , H01H49/00 , H01H50/005 , H01H59/0009 , H01H2001/0084 , H01L21/02532 , H01L21/30608
摘要： An integrated transistor in the form of a nanoscale electromechanical switch eliminates CMOS current leakage and increases switching speed. The nanoscale electromechanical switch features a semiconducting cantilever that extends from a portion of the substrate into a cavity. The cantilever flexes in response to a voltage applied to the transistor gate thus forming a conducting channel underneath the gate. When the device is off, the cantilever returns to its resting position. Such motion of the cantilever breaks the circuit, restoring a void underneath the gate that blocks current flow, thus solving the problem of leakage. Fabrication of the nano-electromechanical switch is compatible with existing CMOS transistor fabrication processes. By doping the cantilever and using a back bias and a metallic cantilever tip, sensitivity of the switch can be further improved. A footprint of the nano-electromechanical switch can be as small as 0.1×0.1 μm2.
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公开(公告)号：US09462364B2
公开(公告)日：2016-10-04
申请号：US14426536
申请日：2013-08-12
申请人： OMRON Corporation
发明人： Yuki Uchida , Takashi Kasai
摘要： A capacitance type sensor has a substrate, a vibration electrode plate formed over the substrate, a back plate formed over the substrate so as to cover the vibration electrode plate, and a fixed electrode plate provided on the back plate so as to be opposite to the vibration electrode plate. At least one of the vibration electrode plate and the fixed electrode plate is separated into a plurality of regions, each of the plurality of regions being formed with a sensing section including the vibration electrode plate and the fixed electrode plate. A barrier electrode is provided between respective sensing sections of at least one adjacent pair of regions of the plurality of regions to prevent signal interference between the respective sensing sections.
摘要翻译： 电容式传感器具有基板，形成在基板上的振动电极板，形成在基板上的覆盖振动电极板的背板和设置在背板上的固定电极板，以与 振动电极板。 振动电极板和固定电极板中的至少一个被分离成多个区域，所述多个区域中的每个区域形成有包括振动电极板和固定电极板的感测部分。 阻挡电极设置在多个区域中的至少一个相邻的一对区域的相应感测部分之间，以防止各个感测部分之间的信号干扰。
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38.发明授权公开(公告)号：US09448251B2
公开(公告)日：2016-09-20
申请号：US14004595
申请日：2012-02-23
申请人： Lianjun Liu
发明人： Lianjun Liu
IPC分类号： G01P15/125 , G01P15/02 , G01P15/08 , B81B7/02 , H01L29/84 , G01C19/574 , G01C19/5769
CPC分类号： G01P15/02 , B81B7/02 , B81B2201/025 , B81B2201/0264 , G01C19/574 , G01C19/5769 , G01P15/0802 , G01P15/125 , H01L29/84
摘要： An integrated inertial sensor and pressure sensor may include a first substrate including a first surface and a second surface; at least one or more conductive layers, formed on the first surface of the first substrate; a movable sensitive element, formed by using a first region of the first substrate; a second substrate and a third substrate, the second substrate being coupled to a surface of the conductive layer, the third substrate being coupled to the second surface of the first substrate in which the movable sensitive element of the inertial sensor is formed, and the third substrate and the second substrate are respectively arranged on opposite sides of the movable sensitive element; and a sensitive film of the pressure sensor, including at least a second region of the first substrate, or including at least one of the conductive layers on the second region of the first substrate.
摘要翻译： 集成的惯性传感器和压力传感器可以包括包括第一表面和第二表面的第一基底; 形成在所述第一基板的所述第一表面上的至少一个或多个导电层; 通过使用第一衬底的第一区域形成的可移动敏感元件; 第二基板和第三基板，所述第二基板耦合到所述导电层的表面，所述第三基板耦合到所述第一基板的形成所述惯性传感器的可移动敏感元件的第二表面，并且所述第三基板 基板和第二基板分别布置在可移动敏感元件的相对侧上; 以及压力传感器的敏感膜，包括第一衬底的至少第二区域，或者在第一衬底的第二区域上包括至少一个导电层。
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公开(公告)号：US20160260717A1
公开(公告)日：2016-09-08
申请号：US15157365
申请日：2016-05-17
发明人： ZHENGHAO GAN
IPC分类号： H01L27/102 , H01L23/532 , H01L21/768 , H01L23/522
CPC分类号： H01L27/1021 , G11C11/50 , G11C23/00 , H01L21/76802 , H01L21/76877 , H01L23/5226 , H01L23/528 , H01L23/53261 , H01L27/115 , H01L29/84 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes an insulating layer on a semiconductor substrate, a bit line including TiAl and disposed on the insulating layer, a sidewall layer disposed on opposite sides of the bit line, a word line including TiN and disposed on the sidewall layer intersecting the bit line, and an air gap in an intersection region of the bit line and the word line. The thickness of the sidewall layer is larger than the thickness of the bit line. By having the TiAl bit line and TiN word line, the uniformity of the bit line and word line can be easily controlled to improve the performance of the semiconductor device.
摘要翻译： 半导体器件包括在半导体衬底上的绝缘层，包括TiAl并位于绝缘层上的位线，设置在位线的相对侧上的侧壁层，包括TiN的字线，并且设置在与该位相交的侧壁层上 线和位线和字线的交叉区域中的气隙。 侧壁层的厚度大于位线的厚度。 通过具有TiAl位线和TiN字线，可以容易地控制位线和字线的均匀性，以提高半导体器件的性能。
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公开(公告)号：US09425328B2
公开(公告)日：2016-08-23
申请号：US14023869
申请日：2013-09-11
CPC分类号： B81B7/007 , B81B7/0041 , B81B7/02 , B81B2201/0235 , B81B2201/0242 , B81B2201/0264 , B81B2203/0136 , B81B2203/0315 , B81B2207/096 , G01P15/125 , G01P15/18 , H01L23/481 , H01L28/40 , H01L28/60 , H01L28/82 , H01L29/84 , H01L2924/0002 , H01L2924/00
摘要： An apparatus includes a substrate having at least one via disposed in the substrate, wherein the substrate includes a trench having a substantially trapezoidal cross-section, the trench extending through the substrate between a lower surface of the substrate and an upper surface of the substrate, wherein the top of the trench opens to a top opening, and the bottom of the trench opens to a bottom opening, the top opening being larger than the bottom opening. The apparatus can include a mouth surrounding the top opening and extending between the upper surface and the top opening, wherein a mouth opening in the upper surface is larger than the top opening of the trench, wherein the via includes a dielectric layer disposed on an inside surface of a trench. The apparatus includes and a fill disposed in the trench, with the dielectric layer sandwiched between the fill and the substrate.
摘要翻译： 一种设备包括具有设置在基板中的至少一个通孔的基板，其中基板包括具有大致梯形横截面的沟槽，该沟槽在基板的下表面和基板的上表面之间延伸穿过基板， 其中所述沟槽的顶部通向顶部开口，并且所述沟槽的底部通向底部开口，所述顶部开口大于所述底部开口。 该装置可以包括围绕顶部开口并在上表面和顶部开口之间延伸的口，其中上表面中的开口大于沟槽的顶部开口，其中通孔包括设置在内部的介电层 沟槽表面。 设备包括设置在沟槽中的填充物，介电层夹在填充物和基底之间。
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